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    • 11. 发明申请
    • Clear field annular type phase shifting mask
    • 透明环形型移相掩模
    • US20050123838A1
    • 2005-06-09
    • US10730533
    • 2003-12-08
    • Chung-Hsing ChangC. H. LinChung-Kuang Chen
    • Chung-Hsing ChangC. H. LinChung-Kuang Chen
    • G03F1/00G03F1/08G03F7/20G03F9/00H01L21/00
    • G03F1/34
    • A mask comprises a mask substrate and at least one annular equal line space phase shifting pattern on said mask substrate to produce an opaque region on a semiconductor substrate. A method of manufacturing a mask comprises providing a mask substrate; forming a layer of resist material on said substrate; patterning at least one annular equal line space phase shifting pattern on said resist layer; patterning said pattern onto said mask substrate; removing a remaining portion of said resist layer. A method of transferring a pattern onto a semiconductor substrate comprises illuminating a mask comprising at least one annular equal line space phase shifting pattern on the mask to produce an opaque region on a semiconductor substrate.
    • 掩模包括掩模基板和在所述掩模基板上的至少一个环形等行空间相移图案,以在半导体基板上产生不透明区域。 一种制造掩模的方法包括提供掩模基板; 在所述基板上形成抗蚀材料层; 在所述抗蚀剂层上形成至少一个环形等行空间相移图案; 将所述图案图案化成所述掩模基板; 去除所述抗蚀剂层的剩余部分。 将图案转移到半导体衬底上的方法包括在掩模上照射包括至少一个环形等行空间相移图案的掩模,以在半导体衬底上产生不透明区域。
    • 12. 发明授权
    • Contact printing as second exposure of double exposure attenuated phase shift mask process
    • 接触印刷作为双曝光衰减相移掩模工艺的第二曝光
    • US06861180B2
    • 2005-03-01
    • US10241675
    • 2002-09-10
    • Chung-Hsing Chang
    • Chung-Hsing Chang
    • G03B27/02G03C5/00G03F1/32G03F7/20G03F9/00
    • G03F1/32
    • Utilizing contact printing as the second exposure within a double exposure attenuated phase shift mask (APSM) fabrication process is disclosed. The process defines the shift pattern within the attenuated layer of the APSM using a first exposure, such as electron beam (e-beam) writing. The attenuated layer may be MoSi, MoSiO, and so on. The process then defines the border pattern within the opaque layer of the APSM using a second exposure. The second exposure employs contact printing, utilizing a contact exposure mask. The contact printing process may align the contact exposure mask over the wafer on which the APSM is fabricated utilizing a camera and an image storage system storing an image of this wafer.
    • 公开了在双曝光衰减相移掩模(APSM)制造工艺中利用接触印刷作为第二曝光。 该过程使用诸如电子束(电子束)写入的第一曝光来限定APSM的衰减层内的移动模式。 衰减层可以是MoSi,MoSiO等。 然后,该过程使用第二次曝光来限定APSM的不透明层内的边界图案。 第二次曝光采用接触印刷,利用接触曝光掩模。 接触印刷过程可以使用相机和存储该晶片的图像的图像存储系统将接触曝光掩模对准在其上制造APSM的晶片上。
    • 18. 发明授权
    • Transistor structure with thermal protection
    • 具有热保护功能的晶体管结构
    • US06836174B1
    • 2004-12-28
    • US10463061
    • 2003-06-17
    • Chung-Hsing Chang
    • Chung-Hsing Chang
    • H01L3500
    • H03K17/0822H03K2017/0806
    • A new transistor structure with thermal protection is provided. A type of the new transistor structure of the present invention includes a main depletion-mode NMOSFET and a control PMOSFET, with the drain terminal of the control PMOSFET connected to the gate terminal of the main NMOSFET and the gate terminal of the control PMOSFET connected to a thermal protection unit. The two-MOSFET structure as a whole emulates a normal NMOSFET. The source terminal of the control PMOSFET that's not connected to the gate terminal of the main NMOSFET acts as the gate terminal of the new transistor structure, and the drain and source terminals of the new transistor structure are the drain and source terminals of the main NMOSFET. The thermal protection unit prevents thermal failures of the MOSFETs of the new transistor structure by sensing heat, terminating current through and switching the two MOSFETs.
    • 提供了一种具有热保护功能的新晶体管结构。 本发明的新型晶体管结构的一种类型包括主耗尽型NMOSFET和控制PMOSFET,其中控制PMOSFET的漏极端子连接到主NMOSFET的栅极端子,并且控制PMOSFET的栅极端子连接到 一个热保护单元。 两个MOSFET结构作为一个整体来模拟正常的NMOSFET。 未连接到主NMOSFET的栅极端子的控制PMOSFET的源极端子用作新晶体管结构的栅极端子,并且新晶体管结构的漏极和源极端子是主要NMOSFET的漏极和源极端子 。 热保护单元通过感测热量,终止电流并切换两个MOSFET来防止新晶体管结构的MOSFET的热故障。