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11. 发明申请

WO2011150397A3 LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION 审中-公开
标题翻译：激光加工用于高效晶体硅太阳能电池制造
公开(公告)号：WO2011150397A3
公开(公告)日：2012-04-05
申请号：PCT/US2011038444
申请日：2011-05-27
申请人： SOLEXEL INC , RANA VIRENDRA V , LIANG JIAN JUN , ANBALAGAN PRANAV , MOSLEHI MEHRDAD M
发明人： RANA VIRENDRA V , LIANG JIAN JUN , ANBALAGAN PRANAV , MOSLEHI MEHRDAD M
IPC分类号： H01L31/18 , H01L31/042
CPC分类号： H01L31/0682 , B23K26/0624 , B23K26/08 , B23K26/389 , B23K26/40 , B23K2201/36 , B23K2203/172 , B23K2203/40 , B23K2203/50 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。这些技术非常适合于薄晶体半导体，包括薄晶体硅薄膜。

12. 发明申请

WO2012092537A3 LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS 审中-公开
标题翻译：光伏太阳能电池的激光加工方法
公开(公告)号：WO2012092537A3
公开(公告)日：2012-11-22
申请号：PCT/US2011068037
申请日：2011-12-30
申请人： SOLEXEL INC , MOSLEHI MEHRDAD M , RANA VIRENDRA V , ANBALAGAN PRANAV , SARASWAT VIVEK
发明人： MOSLEHI MEHRDAD M , RANA VIRENDRA V , ANBALAGAN PRANAV , SARASWAT VIVEK
IPC分类号： H01L31/042 , B23K26/36 , H01L31/18
CPC分类号： H01L31/02363 , B23K26/0624 , B23K26/40 , B23K2203/50 , H01L21/268 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。公开了激光烧蚀技术，使基底硅基本上没有损坏。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是平面或纹理/三维。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

13. 发明专利

AU2013267481A1 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells 未知
公开(公告)号：AU2013267481A1
公开(公告)日：2015-01-22
申请号：AU2013267481
申请日：2013-05-29
申请人： COUTANT SOLENE , SEUTTER SEAN , KOMMERA SWAROOP , ANBALAGAN PRANAV , SOLEXEL INC , KAPUR PAWAN , RATTLE BENJAMINE , DESHAZER HEATHER , DESHPANDE ANAND , MOSLEHI MEHRDAD , RANA VIRENDRA
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/04 , H01L31/18
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

14. 发明申请

WO2008076730B1 DIRECTIONAL CRYSTALLIZATION OF SILICON SHEETS USING RAPID THERMAL PROCESSING 审中-公开
标题翻译：硅片快速热处理定向结晶
公开(公告)号：WO2008076730B1
公开(公告)日：2008-08-14
申请号：PCT/US2007087150
申请日：2007-12-12
申请人： APPLIED MATERIALS INC , RANA VIRENDRA V , BACHRACH ROBERT Z
发明人： RANA VIRENDRA V , BACHRACH ROBERT Z
IPC分类号： C30B1/00 , C30B15/04
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.
摘要翻译：本发明提供了一种使硅片再结晶的方法，特别是使小颗粒硅片再结晶以改善诸如晶粒尺寸和取向的材料特性。根据一个方面，该方法包括使用快速热处理（RTP）以一个加热顺序熔化并重结晶一个或多个整个硅片。根据另一方面，该方法包括定向控制片材厚度上的温度下降，以促进在熔化材料中产生少量核并且它们生长成大颗粒。根据另一方面，本发明在整个工艺流程中包括重新结晶室，该重新结晶室能够对具有用于诸如光伏模块的应用的期望性质的硅片进行高通量处理。

15. 发明专利

MY173413A HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 未知
公开(公告)号：MY173413A
公开(公告)日：2020-01-23
申请号：MYPI2014700259
申请日：2012-08-09
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K -JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described. The Most Illustrative Drawing: Figure 4

16. 发明专利

MY166305A High-efficiency Photovoltaic Back-contact Solar Cell Structures and Manufacturing Methods Using Thin Planar Semiconductor Absorbers 未知
公开(公告)号：MY166305A
公开(公告)日：2018-06-25
申请号：MYPI2012700546
申请日：2010-12-09
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
IPC分类号： H01L31/0224 , H01L31/18
摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell. Figure 13

17. 发明专利

AU2016200610A1 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells 未知
公开(公告)号：AU2016200610A1
公开(公告)日：2016-02-25
申请号：AU2016200610
申请日：2016-02-01
申请人： SOLEXEL INC
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/04 , H01L31/18
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

18. 发明专利

AU2013289151A1 High efficiency solar cell structures and manufacturing methods 未知
公开(公告)号：AU2013289151A1
公开(公告)日：2014-11-13
申请号：AU2013289151
申请日：2013-04-02
申请人： SOLEXEL INC
发明人： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , KAPUR PAWAN , RANA VIRENDRA V , DUTTON DAVID , SEUTTER SEAN M , CALCATERRA ANTHONY , ASHJAEE JAY , YONEHARA TAKAO
IPC分类号： H01L31/04 , H01L31/18
摘要： According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.

19. 发明专利

MY173459A LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS 未知
公开(公告)号：MY173459A
公开(公告)日：2020-01-26
申请号：MYPI2013701141
申请日：2011-12-30
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , RANA VIRENDRA V , ANBALAGAN PRANAV , SARASWAT VIVEK
IPC分类号： B23K26/36 , H01L31/0216 , H01L31/04 , H01L31/18
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

20. 发明专利

AU2012362505B2 Systems and methods for enhanced light trapping in solar cells 未知
公开(公告)号：AU2012362505B2
公开(公告)日：2015-08-20
申请号：AU2012362505
申请日：2012-12-26
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , RANA VIRENDRA V , COUTANT SOLENE , DESHAZER HEATHER , ANBALAGAN PRANAV , RATTLE BENJAMIN
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
摘要： Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.

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