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11. 发明授权

US06961997B2 Fracture split method for connecting rod 有权
标题翻译：连杆断裂分裂法
公开(公告)号：US06961997B2
公开(公告)日：2005-11-08
申请号：US10622100
申请日：2003-07-16
申请人： Tsuyoshi Kubota , Shinya Iwasaki , Tsuneo Isobe
发明人： Tsuyoshi Kubota , Shinya Iwasaki , Tsuneo Isobe
IPC分类号： F16C7/02 , C23C8/20 , F16C9/04 , B21D53/84 , B23P17/00
CPC分类号： F16C9/045 , Y10T29/49286 , Y10T29/49288 , Y10T29/4979
摘要： A connecting rod is formed using a method that includes providing a connecting rod blank. The connecting rod blank has a rod section disposed between a big end and a small end. The big end has a first hole generally sized to receive a crankpin of a crankshaft and at least one second hole generally sized to receive a bolt, wherein the axes of the first and second holes are generally normal to each other. The big end of the connecting rod has a dividing plane that extends through both the first and second holes. The connecting rod blank is processed by hardening at least the big end to a sufficient depth such that a first region of the big end lying between the first and second holes at the dividing plane is hardened, while leaving a substantial second region of the big end at the dividing plane generally unhardened. The connecting rod blank is further processed by splitting the big end along the dividing plane to produce a rod part fracture surface and a cap part fracture surface.
摘要翻译：使用包括提供连杆坯件的方法形成连杆。连杆坯件具有设置在大端和小端之间的杆部。大端具有通常尺寸适于容纳曲轴的曲柄销的第一孔，以及通常尺寸设置成容纳螺栓的至少一个第二孔，其中第一孔和第二孔的轴线大体上彼此正交。连杆的大端具有延伸穿过第一孔和第二孔的分隔平面。连杆坯料通过将至少大端硬化至足够的深度进行加工，使得位于分割平面处的第一和第二孔之间的大端的第一区域硬化，同时留下大端的实质的第二区域在分界线上一般没有硬化。通过沿分割平面分割大端进一步处理连杆坯料，以产生杆部断裂面和帽部断裂面。

12. 发明申请

US20050126660A1 Connecting rod split construction 审中-公开
标题翻译：连杆分体结构
公开(公告)号：US20050126660A1
公开(公告)日：2005-06-16
申请号：US10500915
申请日：2003-07-10
申请人： Tsuyoshi Kubota , Shinya Iwasaki
发明人： Tsuyoshi Kubota , Shinya Iwasaki
IPC分类号： F16C7/02 , F16C9/04 , C23C8/22
CPC分类号： F16C7/023 , F16C9/045
摘要： A breaking and splitting structure of a connecting rod has a large end having a crank pin bore including a surface-hardened surface. The large end is broken and split into a rod section and a cap section, and the rod and cap sections are coupled with fastening bolts, with their broken and split surfaces engaged and aligned with each other. A breakage-starting portion extends in the axial direction of the crank pin bore and is formed in an inside circumferential surface of the crank pin bore of the large end. An axial length of the breakage-starting portion is smaller than the axial length of the inside circumferential surface.
摘要翻译：连杆的断裂和分裂结构具有大的端部，其具有包括表面硬化表面的曲柄销孔。大端被破碎并分成杆部分和帽部分，杆和帽部分与紧固螺栓联接，其破裂和分裂的表面彼此接合并对准。破坏起始部分在曲柄销孔的轴向方向上延伸并且形成在大端的曲柄销孔的内周表面中。断裂起始部的轴向长度小于内周面的轴向长度。

13. 发明授权

US09633997B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US09633997B2
公开(公告)日：2017-04-25
申请号：US15114201
申请日：2014-09-08
申请人： Satoru Kameyama , Shinya Iwasaki , Yuki Horiuchi , Shuhei Oki
发明人： Satoru Kameyama , Shinya Iwasaki , Yuki Horiuchi , Shuhei Oki
IPC分类号： H01L29/76 , H01L27/06 , H01L21/02 , H01L21/8222 , H01L21/265 , H01L21/324 , H01L29/10 , H01L29/06 , H01L29/739 , H01L29/861 , H01L29/08 , H01L21/425
CPC分类号： H01L27/0664 , H01L21/02675 , H01L21/265 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/425 , H01L21/8222 , H01L27/0629 , H01L29/0684 , H01L29/0821 , H01L29/0839 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L29/78 , H01L29/8611
摘要： A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance “a” from the surface to the depth having the local maximum value N1 is larger than twice a distance “b” from the depth having the local maximum value N1 to the depth having the local minimum N2.

