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11. 发明授权

US07287574B2 Attachment and articles using same 有权
标题翻译：附件和文章使用相同
公开(公告)号：US07287574B2
公开(公告)日：2007-10-30
申请号：US10502813
申请日：2003-02-10
申请人： Sameer Desai , Daniel R. Domen , Norman Woodworth
发明人： Sameer Desai , Daniel R. Domen , Norman Woodworth
IPC分类号： F28F9/00
CPC分类号： F28D1/0435 , F28F9/002 , F28F2275/085 , Y10S165/916
摘要： There is disclosed an attachment (12) suitable for attaching a first component of an article to a second component of the article. The attachment preferably includes a flange portion (20) extending from the first component and one, but preferably, a pair of flange members (22) extending from the second component. The flange portion (12) and the flange members (22) typically interferingly engage one another for attaching the first component to the second component. It has been found that the attachment provided in the present invention is particularly effective for attaching a heat exchanger (14) to another component such as a shroud or another heat exchanger (16) together for forming a heat exchanger assembly (10).
摘要翻译：公开了适于将制品的第一部件附着到制品的第二部件的附件（12）。附件优选地包括从第一部件延伸的凸缘部分（20），并且优选地包括从第二部件延伸的一对凸缘部件（22）。凸缘部分（12）和凸缘构件（22）通常彼此干涉地接合以将第一部件附接到第二部件。已经发现，在本发明中提供的附件对于将热交换器（14）附接到另一个部件（例如护罩或另一个热交换器（16））在一起以形成热交换器组件（10）是特别有效的。

12. 发明申请

US20070137845A1 Coating for components having dampening or sealing functions 审中-公开
标题翻译：具有阻尼或密封功能的部件涂层
公开(公告)号：US20070137845A1
公开(公告)日：2007-06-21
申请号：US11304360
申请日：2005-12-15
申请人： Sameer Desai
发明人： Sameer Desai
IPC分类号： F28F9/02
CPC分类号： F28F19/04 , F28F9/002 , F28F9/0226 , F28F9/0246 , F28F21/067 , F28F2230/00 , F28F2265/30
摘要： The present invention relates to components which provide an isolation or sealing function at joints or interfaces, said component being comprised of a semi-rigid or flexible material, wherein the flexible material is provided with a surface coating in at least one area. In various aspects of the present invention, particularly useful in automotive applications, isolators, gaskets, O-rings and the like, are provided with coatings that can withstand various environmental conditions, and, particularly, components used in high temperature applications, especially high temperature applications such as those found in automotive applications.
摘要翻译：本发明涉及在接头或接口处提供隔离或密封功能的部件，所述部件由半刚性或柔性材料组成，其中柔性材料在至少一个区域中设置有表面涂层。在本发明的各个方面，在汽车应用，隔离器，垫圈，O形环等中特别有用的，具有能够承受各种环境条件的涂层，特别是用于高温应用的部件，特别是高温诸如在汽车应用中发现的应用。

13. 发明授权

US06803325B2 Apparatus for improving barrier layer adhesion to HDP-FSG thin films 失效
标题翻译：用于改善与HDP-FSG薄膜的屏障层粘附性的装置
公开(公告)号：US06803325B2
公开(公告)日：2004-10-12
申请号：US10120713
申请日：2002-04-10
申请人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
发明人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

14. 发明申请

US20090166022A1 VEHICLE HEAT EXCHANGER AND METHOD FOR SELECTIVELY CONTROLLING ELEMENTS THEREOF 审中-公开
标题翻译：车辆热交换器及其选择性控制方法
公开(公告)号：US20090166022A1
公开(公告)日：2009-07-02
申请号：US11967242
申请日：2007-12-30
申请人： Sameer Desai , Sridhar Maddipatla , Philip J. Davis
发明人： Sameer Desai , Sridhar Maddipatla , Philip J. Davis
IPC分类号： G05D23/00 , F28D1/00
CPC分类号： F28D1/0443 , F28D1/0417 , F28D1/05366 , F28F27/02
摘要： A vehicle heat exchanger includes a first end tank, a second end tank opposite the first end tank, and a main core between and connecting the first and second end tanks. The main core includes a heat exchanger element including a plurality of tubes in fluid communication with the first and second end tanks. At least two control elements are operatively positioned in one or more housings that are operatively connected to the vehicle heat exchanger.
摘要翻译：车辆热交换器包括第一端部箱，与第一端部箱相对的第二端部箱，以及连接第一和第二端部箱之间的主芯。主芯包括热交换器元件，其包括与第一和第二端口箱流体连通的多个管。至少两个控制元件可操作地定位在可操作地连接到车辆热交换器的一个或多个壳体中。

