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11. 发明专利

JPH06247788A METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND DEVICE THEREFOR 失效
公开(公告)号：JPH06247788A
公开(公告)日：1994-09-06
申请号：JP3198893
申请日：1993-02-22
申请人： NIPPON STEEL CORP
发明人： TANAKA MASAHIRO
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
摘要： PURPOSE:To obtain a high-quality silicon single crystal by freely operating the slide opening and closing mechanism, etc., of the cooling cylinder arranged in a single crystal producing device. CONSTITUTION:A crucible 4 charged with polycrystal silicon is heated with a heater 5 to melt the raw material and to obtain a molten material 9, a seed crystal 12 is dipped in the molten material 9, the crucible 4 and seed crystal 12 are rotated and pulled up, and a single crystal ingot 10 is introduced into the space in the cylinder 22 provided on the inner periphery of a cooling cylinder 21. An inert gas is simultaneously introduced into a chamber 2 from an inert gas inlet 15 furnished on the wall surface of a pulling-up chamber 2b, passed through the gap between the inner periphery of the cooling cylinder 21, etc., and the ingot 10 and allowed to flow down into a heating chamber 2a. Meanwhile, an inert gas is introduced from an inlet 23 provided to the upper wall surface of the chamber 2, passed through an inert gas pipe 24 furnished outside the cooling cylinder 21, blown against the surface of the ingot 10 from an inert gas inlet 25 vertically to the axis of a single crystal, blown against the vicinity of the lower end of the ingot 10 and exhausted from an exhaust port 16.

12. 发明专利

JP2006219313A Silicon solidifying and refining apparatus and method 有权
标题翻译：硅溶胶和精炼装置及方法
公开(公告)号：JP2006219313A
公开(公告)日：2006-08-24
申请号：JP2005032115
申请日：2005-02-08
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： TOKUMARU SHINJI , TANAKA MASAHIRO , OKAZAWA KENSUKE , KONDO JIRO , OKAJIMA MASAKI
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing high-purity silicon usable as a material for solar batteries, etc., even in an oxygen-contaminated atmosphere, and capable of removing metallic elements, etc., by unidirectionally solidifying low-purity silicon.
SOLUTION: The silicon solidifying and refining apparatus is one essentially consisting of a non-sealed furnace body 1, a mold 4 set therein and used for solidifying molten silicon, a heating means 2 for heating the mold 4 and the upper part of the molten silicon in the mold 4, a cooling means 9 for cooling the bottom of the mold 4, a heat insulation means 3 that thermally insulates the inside of the furnace body 1, and an introduction means 10 for an inert gas, wherein the heating means 2 is a heater chiefly made of SiC, and the heat insulation means 3 is a heat-insulating material chiefly made of Al
2 O
3 . The silicon solidifying and refining method using the same is also provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在氧气污染的气氛中也能够除去金属元素等，提供可用作太阳能电池等材料的高纯度硅的装置和方法，通过单向固化低纯度硅。解决方案：硅凝固精炼装置主要由非密封炉体1，设置在其中的模具4和用于固化熔融硅的组合构成，加热装置2用于加热模具4和上部模具4中的熔融硅，用于冷却模具4的底部的冷却装置9，将炉体1的内部热绝缘的隔热装置3和用于惰性气体的引入装置10，其中加热装置2是主要由SiC制成的加热器，隔热装置3是主要由Al O 3 SB 3制成的绝热材料。还提供了使用其的硅固化和精制方法。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JPH08259381A PULLING UP-CONTROLLING METHOD FOR SINGLE CRYSTAL 失效
公开(公告)号：JPH08259381A
公开(公告)日：1996-10-08
申请号：JP6808595
申请日：1995-03-27
申请人： NIPPON STEEL CORP
发明人： TANAKA MASAHIRO , HAGA HIROTSUGU , HASEBE MASAMI
IPC分类号： C30B15/22 , C30B15/26 , C30B29/06
摘要： PURPOSE: To realize an optimum temperature condition for crystal growth by measuring a two-dimensional temperature distribution and its variation with time on the surface of a melt during pulling up of a single crystal in the single crystal producing method pulling up the single crystal from the melt. CONSTITUTION: In pulling up a single crystal molten in a rotating crucible, an optimum growing environment is known by measuring two-dimensional temperature distribution and its variation with time on the surface of the melt and the rotation speed of the crucible, a rotation speed of the single crystal, relative positions of the crucible and a heater, and a heating condition of the heater are controlled by the resultant information. Summaries of melt current in pulling up by a Czochralski method are shown in the figure. The rotating laminar fluid is about axially symmetrical flow at a low speed rotation of the crucible rotation and the surface temperature distribution of the melt surface is also about axial symmetry. When the rotation speed of the crucible is increased, the flow transfers to axial asymmetry and also the temperature distribution becomes asymmetry. Besides, a temperature gradient in the radial direction also exists and an observation of two-dimensional temperature distribution by an image pickup device such as a CCD camera is necessary.

14. 发明专利

JPH05319988A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH05319988A
公开(公告)日：1993-12-03
申请号：JP13290192
申请日：1992-05-25
申请人： NIPPON STEEL CORP
发明人： HAGA HIROTSUGU , IKARI ATSUSHI , TANAKA MASAHIRO
IPC分类号： C30B15/00 , C30B29/06 , C30B33/02 , H01L21/208
摘要： PURPOSE:To reduce crystal defects by pulling up or working a single crystal so as to form the head and bottom of an Si ingot into conical shapes, supporting both the conical parts with pans, vertically holding the ingot in a furnace and heat-treating the ingot at a specific temperature. CONSTITUTION:The head and bottom of an Si single crystal ingot 1 are formed into conical shapes having 30-90 deg. acute angles (alpha) and (alpha') by forming conical parts 5 leading from a seed crystal to a straight drum part 3 in pulling up the Si single crystal or cutting the ingot so as to limit the propagating region of dislocation caused by plastic deformation during the heat treatment. Both the conical parts of the Si ingot 1 are supported by pans 2 and 2', having a conical recessed part and made by using a material such as quartz resistant to a high temperature of >=1150 deg.C. The upper part is fixed in the horizontal direction in a heat-treating furnace and held movably in the vertical direction. The ingot is heat-treated at 1150-1400 deg.C for a prescribed time, then cooled to

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