14. 发明授权

US09337058B2 Method for reducing nonuniformity of forward voltage of semiconductor wafer 有权
标题翻译：降低半导体晶片正向电压不均匀的方法
公开(公告)号：US09337058B2
公开(公告)日：2016-05-10
申请号：US14769011
申请日：2013-03-06
申请人： Shinya Iwasaki
发明人： Shinya Iwasaki
IPC分类号： H01L21/26 , H01L21/42 , H01L21/322 , H01L29/36 , H01L29/66 , H01L21/263 , H01L21/265 , H01L29/32
CPC分类号： H01L21/322 , H01L21/263 , H01L21/265 , H01L21/26506 , H01L21/266 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/868
摘要： There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer.
摘要翻译：提供了一种降低N型半导体晶片的正向电压Vf的不均匀性的方法，其中包括在N层中的杂质的密度在半导体晶片的平面图中不均匀地分布。该方法通过向N型半导体晶片照射带电粒子，并且在N层中产生缺陷以减小正向电压的不均匀性，从而降低正向电压的不均匀性。在该方法的一个方面，照射带电粒子，使得深度方向上的到达位置或照射密度可以根据半导体晶片的平面图中的N层中的杂质的密度而不同。

15. 发明授权

US08742454B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08742454B2
公开(公告)日：2014-06-03
申请号：US13738292
申请日：2013-01-10
申请人： Shinya Iwasaki
发明人： Shinya Iwasaki
IPC分类号： H01L27/06
CPC分类号： H01L29/7393 , H01L29/0834 , H01L29/407 , H01L29/456 , H01L29/66348 , H01L29/7397
摘要： In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.
摘要翻译：在形成有二极管和IGBT的半导体衬底的半导体器件中，二极管的阴极区域和IGBT的集电极区域形成在暴露于半导体衬底的一个表面的范围内。在表面上形成与阴极区域接触的第一导体层和与集电极区域接触的第二导体层。第二导体层的功函数大于第一导体层的功函数。

16. 发明申请

US20070131358A1 Shutter curtain lifting prevention structure in shutter device 审中-公开
标题翻译：快门装置中的快门帘提升防止结构
公开(公告)号：US20070131358A1
公开(公告)日：2007-06-14
申请号：US10577817
申请日：2004-09-28
申请人： Shinya Iwasaki , Naoki Yokoi , Takanobu Kuribayashi , Mitsuhiro Yoshida
发明人： Shinya Iwasaki , Naoki Yokoi , Takanobu Kuribayashi , Mitsuhiro Yoshida
IPC分类号： E06B9/08
CPC分类号： E06B9/86 , E06B9/58 , E06B9/80 , E06B2009/805
摘要： A shutter curtain lifting prevention structure comprises a shutter curtain formed by connecting a plurality of slats via an interlock portion in the vertical direction, guide rails standing on both sides of an opening of the construction, and a cutout recess being integrally formed at the guide groove of each guide rail. The cutout recess is formed by horizontally cutting out the interior side plane portion of the front face located above and in the vicinity of the floor surface, such that when a bottom plate of the shutter curtain kept in a shut state is lifted, a connection portion of the bottom plate and the slat, which is opposed to the cutout recess is made engaged by the engaging portion defined by the cutout recess, thus preventing lifting of the shutter curtain.
摘要翻译：一种快门帘提升防止结构，包括：通过沿竖直方向的互锁部分连接多个板条而形成的快门帘幕，站立在该结构开口两侧的导轨，以及一个形成在引导槽的每个导轨。切口凹部通过水平切割位于地板表面上方和附近的前表面的内侧平面部分而形成，使得当快门帘幕的底板保持关闭状态被提升时，连接部分底板和与切口凹部相对的板条通过由切口凹部限定的接合部分接合，从而防止快门帘幕的提升。

17. 发明申请

US20050126533A1 Split connecting rod, engine and vehicle 有权
标题翻译：分体连杆，发动机和车辆
公开(公告)号：US20050126533A1
公开(公告)日：2005-06-16
申请号：US11000561
申请日：2004-12-01
申请人： Shinya Iwasaki , Tsuneo Isobe , Tsuyoshi Kubota
发明人： Shinya Iwasaki , Tsuneo Isobe , Tsuyoshi Kubota
IPC分类号： F16C7/02 , F16C9/04 , F02B75/32 , B21D53/84
CPC分类号： F16C7/023 , F16C9/045 , Y10T29/49288 , Y10T29/4929 , Y10T74/2142
摘要： A split connecting rod includes a fracture start groove that extends in an axial direction X and is located at the approximate center of each of opposing positions on an inner surface of a crank pin opening. A bearing securing groove is provided on either or both of the opposing positions on the inner surface of the crank pin opening. Notches are provided, respectively, at both ends of each of the opposing positions in the axial direction X on the inner surface of the crank pin opening. The fracture start groove has a stress concentration factor that is greater than those of the notches and the bearing securing groove. Preferably, steel for use as the material of a connecting rod has a carbon content of about 0.05% to about 0.45% by weight, more preferably about 0.10% to about 0.35% by weight.
摘要翻译：分割连杆包括沿轴向方向X延伸并且位于曲柄销开口的内表面上的每个相对位置的大致中心处的断裂起始槽。轴承固定槽设置在曲柄销开口的内表面上的相对位置的一个或两个上。在曲柄销开口的内表面上分别在轴向方向X上的每个相对位置的两端分别设置切口。断裂起始槽的应力集中系数大于凹口和轴承固定槽的应力集中系数。优选地，用作连杆材料的钢的碳含量为约0.05重量％至约0.45重量％，更优选为约0.10重量％至约0.35重量％。

