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11. 发明申请

US20060164879A1 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry 失效
标题翻译：具有与其状态改变电路共享的传感器电路的非易失性铁磁存储器
公开(公告)号：US20060164879A1
公开(公告)日：2006-07-27
申请号：US11386947
申请日：2006-03-23
申请人： Richard Lienau , James Stephenson
发明人： Richard Lienau , James Stephenson
IPC分类号： G11C11/22
CPC分类号： G11C11/14 , B82Y10/00 , G11C11/16 , G11C11/22 , H01L27/222
摘要： Several methods may be employed to make this cell including, but not limited to, electroplating, sputtering, E-beam deposition, chemical vapor deposition and molecular beam epitaxy. Numerous modifications and alternative arrangements may be devised by those skilled in the art without departing from the spirit and scope of the present invention and the appended claims are intended to cover such modifications and arrangements. Thus, while the present invention has been described above with particularity and detail in connection with what is presently deemed to be the most practical and preferred embodiments of the invention, it will be apparent to those of ordinary skill in the art that numerous modifications, including, but not limited to, variations in size, materials, shape, form, function, manner of operation, assembly, and use may be made without departing from the principles and concepts set forth herein.
摘要翻译：可以使用几种方法来制造该电池，包括但不限于电镀，溅射，电子束沉积，化学气相沉积和分子束外延。在不脱离本发明的精神和范围的情况下，本领域技术人员可以设计出许多修改和替代布置，并且所附权利要求旨在覆盖这些修改和布置。因此，虽然以上已经结合目前被认为是本发明最实用和优选的实施例的具体和细节描述了本发明，但是对于本领域普通技术人员来说显而易见的是包括但不限于，在不脱离本文阐述的原理和概念的情况下，可以进行尺寸，材料，形状，形式，功能，操作方式，组装和使用的变化。

12. 发明授权

US07616477B2 Non-volatile magnetic memory device 失效
标题翻译：非易失性磁存储器件
公开(公告)号：US07616477B2
公开(公告)日：2009-11-10
申请号：US12114539
申请日：2008-05-02
申请人： James Stephenson , Bruce Shipley , Dan Carothers
发明人： James Stephenson , Bruce Shipley , Dan Carothers
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.
摘要翻译：具有不具有多个线段的磁性元件的非易失性磁性存储单元。使用单个写入线，每个段用残留磁场磁化。这些段可以在对应于存储单元的第一和第二取向的第一方向或第二方向上被磁化。提供传感器以确定段被磁化的方向，从而确定电池的取向。这些段被定向成使得由它们各自的残余磁场产生的磁通场在传感器的感测区域具有累积效应。累积效应允许使用比已知设备更低灵敏度的传感器。在各种实施例中，磁性元件可以具有多个线性段或弯曲轮廓。在另一个实施例中，多个磁性元件被单个写入线磁化。多个磁性元件布置成可以累积地感测存储在其中的残余磁场。在另一个实施例中，磁性元件布置成沿单个大致方向被磁化，但被成形为使得磁通线从其沿不同方向发出。布置不同的方向以引导通过传感器的感测区域的通量线，其测量它们的累积效应。

13. 发明申请

US20070103970A1 Non-volatile ferromagnegtic memory having sensor circuitry shared with its state change circuitry 失效
标题翻译：具有与其状态改变电路共享的传感器电路的非易失性铁电存储器
公开(公告)号：US20070103970A1
公开(公告)日：2007-05-10
申请号：US11645160
申请日：2006-12-26
申请人： Richard Lienau , James Stephenson
发明人： Richard Lienau , James Stephenson
IPC分类号： G11C11/00
CPC分类号： G11C11/14 , B82Y10/00 , G11C11/16 , G11C11/22 , H01L27/222
摘要： A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit (19) has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.
摘要翻译：公开了一种铁磁存储器单元，其具有在水平面中定向的基座（21），由铁磁材料制成的钻头（19）和位于钻头（19）附近的感测/写入线（20），足够当向其施加第一电流时检测位的定向极性，并且在向给定方向施加第二较大电流时引导位的极性。钻头（19）具有垂直于基座的水平面的高度，以及可以沿着高度引导的极性。

