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11. 发明专利

JP2011171543A Deposition apparatus and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2011171543A
公开(公告)日：2011-09-01
申请号：JP2010034496
申请日：2010-02-19
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C23C16/4557
摘要： PROBLEM TO BE SOLVED: To provide a thermal CVD apparatus causing a high temperature such as epitaxial growth of an SiC film, wherein an excessive increase in temperature of a heater is prevented to elaborately control the temperature of a film deposition substrate. SOLUTION: A film deposition apparatus 50 includes a chamber 1 including a supply section 4 of a process gas 25 on its upper part; a rotating susceptor 7 for placing a semiconductor substrate 6 on its lower part; a heater 8, disposed at the position of the lower surface side of the semiconductor substrate 6; and a cylindrical liner 2 for covering an inner wall. A resistance-heating type upper heater 35, which is divided into a plurality of resistance heaters 36, 37, 38 and arranged around the liner 2, is disposed between the inner wall upper part of the chamber 1 and the liner 2, and the heater 8 and the upper heater 35 are made to cooperate with one another in heating the semiconductor substrate 6. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种引起诸如外延生长SiC膜的高温的热CVD装置，其中防止加热器的温度过度升高以精细地控制成膜基板的温度。解决方案：成膜装置50包括：室1，其上部具有处理气体25的供给部4; 用于将半导体衬底6放置在其下部的旋转基座7; 加热器8，设置在半导体基板6的下表面侧的位置; 以及用于覆盖内壁的圆柱形衬垫2。分隔成多个电阻加热器36,37,38并布置在衬套2周围的电阻加热型上加热器35设置在腔室1的内壁上部和衬垫2之间，加热器 8和上加热器35在加热半导体基板6时彼此配合。（C）2011年，JPO和INPIT

12. 发明专利

JP2011040615A Apparatus and method for manufacturing semiconductor 有权
标题翻译：装置和制造半导体的方法
公开(公告)号：JP2011040615A
公开(公告)日：2011-02-24
申请号：JP2009187390
申请日：2009-08-12
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MORIYAMA YOSHIKAZU
IPC分类号： H01L21/205 , C23C16/455 , C23C16/46 , C23C16/509 , H01L21/31
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , C30B25/04 , C30B25/10 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/68785 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor, suppressing the contamination of a wafer and achieving high performance and reliability improvement of a semiconductor device. SOLUTION: The apparatus for manufacturing the semiconductor includes: a reactor furnace into which the wafer is introduced; a gas supply mechanism for supplying process gas to the reactor furnace; a gas ejection mechanism for ejecting gas from the reactor furnace; a wafer support member for placing the wafer; a heater having a heater element for heating the wafer to a predetermined temperature and a heater electrode part molded integrally with the heater element; an electrode component connected to the heater electrode part to apply voltage to the heater electrode part; a base for fixing the electrode component; and a rotational driving control mechanism for rotating the wafer. At least a portion of a connection part between the heater electrode part and the electrode component is disposed below the upper face of the base. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造半导体的装置和方法，抑制晶片的污染并实现半导体器件的高性能和可靠性改进。解决方案：用于制造半导体的装置包括：引入晶片的反应炉; 用于向反应炉提供处理气体的气体供给机构; 用于从反应炉排出气体的气体喷射机构; 用于放置晶片的晶片支撑构件; 加热器，其具有用于将晶片加热到预定温度的加热器元件和与加热器元件一体模制的加热器电极部分; 连接到所述加热器电极部分以向所述加热器电极部施加电压的电极部件; 用于固定电极部件的基座; 以及用于旋转晶片的旋转驱动控制机构。加热器电极部分和电极部件之间的连接部分的至少一部分设置在基部的上表面的下方。版权所有（C）2011，JPO＆INPIT