15. 发明授权

US07527087B2 Heat exchanger 有权
标题翻译：热交换器
公开(公告)号：US07527087B2
公开(公告)日：2009-05-05
申请号：US10608422
申请日：2003-06-30
申请人： Sameer Desai , Lei Fang , Jason McKittrick
发明人： Sameer Desai , Lei Fang , Jason McKittrick
IPC分类号： F28D7/10
CPC分类号： F28D1/05375 , F28D1/0443 , F28F9/0202 , F28F2009/0287
摘要： An improved heat exchanger for an automotive vehicle, comprising at least one end tank; and at least two heat exchangers including a plurality of spaced apart metal tubes with fins between the spaced tubes. The heat exchangers are preferentially disposed so that their respective tubes and fins are generally co-planar with each other and are connected to the end tank. In preferred embodiments, the heat exchanger may include a radiator element.
摘要翻译：一种用于机动车辆的改进的热交换器，包括至少一个端部罐; 以及至少两个热交换器，其包括多个间隔开的金属管，在间隔开的管之间具有翅片。热交换器优选地设置成使得它们各自的管和翅片彼此大致共面并且连接到端部罐。在优选实施例中，热交换器可以包括散热器元件。

16. 发明申请

US20060081356A1 Attachment and articles using same 审中-公开
标题翻译：附件和文章使用相同
公开(公告)号：US20060081356A1
公开(公告)日：2006-04-20
申请号：US11283361
申请日：2005-11-18
申请人： Sameer Desai , Norman Woodworth
发明人： Sameer Desai , Norman Woodworth
IPC分类号： F28F7/00
CPC分类号： F28D1/0408 , F28F9/002 , Y10T403/1616
摘要： There is disclosed an attachment suitable for attaching a first component of an article to a second component of the article. The attachment preferably includes a flange portion extending from the first component and a slot or slot tab or stop wall or locator post extending from the second component. The assembled components form an assembly which reduces or restricts vibration or movement of the components in specific directions
摘要翻译：公开了一种适于将制品的第一部件附着到制品的第二部件的附件。附件优选地包括从第一部件延伸的凸缘部分和从第二部件延伸的槽或狭槽突出部或止动壁或定位器柱。组装的部件形成了组件，其减小或限制部件在特定方向上的振动或移动

17. 发明申请

US20050008428A1 Attachment and articles using same 审中-公开
标题翻译：附件和文章使用相同
公开(公告)号：US20050008428A1
公开(公告)日：2005-01-13
申请号：US10642962
申请日：2003-08-14
申请人： Sameer Desai , Norman Woodworth
发明人： Sameer Desai , Norman Woodworth
IPC分类号： F28D1/04 , F28F9/00 , F16B1/00
CPC分类号： F28D1/0408 , F28F9/002 , Y10T403/1616
摘要： There is disclosed an attachment suitable for attaching a first component of an article to a second component of the article. The attachment preferably includes a flange portion extending from the first component and a slot or slot tab or stop wall or locator post extending from the second component. The assembled components form an assembly which reduces or restricts vibration or movement of the components in specific directions
摘要翻译：公开了一种适于将制品的第一部件附着到制品的第二部件的附件。附件优选地包括从第一部件延伸的凸缘部分和从第二部件延伸的槽或狭槽突出部或止动壁或定位器柱。组装的部件形成了组件，其减小或限制部件在特定方向上的振动或移动

18. 发明授权

US06579811B2 Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps through wafer heating 失效
标题翻译：用于通过晶片加热修改窄的，高纵横比间隙的轮廓的方法和装置
公开(公告)号：US06579811B2
公开(公告)日：2003-06-17
申请号：US09745918
申请日：2000-12-20
申请人： Pravin Narwankar , Sameer Desai , Walter Zygmunt , Turgut Sahin , Laxman Murugesh
发明人： Pravin Narwankar , Sameer Desai , Walter Zygmunt , Turgut Sahin , Laxman Murugesh
IPC分类号： H01L2131
CPC分类号： C23C16/4411 , C23C16/045 , C23C16/4405 , C23C16/4412 , C23C16/46 , C23C16/507 , C23C16/52 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31608 , H01L21/31612 , H01L21/76224
摘要： A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.
摘要翻译：用于改变半导体衬底上窄，高纵横比间隙的轮廓的方法和装置用于以无空隙的方式填充间隙。高密度等离子体化学气相沉积（HDP-CVD）系统中的衬底的差分加热特性有助于防止间隙在填充之前被夹住。形成等离子体的线圈之间的功率分布改变了等离子体的溅射蚀刻部件的角度依赖性，并且因此可以独立地或与差分加热一起用于修改间隙分布。在同时的沉积/蚀刻过程期间，可以将热源施加到衬底的背面，以进一步增强差分加热的轮廓修改特性。

19. 发明授权

US06410457B1 Method for improving barrier layer adhesion to HDP-FSG thin films 有权
标题翻译：改善与HDP-FSG薄膜的隔离层粘附性的方法
公开(公告)号：US06410457B1
公开(公告)日：2002-06-25
申请号：US09569744
申请日：2000-05-11
申请人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
发明人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

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