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11. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

12. 发明授权

US5022037A Semiconductor laser device 失效
公开(公告)号：US5022037A
公开(公告)日：1991-06-04
申请号：US489180
申请日：1990-03-08
申请人： Hidenori Kawanishi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa , Nobuyuki Miyauchi , Seiki Yano
发明人： Hidenori Kawanishi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa , Nobuyuki Miyauchi , Seiki Yano
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/16
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/164 , H01S5/166
摘要： A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an active layer for laser oscillation, and a pair of cleavage planes on the side of the multi-layered structure, wherein a graded-band-gap layer is formed on at least one of the cleavage planes, the graded-band-gap layer having a forbidden band gap which increases gradually with an increase in the distance from the cleavage plane, and the surface of the graded-band-gap layer constituting the end facet.

13. 发明授权

US4806778A Micro-displacement measuring apparatus using a semiconductor laser 失效
标题翻译：使用半导体激光器的微位移测量装置
公开(公告)号：US4806778A
公开(公告)日：1989-02-21
申请号：US832885
申请日：1986-02-26
申请人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
发明人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
IPC分类号： G01D5/30 , G01B9/02 , G01B11/00 , G01D5/26 , H01S3/08
CPC分类号： G01D5/26
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the semiconductor laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser, wherein the relationship between the reflectivity R.sub.f at the front facet of the semiconductor laser from which a laser light irradiates the object, and the reflectivity Rr at the rear facet of the semiconductor laser which is opposite the front facet is as follows: 0.1
摘要翻译：使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自所述半导体激光器的光的光检测器。复合谐振器系统被构造成使得来自半导体激光器的光照射被测量物体并且其反射光返回到半导体激光器，其中激光器的半导体激光器的前面的反射率Rf之间的关系光照射物体，与前面相反的半导体激光器的后面的反射率Rr如下：0.1

14. 发明授权

US4655597A Micro-displacement measuring apparatus using a semiconductor laser 失效
标题翻译：使用半导体激光器的微位移测量装置
公开(公告)号：US4655597A
公开(公告)日：1987-04-07
申请号：US739013
申请日：1985-05-29
申请人： Osamu Yamamoto , Sadayoshi Matsui , Haruhisa Takiguchi , Hiroshi Hayashi , Nobuyuki Miyauchi
发明人： Osamu Yamamoto , Sadayoshi Matsui , Haruhisa Takiguchi , Hiroshi Hayashi , Nobuyuki Miyauchi
IPC分类号： G01S17/08 , G01B11/00 , G01D5/26 , H01S5/14
CPC分类号： G01D5/26 , H01S5/14
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving the light from the semiconductor laser, and with the compound resonator system being constructed such that light from said laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser. The light detector detects and measures the number of fluctuations and the level of the optical output of the laser to determine the displacement of the object and of the direction of the displacement of the object, respectively.
摘要翻译：使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自半导体激光器的光的光检测器，并且复合谐振器系统被构造成使得来自所述激光的光照射物体并且其反射的光返回到半导体激光器。光检测器检测并测量激光的光学输出的波动数量和电平，以分别确定物体的位移和物体的位移方向。

15. 发明授权

US4792962A A ring-shaped resonator type semiconductor laser device 失效
标题翻译：环形谐振器型半导体激光器件
公开(公告)号：US4792962A
公开(公告)日：1988-12-20
申请号：US910529
申请日：1986-09-23
申请人： Nobuyuki Miyauchi , Hiroshi Hayashi , Osamu Yamamoto , Saburo Yamamoto
发明人： Nobuyuki Miyauchi , Hiroshi Hayashi , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S3/083 , H01S5/10 , H01S3/19
CPC分类号： H01S3/083 , H01S5/10 , H01S5/1071
摘要： A semiconductor laser device comprising: a ring-shaped resonator constituted by a square-shaped optical waveguide composed of four straight optical waveguide sides in which facing sides are positioned in a parallel manner and a reflecting mirror is formed at each of the four corners of said square-shaped optical waveguide in a manner to divide the intersection angle of two each of said four sides at each of said four corners into two equal parts, and a means, for releasing laser light from said ring-shaped resonator, which is disposed on or near a part or the whole area of at least one of said four sides of said square-shaped optical waveguide.
摘要翻译：一种半导体激光器件，包括：环形谐振器，由由四个直的光波导侧构成的方形光波导构成，其中相对的侧面以平行的方式定位，并且在所述的四个角中的每一个处形成反射镜以将所述四个角中的每一个的所述四个侧面中的两个的两个角度的交叉角分成两个相等的方式的方形光波导，以及用于将所述环形谐振器的激光释放的装置，或者在所述方形光波导的所述四个侧面中的至少一个的一部分或整个区域附近。

