专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

WO1998012756A1 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO1998012756A1
公开(公告)日：1998-03-26
申请号：PCT/JP1997003324
申请日：1997-09-19
申请人： NGK INSULATORS, LTD. , TERASAWA, Yoshio , SEKIYA, Takayuki
发明人： NGK INSULATORS, LTD.
IPC分类号： H01L29/744
CPC分类号： H01L21/30604 , H01L21/3086 , H01L21/31111 , H01L21/31144 , H01L29/7392
摘要： There are repeated the step of isotropically etching an oxide film (12) formed over the surface of a semiconductor substrate (11) through an opening (12a) to form a recess (11a), the step of anisotropically etching an oxide film (14) formed on the inner face of the recess to form an opening (14a), and the step of isotropically etching through the opening to form a recess (11b) succeeding to the recess (11a) through the opening (14a). A deep gate structure can be achieved within a short time while eliminating the overlapping errors of a mask, by using the overhangs of the openings formed in the oxide films (12, 14, 15 and 16) as the mask in all the following etching steps to repeat the isotropic and anisotropic etching steps through the same mask. The sectional shapes of the recesses are formed of a plurality of curved surfaces having different curvatures. It is possible to achieve a semiconductor device having recesses of a large aspect ratio (i.e., length/width ratio), i.e., of a larger depth than an opening width.
摘要翻译：重复对通过开口（12a）在半导体衬底（11）的表面上形成的氧化膜（12）进行各向同性蚀刻以形成凹部（11a）的步骤，各向异性蚀刻氧化膜（14）的步骤，形成在所述凹部的内表面上以形成开口（14a），并且通过所述开口各向同性蚀刻以形成通过所述开口（14a）在所述凹部（11a）之后的凹部（11b）的步骤。可以在短时间内实现深栅极结构，同时通过在所有后续蚀刻步骤中通过使用在氧化物膜（12,14,15和16）中形成的开口的突出部作为掩模来消除掩模的重叠误差通过相同的掩模重复各向同性和各向异性蚀刻步骤。凹部的截面形状由具有不同曲率的多个曲面形成。可以实现具有大的纵横比（即长宽比）的凹槽，即比开口宽度更大的深度的半导体器件。

12. 发明申请

WO1998012755A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1998012755A1
公开(公告)日：1998-03-26
申请号：PCT/JP1997003276
申请日：1997-09-17
申请人： NGK INSULATORS, LTD. , TERASAWA, Yoshio
发明人： NGK INSULATORS, LTD.
IPC分类号： H01L29/74
CPC分类号： H01L29/66356 , H01L29/66416 , H01L29/7392 , H01L29/7722
摘要： An electrostatic induction type semiconductor device especially for a high electric power, a recess (12) is formed in one surface of a silicon substrate (11) of one conduction type, in which a gate region (13) of the opposite conduction type is formed in the bottom face of the recess, in which a recess (14) is formed in the portion which is surrounded by the adjoining gate regions, and in which an island cathode short-circuiting region (15) of the opposite conduction type is so formed in the bottom face of the recess as to extend to the surface of the silicon substrate. A cathode region (17) extending to the surface of the silicon substrate is formed to continue to a channel region (16) which is surrounded by the gate region (13) and the cathode short-circuiting region (15). A cathode electrode substrate (21) is mounted in contact with the cathode short-circuiting region (15) and the cathode region (17). The carriers to reside in the channel region is directly swept, when turned OFF, through the cathode short-circuiting region (15) to the cathode electrode substrate (21) so that the electrostatic induction type semiconductor device capable of breaking a high current at a high speed without increasing the ON resistance can be provided.
摘要翻译：特别是用于高功率的静电感应型半导体器件，在一个导电类型的硅衬底（11）的一个表面上形成凹槽（12），其中形成相反导电类型的栅极区域（13）在所述凹部的底面中，在由相邻的栅极区域包围的部分中形成有凹部（14），并且形成有相反导电型的岛状阴极短路区域（15）在凹槽的底面中延伸到硅衬底的表面。形成延伸到硅衬底表面的阴极区域（17），以连续到由栅极区域（13）和阴极短路区域（15）围绕的沟道区域（16）。阴极电极基板（21）与阴极短路区域（15）和阴极区域（17）接触地安装。驻留在通道区域中的载流子在关闭时通过阴极短路区域（15）直接扫描到阴极电极基板（21），使得能够在一个或多个阴极电极基板上断开高电流的静电感应型半导体器件可以提供高速度而不增加导通电阻。

