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11. 发明申请

US20110043823A1 OPTICAL FILTER AND METHOD FOR THE PRODUCTION OF THE SAME, AND DEVICE FOR THE EXAMINATION OF ELECTROMAGNETIC RADIATION 有权
标题翻译：光学滤波器及其制造方法以及用于检查电磁辐射的装置
公开(公告)号：US20110043823A1
公开(公告)日：2011-02-24
申请号：US12376690
申请日：2007-08-09
申请人： Hartmut Hillmer , Wolfgang Koecher , Juergen Krieg , Carl Sandhagen , Hardy Hoheisel , Winfried Willemer
发明人： Hartmut Hillmer , Wolfgang Koecher , Juergen Krieg , Carl Sandhagen , Hardy Hoheisel , Winfried Willemer
IPC分类号： G01B9/02 , B23P11/00 , G02B5/28 , B82Y40/00
CPC分类号： G02B5/284 , A61B5/0075 , B82Y10/00 , B82Y40/00 , G01J3/02 , G01J3/0259 , G01J3/2803 , G01J3/36 , G01J3/4406 , G01J3/51 , G02B5/201 , G02B5/288 , G03F7/0002 , H01L27/14621 , H01L27/14685 , Y10T29/49826
摘要： The invention relates to an optical filter and a method for its production, and to a device for the examination of the spectral and spatial distribution of an electromagnetic radiation irradiated from an object. The invention is based on the task of providing an optical filter of the above described type that is inexpensive to produce, which can be used to detect a plurality of wavelengths, in which, however, tuning of the DBR mirrors by means of displacement is not necessary. Furthermore, a method for the production of such a filter is provided. According to a first aspect of the present invention this task is solved by a method for the production of an optical filter array having two DBR mirrors, and a cavity present between the same, comprising cavity sections having a plurality of different heights, each forming one Fabry Perot filter element, characterized by the following steps: applying a first DBR mirror onto a substrate, forming of a layer comprised of a cavity material on the DBR mirror, wherein this layer is equipped with a plurality of cavity sections forming the filter elements by means of utilizing a nanoimprint method, and applying the second DBR mirror on the cavity material having a structuring that is defined by the different heights of the cavity sections.
摘要翻译：本发明涉及一种光学滤波器及其制造方法，以及用于检查从物体照射的电磁辐射的光谱和空间分布的装置。本发明基于提供上述类型的光学滤波器的任务，该滤波器便于制造，其可用于检测多个波长，然而，通过位移调节DBR反射镜不是必要。此外，提供了一种用于生产这种过滤器的方法。根据本发明的第一方面，该任务通过一种用于制造具有两个DBR反射镜的光学滤光片阵列的方法和在其之间存在的空腔来实现，该腔体包括具有多个不同高度的空腔部分，每个形成一个法布里·珀罗滤光元件，其特征在于以下步骤：将第一DBR反射镜施加到基板上，在DBR反射镜上形成由空腔材料构成的层，其中该层配备有多个通过形成滤光元件的空腔部分利用纳米压印方法的手段，以及将第二DBR反射镜应用于具有由空腔部分的不同高度限定的结构的腔体材料。

12. 发明申请

US20090141279A1 SENSOR DEVICE AND FOR DETERMINING A PHYSICAL VALUE 有权
标题翻译：传感器设备和用于确定物理值
公开(公告)号：US20090141279A1
公开(公告)日：2009-06-04
申请号：US11572722
申请日：2005-07-06
申请人： Hartmut Hillmer
发明人： Hartmut Hillmer
IPC分类号： G01N21/00
CPC分类号： G01N21/39
摘要： A sensor process and device are described for determining a physical value by means of a laser whose emission properties can be influenced by the physical value. The laser is designed to radiate at least two concurrent modes (E1, E2, E1′, E2′) above the laser threshold. The physical value is determined by comparing the influence of changes in the at least two modes resulting from the influence of the physical value (such as ΔI). The physical value can be, for example, a substance concentration, length, temperature, pressure or electric current.
摘要翻译：描述了用于通过其发射特性可以受物理值影响的激光来确定物理值的传感器处理和装置。激光器被设计为辐射至少两个并发模式（E1，E2，E1'，E2'）高于激光阈值。通过比较由物理值（如DeltaI）的影响产生的至少两种模式中的变化的影响来确定物理值。物理值可以是例如物质浓度，长度，温度，压力或电流。