18. 发明申请

US20160329323A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160329323A1
公开(公告)日：2016-11-10
申请号：US15029583
申请日：2014-07-17
申请人： Shinya Iwasaki , Satoru Kameyama
发明人： Shinya Iwasaki , Satoru Kameyama
IPC分类号： H01L27/07 , H01L29/32 , H01L29/10 , H01L29/423 , H01L29/739 , H01L29/08
CPC分类号： H01L27/0727 , H01L21/3223 , H01L29/0804 , H01L29/0821 , H01L29/1095 , H01L29/32 , H01L29/4236 , H01L29/7397
摘要： A small semiconductor device having a diode forward voltage less likely to change due to a gate potential is provided. An anode and an upper IGBT structure (emitter and body) are provided in a range in the substrate exposed at the upper surface. A trench, a gate insulating film, and a gate electrode extend along a border of the anode and the upper IGBT structure. Cathode and collector are provided in a range in the substrate exposed at the lower surface. A drift is provided between an upper structure and a lower structure. A crystal defect region extends across the drift above the cathode and the drift above the collector. When a thickness of the substrate is defined as x [μm] and a width of a portion of the crystal defect region that protrudes above the cathode is defined as y [μm], y≧0.007x2−1.09x+126 is satisfied.
摘要翻译：提供了具有由于栅极电位而不太可能改变的二极管正向电压的小型半导体器件。阳极和上部IGBT结构（发射体和主体）设置在暴露在上表面的衬底的范围内。沟槽，栅极绝缘膜和栅极电极沿着阳极和上部IGBT结构的边界延伸。阴极和集电体设置在暴露在下表面的基板的范围内。在上部结构和下部结构之间提供漂移。晶体缺陷区域延伸穿过阴极上方的漂移物，并且在集电极上方漂移。当衬底的厚度被定义为x [μm]，并且在阴极上方突出的晶体缺陷区域的一部分的宽度被定义为y [μm]时，满足y≥0.007x2-1.09x+ 126。

19. 发明授权

US08829055B2 Biofilm formation inhibitor composition 有权
标题翻译：生物膜形成抑制剂组成
公开(公告)号：US08829055B2
公开(公告)日：2014-09-09
申请号：US12293994
申请日：2007-03-23
申请人： Tetsuya Okano , Shinya Iwasaki , Kazuo Isobe , Eiko Ishizuka
发明人： Tetsuya Okano , Shinya Iwasaki , Kazuo Isobe , Eiko Ishizuka
IPC分类号： A01N33/08 , A01N43/20 , A01N37/00 , A01N41/10
CPC分类号： A01N25/30 , A01N31/02 , A01N37/02 , A61L2/18 , A61L2/22 , C11D1/44 , C11D1/65 , C11D1/72 , C11D1/835 , C11D3/48 , A01N37/06 , A01N33/08 , A01N33/04
摘要： A drug and a composition for inhibiting biofilm formation are provided. A biofilm formation inhibitor composition containing the following component (A): (A) at least one or more selected from compounds represented by Formula (1) to Formula (4): wherein R1 to R5 each represent an alkyl group or the like; EO represents an ethyleneoxy group; p represents an integer from 0 to 5; and m+n represents a number from 0 to 30, or a salt thereof; and (B) a surfactant.
摘要翻译：提供了用于抑制生物膜形成的药物和组合物。含有下述成分（A）的生物膜形成抑制剂组合物：（A）选自式（1）〜式（4）表示的化合物中的至少一种以上：其中，R1〜R5各自表示烷基等; EO表示乙烯氧基; p表示0〜5的整数， m + n表示0〜30的数，或其盐; 和（B）表面活性剂。

20. 发明授权

US08686467B2 Semiconductor device comprising semiconductor substrate and having diode region and IGBT region 有权
标题翻译：包括半导体衬底并具有二极管区域和IGBT区域的半导体器件
公开(公告)号：US08686467B2
公开(公告)日：2014-04-01
申请号：US13609868
申请日：2012-09-11
申请人： Shinya Iwasaki , Akitaka Soeno
发明人： Shinya Iwasaki , Akitaka Soeno
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L21/761 , H01L27/0761 , H01L29/0834 , H01L29/32 , H01L29/7397 , H01L29/861
摘要： A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.
摘要翻译：半导体器件包括其中形成二极管区域和IGBT区域的半导体衬底，其中半导体衬底的下表面侧包括设置在二极管区域的第二导电类型阴极区域和第二导电类型之间的低杂质区域 IGBT区域的集电极区域。低杂质区域包括具有比集电极区域低的第一导电类型杂质的密度较低的第一导电类型的第一低杂质区域和具有较低密度的第二导电性的第二导电型第二低杂质区域中的至少一个类型的杂质比阴极区域。

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