13. 发明申请

WO1994008345A1 SOLID INSULATOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：固体绝缘体及其制造方法
公开(公告)号：WO1994008345A1
公开(公告)日：1994-04-14
申请号：PCT/JP1993001354
申请日：1993-09-21
申请人： NGK INSULATORS, LTD. , ITOH, Hiromu , YAMAGUCHI, Makio , ITOH, Naohito , NAKAI, Takao , MORI, Shigeo
发明人： NGK INSULATORS, LTD.
IPC分类号： H01B17/14
CPC分类号： H01B17/14 , H01B19/00 , H01B19/04
摘要： The present invention aims at providing a solid insulator of a high strength, and a method of manufacturing the same. The solid insulator is characterized in that it consists of porcelain in which the quantity of crystals of cristobalite is not more than 10 %, an internal strain in the direction of compression in a columnar insulator body being larger in the diametrically inner portion thereof than in the diametrically outer portion thereof, the difference Y between the internal strain in the outer circumferential portion of the insulator body and that in the diametrically central portion thereof Y >= (1.76 x 10-6)X, wherein X(mm) represents the diameter of the insulator body. A method of manufacturing such a solid insulator is characterized in that a sintered insulator is quenched so as to increase the difference between the internal strain in the inner portion of the insulator and that in the outer portion thereof.
摘要翻译：本发明旨在提供一种高强度的固体绝缘体及其制造方法。固体绝缘体的特征在于，其中方石英晶体的量不超过10％的陶瓷，柱状绝缘体的压缩方向的内部应变在直径方向内部比在绝缘体的外周部的内部应变与其直径方向的中心部Y> =（1.76×10 -6）X的内部应变之间的差异Y，其中X（mm）表示直径绝缘子体。制造这种固体绝缘体的方法的特征在于，烧结绝缘体被淬火以增加绝缘体的内部部分和其外部部分中的内部应变之间的差异。

14. 发明申请

WO1993019017A1 COMPOSITION FOR HIGH PRESSURE CASTING SLIP, HIGH PRESSURE CASTING SLIP AND METHOD FOR PREPARING THE COMPOSITION AND SLIP 审中-公开
标题翻译：用于高压铸造滑移组合物，高压铸造滑移和用于制备组合物和滑动剂的方法
公开(公告)号：WO1993019017A1
公开(公告)日：1993-09-30
申请号：PCT/JP1993000345
申请日：1993-03-24
申请人： NGK INSULATORS, LTD. , SATO, Ritsu
发明人： NGK INSULATORS, LTD.
IPC分类号： C04B33/28
CPC分类号： C04B35/626 , C04B33/28 , C04B35/622
摘要： Reduction in operation time for high pressure casting is intended. A composite is adopted as a composite for slip which mainly comprises a first powder for forming a skeleton of a casting raw material, and a second powder for forming a skeleton of the casting raw material, as well as functioning as a plasticizer, the first and second powders being uniformly mixed with each other in a dry state, whereby preparation of slip having only a minimum water content required to maintain a preferred fluidity is effected simply in a short period of time, and/or removal of water in the slip at the time of casting is effected in a short period of time, reduction of operation time of casting being thereby attained.

15. 发明申请

WO1989007584A1 PRODUCTION OF CERAMIC HONEYCOMB STRUCTURE 审中-公开
标题翻译：陶瓷蜂窝结构的生产
公开(公告)号：WO1989007584A1
公开(公告)日：1989-08-24
申请号：PCT/JP1989000139
申请日：1989-02-10
申请人： NGK INSULATORS, LTD. , MIYAHARA, Kazuhiro
发明人： NGK INSULATORS, LTD.
IPC分类号： C04B38/00
CPC分类号： C04B38/0615 , C04B35/64 , C04B38/0006
摘要： This invention provides a method of firing a ceramic honeycomb structure which comprises varying the oxygen concentration in a firing atmosphere in a temperature range where a molding aid and/or a pore forming material is difficultly burnt or in a temperature range where they are burnt, to inhibit abrupt heat buildup of the aid etc., increasing the oxygen concentration in the atmosphere in a temperature range where the pore forming material and/or the molding aid is difficultly burnt to promote their combustion so as to reduce the temperature difference between the internal and external parts of the honeycomb structure, and making uniform the internal and external characteristics without causing any crack inside and at the end parts of the honeycomb structure and without causing internal melt loss. In this manner the method of the invention enables satisfactory firing. Moreover, since it is not necessary to reduce the firing rate, the firing schedule can be shortened and production efficiency can be improved. Accordingly, the present invention is particularly effective for a ceramic honeycomb structure.

