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    • 12. 发明申请
    • METHOD OF MANUFACTURING CAPACITOR
    • 制造电容器的方法
    • US20100093150A1
    • 2010-04-15
    • US12635838
    • 2009-12-11
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • H01L21/02
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 μm or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon.Another capacitor fabrication process of the invention comprises a separation layer formation step of forming a separation layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the separation layer, a metal foil formation step of forming a metal foil of 10 μm or more in thickness on the dielectric layer, a separation step of separating the substrate from the separation layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by said separation step via the separation layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil formed thereon. It is thus possible to obtain a thin-film capacitor at low costs and high yields that has an ever higher capacity, is so slimmed down in its entirety that it has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 本发明的一个电容器制造方法包括在基板的一个表面上形成贵金属层的贵金属层形成步骤,在贵金属层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上的厚度为10μm以上的金属箔,在界面处将贵金属层与电介质层分离的分离工序,以及在电介质的第二面上形成电极层的电极层形成工序 通过分离步骤分离的层,其中第二表面背面与金属箔形成在介质层的第一表面之间。 本发明的另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层形成步骤,在分离层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在介电层上的厚度为10μm以上的分离步骤,在界面处分离衬底与分离层的分离步骤,以及电极层形成步骤,在由所述介电层分离的介电层的第二表面上形成电极层 分离步骤,其中所述第二表面背离所述电介质层的所述第一表面,其中形成有所述金属箔。 因此,可以以低成本和高产率获得具有更高容量的薄膜电容器,其整体尺寸如此薄弱,使得其具有适合埋入基板中的形状,并且可以使用 即使在高频。
    • 14. 发明授权
    • Magnetoresistance device
    • 磁阻装置
    • US5923504A
    • 1999-07-13
    • US817098
    • 1997-04-18
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • G11B5/39H01F10/32H01L43/08H01L43/10G11B5/127
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3919G11B5/3922G11B5/3925G11B5/399H01F10/3268H01L43/08H01L43/10G11B2005/3996G11B5/39G11B5/3932
    • According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.
    • PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102(e)1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明,对具有磁阻效应元件的磁阻器件,由于使用具有反铁磁性的氧化铁FeOx作为钉扎层,因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7%Oe的磁阻比。 此外,在零磁场下,MR曲线的上升特性非常优异,滞后小,耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中,例如,使用具有磁性多层膜的磁阻效应元件的MR磁头,输出电压大约是常规材料的5倍。 因此,可以提供极高的可靠性的极好的MR磁头,并能够读取超过1Gbit / inch2的超高密度磁记录。
    • 15. 发明授权
    • Method of manufacturing capacitor
    • 制造电容器的方法
    • US08085523B2
    • 2011-12-27
    • US12635838
    • 2009-12-11
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • H01G4/06
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 一种电容器制造方法,包括在基板的一个表面上形成金属层的金属层,在金属层上形成电介质层的介电层,在介电层上形成金属箔的金属箔,将贵金属层与电介质层分离, 以及在所述电介质层的第二表面上形成电极层的电极层,其中所述第二表面与所述金属箔相离离所述电介质层的所述第一表面。 另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层,在分离层上形成电介质层的介电层,形成介电层的金属箔,从分离层分离基板的金属箔和电极 在所述电介质层的第二表面上形成电极层,其中所述第二表面用所述金属箔离开所述电介质层的所述第一表面。 薄膜电容器具有更高的容量,如此薄型化,并且具有很好地埋入基板中的形状,并且甚至可以在高频下使用。
    • 16. 发明申请
    • METHOD OF MANUFACTURING CAPACITOR
    • 制造电容器的方法
    • US20080072409A1
    • 2008-03-27
    • US11779597
    • 2007-07-18
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • H01G4/008
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 μm or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon. Another capacitor fabrication process of the invention comprises a separation layer formation step of forming a separation layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the separation layer, a metal foil formation step of forming a metal foil of 10 μm or more in thickness on the dielectric layer, a separation step of separating the substrate from the separation layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by said separation step via the separation layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil formed thereon. It is thus possible to obtain a thin-film capacitor at low costs and high yields that has an ever higher capacity, is so slimmed down in its entirety that it has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 本发明的一个电容器制造方法包括在基板的一个表面上形成贵金属层的贵金属层形成步骤,在贵金属层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上的厚度为10μm或更大的金属箔,在界面处将贵金属层与电介质层分离的分离步骤和在电介质的第二表面上形成电极层的电极层形成步骤 通过分离步骤分离的层,其中第二表面背面与金属箔形成在介质层的第一表面之间。 本发明的另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层形成步骤,在分离层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上具有10μm以上的厚度的分离步骤,在界面处分离衬底与分离层的分离步骤,以及电极层形成步骤,在由所述电介质层分离的电介质层的第二表面上形成电极层 分离步骤,其中所述第二表面背离所述电介质层的所述第一表面,其中形成有所述金属箔。 因此,可以以低成本和高产率获得具有更高容量的薄膜电容器,其整体尺寸如此薄弱,使得其具有适合埋入基板中的形状,并且可以使用 即使在高频。