专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5714006A Method of growing compound semiconductor layer 失效
标题翻译：生长化合物半导体层的方法
公开(公告)号：US5714006A
公开(公告)日：1998-02-03
申请号：US572883
申请日：1995-12-18
申请人： Hirotaka Kizuki , Yasutomo Kajikawa
发明人： Hirotaka Kizuki , Yasutomo Kajikawa
IPC分类号： C30B29/38 , C30B29/48 , H01L21/20 , H01L21/203 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/00 , H01S5/323 , C30B25/09
CPC分类号： H01L33/007 , H01L21/02411 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10S117/901
摘要： A method of growing a compound semiconductor layer includes epitaxially growing a III-V compound semiconductor layer including nitrogen (N) for as the Group V element on a front surface of a semiconductor substrate of cadmium telluride (CdTe). Therefore, the atoms of the crystal lattice of the III-V compound semiconductor layer are periodically lattice-matched with the atoms of the crystal lattice of the CdTe semiconductor substrate, whereby the III-V compound semiconductor layer is epitaxially grown with high crystalline quality.
摘要翻译：生长化合物半导体层的方法包括在碲化镉（CdTe）的半导体衬底的前表面上外延生长包含作为V族元素的氮（N）的III-V族化合物半导体层。因此，III-V族化合物半导体层的晶格的原子与CdTe半导体衬底的晶格的原子周期性地晶格匹配，由此III-V族化合物半导体层以高结晶质量外延生长。

12. 发明授权

US5541950A Semiconductor laser including groove having variable dimensions 失效
标题翻译：半导体激光器包括具有可变尺寸的凹槽
公开(公告)号：US5541950A
公开(公告)日：1996-07-30
申请号：US392268
申请日：1995-02-22
申请人： Hirotaka Kizuki , Shoichi Karakida
发明人： Hirotaka Kizuki , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/223 , H01S5/24 , H01S5/40 , H01S3/18
CPC分类号： H01S5/164 , H01S5/2231 , H01S5/4031 , H01S5/0202 , H01S5/106 , H01S5/168 , H01S5/24
摘要： A semiconductor laser including a semiconductor substrate of a first conductivity type; a semiconductor multilayer structure disposed on the substrate and including a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type, opposite the first conductivity type, and a current blocking layer of the first conductivity type; a laser light emitting facet; a stripe-shaped V groove extending in a resonator length direction transverse to the laser light emitting facet and penetrating in a depth direction into a part of the semiconductor multilayer structure, including into the second cladding layer, the stripe-shaped V groove having a width transverse to the resonator length direction and the depth direction wherein at least one of the depth and width of the stripe-shaped V groove has a first dimension adjacent the laser light emitting facet and a second dimension, different from the first dimension, within the semiconductor laser spaced from the laser light emitting facet; and a semiconductor layer of the second conductivity type disposed in and filling the stripe-shaped V groove.
摘要翻译：一种半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，其设置在所述基板上，并且包括第一导电类型的第一包层，与所述第一导电类型相反的第二导电类型的有源层，第二包覆层和所述第一导电类型的电流阻挡层 ; 激光发射面; 所述条状V槽沿垂直于所述激光发射小面的谐振器长度方向延伸并且沿深度方向穿入所述半导体多层结构的一部分，所述半导体多层结构包括在所述第二覆层中，所述条形V沟槽具有宽度横向于谐振器长度方向和深度方向，其中条形V沟槽的深度和宽度中的至少一个具有邻近激光发射小面的第一尺寸和不同于第一尺寸的半导体内部的第二尺寸与激光发射面分开的激光; 以及设置在所述条形V槽中并填充所述条形V槽的所述第二导电类型的半导体层。

