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11. 发明申请

WO2007032197A2 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007032197A2
公开(公告)日：2007-03-22
申请号：PCT/JP2006/316806
申请日：2006-08-22
申请人： NISSAN MOTOR CO., LTD. , HAYASHI, Tetsuya , SHIMOIDA, Yoshio , HOSHI, Masakatsu , TANAKA, Hideaki , YAMAGAMI, Shigeharu
发明人： HAYASHI, Tetsuya , SHIMOIDA, Yoshio , HOSHI, Masakatsu , TANAKA, Hideaki , YAMAGAMI, Shigeharu
IPC分类号： H01L29/861 , H01L29/24
CPC分类号： H01L29/861 , H01L21/046 , H01L29/0623 , H01L29/0653 , H01L29/1608 , H01L29/267 , H01L29/6606 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
摘要翻译：半导体器件包括：半导体基底; 与半导体基底接触并且具有与半导体基底不同的带隙的异质半导体区域; 连接到所述异质半导体区域的第一电极; 以及形成与半导体基底的欧姆接触的第二电极。异质半导体区域包括通过层叠在至少两层之间的边界处晶体取向不连续的多个半导体层而形成的层叠的异质半导体区域。

12. 发明公开

EP3764529A1 METHOD FOR CONTROLLING RESONANT POWER CONVERSION DEVICE, RESONANT POWER CONVERSION DEVICE, AND DC-DC CONVERTER 有权
公开(公告)号：EP3764529A1
公开(公告)日：2021-01-13
申请号：EP18909189.5
申请日：2018-03-07
申请人： NISSAN MOTOR CO., LTD.
发明人： KAI, Toshihiro , YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , ZUSHI, Yusuke , SHIMOMURA, Taku
IPC分类号： H02M3/155
摘要： The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L 0 , C 0 ) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

13. 发明授权

EP2565922B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2565922B1
公开(公告)日：2020-04-01
申请号：EP11775053.9
申请日：2011-04-27
申请人： NISSAN MOTOR CO., LTD.
发明人： YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , SUZUKI, Tatsuhiro
IPC分类号： H01L29/78 , H01L29/872 , H01L29/12 , H01L29/47

14. 发明公开

EP2911205A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2911205A1
公开(公告)日：2015-08-26
申请号：EP13847805.2
申请日：2013-10-17
申请人： Nissan Motor Co., Ltd
发明人： MARUI, Toshiharu , HAYASHI, Tetsuya , YAMAGAMI, Shigeharu , NI, Wei , EMORI, Kenta
IPC分类号： H01L29/861 , H01L29/06 , H01L29/47 , H01L29/868 , H01L29/872
CPC分类号： H01L29/063 , H01L21/26513 , H01L21/30604 , H01L21/308 , H01L29/06 , H01L29/0615 , H01L29/0619 , H01L29/1608 , H01L29/165 , H01L29/417 , H01L29/47 , H01L29/6606 , H01L29/66136 , H01L29/861 , H01L29/872
摘要： A semiconductor device (100) comprises: a semiconductor substrate (1); a drift region (2) of a first conductivity type having a trench in part of an upper portion thereof and arranged on a first main surface of the semiconductor substrate (100); an electric field reducing region (4) of a second conductivity type arranged, in a bottom portion of the trench, only around a corner portion and not in a center portion; an anode electrode (9) embedded in the trench; and a cathode electrode (10) arranged on a second main surface of the semiconductor substrate (100) which is opposite to the first main surface.
摘要翻译：一种半导体器件（100）包括：半导体衬底（1）; 第一导电类型的漂移区（2），其在其上部的一部分中具有沟槽并且布置在半导体衬底（100）的第一主表面上; 第二导电类型的电场减少区域（4），其布置在沟槽的底部中，仅围绕拐角部分而不布置在中心部分中; 埋入沟槽中的阳极电极（9）和布置在半导体衬底（100）的与第一主表面相对的第二主表面上的阴极电极（10）。

15. 发明授权

EP2911205B1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：EP2911205B1
公开(公告)日：2020-12-09
申请号：EP13847805.2
申请日：2013-10-17
申请人： NISSAN MOTOR CO., LTD.
发明人： MARUI, Toshiharu , HAYASHI, Tetsuya , YAMAGAMI, Shigeharu , NI, Wei , EMORI, Kenta
IPC分类号： H01L21/329 , H01L29/872 , H01L29/06 , H01L29/861 , H01L29/417 , H01L29/165 , H01L29/47

