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11. 发明授权

US08546829B2 Posts in glue layer for group-III nitride LEDs 有权
标题翻译： III-III族氮化物LED胶层的柱
公开(公告)号：US08546829B2
公开(公告)日：2013-10-01
申请号：US13185845
申请日：2011-07-19
申请人： Ray-Hua Horng , Heng Liu , Yi-An Lu
发明人： Ray-Hua Horng , Heng Liu , Yi-An Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/641
摘要： A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure.
摘要翻译：对半导体发光元件及半导体发光元件的制造方法进行说明。半导体发光器件包括具有第一类型掺杂层，发光层和第二类型掺杂层的外延结构。外延结构还可以包括未掺杂的层。用粘合剂层将衬底结合到外延结构的至少一个表面。一个或多个柱位于粘合剂层中。柱可以具有不同的宽度，这取决于柱的位置和/或柱可以仅位于外延结构的特定部分之下。

12. 发明申请

US20120193652A1 LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS 审中-公开
标题翻译： LED阵列由互连和周边LED灯形成
公开(公告)号：US20120193652A1
公开(公告)日：2012-08-02
申请号：US13287542
申请日：2011-11-02
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L24/24 , H01L33/54 , H01L33/62 , H01L33/641 , H01L2224/24137 , H01L2224/73267 , H01L2924/12041 , H01L2924/15788 , H01L2933/0066 , H01L2924/00
摘要： A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect).
摘要翻译：发光二极管阵列包括具有第一电极的第一发光二极管和具有第二电极的第二发光二极管。第一和第二发光二极管被分离。第一聚合物层位于发光二极管之间。至少部分地位于第一聚合物层上的互连将第一电极连接到第二电极。永久基板耦合到发光二极管。永久性基板通过互连件耦合到发光二极管的侧面。第二聚合物层至少部分地封装与永久基板相对的发光二极管的侧面（与互连件相对的一侧）。

13. 发明授权

US08193546B2 Light-emitting-diode array with polymer between light emitting devices 有权
标题翻译：具有聚合物的发光二极管阵列在发光器件之间
公开(公告)号：US08193546B2
公开(公告)日：2012-06-05
申请号：US12948504
申请日：2010-11-17
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L21/00 , H01L21/44 , H01L29/207 , H01L29/06 , H01L23/48
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L27/156 , H01L33/50 , H01L33/56 , H01L33/62 , H01L2924/01012 , H01L2924/01029 , H01L2924/12041 , H01L2924/00
摘要： A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first and the second LED device are formed on a common substrate and are separated by a gap. At least one polymer material substantially fills the gap. An interconnect, formed on top of the at least one polymer material, electrically connects the first electrode and the second electrode.
摘要翻译：发光二极管（LED）阵列包括具有第一电极的第一LED器件和具有第二电极的第二LED器件。第一和第二LED器件形成在公共衬底上并被间隙隔开。至少一种聚合物材料基本上填充该间隙。在所述至少一种聚合物材料的顶部上形成的互连电连接所述第一电极和所述第二电极。

14. 发明申请

US20110092005A1 LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管阵列及其制造方法
公开(公告)号：US20110092005A1
公开(公告)日：2011-04-21
申请号：US12975068
申请日：2010-12-21
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L2224/16225 , H01L2224/16227 , H01L2224/24137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2933/0066
摘要： A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode.
摘要翻译：公开了一种用于形成发光二极管（LED）阵列的方法，其包括在衬底上形成LED结构，将LED结构分成具有间隙的至少第一和第二LED器件，沉积至少一种聚合物材料在所述LED结构上基本上填充所述间隙，去除所述至少一种聚合物材料的部分以暴露所述第一LED器件的第一电极和所述第二LED器件的第二电极，以及在所述至少一种聚合物的顶部上形成互连电连接第一和第二电极的材料。

15. 发明授权

US08895332B2 Light-emitting diode chip with high light extraction and method for manufacturing the same 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US08895332B2
公开(公告)日：2014-11-25
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L21/00 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

16. 发明授权

US08785947B2 Semiconductor substrate for growth of an epitaxial semiconductor device 有权
标题翻译：用于外延半导体器件生长的半导体衬底
公开(公告)号：US08785947B2
公开(公告)日：2014-07-22
申请号：US12648012
申请日：2009-12-28
申请人： Dong-Sing Wuu , Ray-Hua Horng , Chia-Cheng Wu , Po-Rung Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Chia-Cheng Wu , Po-Rung Lin
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02491 , H01L21/0242 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
摘要翻译：半导体衬底包括：基底层; 牺牲层，其形成在基底层上并且包括多个间隔的牺牲膜区域和多个第一通道，每个第一通道限定在两个相邻的牺牲膜区域之间。每个牺牲膜区域具有多个纳米结构和在纳米结构之间限定的多个第二通道。第二通道与第一通道空间通信，并且具有小于第一通道的宽度的宽度。外延层设置在牺牲层上。

17. 发明授权

US08680554B2 Epitaxial structure and method for making the same 有权
标题翻译：外延结构及其制作方法
公开(公告)号：US08680554B2
公开(公告)日：2014-03-25
申请号：US13331530
申请日：2011-12-20
申请人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
发明人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
IPC分类号： H01L21/02
CPC分类号： H01L21/02002 , H01L21/02483 , H01L21/0254 , H01L33/0079
摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
摘要翻译：制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

18. 发明授权

US08624262B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08624262B2
公开(公告)日：2014-01-07
申请号：US12903852
申请日：2010-10-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L29/15 , H01L31/0312 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.
摘要翻译：发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。

19. 发明申请

US20120168914A1 EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME 有权
标题翻译：外来结构及其制造方法
公开(公告)号：US20120168914A1
公开(公告)日：2012-07-05
申请号：US13331530
申请日：2011-12-20
申请人： Dong-Sing WUU , Ray-Hua Horng , Tsung-Yen Tsai
发明人： Dong-Sing WUU , Ray-Hua Horng , Tsung-Yen Tsai
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L21/02002 , H01L21/02483 , H01L21/0254 , H01L33/0079
摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
摘要翻译：制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

20. 发明授权

US08076689B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08076689B2
公开(公告)日：2011-12-13
申请号：US12540635
申请日：2009-08-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding.
摘要翻译：发光二极管包括外延层，电极，导电构件，光入射层，光反射层，粘合剂和导电永久基板。外延层具有第一和第二表面。电极设置在外延层的第二表面上。导电构件形成在外延层的第一表面上并且彼此间隔开。在不形成导电构件的区域，在外延层的第一表面上形成光入射层。光反射层形成在光入射层和导电构件上，并且具有凹入部分和非凹进部分。粘合剂设置在光反射层的凹进部分中。永久性基板通过粘合剂并通过晶片接合结合到光反射层。

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