13. 发明授权

US5539763A Semiconductor lasers and methods for fabricating semiconductor lasers 失效
标题翻译：半导体激光器和制造半导体激光器的方法
公开(公告)号：US5539763A
公开(公告)日：1996-07-23
申请号：US302488
申请日：1994-09-12
申请人： Masayoshi Takemi , Hirotaka Kizuki
发明人： Masayoshi Takemi , Hirotaka Kizuki
IPC分类号： H01S5/00 , B82Y20/00 , G02B6/12 , G02B6/124 , H01L27/15 , H01S5/026 , H01S5/06 , H01S3/18
CPC分类号： G02B6/124 , H01L27/15 , H01L33/0062 , H01S5/0265 , G02B2006/12128
摘要： An integrated semiconductor laser and light modulator includes a semiconductor laser disposed at a first region on a semiconductor substrate, a light modulator of an electric field absorbing type disposed at a second region on the semiconductor substrate adjacent to the first region for outputting a modulated light by transmitting or absorbing the laser light generated in the semiconductor laser, a semiconductor laminated layer structure including a quantum well structure layer disposed in the first region and the second region on the semiconductor substrate, and a lattice mismatched layer having a lattice constant smaller than that of the semiconductor substrate, disposed on a part of the semiconductor laminated layer structure, in the second region. It is possible to enhance the transmission efficiency of the laser light to the light modulator and the quality of the active layer of the semiconductor laser and the light absorption layer of the light modulator. Thus, an integrated semiconductor laser and light modulator that has a high reliability and long lifetime is obtained.
摘要翻译：集成半导体激光器和光调制器包括设置在半导体衬底上的第一区域的半导体激光器，设置在与第一区域相邻的半导体衬底上的第二区域处的电场吸收型光调制器，用于通过透射或吸收在半导体激光器中产生的激光，包括设置在半导体衬底的第一区域和第二区域中的量子阱结构层的半导体层叠层结构，以及晶格常数小于设置在半导体叠层结构的一部分上的半导体衬底在第二区域中。可以提高激光对光调制器的传输效率以及半导体激光器的有源层和光调制器的光吸收层的质量。因此，获得了具有高可靠性和长寿命的集成半导体激光器和光调制器。

14. 发明授权

US07307490B2 High frequency switch device 有权
标题翻译：高频开关装置
公开(公告)号：US07307490B2
公开(公告)日：2007-12-11
申请号：US10957651
申请日：2004-10-05
申请人： Hirotaka Kizuki , Noriyuki Tanino , Junichi Somei
发明人： Hirotaka Kizuki , Noriyuki Tanino , Junichi Somei
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H03K17/693 , H01P1/15
摘要： A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).
摘要翻译：高频开关装置具有SPDT（A），SPDT（B）和SPDT（C）开关，每个开关具有一个极和第一端口和第二端口，其中SPDT（A）的第二端口经由终端电阻和SPDT（B）的第二个端口分别通过终端电阻接地，SPDT（A）的第一个端口和SPDT（B）的第一个端口分别连接到第一个端口和 SPDT（C）的第二个港口。

15. 发明申请

US20050077978A1 High frequency switch device 有权
标题翻译：高频开关装置
公开(公告)号：US20050077978A1
公开(公告)日：2005-04-14
申请号：US10957651
申请日：2004-10-05
申请人： Hirotaka Kizuki , Noriyuki Tanino , Junichi Somei
发明人： Hirotaka Kizuki , Noriyuki Tanino , Junichi Somei
IPC分类号： H01P1/15 , H03K17/00 , H03K17/693 , H04B1/18
CPC分类号： H03K17/693 , H01P1/15
摘要： A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).
摘要翻译：高频开关装置具有SPDT（A），SPDT（B）和SPDT（C）开关，每个开关具有一个极和第一端口和第二端口，其中SPDT（A）的第二端口经由终端电阻和SPDT（B）的第二个端口分别通过终端电阻接地，SPDT（A）的第一个端口和SPDT（B）的第一个端口分别连接到第一个端口和 SPDT（C）的第二个港口。

16. 发明授权

US06506618B1 Method of forming a GaInNAs layer 失效
标题翻译：形成GaInNA层的方法
公开(公告)号：US06506618B1
公开(公告)日：2003-01-14
申请号：US10150008
申请日：2002-05-20
申请人： Hirotaka Kizuki , Yasutomo Kajikawa
发明人： Hirotaka Kizuki , Yasutomo Kajikawa
IPC分类号： H01L2120
CPC分类号： C30B23/02 , C30B29/40 , H01L21/02392 , H01L21/02395 , H01L21/02458 , H01L21/02463 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02546 , H01L21/02658 , Y10S438/93
摘要： An undoped GaAs layer is formed on a GaAs substrate. Thallium is adhered to the undoped GaAs layer to a thickness of at least one atomic layer. After adhesion of thallium, GaInNAs is epitaxially grown on the undoped GaAs layer by chemical vapor deposition.
摘要翻译：在GaAs衬底上形成未掺杂的GaAs层。铊附着到未掺杂的GaAs层至至少一个原子层的厚度。在铊附着后，GaInNAs通过化学气相沉积在未掺杂的GaAs层上外延生长。

