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11. 发明申请

US20120024388A1 MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD 有权
标题翻译：多通道直通通道
公开(公告)号：US20120024388A1
公开(公告)日：2012-02-02
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： F16L37/56
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

12. 发明申请

US20090194024A1 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：US20090194024A1
公开(公告)日：2009-08-06
申请号：US12023520
申请日：2008-01-31
申请人： Brian H. Burrows , Ronald Stevens , Jacob Grayson , Joshua J. Podesta , Sandeep Nijhawan , Lori D. Washington , Alexander Tam , Sumedh Acharya
发明人： Brian H. Burrows , Ronald Stevens , Jacob Grayson , Joshua J. Podesta , Sandeep Nijhawan , Lori D. Washington , Alexander Tam , Sumedh Acharya
IPC分类号： C23C16/52 , C23C16/46
CPC分类号： C23C16/452 , C23C16/481 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.
摘要翻译：本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。该装置包括限定处理量的室主体。第一平面中的喷头定义了处理量的顶部。载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。多个灯形成位于透明材料下方的一个或多个区域。该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

13. 发明申请

US20080289575A1 METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS 审中-公开
标题翻译：使用氢化物蒸气相外延过程沉积III-V族薄膜的方法和装置
公开(公告)号：US20080289575A1
公开(公告)日：2008-11-27
申请号：US11753376
申请日：2007-05-24
申请人： Brian H. Burrows , Nyi O. Myo , Ronald Stevens , Jacob Grayson , Lori D. Washington , Sandeep Nijhawan
发明人： Brian H. Burrows , Nyi O. Myo , Ronald Stevens , Jacob Grayson , Lori D. Washington , Sandeep Nijhawan
IPC分类号： C23C16/08
CPC分类号： C30B29/403 , C23C16/4488 , C23C16/4584 , C30B25/02 , C30B25/14
摘要： An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.
摘要翻译：提供了用于沉积氢化物气相外延（HVPE）工艺的III-V族的改进方法和装置。在一个实施例中，用于氢化物气相外延工艺的装置可以包括细长体，其具有限定在第一和第二壁之间的槽，在第一壁中形成的通道，其被配置成向槽提供气体，以及入口形成在与身体相连的通道上。在另一个实施方案中，氢化物气相外延法的方法可以包括在设置在室中的容器中提供III族金属液体前体，使含卤素气体流过容器以形成第III族金属卤化物蒸汽至反应区并且将III族金属卤化物蒸气与在反应区中的室中供应的V族气体混合。

14. 发明授权

US08481118B2 Multi-gas straight channel showerhead 有权
标题翻译：多气直通花洒
公开(公告)号：US08481118B2
公开(公告)日：2013-07-09
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/06 , C23C16/08 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

15. 发明申请

US20090149008A1 METHOD FOR DEPOSITING GROUP III/V COMPOUNDS 审中-公开
标题翻译：沉积III / V族化合物的方法
公开(公告)号：US20090149008A1
公开(公告)日：2009-06-11
申请号：US12244440
申请日：2008-10-02
申请人： Olga Kryliouk , Sandeep Nijhawan , Yuriy Melnik , Lori D. Washington , Jacob W. Grayson , Sung W. Jun , Jie Su
发明人： Olga Kryliouk , Sandeep Nijhawan , Yuriy Melnik , Lori D. Washington , Jacob W. Grayson , Sung W. Jun , Jie Su
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45578 , C30B29/403
摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.
摘要翻译：本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

16. 发明申请

US20110117728A1 METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
标题翻译：现场室清洁后过程室去除的方法
公开(公告)号：US20110117728A1
公开(公告)日：2011-05-19
申请号：US12868899
申请日：2010-08-26
申请人： Jie Su , Lori D. Washington , Sandeep Nijhawan , Olga Kryliouk , Jacob Grayson , Sang Won Kang , Dong Hyung Lee , Hua Chung
发明人： Jie Su , Lori D. Washington , Sandeep Nijhawan , Olga Kryliouk , Jacob Grayson , Sang Won Kang , Dong Hyung Lee , Hua Chung
IPC分类号： H01L21/20 , B08B9/00
CPC分类号： C23C16/4405 , C23C16/4404 , C23C16/45574 , H01L21/67115
摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.
摘要翻译：一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。将含卤素气体提供到室以蚀刻掉沉积产物。将卤素清除气体提供到室以除去任何残留的卤素。卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