16. 发明公开

EP3496137A1 SEMICONDUCTOR CAPACITOR 有权
公开(公告)号：EP3496137A1
公开(公告)日：2019-06-12
申请号：EP16911662.1
申请日：2016-08-05
申请人： Nissan Motor Co., Ltd.
发明人： HAYAMI, Yasuaki , HAYASHI, Tetsuya , ZUSHI, Yusuke , NI, Wei , OKUBO, Akinori
IPC分类号： H01L21/822 , H01L27/04
摘要： To meet various requirements with a circuit formed from a semiconductor substrate.
The present invention is provided with a semiconductor substrate (2A), an electrode group (4) that is formed on the semiconductor substrate (2A), and insulators (2B), wherein a plurality of capacitors (C1-C3) are formed. The plurality of capacitors (C1-C3) have a structure in which the insulators (2B) are sandwiched between each electrode of the electrode group (4). At least one of the plurality of capacitors (C1-C3) is set to be different in at least one of a tolerance, which is a capability of the capacitors (C1-C3) to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors (C1-C3).

17. 发明公开

EP3474449A1 DRIVE DEVICE 有权
公开(公告)号：EP3474449A1
公开(公告)日：2019-04-24
申请号：EP16905528.2
申请日：2016-06-17
申请人： Nissan Motor Co., Ltd.
发明人： SHIMOMURA, Taku , HAYASHI, Tetsuya , OKUBO, Akinori , IWASAKI, Yuichi
IPC分类号： H03K17/04 , H02M1/08 , H03K17/16 , H03K17/687
摘要： A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

18. 发明公开

EP3467869A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3467869A1
公开(公告)日：2019-04-10
申请号：EP16903929.4
申请日：2016-05-30
申请人： Nissan Motor Co., Ltd.
发明人： NI, Wei , HAYASHI, Tetsuya , HAYAMI, Yasuaki , TANAKA, Ryota
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786
摘要： A semiconductor device includes: a substrate; a drift region of a first conductivity type formed on a main surface of the substrate; a well region of a second conductivity type formed in a main surface of the drift region; a source region of the first conductivity type formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region of the first conductivity type formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region of the second conductivity type formed on a surface of the gate insulating film facing the drain region; and a connection region of the second conductivity type formed in contact with the well region and the protection region.

19. 发明公开

EP2565922A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP2565922A1
公开(公告)日：2013-03-06
申请号：EP11775053.9
申请日：2011-04-27
申请人： Nissan Motor Co., Ltd
发明人： YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , SUZUKI, Tatsuhiro
IPC分类号： H01L27/04 , H01L21/336 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872
CPC分类号： H01L21/8213 , H01L21/046 , H01L21/0485 , H01L21/823487 , H01L27/0727 , H01L29/0619 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/6606 , H01L29/66068 , H01L29/7806 , H01L29/7813 , H01L29/861 , H01L29/872
摘要： An object of the invention is to reduce distance between each pair of adjacent insulating gate portions and thereby miniaturize a semiconductor device. A drift region is provided on a semiconductor substrate; first well regions are provided in upper part of the drift region; and source regions are provided in upper part of the first well regions. Each insulating gate portion forms a channel (a inversion layer) in part of the first well region located between the drift region and source region. A first main electrode forms junctions with part of the drift region exposed in the major surface to constitute unipolar diodes and is connected to the first well regions and the source regions. The plurality of insulating gate portions have linear patterns parallel to each other when viewed in the normal direction of the major surface. Between each pair of adjacent insulating gate portions, junction portions in which the first main electrode forms junctions with the drift region and the first well regions are arranged along the direction that the insulating gate portions extend. The channels are formed at least in the normal direction of the major surface.
摘要翻译：本发明的目的是减小每对相邻的绝缘栅极部分之间的距离，从而使半导体器件小型化。漂移区域设置在半导体衬底上; 第一阱区设置在漂移区的上部; 并且在第一阱区的上部提供源极区。每个绝缘栅极部分在位于漂移区和源极区之间的第一阱区的一部分中形成沟道（反型层）。第一主电极与在主表面中暴露的漂移区的一部分形成结以构成单极二极管并连接到第一阱区和源极区。当在主表面的法线方向上观察时，多个绝缘栅极部分具有彼此平行的线性图案。在每对相邻的绝缘栅极部分之间，第一主电极与漂移区域和第一阱区域形成结的结部分沿着绝缘栅极部分延伸的方向布置。通道至少在主表面的法线方向上形成。

20. 发明授权

EP3467869B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3467869B1
公开(公告)日：2020-05-06
申请号：EP16903929.4
申请日：2016-05-30
申请人： Nissan Motor Co., Ltd.
发明人： NI, Wei , HAYASHI, Tetsuya , HAYAMI, Yasuaki , TANAKA, Ryota
IPC分类号： H01L29/78 , H01L29/786 , H01L29/423 , H01L29/06 , H01L29/10 , H01L21/336

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