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11. 发明申请

US20130122711A1 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：US20130122711A1
公开(公告)日：2013-05-16
申请号：US13294053
申请日：2011-11-10
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

12. 发明申请

US20130023064A1 Negative Ion Control for Dielectric Etch 有权
标题翻译：介质蚀刻负离子控制
公开(公告)号：US20130023064A1
公开(公告)日：2013-01-24
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

13. 发明申请

US20110070743A1 APPARATUS AND METHODS FOR EDGE RING IMPLEMENTATION FOR SUBSTRATE PROCESSING 有权
标题翻译：用于基板加工的边缘实施的装置和方法
公开(公告)号：US20110070743A1
公开(公告)日：2011-03-24
申请号：US12951886
申请日：2010-11-22
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01L21/6732 , H01J37/32091 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并被第一边缘环包围。第一边缘环与卡盘电隔离。该方法包括提供第二边缘环。第二边缘环设置在基板的边缘下方。该方法还包括提供耦合环。联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化在基板处理期间在第二边缘环处环形并最小化。该方法还包括提供绝缘体环，其中第二边缘环设置在绝缘体环上方。

14. 发明申请

US20110059615A1 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 有权
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：US20110059615A1
公开(公告)日：2011-03-10
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

15. 发明申请

US20080020574A1 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US20080020574A1
公开(公告)日：2008-01-24
申请号：US11487999
申请日：2006-07-18
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

16. 发明授权

US09536711B2 Method and apparatus for DC voltage control on RF-powered electrode 有权
标题翻译： RF电源电压直流电压控制方法及装置
公开(公告)号：US09536711B2
公开(公告)日：2017-01-03
申请号：US12047820
申请日：2008-03-13
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及负直流电源通过RF滤波器控制等离子体处理参数。

17. 发明授权

US08847495B2 Movable grounding arrangements in a plasma processing chamber and methods therefor 有权
标题翻译：等离子体处理室中的可移动接地装置及其方法
公开(公告)号：US08847495B2
公开(公告)日：2014-09-30
申请号：US13616641
申请日：2012-09-14
申请人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： H01J7/24
CPC分类号： H01J37/32082 , H01J37/32577
摘要： A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.
摘要翻译：一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件加上地面。等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

18. 发明授权

US08826855B2 C-shaped confinement ring for a plasma processing chamber 有权
标题翻译：用于等离子体处理室的C形限制环
公开(公告)号：US08826855B2
公开(公告)日：2014-09-09
申请号：US12828065
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32623
摘要： Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber.
摘要翻译：这里描述的是用作电容耦合等离子体处理室的组件的限制环。限制环的内表面提供了在腔室中的等离子体处理期间围绕上部电极和下部电极之间的间隙的延长的等离子体限制区域，其上支撑半导体衬底。

19. 发明申请

US20140060739A1 RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
标题翻译：等离子体处理系统中的RF接地回路及其方法
公开(公告)号：US20140060739A1
公开(公告)日：2014-03-06
申请号：US13662331
申请日：2012-10-26
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
IPC分类号： H01J37/04
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.
摘要翻译：公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

20. 发明申请

US20140034243A1 APPARATUS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE 审中-公开
标题翻译：用于具有可调电容的等离子体处理系统的装置
公开(公告)号：US20140034243A1
公开(公告)日：2014-02-06
申请号：US14058101
申请日：2013-10-18
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01J37/21
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32642 , H01J37/32697
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The system includes a RF power, which provides power to the chuck. The system also includes a tunable capacitance arrangement, which is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The system further includes the plasma processing chamber configured to strike plasma to process the substrate, which is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.
摘要翻译：提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。该系统包括向卡盘供电的RF功率。该系统还包括可调电容布置，其耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。该系统还包括等离子体处理室，该等离子体处理室被配置成撞击等离子体以处理衬底，该处理在可调谐电容布置被配置成使得边缘环电位在处理衬底的同时能够动态调节到衬底的DC电位。

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