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11. 发明授权

US08817531B2 Magnetic random access memory device and method for producing a magnetic random access memory device 有权
标题翻译：磁性随机存取存储器件及其制造方法
公开(公告)号：US08817531B2
公开(公告)日：2014-08-26
申请号：US13702165
申请日：2011-06-08
申请人： Rolf Allenspach , Carl Zinoni
发明人： Rolf Allenspach , Carl Zinoni
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： G11C11/15 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/22 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.
摘要翻译：磁性随机存取存储器（MRAM）装置具有经读取字线，写入字线和位线互连的读字线，写字线，位线和多个存储器位元组。每个存储器单元具有固定的铁磁层元件和由电介质隧道势垒元件隔开的自由铁磁层元件。每个写入字线和相应数量的自由铁磁层元件形成为单个连续铁磁线。

12. 发明授权

US07242604B2 Switchable element 有权
标题翻译：可切换元件
公开(公告)号：US07242604B2
公开(公告)日：2007-07-10
申请号：US11329465
申请日：2006-01-11
申请人： Mathias Klaeui , Rolf Allenspach , Pierre-Olivier Jubert
发明人： Mathias Klaeui , Rolf Allenspach , Pierre-Olivier Jubert
IPC分类号： C11C7/00
CPC分类号： G11C11/15
摘要： A memory element, logic element or sensor element is provided, which element comprises a switchable first magnetic component exhibiting a ferromagnetic or ferrimagnetic behaviour and comprising at least two magnetic domains with different magnetization directions and a domain wall between the magnetic domains. The element has electrodes operable to induce an electric current which at least partially flows through the domain wall with a current density high enough to cause the domain wall to reversibly propagate within the magnetic component. The first magnetic component may belong to a layered system further including a second magnetic component with a fixed magnetization and a non-magnetic spacer layer arranged between the first and second magnetic component. In such a layered system, the electrical resistance may depend on the relative orientation of the magnetization directions of the first and second magnetic component, due to the GMR or TMR effect.
摘要翻译：提供存储元件，逻辑元件或传感器元件，该元件包括呈现铁磁性或亚铁磁性能的可切换第一磁性部件，并且包括具有不同磁化方向的至少两个磁畴和磁畴之间的畴壁。元件具有可操作的电极，其电流至少部分地流过畴壁，电流密度足够高以使畴壁在磁性部件内可逆地传播。第一磁性部件可以属于还包括具有固定磁化的第二磁性部件和布置在第一和第二磁性部件之间的非磁性间隔层的分层系统。在这种分层系统中，由于GMR或TMR效应，电阻可能取决于第一和第二磁性部件的磁化方向的相对取向。

13. 发明申请

US20050260839A1 Non-volatile resistance switching memory 有权
标题翻译：非易失性电阻切换存储器
公开(公告)号：US20050260839A1
公开(公告)日：2005-11-24
申请号：US11105849
申请日：2005-04-14
申请人： Rolf Allenspach , Johannes Bednorz , Gerhard Meijer , Chung Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes Bednorz , Gerhard Meijer , Chung Lam , Richard Stutz , Daniel Widmer
IPC分类号： C23C16/40 , G11C11/56 , H01L21/02 , H01L21/20 , H01L21/316 , H01L21/8238 , H01L21/8246 , H01L27/10 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：用于沉积切换材料的过程，装置和系统，其可在导电状态之间切换，并且状态持续存在。本发明还涉及包括用于存储数字信息的切换材料的微电子装置或非易失性电阻切换存储器。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