16. 发明申请

WO1998011557A1 PROCESS FOR PREPARING METALLIC BERYLLIUM PEBBLES 审中-公开
标题翻译：制备金属贝氏体的方法
公开(公告)号：WO1998011557A1
公开(公告)日：1998-03-19
申请号：PCT/JP1997003207
申请日：1997-09-11
申请人： JAPAN ATOMIC ENERGY RESEARCH INSTITUTE , NGK INSULATORS, LTD. , ISHITSUKA, Etsuo , KAWAMURA, Hiroshi , SAKAMOTO, Naoki , NISHIDA, Kiyotoshi
发明人： JAPAN ATOMIC ENERGY RESEARCH INSTITUTE , NGK INSULATORS, LTD.
IPC分类号： G21B01/00
CPC分类号： G21B1/19 , B22F9/10 , B22F9/14 , B22F2998/00 , C22B4/005 , C22B9/226 , C22B35/00 , C22C1/0408 , G21B1/115 , G21B1/13 , G21C5/12 , Y02E30/128 , Y02E30/16 , Y02E30/40
摘要： In preparing metallic beryllium pebbles, limitations are imposed on the atmospheric gas pressure in the closed container, arc current, rotational peripheral velocity of a wearable electrode and amount of iron contained in the wearable electrode, in order to stably obtain metallic beryllium pebbles having grain size of from 0.1 to 1.8 mm and an average grain size of from 0.05 to 0.6 mm. The obtained metallic beryllium pebbles are featured by not only a strikingly high tritium radioactivity but also excellent resistance against swelling, and are, hence, very effective as a material for nuclear fusion reactors. Owing to their light weight and high melting point, furthermore, the metallic beryllium pebbles can be advantageously used as a material for aerospace structures.
摘要翻译：在制备金属铍鹅卵石时，对密闭容器中的气氛气体压力，电弧电流，耐磨电极的旋转圆周速度和包含在可穿戴电极中的铁量的限制，为了稳定地获得具有晶粒尺寸的金属铍卵石为0.1〜1.8mm，平均粒径为0.05〜0.6mm。所获得的金属铍鹅卵石不仅具有惊人的高氚放射性，而且具有优异的抗肿胀性，因此作为核聚变反应堆的材料非常有效。此外，由于它们的重量轻和熔点高，金属铍鹅卵石可以有利地用作航空航天结构的材料。

17. 发明申请

WO1997028807A1 ANTICANCER SUBSTANCE SUPPRESSING CANCEROUS METASTASIS 审中-公开
标题翻译：抗体物质抑制CANCEROUS METASTASIS
公开(公告)号：WO1997028807A1
公开(公告)日：1997-08-14
申请号：PCT/JP1996000268
申请日：1996-02-08
申请人： NGK INSULATORS, LTD. , BISEIKEN CO., LTD. , HASEGAWA, Takaaki , MIYAMOTO, Kenichi , KAWASE, Mitsuo , YOSHIDA, Yasuko , INUKAI, Tadahiko
发明人： NGK INSULATORS, LTD. , BISEIKEN CO., LTD.
IPC分类号： A61K31/70
CPC分类号： A61K31/7012 , A61K31/726 , C07H7/027
摘要： An anticancer agent capable of suppressing metastasis of cancer cells even when employed alone, exhibiting little side effects and an extremely low toxicity even in the case of prolonged administration. The agent comprises sialic acid, its salt, its polymer and/or a salt of its polymer as the active ingredient(s).
摘要翻译：即使在单次使用时也能够抑制癌细胞的转移的抗癌剂，即使在长时间给药的情况下也显示出很小的副作用和极低的毒性。该试剂包含唾液酸，其盐，其聚合物和/或其聚合物的盐作为活性成分。

18. 发明申请

WO1997024130A1 CANCEROUS METASTASIS INHIBITOR COMPRISING SURFACE POLYSACCHARIDE OF STREPTOCOCCUS AGALACTIAE Ia TYPE OR Ib TYPE AS PRINCIPAL COMPONENT 审中-公开
标题翻译：含有STREPTOCOCCUS AGALACTIAI Ia型或Ib型的表面多糖的CANCEROUS METASTASIS抑制剂作为主要成分
公开(公告)号：WO1997024130A1
公开(公告)日：1997-07-10
申请号：PCT/JP1995002735
申请日：1995-12-27
申请人： NGK INSULATORS, LTD. , IIJIMA, Shinji , MIYAKE, Katsuhide , YAMAMOTO, Shin , YOSHIDA, Yasuko , KAWASE, Mitsuo
发明人： NGK INSULATORS, LTD.
IPC分类号： A61K31/725
CPC分类号： C12P19/04 , A61K31/715
摘要： A medicinal composition efficaciously inhibiting cancerous metastasis which comprises a sugar chain separated from the surface of Streptococcus agalactiae Ia type and/or Ib type as the principal component. Owing to the resemblance in structure to the surface sugar chain of cancer cells, the surface sugar chain of Streptococcus agalactiae Ia type or Ib type adheres to E-secretin expressed in vascular endothelial cells when contained in the blood of a patient, and antagonistically inhibits the adhesion of vascular endothelial cells to cancer cells, thus efficaciously preventing cancerous metastasis.
摘要翻译：一种有效抑制癌转移的药物组合物，其包含从无乳链球菌Ia型和/或Ib型作为主要成分的表面分离的糖链。由于与癌细胞的表面糖链的结构相似，当包含在患者血液中时，无乳链球菌Ia型或Ib型的表面糖链粘附在血管内皮细胞中表达的E-分泌素，并且拮抗剂抑制血管内皮细胞粘附于癌细胞，从而有效预防癌转移。