17. 发明授权

US6096617A Method of manufacturing a carbon-doped compound semiconductor layer 失效
标题翻译：碳掺杂化合物半导体层的制造方法
公开(公告)号：US6096617A
公开(公告)日：2000-08-01
申请号：US685061
申请日：1996-07-22
申请人： Hirotaka Kizuki
发明人： Hirotaka Kizuki
IPC分类号： H01L21/205 , H01L33/14 , H01L33/30 , H01S5/00 , H01L21/331
CPC分类号： H01L21/0262 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , Y10S438/925
摘要： A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound semiconductor layer, including the carbon-doped compound semiconductor layer, to a predetermined temperature under an atmosphere comprising an alkylarsine, thereby avoiding the formation of free atomic hydrogen and preventing hydrogen contamination of the C-doped compound semiconductor layer. As a result, the amount of coupling between hydrogen and carbon in the carbon-doped compound semiconductor layer is significantly reduced, thereby preventing lowering of the carbon carrier concentration. The present method enables formation of a C-doped GaAs base layer without deterioration of electrical characteristics, and formation of a laser having a second clad layer of C-doped compound semiconductor layer with improved reliability.
摘要翻译：通过在化合物半导体基板上以预定的生长温度形成碳掺杂化合物半导体器件，使包含碳掺杂化合物半导体层的化合物半导体层的生长停止并使其生长温度变化，来制造化合物半导体器件，形成为在包含烷基胂的气氛下的预定温度，从而避免形成游离原子氢并防止C掺杂化合物半导体层的氢污染。结果，碳掺杂化合物半导体层中的氢和碳之间的偶合量显着降低，从而防止碳载体浓度的降低。本方法能够形成C掺杂的GaAs基底层，而不会劣化电气特性，并且形成具有提高的可靠性的具有C掺杂化合物半导体层的第二覆盖层的激光器。

18. 发明授权

US5459747A Semiconductor optical devices 失效
标题翻译：半导体光学器件
公开(公告)号：US5459747A
公开(公告)日：1995-10-17
申请号：US260368
申请日：1994-06-14
申请人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
发明人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/106 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2272 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs, during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
摘要翻译：半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的交替布置的第二半导体层，其中几乎不发生质量传输，在其它半导体层和与第三半导体材料不同的半导体材料的第三半导体层的生长期间第二半导体层的材料。该器件包括埋入衍射光栅的第四半导体层。在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

19. 发明授权

US5991322A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5991322A
公开(公告)日：1999-11-23
申请号：US505761
申请日：1995-07-21
申请人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
发明人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2272 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
摘要翻译：半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的第二半导体层，其中在其它半导体层和不同于材料的半导体材料的第三半导体层的生长期间几乎不发生质量传输的第二半导体层。该器件包括埋入衍射光栅的第四半导体层。在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

20. 发明授权

US5882952A Semiconductor device including quantum wells or quantum wires and method of making semiconductor device 失效
标题翻译：包括量子阱或量子线的半导体器件和制造半导体器件的方法
公开(公告)号：US5882952A
公开(公告)日：1999-03-16
申请号：US895824
申请日：1997-07-17
申请人： Hirotaka Kizuki , Motoharu Miyashita
发明人： Hirotaka Kizuki , Motoharu Miyashita
IPC分类号： H01L21/302 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01L21/20 , H01L21/205 , H01L29/04 , H01L29/06 , H01L29/12 , H01L29/205 , H01L29/778 , H01S5/00 , H01S5/34
CPC分类号： H01L29/778 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/0243 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L29/045 , H01L29/125 , H01L29/205 , H01L33/06 , H01L33/16 , H01S5/341 , Y10S438/962 , Y10S977/76 , Y10S977/763 , Y10S977/953
摘要： A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the �001! direction or the �111! direction; and growing at least one double heterostructure including a first compound semiconductor and a second compound semiconductor having a smaller band gap than the first compound semiconductor to form quantum wires of the second compound semiconductor at edges of the multiatomic steps. Multiatomic steps having step edges along the longitudinal direction of the wire have improved linearity, and thus, quantum wires can be fabricated with improved controllability.
摘要翻译：一种制造半导体器件的方法包括：在（110）半导体衬底上通过MOCVD形成多原子步骤，该半导体衬底以[00 + E，ov1 + EE]方向倾斜，或[1 + E，ovs 11 + EE] 方向; 以及生长至少一个双异质结构，其包括具有比所述第一化合物半导体更小的带隙的第一化合物半导体和第二化合物半导体，以在所述多原子台阶的边缘处形成所述第二化合物半导体的量子线。具有沿着导线的纵向方向的台阶边缘的多原子台阶具有改善的线性度，因此能够以改进的可控性制造量子线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式