14. 发明授权

US06680808B2 Magnetic millipede for ultra high density magnetic storage 失效
标题翻译：磁性千斤顶用于超高密度磁存储
公开(公告)号：US06680808B2
公开(公告)日：2004-01-20
申请号：US09798237
申请日：2001-03-01
申请人： Rolf Allenspach , Gerd K. Binnig , Walter Haeberle , Peter Vettiger
发明人： Rolf Allenspach , Gerd K. Binnig , Walter Haeberle , Peter Vettiger
IPC分类号： G11B502
CPC分类号： G11B5/00 , B82Y10/00 , G11B5/012 , G11B5/255 , G11B5/488 , G11B5/4886 , G11B5/74 , G11B5/82 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B13/045 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021
摘要： The present invention relates to computer storage systems which have a tip (24) directed close or in contact to the storage medium (10) by which bit-writing and bit-reading is enforced. It is proposed to use a magnetizable storage medium (10), expose it to an artificial, external magnetic field H coupled externally to the storage medium, and—during bit writing—to concurrently apply heat very locally in bit size dimension in order to let the external magnetic field become locally larger than the (temperature-dependent) coercive field at the location (32) where heat is applied. Further, a two-dimensional array of cantilever tips (24) is advantageously used in an inventional storage system each of which tips serves as a heat source when it is activated by a current flowing through a resistive path within said tip (24) and producing the necessary temperature at the small storage medium location (32) where the bit writing is intended in order to approach the Curie temperature or the compensation temperature of the magnetic material.
摘要翻译：本发明涉及具有尖端（24）的计算机存储系统，所述尖端（24）紧密地或与存储介质（10）接触，由此执行位写入和位读取。建议使用可磁化存储介质（10），将其暴露于外部耦合到存储介质的人造外部磁场H，并且在位写入期间同时以比特尺寸尺寸局部施加热量，以使外部磁场局部地大于施加热量的位置（32）处的（温度依赖）矫顽场。此外，悬臂尖端（24）的二维阵列有利地用于本发明的存储系统中，每个尖端在由流过所述尖端（24）内的电阻路径的电流激活时用作热源，并产生在小存储介质位置（32）处必需的温度，其中位写入旨在接近居里温度或磁性材料的补偿温度。

15. 发明授权

US06631057B1 Magnetic device with ferromagnetic layer contacting specified yttrium or rare earth element oxide antiferromagnetic layer 失效
标题翻译：具有铁磁层的磁性器件与规定的钇或稀土元素氧化物反铁磁层接触
公开(公告)号：US06631057B1
公开(公告)日：2003-10-07
申请号：US09521155
申请日：2000-03-08
申请人： Rolf Allenspach , Jean Fompeyrine , Eric Fullerton , Jean Pierre Locquet , Timothy Moran , Maria Seo
发明人： Rolf Allenspach , Jean Fompeyrine , Eric Fullerton , Jean Pierre Locquet , Timothy Moran , Maria Seo
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/66 , G11B5/74 , G11B2005/3996 , H01F10/3218 , H01F10/3268
摘要： The present invention concerns at least an antiferromagnetic layer, which is in direct contact with a ferromagnetic layer for inducing an exchange bias in the ferromagnetic layer. Thus, the ferromagnetic layer is pinned by the antiferromagnetic layer, also referred to as the pinning layer. The antiferromagnetic or pinning layer comprises a compound from the group of orthoferrites, which show a variety of advantages. For example, these antiferromagnets can have a Néel temperature TN ranging from at least 623 K to 740 K depending on the compounds, and they can display a weak ferromagnetic moment. Therefore, a magnetic device comprising the mentioned structure can be used properly in an environment of a high operating temperature. The compound can be described by the formula RFe1−xTMxO3with R a rare earth element or Yttrium, and TM a transition metal which can be one element of the groups IB to VIII. The compound can be also doped by an element S being an element with another valence, such as Barium, Nickel, Strontium, Calcium, Potassium, or Sodium in compound R1−xSxFeO3.
摘要翻译：本发明涉及至少一个反铁磁层，其与铁磁层直接接触，用于在铁磁层中引起交换偏压。因此，铁磁层被反铁磁层固定，也称为钉扎层。反铁磁性或钉扎层包含来自正交铁素体的化合物，其显示出各种优点。例如，这些反铁磁体可以具有根据化合物的至少623K至740K的Nelel温度TN，并且它们可以显示弱铁磁矩。因此，包括所述结构的磁性装置可以在高工作温度的环境中正确使用。该化合物可以通过式R f 1-x TM x O 3描述，其中R是稀土元素或钇，TM是可以是IB至VIII族元素的过渡金属。化合物也可以通过化合物R1-xSxFeO3中的元素S以另外的价态元素S掺杂，例如钡，镍，锶，钙，钾或钠。