13. 发明授权

US07054340B1 Method and deivce for tuning the wavelength of an optoelectronic component arrangement 有权
标题翻译：用于调整光电子部件布置的波长的方法和装置
公开(公告)号：US07054340B1
公开(公告)日：2006-05-30
申请号：US09555662
申请日：1998-10-21
申请人： Hartmut Hillmer , Bernd Klepser
发明人： Hartmut Hillmer , Bernd Klepser
IPC分类号： H01S3/10
CPC分类号： H01S5/0612 , H01S5/40 , H01S5/4025 , H01S5/4031
摘要： A method and device for tuning the wavelength of an optoelectronic component arrangement including at least two optoelectronic components. The characteristic wavelength for each optoelectronic component is adjusted using a respective resistance device which is connected between a common voltage/power source and a respective heating device associated with each optoelectronic component. Heating capacity is modified by changing the overall resistance of the respective resistance device (RM) in order to adjust wavelength. The wavelength of semiconductor lasers, filters, wavelength multiplexers and waveguides may be tuned.
摘要翻译：一种用于调谐包括至少两个光电子部件的光电子部件布置的波长的方法和装置。使用连接在公共电压/电源和与每个光电子部件相关联的相应加热装置之间的相应电阻装置来调整每个光电子部件的特征波长。为了调整波长，通过改变各个电阻装置（RM）的整体电阻来修改加热容量。可以调节半导体激光器，滤波器，波长多路复用器和波导的波长。

14. 发明授权

US5601731A Process for the production of an optoelectronic component having a defined axial variation of the coupling coefficient and a defined axial distribution of the phase shift 失效
标题翻译：用于生产具有限定的耦合系数的轴向变化和相移的确定的轴向分布的光电子部件的方法
公开(公告)号：US5601731A
公开(公告)日：1997-02-11
申请号：US401168
申请日：1995-03-09
申请人： Hartmut Hillmer
发明人： Hartmut Hillmer
IPC分类号： G02B5/18 , G02B6/12 , G02B6/124 , G03F7/00 , H01S5/10 , H01S5/12 , H01L21/00 , B44C1/22
CPC分类号： H01S5/12 , G02B5/1857 , G02B6/124 , G03F7/001 , G02B2006/12176 , H01S5/10 , H01S5/1021 , H01S5/1064 , H01S5/1231
摘要： The process for production of an optoelectronic component having a predetermined coupling coefficient distribution and a predetermined phase shift distribution includes providing a photomask defining lateral and axial geometry of the grating fields of the optoelectronic compound, particularly predetermined curved grating boundaries between regions of the optoelectronic component having the grating fields and grating-free regions; performing a spin-on deposition of a photoresist on the semiconductor layers of a semiconductor substrate; structuring the semiconductor layers so that a DFB or DBR grating structure is located between the spin-on photoresist and the semiconductor substrate; after performing the spin-on deposition of the photoresist, exposing the photoresist using the provided photomask to form the optoelectronic component in the semiconductor substrate; and after the exposing of the photoresist using the photomask, etching surfaces of the optoelectronic component which are to be free of the grating fields to remove material to a minimum depth reaching a horizontal xz-plane corresponding to deepest points in the grating trenches of the grating fields.
摘要翻译：具有预定耦合系数分布和预定相移分布的光电子部件的制造方法包括提供光学掩模，该光掩模限定光电子化合物的光栅场的横向和轴向几何形状，特别是具有光电子部件的区域之间的预定弯曲光栅边界，光栅场和光栅区域; 在半导体衬底的半导体层上进行光刻胶的自旋沉积; 构造半导体层，使得DFB或DBR光栅结构位于旋涂光致抗蚀剂和半导体衬底之间; 在进行光致抗蚀剂的旋涂沉积之后，使用所提供的光掩模曝光光致抗蚀剂以在半导体衬底中形成光电子部件; 并且在使用光掩模曝光光致抗蚀剂之后，蚀刻光电子部件的不受光栅场的表面，以将材料移除到达到与光栅的光栅沟槽中的最深点相对应的水平xz平面的最小深度领域。

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