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    • 17. 发明授权
    • Interferometric semiconductor laser device
    • 干涉半导体激光器件
    • US4777637A
    • 1988-10-11
    • US804575
    • 1985-12-04
    • Hiroshi HayashiOsamu YamamotoSaburo Yamamoto
    • Hiroshi HayashiOsamu YamamotoSaburo Yamamoto
    • H01S5/00H01S5/10H01S5/223H01S3/19
    • H01S5/10H01S5/2232H01S5/2234
    • An interferometric semiconductor laser device having a built-in effective refraction index difference, based on the absorption of light by a substrate, between the portion of the active layer corresponding to the inside area of a striped channel formed on the surface of said substrate and the portion of the active layer corresponding to the outside area of said striped channel, wherein regions, which are positioned between the active layer and the substrate in the outside area of said channel along a waveguide formed in the active layer corresponding to said channel, are different from each other in the distance between the active layer and the substrate, thereby creating a difference in the effective refraction index between the portions of the active layer corresponding to said regions.
    • 一种干涉式半导体激光装置,其具有基于衬底的光的吸收而在所述有源层的与形成在所述衬底的表面上的条纹沟道的内部区域相对应的部分之间的有效折射率差和 有源层的对应于所述条纹沟道的外部区域的部分,其中位于所述沟道的外部区域中的有源层和衬底之间的区域沿着形成在与所述沟道相对应的有源层中的波导形成不同 在有源层和衬底之间的距离处彼此相对,从而在对应于所述区域的有源层的部分之间产生有效折射率的差异。