14. 发明申请

US20060285383A1 Non-volatile magnetic memory device 失效
公开(公告)号：US20060285383A1
公开(公告)日：2006-12-21
申请号：US11449027
申请日：2006-06-08
申请人： James Stephenson , Bruce Shipley , Dan Carothers
发明人： James Stephenson , Bruce Shipley , Dan Carothers
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.

15. 发明申请

US20100020596A1 NON-VOLATILE MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：非挥发性磁记忆体装置
公开(公告)号：US20100020596A1
公开(公告)日：2010-01-28
申请号：US12574097
申请日：2009-10-06
申请人： James Stephenson , Bruce Shipley , Dan Carothers
发明人： James Stephenson , Bruce Shipley , Dan Carothers
IPC分类号： G11C11/18 , G01R33/02 , G11C11/14 , H01L29/82
CPC分类号： G11C11/15 , G11C11/1675
摘要： A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.
摘要翻译：具有不具有多个线段的磁性元件的非易失性磁性存储单元。使用单个写入线，每个段用残留磁场磁化。这些段可以在对应于存储单元的第一和第二取向的第一方向或第二方向上被磁化。提供传感器以确定段被磁化的方向，从而确定电池的取向。这些段被定向成使得由它们各自的残余磁场产生的磁通场在传感器的感测区域具有累积效应。累积效应允许使用比已知设备更低灵敏度的传感器。在各种实施例中，磁性元件可以具有多个线性段或弯曲轮廓。在另一个实施例中，多个磁性元件被单个写入线磁化。多个磁性元件布置成可以累积地感测存储在其中的残余磁场。在另一个实施例中，磁性元件布置成沿单个大致方向被磁化，但被成形为使得磁通线从其沿不同方向发出。布置不同的方向以引导通过传感器的感测区域的通量线，其测量它们的累积效应。

16. 发明授权

US07376007B2 Non-volatile magnetic memory device 失效
标题翻译：非易失性磁存储器件
公开(公告)号：US07376007B2
公开(公告)日：2008-05-20
申请号：US11449027
申请日：2006-06-08
申请人： James Stephenson , Bruce Shipley , Dan Carothers
发明人： James Stephenson , Bruce Shipley , Dan Carothers
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.
摘要翻译：具有不具有多个线段的磁性元件的非易失性磁性存储单元。使用单个写入线，每个段用残留磁场磁化。这些段可以在对应于存储单元的第一和第二取向的第一方向或第二方向上被磁化。提供传感器以确定段被磁化的方向，从而确定电池的取向。这些段被定向成使得由它们各自的残余磁场产生的磁通场在传感器的感测区域具有累积效应。累积效应允许使用比已知设备更低灵敏度的传感器。在各种实施例中，磁性元件可以具有多个线性段或弯曲轮廓。在另一个实施例中，多个磁性元件被单个写入线磁化。多个磁性元件布置成可以累积地感测存储在其中的残余磁场。在另一个实施例中，磁性元件布置成沿单个大致方向被磁化，但被成形为使得磁通线从其沿不同方向发出。布置不同的方向以引导通过传感器的感测区域的通量线，其测量它们的累积效应。

17. 发明授权

US07110312B2 Non-volatile magnetic memory device 失效
公开(公告)号：US07110312B2
公开(公告)日：2006-09-19
申请号：US10039296
申请日：2001-10-19
申请人： James Stephenson , Bruce Shipley , Dan Carothers
发明人： James Stephenson , Bruce Shipley , Dan Carothers
IPC分类号： G11C7/02
CPC分类号： G11C11/15
摘要： A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.

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