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    • 11. 发明授权
    • Semiconductor memory device and manufacturing method thereof
    • 半导体存储器件及其制造方法
    • US07256085B2
    • 2007-08-14
    • US11077233
    • 2005-03-11
    • Kazuhiro HataShinichi SatoYukiharu Akiyama
    • Kazuhiro HataShinichi SatoYukiharu Akiyama
    • H01L21/8238
    • H01L29/0847H01L21/26586H01L27/11568H01L29/66825
    • A manufacturing method of a semiconductor memory device comprising the steps of: forming plural trenches in stripes in a semiconductor substrate and filling each of the trenches with an element isolation insulating film to form element isolation regions; sequentially forming a tunnel insulating film and a charge-storable film so as to cover active regions between the element isolation regions; forming an interlayer insulating film on the charge-storable film; forming plural control gates on the interlayer insulating film in a direction orthogonal to a longitudinal direction of the trenches; among source formation regions and drain formation regions alternately provided between the plural control gates, etching the element isolation insulating film in the source formation regions, using as a mask a resist film having openings in the source formation regions, to expose surfaces of the trenches; and carrying out isotropic plasma ion implantation on the source formation regions to form source diffusion layers in the surfaces of the trenches and in the active regions.
    • 一种半导体存储器件的制造方法,包括以下步骤:在半导体衬底中形成条纹中的多个沟槽,并用元件隔离绝缘膜填充每个沟槽以形成元件隔离区域; 依次形成隧道绝缘膜和电荷存储膜,以覆盖元件隔离区之间的有源区; 在电荷存储膜上形成层间绝缘膜; 在与所述沟槽的纵向正交的方向上在所述层间绝缘膜上形成多个控制栅极; 在多个控制栅极之间交替设置的源极形成区域和漏极形成区域之间,在源极形成区域中蚀刻元件隔离绝缘膜,使用在源极形成区域中具有开口的抗蚀剂膜作为掩模来暴露沟槽的表面; 并在源极形成区域上进行各向同性等离子体离子注入,以在沟槽表面和活性区域中形成源极扩散层。
    • 20. 发明申请
    • Pressure sensor apparatus
    • 压力传感器装置
    • US20050268723A1
    • 2005-12-08
    • US10918404
    • 2004-08-16
    • Yukiharu AkiyamaHisato Umemaru
    • Yukiharu AkiyamaHisato Umemaru
    • G01L19/06F02P5/00G01L9/00G01L19/00
    • G01L19/0627F02D2200/0406G01L19/0038G01L19/0636
    • A pressure sensor apparatus having capability of preventing invasion of foreign materials into a pressure sensor with a simplified structure includes the pressure sensor (1) for detecting pressure of a fluid for measurement, and a sensor container (2) for housing therein the pressure sensor (1). The sensor container (2) is connected to a pressure intake port (13) formed in a pipe (12) through which the fluid for measurement flows. The sensor container (2) includes a wall (17) for defining a second compartment (16) located in opposition to the pressure intake port (13) and a first compartment (15) having a pressure introducing port (14) for introducing the fluid for measurement extracted through the pressure intake port (13) to the pressure sensor (1).
    • 具有能够以简化的结构防止异物侵入压力传感器的能力的压力传感器装置包括用于检测用于测量的流体的压力的压力传感器(1)和用于容纳压力传感器的传感器容器(2) 1)。 传感器容器(2)连接到形成在管(12)中的压力进入口(13),流体用于测量流体。 传感器容器(2)包括用于限定与压力进气口(13)相对的第二隔室(16)的壁(17)和具有用于引入流体的压力引入口(14)的第一隔室(15) 用于通过压力进入口(13)提取到压力传感器(1)的测量。