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11. 发明授权

US08592104B2 Mask for forming patterns of semiconductor device 有权
标题翻译：用于形成半导体器件图案的掩模
公开(公告)号：US08592104B2
公开(公告)日：2013-11-26
申请号：US13224471
申请日：2011-09-02
申请人： Yun-Suk Nam , Si-Young Choi , Yong-Kug Bae
发明人： Yun-Suk Nam , Si-Young Choi , Yong-Kug Bae
IPC分类号： G03F1/70
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/36
摘要： A mask for forming patterns of a semiconductor device is provided. The mask includes first and second main patterns disposed to be spaced apart from each other about a cross point and extending in first and second directions different from each other, a third main pattern disposed spaced apart from the first and second main patterns while being disposed between the first and second main patterns so as to overlap the cross point, and at least one auxiliary pattern spaced apart from the third main pattern in the periphery of a portion of the third main pattern, which is not adjacent with the first and second main patterns.
摘要翻译：提供了用于形成半导体器件的图案的掩模。掩模包括第一和第二主图案，其布置成围绕交叉点彼此间隔开并且在彼此不同的第一和第二方向上延伸;第三主图案，布置在与第一和第二主图案间隔开的同时设置在所述第一和第二主图案与所述交叉点重叠，以及与所述第三主图案的不相邻的所述第三主图案的一部分的周边中的与所述第三主图案间隔开的至少一个辅助图案，。

12. 发明申请

US20120058420A1 Mask for Forming Patterns of Semiconductor Device 有权
标题翻译：半导体器件形成掩模
公开(公告)号：US20120058420A1
公开(公告)日：2012-03-08
申请号：US13224471
申请日：2011-09-02
申请人： Yun-Suk Nam , Si-Young Choi , Yong-Kug Bae
发明人： Yun-Suk Nam , Si-Young Choi , Yong-Kug Bae
IPC分类号： G03F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/36
摘要： A mask for forming patterns of a semiconductor device is provided. The mask includes first and second main patterns disposed to be spaced apart from each other about a cross point and extending in first and second directions different from each other, a third main pattern disposed spaced apart from the first and second main patterns while being disposed between the first and second main patterns so as to overlap the cross point, and at least one auxiliary pattern spaced apart from the third main pattern in the periphery of a portion of the third main pattern, which is not adjacent with the first and second main patterns.
摘要翻译：提供了用于形成半导体器件的图案的掩模。掩模包括第一和第二主图案，其布置成围绕交叉点彼此间隔开并且在彼此不同的第一和第二方向上延伸;第三主图案，布置在与第一和第二主图案间隔开的同时设置在所述第一和第二主图案与所述交叉点重叠，以及与所述第三主图案的不相邻的所述第三主图案的一部分的周边中的与所述第三主图案间隔开的至少一个辅助图案，。

13. 发明授权

US08084801B2 Cell structure for a semiconductor memory device and method of fabricating the same 失效
标题翻译：半导体存储器件的单元结构及其制造方法
公开(公告)号：US08084801B2
公开(公告)日：2011-12-27
申请号：US12654255
申请日：2009-12-15
申请人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
发明人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
IPC分类号： H01L21/336
CPC分类号： H01L27/0207 , H01L27/10888
摘要： In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
摘要翻译：在存储器件的6F2单元结构及其制造方法中，多个有源区可以在两端部具有第一区域，在中心部分可以具有第二区域。位线接触焊盘的一部分可以位于第二区域上，另一部分可以位于基板的不与多个有源区域重叠的第三区域上。位线可以与第三区域的位线接触焊盘连接。尽管6F2结构的单元电池，电池结构也可以更容易地形成。多个有源区域可以具有包括主轴和短轴的椭圆形状。多个有源区域可以被定位在长轴方向上，从而形成有源行，并且可以以这样的结构定位在短轴方向上，使得多个有源区域的中心与相邻的活动区域的中心相邻活动行中的区域。

14. 发明申请

US20070096155A1 Cell structure for a semiconductor memory device and method of fabricating the same 审中-公开
标题翻译：半导体存储器件的单元结构及其制造方法
公开(公告)号：US20070096155A1
公开(公告)日：2007-05-03
申请号：US11581359
申请日：2006-10-17
申请人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
发明人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
IPC分类号： H01L27/10 , H01L29/73
CPC分类号： H01L27/0207 , H01L27/10888
摘要： In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
摘要翻译：在存储器件的6F <2> 单元结构及其制造方法中，多个有源区可以在两端部具有第一区域，在中心部分可以具有第二区域。位线接触焊盘的一部分可以位于第二区域上，另一部分可以位于基板的不与多个有源区域重叠的第三区域上。位线可以与第三区域的位线接触焊盘连接。尽管6F 2结构单位电池，电池结构可能更容易形成。多个有源区域可以具有包括主轴和短轴的椭圆形状。多个有源区域可以被定位在长轴方向上，从而形成有源行，并且可以以这样的结构定位在短轴方向上，使得多个有源区域的中心与相邻的活动区域的中心相邻活动行中的区域。

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