专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06316873B1 Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US06316873B1
公开(公告)日：2001-11-13
申请号：US09131339
申请日：1998-08-07
申请人： Hiroshi Ito , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Hiroshi Ito , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供给层具有硅化物层。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

12. 发明授权

US06278230B1 Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US06278230B1
公开(公告)日：2001-08-21
申请号：US09131225
申请日：1998-08-07
申请人： Atsushi Yoshizawa , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Hiroshi Ito , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Atsushi Yoshizawa , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Hiroshi Ito , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J1924
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供给层的膜厚为2.5μm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

13. 发明授权

US06184612B2 Electron emission device with electron supply layer of hydrogenated amorphous silicon 有权
标题翻译：具有氢化非晶硅电子供应层的电子发射装置
公开(公告)号：US06184612B2
公开(公告)日：2001-02-06
申请号：US09131340
申请日：1998-08-07
申请人： Nobuyasu Negishi , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Shingo Iwasaki , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Nobuyasu Negishi , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Shingo Iwasaki , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J102
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供应层由氢化非晶硅制成。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

14. 发明授权

US6066922A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US6066922A
公开(公告)日：2000-05-23
申请号：US131222
申请日：1998-08-07
申请人： Shingo Iwasaki , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Shingo Iwasaki , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J1/312 , H01J29/04 , H01J31/12 , G09G3/10
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上，场稳定层。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

15. 发明授权

US07902760B2 Electron emission device, and driving method thereof 有权
标题翻译：电子发射装置及其驱动方法
公开(公告)号：US07902760B2
公开(公告)日：2011-03-08
申请号：US11631487
申请日：2005-06-24
申请人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： G09G3/10 , H01J1/62
CPC分类号： H01J1/312 , B82Y10/00 , G09G3/22 , G09G2320/043 , H01J29/96 , H01J31/127 , H01J2201/3125 , H01J2329/0484 , H01J2329/96
摘要： Provided is a method of driving an electron emission apparatus that drives the apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer. The plurality of electron emission devices are sealed and the method includes: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage.
摘要翻译：提供一种驱动电子发射装置的方法，该电子发射装置包括多个电子发射装置，每个电子发射装置具有由硅形成的电子供体层，硅基混合物或其化合物，形成在电子供给层上的绝缘体层以及形成在绝缘体层上的薄膜金属电极。多个电子发射器件被密封，并且该方法包括：驱动步骤，用于在电子供给层和薄膜金属电极之间提供电力，以使电子从电子发射器件发射;以及再生步骤，在等于或高于施加的电压值的水平，其引起在施加的电压下在电子供给层和薄膜金属电极之间流动的器件电流的差分值的不连续性。

16. 发明授权

US06259198B1 Flat panel display apparatus with an array of electron emitting devices 失效
标题翻译：具有电子发射器件阵列的平板显示装置
公开(公告)号：US06259198B1
公开(公告)日：2001-07-10
申请号：US09219779
申请日：1998-12-23
申请人： Shuuchi Yanagisawa , Takamasa Yoshikawa , Kazuto Sakemura , Atsushi Yoshizawa , Takashi Chuman , Nobuyasu Negishi , Takashi Yamada , Shingo Iwasaki , Hiroshi Ito , Kiyohide Ogasawara
发明人： Shuuchi Yanagisawa , Takamasa Yoshikawa , Kazuto Sakemura , Atsushi Yoshizawa , Takashi Chuman , Nobuyasu Negishi , Takashi Yamada , Shingo Iwasaki , Hiroshi Ito , Kiyohide Ogasawara
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312 , H01J31/127
摘要： An electron emission device based flat panel display apparatus is composed of a pair of a back substrate and an optically transparent front substrate opposing to each other with a vacuum space interposed therebetween, and a plurality of electron emission devices, each of which includes an electron-supply layer made of metal or semiconductor, formed on ohmic electrodes formed on a surface of the back substrate proximate to the vacuum space, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer and facing the vacuum space. The front substrate includes collector electrodes formed on its surface proximate to the vacuum space, fluorescent material layers formed on the collector electrodes, and an image display array composed of a plurality of light emitting elements corresponding to the fluorescent material layers. The electron emission device based flat panel display apparatus also comprises an insulative support member formed on the back substrate and disposed between adjacent ones of the electron emission devices, and a plurality of electrodes, each of which is disposed between adjacent ones of the thin-film metal electrodes and on the insulative support member for electrically connecting the thin-film metal electrodes.
摘要翻译：一种基于电子发射装置的平板显示装置由一对背面基板和光学透明的前基板组成，彼此相对地设有真空空间，以及多个电子发射装置，由形成在靠近真空空间的背面基板的表面上的欧姆电极上形成的由金属或半导体制成的供电层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极，以及面对真空空间。前基板包括在其靠近真空空间的表面上形成的集电极，形成在集电极上的荧光材料层，以及由与荧光材料层对应的多个发光元件组成的图像显示阵列。基于电子发射装置的平板显示装置还包括形成在背面基板上并设置在相邻的电子发射装置之间的绝缘支撑构件，以及多个电极，每个电极设置在相邻的薄膜金属电极和用于电连接薄膜金属电极的绝缘支撑构件上。

