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11. 发明公开

EP1736573A4 METHOD FOR PRODUCING III GROUP ELEMENT NITRIDE CRYSTAL, PRODUCTION APPARATUS FOR USE THEREIN, AND SEMICONDUCTOR ELEMENT PRODUCED THEREBY 审中-公开
标题翻译：用于生产晶体由III，生产设备中使用的那里，特此半导体元件的元素氮化物
公开(公告)号：EP1736573A4
公开(公告)日：2010-09-15
申请号：EP05727620
申请日：2005-03-31
申请人： PANASONIC CORP , MORI YUSUKE
发明人： MORI YUSUKE , MINEMOTO HISASHI , KITAOKA YASUO , KIDOGUCHI ISAO , KAWAMURA FUMIO , SASAKI TAKATOMO , TAKAHASHI YASUHITO
IPC分类号： C30B29/38 , C30B9/00 , C30B9/08 , C30B9/10
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096

12. 发明公开

EP1741807A4 APPARATUS FOR PRODUCTION OF CRYSTAL OF GROUP III ELEMENT NITRIDE AND PROCESS FOR PRODUCING CRYSTAL OF GROUP III ELEMENT NITRIDE 有权
标题翻译： DEVICE FOR PRODUCING晶体Ⅲ族氮化物的元件，并且产生CRYSTALⅢ族氮化物的元件的方法
公开(公告)号：EP1741807A4
公开(公告)日：2009-07-08
申请号：EP05736696
申请日：2005-04-27
申请人： PANASONIC CORP , MORI YUSUKE
发明人： MORI YUSUKE , MINEMOTO HISASHI , KITAOKA YASUO , KIDOGUCHI ISAO , KAWAMURA FUMIO , SASAKI TAKATOMO , UMEDA HIDEKAZU , TAKAHASHI YASUHITO
IPC分类号： C30B9/00 , C30B9/10 , C30B29/38 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： An apparatus for production of a crystal of Group III element nitride and process for producing a crystal of Group III element nitride, by which a crystal of high quality can be produced. The crystal growth by means of this apparatus can be performed in, for example, the following manner. Raw material for crystal (131) and nitrogenous gas are introduced in reaction vessel (120) and heated by means of heater (110), and a crystal is grown in pressurized atmosphere. The above gas is delivered from gas supply unit (180) through a gas inlet of the reaction vessel into the reaction vessel (120), and discharged from a gas outlet of the reaction vessel into the interior of pressure tight vessel (102). As the above gas is directly, without passing through the pressure tight vessel (102), introduced into the reaction vessel (120), the mingling of impurities adhering to the pressure tight vessel (102), etc. into a field of crystal growth can be avoided. Further, as the above gas flows through the interior of the reaction vessel (120), there can be avoided, for example, condensation of vaporized alkali metal, etc. at the gas inlet, etc. and inflow thereof into the gas supply unit (180), etc. As a result, the quality of crystal of Group III element nitride obtained can be enhanced.

13. 发明专利

JPH06132595A SECONDARY HIGHER HARMONIC LIGHT EMITTER 失效
公开(公告)号：JPH06132595A
公开(公告)日：1994-05-13
申请号：JP27899792
申请日：1992-10-16
申请人： SASAKI TAKATOMO , MITSUBISHI CABLE IND LTD
发明人： SASAKI TAKATOMO
IPC分类号： G02F1/37 , H01S3/08 , H01S3/109
摘要： PURPOSE:To provide a secondary higher harmonic light emitter capable of being manufactured in a simple structure at low cost as well as emitting green or blue colored light. CONSTITUTION:The title secondary higher harmonic light emitter is provided with a beam source 1 formed of a mirror structure 2 on one end surface and a nonreflective structure 3 on the opposite surface, a domain inversion structure 5 comprising nonlinear optical material as well as a member 4 formed of a mirror structure 6 on an optical oscillation surface and another nonreflective structure 10 on the opposite surface. In such a constitution, a resonator structure 7 is formed between the mirror structures 2 and 6 respectively comprising the beam source 1 and the member 4 while it is recommended that the beam source 1 is to be a semiconductor laser or/and a semiconductor laser excited solid state laser. Through these procedures, this beam emitter can be miniaturized by reducing the number of components thereby enabling the title secondary higher harmonic emitter capable of emitting green or blue colored beams to be manufactured at low cost.