17. 发明申请

US20090194026A1 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于制备化合物氮化物半导体器件的处理系统
公开(公告)号：US20090194026A1
公开(公告)日：2009-08-06
申请号：US12023572
申请日：2008-01-31
申请人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
发明人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C30B25/08 , C30B29/403 , C30B35/00 , H01L21/67017 , H01L21/67115 , H01L21/67161 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.
摘要翻译：用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的可操作的一个或多个处理室，与处理室耦合的传送室，与传送室耦合的负载锁定室，以及加载站与负载锁定室耦合，其中装载站包括可移动以将装载有一个或多个基板的承载板输送到负载锁定室中的输送器托盘。与单室反应器相比，多室处理系统扩大了复合结构的潜在复杂性和多样性。此外，该系统可以通过专用于特定外延生长工艺的各个室来实现更高的质量和产量。通过在多个室中同时处理来提高吞吐量。

18. 发明申请

US20110308453A1 CLOSED LOOP MOCVD DEPOSITION CONTROL 审中-公开
标题翻译：闭环MOCVD沉积控制
公开(公告)号：US20110308453A1
公开(公告)日：2011-12-22
申请号：US12812222
申请日：2009-01-23
申请人： Jie Su , Lori D. Washington , David Bour , Jacob Grayson , Sandeep Nijhawan , Ronald Stevens
发明人： Jie Su , Lori D. Washington , David Bour , Jacob Grayson , Sandeep Nijhawan , Ronald Stevens
IPC分类号： B05C11/00
CPC分类号： H01L21/67115 , C23C16/303 , C23C16/46 , C23C16/481 , C23C16/52 , C23C16/54 , H01L21/0254 , H01L21/0262 , H01L21/67207
摘要： A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.
摘要翻译：提供了一种用于监测和控制利用化学气相沉积和/或氢化物气相外延（HVPE）沉积的簇工具的衬底处理参数的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺将III族氮化物膜沉积在处理室内的多个衬底上。闭环控制系统对III族氮化物膜生长速率进行原位监测，并根据需要调整膜生长参数以维持目标生长速率。在另一个实施例中，闭环控制系统执行用于一个或多个成膜系统的多个处理室的膜生长参数的原位监测。

19. 发明申请

US20110079251A1 METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS 审中-公开
标题翻译：沉积物系统的现场清洁方法
公开(公告)号：US20110079251A1
公开(公告)日：2011-04-07
申请号：US12749087
申请日：2010-03-29
申请人： Olga Kryliouk , Jie Su , Kevin Griffin , Sandeep Nijhawan
发明人： Olga Kryliouk , Jie Su , Kevin Griffin , Sandeep Nijhawan
IPC分类号： B08B5/00
CPC分类号： C23C16/4405
摘要： A method for in-situ cleaning of a deposition system is disclosed. The method includes providing a deposition system with portions of the deposition system deposited with at least a group III element or a compound of a group III element. Halogen containing fluid is introduced into the deposition system. The halogen containing fluid is permitted to react with the group III element to form a halide. The halide in solid state is converted to a gaseous state. The halide in gaseous state is purged out of the deposition system.
摘要翻译：公开了一种用于原位清洗沉积系统的方法。该方法包括为沉积系统提供沉积有至少III族元素或III族元素的化合物的沉积系统的部分。将含卤素的流体引入沉积系统。允许含卤素的流体与III族元素反应形成卤化物。固态卤化物转化为气态。气态卤化物从沉积系统中排出。

20. 发明申请

US20080124463A1 SYSTEM AND METHOD FOR DEPOSITING A GASEOUS MIXTURE ONTO A SUBSTRATE SURFACE USING A SHOWERHEAD APPARATUS 失效
标题翻译：使用淋浴器将气体混合物沉积在基底表面上的系统和方法
公开(公告)号：US20080124463A1
公开(公告)日：2008-05-29
申请号：US11564198
申请日：2006-11-28
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi O. Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi O. Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

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