16. 发明授权

US06621732B2 Magnetic element, memory device and write head 有权
公开(公告)号：US06621732B2
公开(公告)日：2003-09-16
申请号：US09972286
申请日：2001-10-05
申请人： Rolf Allenspach , Johannes G Georg Bednorz , Ingmar Meijer
发明人： Rolf Allenspach , Johannes G Georg Bednorz , Ingmar Meijer
IPC分类号： G11C1115
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/127 , G11B5/245 , G11B5/4938 , G11B2005/0013 , G11C11/16 , H01F10/3213 , H01F10/3254 , H01F10/3268
摘要： A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

17. 发明申请

US20130208536A1 MAGNETIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR PRODUCING A MAGNETIC RANDOM ACCESS MEMORY DEVICE 有权
标题翻译：磁性随机访问存储器件及其生产磁性随机访问存储器件的方法
公开(公告)号：US20130208536A1
公开(公告)日：2013-08-15
申请号：US13702165
申请日：2011-06-08
申请人： Rolf Allenspach , Carl Zinoni
发明人： Rolf Allenspach , Carl Zinoni
IPC分类号： G11C11/16 , H01L43/12
CPC分类号： G11C11/15 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/22 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.
摘要翻译：磁性随机存取存储器（MRAM）装置具有经读取字线，写入字线和位线互连的读字线，写字线，位线和多个存储器位元组。每个存储器单元具有固定的铁磁层元件和由电介质隧道势垒元件隔开的自由铁磁层元件。每个写入字线和相应数量的自由铁磁层元件形成为单个连续铁磁线。

18. 发明授权

US07943399B2 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element 有权
标题翻译：适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法
公开(公告)号：US07943399B2
公开(公告)日：2011-05-17
申请号：US12548428
申请日：2009-08-27
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
摘要翻译：通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层的磁性层（例如，两层磁性层之间）。存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。

19. 发明申请

US20090317923A1 SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT 有权
标题翻译：用于电路集成的旋转电流开关磁记忆元件和制造记忆元件的方法
公开(公告)号：US20090317923A1
公开(公告)日：2009-12-24
申请号：US12548428
申请日：2009-08-27
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
摘要翻译：通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层的磁性层（例如，两层磁性层之间）。存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。

20. 发明申请

US20050276149A1 Method of manipulating a quantum system comprising a magnetic moment 有权
标题翻译：操纵包括磁矩的量子系统的方法
公开(公告)号：US20050276149A1
公开(公告)日：2005-12-15
申请号：US10854390
申请日：2004-05-26
申请人： Rolf Allenspach , Gian Salis
发明人： Rolf Allenspach , Gian Salis
IPC分类号： G01V3/00 , G06N99/00 , G11C11/14 , H01L29/12 , H01L29/66
CPC分类号： H01L29/127 , B82Y10/00 , G06N99/002 , G11C11/14 , H01L29/66984
摘要： A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also comprises bringing the charge carrier into an oscillatory movement along a path. The magnetic field depends on the position of the charge carrier on said path. The oscillatory movement may be caused by electrostatic interaction with gate electrodes. Due to this approach, thus, in a magnetic moment resonance process the conventional oscillating magnetic field is replaced by an oscillating electric field which is locally transformed into a magnetic field by the Coulomb interaction that displaces the charge carrier wave function within an inhomogeneous magnetic field or in and out of a magnetic field.
摘要翻译：用于操纵量子系统的方法包括至少一个具有磁矩的移动电荷载体。该方法包括向电荷载体施加磁场的步骤或动作。磁性在空间上不均匀。该方法还包括使电荷载体沿着路径进行振荡运动。磁场取决于电荷载体在所述路径上的位置。振荡运动可能是由于与栅电极的静电相互作用引起的。因此，在这种方法中，在磁矩共振过程中，常规的振荡磁场由通过库仑相互作用而局部转换成磁场的振荡电场代替，这种库仑相互作用将电荷载波函数置于不均匀的磁场内，或进出磁场。

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