16. 发明授权

US4951291A Semiconductor laser device with a protective film on the facets 失效
标题翻译：具有保护膜的半导体激光器件
公开(公告)号：US4951291A
公开(公告)日：1990-08-21
申请号：US336649
申请日：1989-04-07
申请人： Nobuyuki Miyauchi , Hiroshi Hayashi , Saburo Yamamoto
发明人： Nobuyuki Miyauchi , Hiroshi Hayashi , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/028
CPC分类号： H01S5/028
摘要： A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a dielectric film of high refractive index, said multi-layered dielectric film which covers at least one of the facets therewith being a light-permeable film with a reflectivity of 30% or less.
摘要翻译：一种在面上具有保护膜的半导体激光器件，其中所述保护膜由由至少两种电介质膜组成的交替层组成的多层电介质膜制成，其中一层是低折射率的第一介电膜指数，另一个是高折射率的电介质膜，所述多层电介质膜覆盖其中至少一个面是具有30％或更小反射率的透光膜。

17. 发明授权

US5220571A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5220571A
公开(公告)日：1993-06-15
申请号：US850670
申请日：1992-03-13
申请人： Nobuyuki Miyauchi
发明人： Nobuyuki Miyauchi
IPC分类号： H01L25/16 , H01L33/48 , H01S3/10 , H01S5/00
CPC分类号： H01S3/10
摘要： A semiconductor laser device comprising a semiconductor laser chip emitting infrared laser beams in a predetermined direction and a visible light source emitting visible light beams in the same direction. The semiconductor laser chip and the visible light source are disposed close to each other on a package stem. An optical element is disposed in a direction where both light beams are emitted so as to collimate or converge the visible light beams while allowing the infrared laser beams to pass therethrough without change. By this configuration, the operator can visually locate the infrared laser beams by knowing the location of the visible light beams.
摘要翻译：一种半导体激光装置，包括：沿预定方向发射红外激光束的半导体激光器芯片和沿相同方向发射可见光束的可见光源。半导体激光芯片和可见光源在封装杆上彼此靠近设置。沿两个光束发射的方向设置光学元件，以使可见光束准直或会聚，同时允许红外激光束通过而不改变。通过这种配置，操作者可以通过了解可见光束的位置来可视地定位红外激光束。

18. 发明授权

US4637029A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4637029A
公开(公告)日：1987-01-13
申请号：US633990
申请日：1984-07-24
申请人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
发明人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
IPC分类号： H01S5/00 , H01L29/205 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01L29/205 , H01S5/3201
摘要： A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the second cladding layer. The AlAs mole fraction (z) of the substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness.
摘要翻译： GaAlAs半导体激光元件包括被第一和第二Ga1-yAlyAs包覆层夹持的Ga1-xAlxAs有源层。 Ga 1-z Al z As衬底层支撑第一覆层，Ga1-zAlzAs覆盖层覆盖第二覆层。选择衬底层和覆盖层的AlAs摩尔分数（z）略小于活性层的AlAs摩尔分数（x）。此外，有源层位于激光元件中，使得有源层与安装表面分离超过激光元件厚度的35％，并且从相对表面分离超过激光元件厚度的18％。

19. 发明授权

US4569721A Method for the production of semiconductor lasers 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US4569721A
公开(公告)日：1986-02-11
申请号：US644437
申请日：1984-08-27
申请人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
发明人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
IPC分类号： H01S5/00 , H01S5/223 , H01S5/34 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/34 , H01S5/2235
摘要： A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
摘要翻译：一种制造半导体激光器的方法，包括：（a）在其表面上形成具有条纹部分的基底，所述条纹部分形成台面，（b）在所述条纹部分和剩余部分中形成电流阻挡层（c）仅在所述条纹部分上消除所述电流阻挡层，从而允许电流流过基板，并将所述条纹部分整体形成为平台或槽，以及（d）依次层压晶体在基板的整个表面上激光操作的生长层严格地与所述基板的表面上的所述台面或凹槽相一致，从而实现激光振荡的横向模式的稳定。

20. 发明授权

US5557116A Semiconductor laser device and resin layer 失效
标题翻译：半导体激光器件和树脂层
公开(公告)号：US5557116A
公开(公告)日：1996-09-17
申请号：US178399
申请日：1993-12-22
申请人： Katsushige Masui , Nobuyuki Miyauchi , Zenpei Tani , Hiroshi Chikugawa , Makoto Tsuji , Masaru Ogawa , Takehiro Shiomoto
发明人： Katsushige Masui , Nobuyuki Miyauchi , Zenpei Tani , Hiroshi Chikugawa , Makoto Tsuji , Masaru Ogawa , Takehiro Shiomoto
IPC分类号： H01S5/022 , H01L33/00 , H01S3/18
CPC分类号： H01S5/02244 , H01L24/97 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01S2301/176 , H01S5/02228 , H01S5/0683
摘要： A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.
摘要翻译：半导体激光装置包括基底，半导体激光芯片和包围激光芯片的树脂层。基座可以在激光芯片附近具有安装在其上的监视器光电二极管。封装激光芯片或激光芯片和监视二极管芯片两者的树脂层由厚度不大于500μm的单一合成树脂制成，并且还具有基本上平行于向外定向的光束发射端面的表面激光芯片。

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