13. 发明专利

JP2010267782A Film deposition device 有权
标题翻译：电影沉积装置
公开(公告)号：JP2010267782A
公开(公告)日：2010-11-25
申请号：JP2009117631
申请日：2009-05-14
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： YAJIMA MASAMI , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a film deposition device forming a uniform thickness film on a large-sized substrate.
SOLUTION: The film deposition device 100 includes a chamber 103, a susceptor 102 supporting a silicon wafer 101 disposed in the chamber 103, a rotating section 104 which rotates the susceptor 102 and an upper part of which is covered with the susceptor 102 to form a P
2 region, a heater 120 heating the silicon wafer 101 via the susceptor 102, and a gas exhaust portion 125 exhausting gas in the chamber 103. A hydrogen gas supply pipe 130 supplying hydrogen gas is disposed in the P
2 region. A rotation barrel 104a constituting the rotating section 104 is constituted by combining a plurality of plate materials with one another in the form of a cylinder and gaps are formed between the plate materials at predetermined intervals.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供在大尺寸基板上形成均匀厚度膜的成膜装置。解决方案：成膜装置100包括室103，支撑设置在室103中的硅晶片101的基座102，旋转部104，其使基座102旋转，并且其上部被基座102覆盖形成P 2 区域，加热器120通过基座102加热硅晶片101，排气部分125排出室103中的气体。供给氢气的氢气供应管130是设置在P 2 区域中。构成旋转部104的旋转筒104a通过将多个板材彼此组合成圆柱体的形式而构成，并且以预定间隔在板材之间形成间隙。版权所有（C）2011，JPO＆INPIT

14. 发明专利

JP2009259989A Vapor deposition device and operation decision method of vapor deposition device 审中-公开
标题翻译：蒸气沉积装置的蒸发沉积装置和操作决定方法
公开(公告)号：JP2009259989A
公开(公告)日：2009-11-05
申请号：JP2008106298
申请日：2008-04-16
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition device and an operation decision method of the vapor deposition device, capable of reliably stopping the operation of the device when there is a problem in a sealing mechanism.
SOLUTION: After supplying a purge gas between a rotary ring and a sealing member, whether the supply pressure of the purge gas is within a reference range is discriminated (step 104). When the supply pressure is within the reference range, and the displacement amount of the sealing member displaced by the supply of the purge gas is within the reference range, the rotary drive of a rotary shaft by a motor is permitted, and the operation of the vapor deposition device is permitted.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种蒸镀装置的蒸镀装置和操作判定方法，能够在密封机构有问题时可靠地停止装置的动作。解决方案：在旋转环和密封构件之间供应吹扫气体之后，判断吹扫气体的供应压力是否在参考范围内（步骤104）。当供给压力在参考范围内时，通过供给吹扫气体而偏移的密封构件的位移量在参考范围内，允许通过电动机的旋转轴的旋转驱动，并且允许气相沉积装置。版权所有（C）2010，JPO＆INPIT

15. 发明专利

JP2009152521A Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的装置及制造半导体器件的方法
公开(公告)号：JP2009152521A
公开(公告)日：2009-07-09
申请号：JP2008075957
申请日：2008-03-24
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： YAJIMA MASAMI , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor device capable of achieving high productivity and performing uniform film formation on a wafer, and to provide a method for manufacturing the semiconductor device.
SOLUTION: The manufacturing apparatus for the semiconductor device includes: a reaction chamber 11 to which a wafer w is loaded; a gas supply port 12a disposed in an upper portion of the reaction chamber 11 for supplying first process gas including source gas; a first rectifying plate 14a for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port 13a disposed in a lower portion of the reaction chamber 11 for exhausting gas; a second gas exhaust port 13b disposed in the upper part of the reaction chamber 11 for exhausting gas; heaters 18a and 18b for heating the wafer w; a susceptor 17 for retaining the wafer w; and a rotation drive unit 16 for rotating the wafer w.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够实现高生产率并且在晶片上实现均匀成膜的半导体器件的制造装置，并提供一种半导体器件的制造方法。解决方案：半导体器件的制造装置包括：加载有晶片w的反应室11; 设置在反应室11的上部的供气口12a，用于供应包括源气体的第一处理气体; 第一整流板14a，用于在整流状态下将第一处理气体提供到晶片上; 设置在反应室11的下部以排出气体的第一排气口13a; 设置在反应室11的上部以排出气体的第二排气口13b; 用于加热晶片w的加热器18a和18b; 用于保持晶片w的基座17; 以及用于旋转晶片w的旋转驱动单元16。版权所有（C）2009，JPO＆INPIT

