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11. 发明申请

US20120037923A1 LIGHT EMITTING DIODE ELEMENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：发光二极管元件及其制造方法
公开(公告)号：US20120037923A1
公开(公告)日：2012-02-16
申请号：US13259705
申请日：2010-03-26
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
IPC分类号： H01L33/02
CPC分类号： H01L33/08 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/343
摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.
摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光被从氮化物半导体层发射的紫外线激发。

12. 发明授权

US07985964B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US07985964B2
公开(公告)日：2011-07-26
申请号：US12313123
申请日：2008-11-17
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/04 , H01L33/32 , H01L33/40
摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
摘要翻译：本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

13. 发明申请

US20090166674A1 Ultraviolet light receiving element 审中-公开
标题翻译：紫外光接收元件
公开(公告)号：US20090166674A1
公开(公告)日：2009-07-02
申请号：US12227529
申请日：2006-05-24
申请人： Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L31/0352
CPC分类号： H01L29/2003 , H01L31/1126
摘要： In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band 61 by means of a depleted layer generated by irradiating a light having energy larger than band gap energy of an undoped layer 44, and electron-hole pairs are generated. A band structure is varied by the generated electron-hole pairs, and thus a portion having an energy lower than that of a quasi-Fermi level 62 of an electron at a boundary between an undoped layer 43 and the undoped layer 44, so that a two-dimensional electron gas 63 is formed. Since the two-dimensional electron gas 63 mentioned above serves as a channel, a large current is flowed by applying a voltage between drain electrode 46-source electrode 7.
摘要翻译：在使用III族氮化物半导体的紫外光接收元件中，提供了具有增强的光接收灵敏度的紫外光接收元件。通过照射具有大于未掺杂层44的带隙能量的能量的光而产生的耗尽层，从价带向导带61激发电子，并产生电子 - 空穴对。通过产生的电子 - 空穴对，并且因此，在未掺杂层43和未掺杂层44之间的边界处，具有能量低于电子的准费米能级62的能量的部分的带结构变化，使得形成二维电子气63。由于上述二维电子束63用作沟道，所以通过在漏电极46源电极7之间施加电压而流过大电流。

14. 发明申请

US20090065763A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 有权
标题翻译：发光半导体器件
公开(公告)号：US20090065763A1
公开(公告)日：2009-03-12
申请号：US12313123
申请日：2008-11-17
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32 , H01L33/40
摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
摘要翻译：本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

15. 发明申请

US20080123713A1 Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element 有权
标题翻译：双光束干涉曝光装置，双光束干涉曝光方法，半导体发光元件制造方法和半导体发光元件
公开(公告)号：US20080123713A1
公开(公告)日：2008-05-29
申请号：US11897895
申请日：2007-08-31
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S3/08 , H01L21/02
CPC分类号： G03F7/70408 , G03F7/70025 , H01L33/22 , H01S3/082 , H01S3/109 , H01S3/2207
摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.
摘要翻译：本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。

16. 发明申请

US20070114560A1 Semiconductor and method of semiconductor fabrication 有权
标题翻译：半导体和半导体制造方法
公开(公告)号：US20070114560A1
公开(公告)日：2007-05-24
申请号：US11603977
申请日：2006-11-21
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/32
摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
摘要翻译：本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

17. 发明授权

US07297989B2 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

18. 发明申请

US20070008539A1 Filter function-equipped optical sensor and flame sensor 有权
标题翻译：配有滤光功能的光学传感器和火焰传感器
公开(公告)号：US20070008539A1
公开(公告)日：2007-01-11
申请号：US10550824
申请日：2004-03-23
申请人： Akira Hirano , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Akira Hirano , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： G01N21/00 , G08B17/12
CPC分类号： G02B5/284
摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).
摘要翻译：为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y），0 <= y <= 1）。

19. 发明申请

US20060145166A1 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 失效
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US20060145166A1
公开(公告)日：2006-07-06
申请号：US11365459
申请日：2006-02-28
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0
摘要翻译：半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层该衬底的主表面由Al y Ga 1-y N（0

20. 发明授权

US07183578B2 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 失效
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US07183578B2
公开(公告)日：2007-02-27
申请号：US11365459
申请日：2006-02-28
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： H01L27/15
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0
摘要翻译：半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层该衬底的主表面由Al y Ga 1-y N（0

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