19. 发明申请

WO1996040839A1 PROCESS FOR PRODUCING LOW-BOILING OIL FROM WASTE PLASTICS CONTAINING PHTHALIC POLYESTER AND/OR POLYVINYL CHLORIDE 审中-公开
标题翻译：用于生产含有PHTHALIC聚酯和/或聚氯乙烯的废塑料的低沸点油的方法
公开(公告)号：WO1996040839A1
公开(公告)日：1996-12-19
申请号：PCT/JP1996001542
申请日：1996-06-06
申请人： NGK INSULATORS, LTD. , HASHIMOTO, Kenji , MASUDA, Takao , YOSHIDA, Shuichi , IKEDA, Yuichi
发明人： NGK INSULATORS, LTD.
IPC分类号： C10G01/10
CPC分类号： C10G1/10 , C10G1/002
摘要： A low-boiling oil having a high octane number is produced from waste plastics containing phthalic polyester or polyvinyl chloride without generating any phthalic sublimate or carbon residue. The oil can be produced by thermally cracking waste plastics containing phthalic polyester and/or polyvinyl chloride in an atmosphere of steam or a mixture thereof with an inert gas. Alternatively, it can be produced by thermally cracking the waste plastics and catalytically cracking the oil and gas thus produced in an atmosphere of steam or a mixture thereof with an inert gas in the presence of a catalyst. Further, the waste plastics to be used may be dechlorinated prior to the thermal cracking, or the thermal cracking may be conducted in the presence of one or more members selected from among iron hydroxides, hydrated iron oxides and iron oxides.
摘要翻译：具有高辛烷值的低沸点油由含有邻苯二甲酸聚酯或聚氯乙烯的废塑料制成，而不产生任何邻苯二甲酸或碳残余物。油可以通过在蒸汽或其混合物与惰性气体的气氛中热裂化含有邻苯二甲酸和/或聚氯乙烯的废塑料来制备。或者，可以通过在废催化剂的热裂解和在惰性气体的催化剂存在下，在蒸气或其混合物的气氛中产生的油和气体进行催化裂化来制备。此外，所使用的废塑料可以在热裂化之前脱氯，或者可以在一种或多种选自氢氧化铁，水合铁氧化物和氧化铁中的成员的存在下进行热裂解。

20. 发明申请

WO1995024258A1 METHOD FOR REMOVING NITROUS OXIDE 审中-公开
标题翻译：去除氧化镍的方法
公开(公告)号：WO1995024258A1
公开(公告)日：1995-09-14
申请号：PCT/JP1995000363
申请日：1995-03-07
申请人： NGK INSULATORS, LTD. , MURAKAMI, Yuichi , HATTORI, Tadashi , SATSUMA, Atsushi , MURAMATSU, Hideaki , TOKURA, Katushiro , MORI, Takayuki
发明人： NGK INSULATORS, LTD.
IPC分类号： B01D53/36
CPC分类号： B01D53/8628 , B01J23/14 , B01J37/0244 , Y02C20/10
摘要： Gas is made to contact a catalyst layer containing tin oxide (IV) as a main constituent at a reaction temperature of 250 DEG C or higher, preferably 350 DEG C or higher so as to directly decompose nitrous oxide contained in gas. In particular, a method for removing nitrous oxide is provided in which in a case where cobalt compound (II) is added to the catalyst layer, nitrous oxide can effectively be reduced by causing the catalyst to contact gas at a reaction temperature of 200 DEG C or higher, preferably 300 DEG C or higher. This method makes it possible to remove positively at low costs nitrous oxide which cannot effectively be removed in a conventional method. This method can be used to remove nitrous oxide contained in exhaust gas from a sludge incinerator or a boiler pulverized coal combustion furnace.
摘要翻译：使气体在250℃以上，优选350℃以上的反应温度下与含氧化锡（IV）作为主要成分的催化剂层接触，以直接分解气体中所含的一氧化二氮。特别地，提供一种除去一氧化二氮的方法，其中在催化剂层中加入钴化合物（II）的情况下，通过使催化剂在200℃的反应温度下接触气体，可以有效地降低一氧化二氮以上，优选为300℃以上。该方法可以以常规方法不能有效除去的低成本一氧化二氮积极地去除。该方法可用于从污泥焚烧炉或锅炉粉煤燃烧炉中除去废气中含有的一氧化二氮。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式