16. 发明专利

JP2009071018A Vapor deposition apparatus and exhaust method 审中-公开
标题翻译：蒸气沉积装置和排气方法
公开(公告)号：JP2009071018A
公开(公告)日：2009-04-02
申请号：JP2007237543
申请日：2007-09-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , KOBAYASHI TAKEHIKO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To suppress a nasty smell produced when doing maintenance such as cleaning of a reactor of a vapor deposition apparatus, etc.
SOLUTION: A vapor deposition apparatus 100 supplies a wafer 150 heated up to a predetermined temperature with a process gas having a silicon constituent to form a film onto the wafer 150 through vapor deposition, wherein it has a reactor 101, a process gas feed portion 103, a primary exhaust portion 120, and a bypass pipe 130 prepared by branching it from the primary exhaust portion 120 to exhaust air from the reactor 101. This can inhibit occurrence of a nasty smell since the air exhausted from within the reactor 101 at the time of maintenance and by-products deposited on the primary exhaust portion 120 are not allowed to bring into contact.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决方案：为了抑制在进行诸如清洗蒸镀装置的反应器等的维护时产生的讨厌的气味。解决方案：蒸镀装置100将加热至预定的晶片150 温度与具有硅成分的工艺气体通过气相沉积在薄膜150上形成膜，其中它具有反应器101，工艺气体供给部分103，初级排气部分120和通过分支制备的旁路管130 从主排气部分120排出来自反应器101的空气。这可以抑制由于在维护时从反应器101内部排出的空气和不允许沉积在主排气部分120上的副产物的空气而产生讨厌的气味联系。版权所有（C）2009，JPO＆INPIT

17. 发明专利

JP2009027021A Vapor-phase growing device and vapor-phase growing method 有权
标题翻译：蒸汽相生长装置和蒸汽相生长方法
公开(公告)号：JP2009027021A
公开(公告)日：2009-02-05
申请号：JP2007189735
申请日：2007-07-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： HIRATA HIRONOBU , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44 , C30B25/08 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase growing device, and a vapor-phase growing method, using the device provided with a liner for suppressing generation of by-products by gas, before and after the formation of a vapor-phase growing film. SOLUTION: The vapor-phase growing device 100 comprises a chamber 101, a gas supply part 102 for supplying process gas 110, and a gas exhaust part 108 for exhausting the gas from an inside of the chamber 101. The inner wall part 130 of the chamber 101 is structured so as to have different properties between an upper liner 131 and a lower liner 132, and the lower liner 132 is formed of a base material which easily absorb thermal energy and has a high heat-accumulating properties, as compared with the upper liner 130. Thus, generation of the by-products on the whole surface of the liner 130, caused by the process gas 110 and produced gas 112, can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供气相生长装置和气相生长方法，使用具有用于抑制由气体产生副产物的衬垫的装置，在形成蒸汽之前和之后相生长膜。气相生长装置100包括室101，用于供给处理气体110的气体供应部分102和用于从室101的内部排出气体的排气部分108.内壁部分室101的结构130在上衬垫131和下衬套132之间具有不同的性质，下衬套132由容易吸收热能并具有高蓄热特性的基材形成，如因此，可以抑制由处理气体110和产生的气体112引起的衬套130的整个表面上副产物的产生。版权所有（C）2009，JPO＆INPIT

18. 发明专利

JP2007073628A Method and device for manufacturing semiconductor 审中-公开
标题翻译：用于制造半导体的方法和装置
公开(公告)号：JP2007073628A
公开(公告)日：2007-03-22
申请号：JP2005256806
申请日：2005-09-05
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ARAI HIDEKI , SUZUKI KUNIHIKO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a semiconductor, capable of shortening a lead time by efficiently removing a film formed on a susceptor.
SOLUTION: The manufacturing device comprises: a film forming chamber 2 in which a susceptor 3 for holding a wafer 1 is installed for introducing a film forming gas to form a film; an etching chamber 4 that removes the film formed at the susceptor 3 at film forming; and a storage 5 that temporarily stores the susceptor 3 whose film has been removed. Thus, the film formed on the susceptor 3 is efficiently removed to shorten a lead time.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体制造方法和装置，其能够通过有效地去除形成在基座上的膜来缩短提前期。＆lt; P＆gt;解决方案：制造装置包括：成膜室2，其中安装有用于保持晶片1的基座3，用于引入成膜气体以形成膜; 蚀刻室4，其在成膜时去除在基座3处形成的膜; 以及临时存储已经去除了胶片的基座3的存储器5。因此，有效地移除形成在基座3上的薄膜以缩短交货时间。版权所有（C）2007，JPO＆INPIT