14. 发明专利

JPH06317822A METHOD FOR GROWING CESIUM TRIBORATE SINGLE CRYSTAL AND NONLINEAR OPTICAL EQUIPMENT USING THE SAME 失效
公开(公告)号：JPH06317822A
公开(公告)日：1994-11-15
申请号：JP9592893
申请日：1993-04-22
申请人： SASAKI TAKATOMO
发明人： GO ISEI , SASAKI TAKATOMO
IPC分类号： C30B15/00 , C30B29/22 , G02F1/35 , G02F1/355 , G02F1/37
摘要： PURPOSE:To provide a method for growing a cesium triborate single crystal having a practically sufficient size and a nonlinear optical equipment produced from such a single crystal. CONSTITUTION:In the nonlinear optical device provided with the equipment for passing a bundle of incident electromagnetic wave beams through a nonlinear optical crystal and emitting at least one bundle of outgoing beams having a frequency different from that of the incident electromagnetic wave beam, the nonlinear optical crystal is a CsB3O5 single crystal. A raw material contg. a Cs-source compd. and a B-source compd, in 1:3 molar fraction is heated and melted, a seed crystal is brought into contact with the molten material at a temp. slightly higher than the m.p. of CsB3O5 and rotated at

15. 发明专利

JPH03276132A OPTICAL DEVICE WITHOUT LASER DAMAGE 失效
公开(公告)号：JPH03276132A
公开(公告)日：1991-12-06
申请号：JP7775590
申请日：1990-03-27
申请人： HITACHI METALS LTD , SASAKI TAKATOMO , YOKOYA ATSUYUKI , YOSHIDA KUNIO
发明人： FURUKAWA YASUNORI , SATO MASAZUMI , SASAKI TAKATOMO , YOKOYA ATSUYUKI , YOSHIDA KUNIO
IPC分类号： G02F1/35 , G02F1/355 , H01S3/108
摘要： PURPOSE:To obtain the optical device which is extremely less damaged with a laser by changing the threshold of the laser damage in proportion approximately to the square of a wavelength and in proportion approximately to 1/2 square of a pulse width. CONSTITUTION:For example, LiNbO3, KTiOPO4, beta-BaB2O4, KNbO3, and MNA, etc., which are org. nonlinear optical materials, are used as the single crystal without laser damages. In the case of the LiNbO3, MgO is incorporated at 0.1 to 2 mol therein. The threshold of the laser damage is >=10 GW/cm by irradiating the single crystal with the laser of 1.053 mum to 1ns wavelength pulse width. The threshold of the laser damage is changed in proportion approximate ly to the square of the wavelength and in proportion approximately to 1/2 square of the pulse width. The device is so formed that such defects as to become the centers of scattering to the laser passing the device do not substan tially exist.

16. 发明专利

JPH08217591A FURNACE FOR GROWING CRYSTAL AND APPARATUS FOR GROWING CRYSTAL BY USING THE SAME 失效
公开(公告)号：JPH08217591A
公开(公告)日：1996-08-27
申请号：JP5966695
申请日：1995-02-10
申请人： SHIN SEIKI KK , SASAKI TAKATOMO
发明人： SASAKI TAKATOMO , ODAKA MICHIHIRO
IPC分类号： C30B15/08 , C30B15/20 , C30B29/60 , D01F9/08
摘要： PURPOSE: To avert the hindrance of movement at the time of a center alignment work according direct action of the weight of an upper furnace body on a movable member and the failure in detection of axis misalignment by the mere feasibility of visually observing the lower aperture of a heating vessel only from the one direction on the outer peripheral side of the furnace body. CONSTITUTION: This furnace 15 for growing the crystal is constituted by interposing the movable member 19 between the upper furnace body 18 and the lower furnace body 17, placing the heating vessel for storing crystal material at the movable member 19 and pulling down a fiber crystal through the lower aperture of the heating vessel. The furnace has an elastic energizing means 34 for lowering the contact pressure acting on the movable member 19 from the upper furnace body 18 to the contact pressure by its own weight or below. Opening windows 51, 52 which allow the visual observation of the aperture from at least two directions are formed in the sections from the outer peripheral side of the furnace 15 for growing the crystal to the periphery of the lower aperture of the heating furnace.