17. 发明申请

US20070241655A1 Electron Emitting Device and Manufacturing Method Thereof and Image Pick Up Device or Display Device Using Electron Emitting Device 审中-公开
标题翻译：电子发射装置及其制造方法和使用电子发射装置的图像拾取装置或显示装置
公开(公告)号：US20070241655A1
公开(公告)日：2007-10-18
申请号：US10594904
申请日：2005-03-22
申请人： Kazuto Sakemura , Saburo Aso , Koji Hanihara , Nobuyasu Negishi , Tomonari Nakada , Takamasa Yoshikawa
发明人： Kazuto Sakemura , Saburo Aso , Koji Hanihara , Nobuyasu Negishi , Tomonari Nakada , Takamasa Yoshikawa
IPC分类号： H01J1/02 , H01J9/00
CPC分类号： H01J9/022 , B82Y10/00 , H01J1/312 , H01J31/127
摘要： An electron emitting device having a lower electrode on a side near to a substrate and an upper electrode on a side remote from the substrate respectively, formed of a plurality of electron emitting elements remitting electrons from a side of the upper electrode side, wherein space is formed between the electron emitting elements, and the upper electrode extends across the plurality of electron emitting elements and the space by a bridging portion of the upper electrode.
摘要翻译：一种电子发射器件，其在靠近衬底的一侧具有一个下部电极，而在远离该衬底的一侧分别具有一个上部电极，该多个电子发射元件从上部电极侧的一侧排出电子，其中的空间是形成在电子发射元件之间，并且上电极通过上电极的桥接部分跨越多个电子发射元件和空间延伸。

18. 发明授权

US07348531B2 Photoelectric conversion device and image pickup device using electron emission devices 有权
标题翻译：使用电子发射装置的光电转换装置和图像拾取装置
公开(公告)号：US07348531B2
公开(公告)日：2008-03-25
申请号：US11053202
申请日：2005-02-09
申请人： Yoshiyuki Okuda , Saburo Aso , Katsumi Yoshizawa , Takamasa Yoshikawa , Hideo Satoh , Nobuyasu Negishi , Kazuto Sakemura
发明人： Yoshiyuki Okuda , Saburo Aso , Katsumi Yoshizawa , Takamasa Yoshikawa , Hideo Satoh , Nobuyasu Negishi , Kazuto Sakemura
IPC分类号： H01L27/00 , H01L31/00 , H01L29/06 , G09G3/20 , H01J9/02
CPC分类号： H01J31/26
摘要： Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.
摘要翻译：公开了一种能够大大减少提供给场致发射装置的驱动信号的延迟以及起源于这些驱动信号的串扰等的图像拾取装置。图像拾取装置包括用于在其一侧接收入射光的光电转换膜; 具有与光电转换膜的另一侧分离且面向电子发射面的场致发射层，并且包括多个电子发射装置; 以及驱动层，其形成在所述场致发射层的背面，并且包括用于向所述多个电子发射装置的每个背电极提供驱动信号的多个装置驱动电路。

19. 发明申请

US20050184220A1 Photoelectric conversion device and image pickup device using electron emission devices 有权
标题翻译：使用电子发射装置的光电转换装置和图像拾取装置
公开(公告)号：US20050184220A1
公开(公告)日：2005-08-25
申请号：US11053202
申请日：2005-02-09
申请人： Yoshiyuki Okuda , Saburo Aso , Katsumi Yoshizawa , Takamasa Yoshikawa , Hideo Satoh , Nobuyasu Negishi , Kazuto Sakemura
发明人： Yoshiyuki Okuda , Saburo Aso , Katsumi Yoshizawa , Takamasa Yoshikawa , Hideo Satoh , Nobuyasu Negishi , Kazuto Sakemura
IPC分类号： H01L27/146 , H01J29/04 , H01J29/96 , H01J31/26 , H01J31/38 , H01L27/00 , H01L31/00
CPC分类号： H01J31/26
摘要： Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.
摘要翻译：公开了一种能够大大减少提供给场致发射装置的驱动信号的延迟以及起源于这些驱动信号的串扰等的图像拾取装置。图像拾取装置包括用于在其一侧接收入射光的光电转换膜; 具有与光电转换膜的另一侧分离且面向电子发射面的场致发射层，并且包括多个电子发射装置; 以及驱动层，其形成在所述场致发射层的背面，并且包括用于向所述多个电子发射装置的每个背电极提供驱动信号的多个装置驱动电路。

20. 发明授权

US06285123B1 Electron emission device with specific island-like regions 有权
标题翻译：具有特定岛状区域的电子发射装置
公开(公告)号：US06285123B1
公开(公告)日：2001-09-04
申请号：US09393806
申请日：1999-09-10
申请人： Takashi Yamada , Atsushi Yoshizawa , Takuya Hata , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Hideo Satoh , Hiroshi Ito , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Takashi Yamada , Atsushi Yoshizawa , Takuya Hata , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman , Hideo Satoh , Hiroshi Ito , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127
摘要： An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.
摘要翻译：电子发射装置包括由金属或半导体形成的电子供应层; 形成在电子供给层上的绝缘体层; 以及形成在绝缘体层上的薄膜金属电极，当在电子供给层和薄膜金属电极之间施加电场时，发射电子。绝缘体层和薄膜金属电极具有至少一个岛状区域，其中绝缘体层和薄膜金属电极的厚度逐渐降低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式