19. 发明专利

JP2013098340A Deposition apparatus and deposition method 审中-公开
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013098340A
公开(公告)日：2013-05-20
申请号：JP2011239707
申请日：2011-10-31
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/46 , C30B25/12
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method, which can uniform a temperature distribution in a circumferential direction of a substrate.SOLUTION: A deposition apparatus 100 comprises: a chamber 1 to which a reaction gas 4 is supplied and in which a deposition process is performed; a susceptor 8 arranged in the camber 1 and on which a substrate 7 is placed; and a heater 9 for heating the susceptor 8 from under. The susceptor 8 has a ring-shaped first susceptor part 8a and a second susceptor part 8b provided in contact with the first susceptor part 8a and shielding an opening of the first susceptor 8a. A surface of the second susceptor part 8b which faces a heating part slants from a horizontal plane. The first susceptor part 8a has different shapes in a circumferential direction corresponding to thicknesses of the second susceptor part 8b.
摘要翻译：要解决的问题：提供一种能够使基板周向的温度分布均匀的沉积设备和沉积方法。解决方案：沉积设备100包括：供应反应气体4并进行沉积处理的室1; 布置在外倾角1中并且放置有基底7的基座8; 以及用于从下方加热基座8的加热器9。基座8具有与第一基座部8a接触并且屏蔽第一基座8a的开口的环状的第一基座部8a和第二基座部8b。面对加热部的第二基座部8b的表面从水平面倾斜。第一基座部8a在与第二基座部8b的厚度对应的圆周方向上具有不同的形状。版权所有（C）2013，JPO＆INPIT

20. 发明专利

JP2013084943A Deposition device and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013084943A
公开(公告)日：2013-05-09
申请号：JP2012211863
申请日：2012-09-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/44 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a deposition device and a deposition method which can place a substrate on a susceptor at a predetermined position regardless of a temperature difference between a transfer chamber and a chamber.SOLUTION: A deposition method comprises: transferring a substrate by a robot hand to the inside of a chamber (S101) and passing the substrate to a substrate support part (S102); descending the substrate support part and placing the substrate on a susceptor (S103); measuring a temperature of the substrate while rotating the substrate (S104); creating temperature data and position data by using a measurement result by a radiation thermometer and a detection result by an encoder (S105); calculating a displacement amount of the substrate based on the temperature data and the position data (S106) and determining whether the displacement amount is less than or equal to a permissible value (S107); and when the displacement amount is larger than the permissible value, adjusting a position of the robot hand in the transfer chamber (S108) and subsequently, transferring a next to-be-deposited substrate to the inside of the chamber and placing the substrate on the susceptor through the substrate support part (S109).
摘要翻译：要解决的问题：提供一种能够将基板放置在基座上的预定位置上的沉积装置和沉积方法，而与传送室和室之间的温度差无关。解决方案：沉积方法包括：通过机器人手将基板转移到室的内部（S101），并将基板传送到基板支撑部（S102）; 下降基板支撑部分并将基板放置在基座上（S103）; 在旋转衬底的同时测量衬底的温度（S104）; 通过辐射温度计的测量结果和编码器的检测结果产生温度数据和位置数据（S105）; 基于温度数据和位置数据计算基板的位移量（S106），并确定位移量是否小于或等于容许值（S107）; 并且当所述位移量大于所述允许值时，调整所述传送室中的机器人手的位置（S108），并且随后将下一个待沉积的基板转移到所述室的内部并将所述基板放置在基座支撑部（S109）。版权所有（C）2013，JPO＆INPIT

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