17. 发明专利

JPH05210137A SECOND HARMONIC WAVE GENERATOR 失效
公开(公告)号：JPH05210137A
公开(公告)日：1993-08-20
申请号：JP27899692
申请日：1992-10-16
申请人： SASAKI TAKATOMO , MITSUBISHI CABLE IND LTD
发明人： SASAKI TAKATOMO
IPC分类号： G02F1/37 , H01S3/109 , H01S5/00
摘要： PURPOSE:To decrease residual phase matching errors and to enhance efficiency. CONSTITUTION:This generator has at least a member 34 having periodic polarization inversion structures and consisting of a nonlinear optical material, a light source 31 and a means for controlling the angle at which the basic wave 33 from the light source is made incident on the material. More preferably, the light source 33 is a solid-state laser excited by a semiconductor laser and the member or/and the laser are disposed in a resonator structure. The distance between the inversion layers 35 where a basic wave 33 crosses is fluctuated by controlling the incident angle of the basic wave, by which the residual phase matching errors are decreased.

18. 发明公开

EP1754810A4 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： III族氮化物半导体晶体，加工用于生产和III族氮化物半导体元件
公开(公告)号：EP1754810A4
公开(公告)日：2009-02-25
申请号：EP05727904
申请日：2005-03-30
申请人： SUMITOMO ELECTRIC INDUSTRIES , MORI YUSUKE
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , NAKAHATA SEIJI , HIROTA RYU
IPC分类号： C30B29/38 , C30B9/12 , C30B11/00 , C30B11/06 , C30B29/40 , H01L21/208 , H01L33/00 , H01S5/323
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341

19. 发明公开

EP1736572A4 GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： III族氮化物晶体衬底，工艺用于生产和III族氮化物半导体元件
公开(公告)号：EP1736572A4
公开(公告)日：2009-02-25
申请号：EP05721657
申请日：2005-03-30
申请人： SUMITOMO ELECTRIC INDUSTRIES , MORI YUSUKE
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , HIROTA RYU , NAKAHATA SEIJI
IPC分类号： C30B29/38 , C30B9/00 , C30B9/08 , C30B9/10 , C30B11/00 , C30B11/06 , C30B29/40 , H01L21/208
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.

20. 发明公开

EP1560261A4 METHOD FOR PROCESSING NITRIDE SEMICONDUCTOR CRYSTAL SURFACE AND NITRIDE SEMICONDUCTOR CRYSTAL OBTAINED BY SUCH METHOD 审中-公开
标题翻译：用于处理氮化物HALBLEITERKRISTALLOBERFLûCHEN，并从这个过程中方法获得的氮化物半导体晶体
公开(公告)号：EP1560261A4
公开(公告)日：2008-02-20
申请号：EP04735986
申请日：2004-06-03
申请人： SUMITOMO ELECTRIC INDUSTRIES , MORI YUSUKE
发明人： NAKAHATA SEIJI , HIROTA RYU , ISHIBASHI KEIJI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： C30B29/38 , C30B29/40 , C30B33/00 , C30B33/10 , H01L21/306
CPC分类号： C30B29/403 , C30B29/38 , C30B33/00 , C30B33/10 , H01L21/30612
摘要： A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0.01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.

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