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11. 发明授权

US4823353A Semiconductor laser array apparatus 失效
标题翻译：半导体激光阵列装置
公开(公告)号：US4823353A
公开(公告)日：1989-04-18
申请号：US106740
申请日：1987-10-08
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/028 , H01S5/40
CPC分类号： H01S5/028 , H01S5/4031 , H01S5/4081
摘要： A semiconductor laser array apparatus comprising a semiconductor laser array device having a plurality of active waveguides in a parallel manner with an optical phase-coupling between the adjacent waveguides and an optical phase-shifting means attaining a 180.degree. phase-shift between the adjacent laser beams emitted from the adjacent waveguides of the laser array device, the phase-shifting means being disposed in the vicinity of one of the facets of the laser array device.
摘要翻译：一种半导体激光器阵列装置，包括半导体激光器阵列器件，其具有与相邻波导之间的光学相位并联的多个有源波导和在相邻激光束之间达到180°相移的光学相移装置从激光阵列器件的相邻波导发出的相移装置设置在激光阵列器件的其中一个面附近。

12. 发明授权

US4817104A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4817104A
公开(公告)日：1989-03-28
申请号：US795525
申请日：1985-11-06
申请人： Mototaka Taneya , Seiki Yano , Sadayoshi Matsui , Mitsuhiro Matsumoto
发明人： Mototaka Taneya , Seiki Yano , Sadayoshi Matsui , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/10 , H01S5/40 , H01S3/19 , H01S3/08
CPC分类号： H01S5/4031 , H01S5/10
摘要： A semiconductor laser array device comprising a structure for minimizing the dependence of the longitudinal mode of laser oscillation upon the driving electric current, thereby facilitating laser light oscillation at a high output power with a zero degrees phase shift between adjacent lasing elements.
摘要翻译：一种半导体激光器阵列器件，包括用于最小化激光振荡的纵向模式对驱动电流的依赖性的结构，从而促进在相邻的激光元件之间具有零度相移的高输出功率下的激光振荡。

13. 发明授权

US4791651A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4791651A
公开(公告)日：1988-12-13
申请号：US052686
申请日：1987-05-20
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S3/082 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/40 , H01S3/19
CPC分类号： H01S5/20 , H01S3/082 , H01S5/4068 , H01S5/2232 , H01S5/2234 , H01S5/24
摘要： A semiconductor laser array device comprising an active layer, a plurality of lasing filaments for laser oscillation, a refractive-index guiding structure constituting said lasing filaments, and a striped electrode structure constituting a current path, the width of which is narrower than the overall width of said lasing filaments.
摘要翻译：一种半导体激光器阵列器件，包括有源层，用于激光振荡的多个激光灯丝，构成所述激光灯丝的折射率引导结构，以及构成电流路径的条纹电极结构，其宽度比总宽度窄的所述激光丝。

14. 发明授权

US4730326A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4730326A
公开(公告)日：1988-03-08
申请号：US773966
申请日：1985-09-09
申请人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto , Saburo Yamamoto , Seiki Yano
发明人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto , Saburo Yamamoto , Seiki Yano
IPC分类号： H01S5/40 , H01S3/19
CPC分类号： H01S5/4031
摘要： A semiconductor laser array device comprising a plurality of index-guided lasing filaments formed in an active layer in a parallel manner, and an electrical current injection portion formed on the upper face of grown layers therefor the flat shape of the electrical current injection portion is asymmetrical with respect to any line which is parallel to the lasing filaments.
摘要翻译：一种半导体激光器阵列器件，包括以平行方式形成在有源层中的多个折射率引导的激光长丝，以及形成在生长层的上表面上的电流注入部分，电流注入部分的平坦形状是不对称的相对于与激光丝平行的任何线。

15. 发明授权

US4890293A Semiconductor laser device 失效
公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.

16. 发明授权

US4870651A Semiconductor light-emitting apparatus 失效
标题翻译：半导体发光装置
公开(公告)号：US4870651A
公开(公告)日：1989-09-26
申请号：US127836
申请日：1987-12-02
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/14 , H01S5/40
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.
摘要翻译：一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件，其与半导体激光器阵列器件实现光学相位耦合，由此来自半导体激光器阵列的光束器件经由模拟混合器件从半导体发光装置的发光面发射，从而获得具有最小纹波率的近场图案对光强度的影响。

17. 发明授权

US4799225A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4799225A
公开(公告)日：1989-01-17
申请号：US104865
申请日：1987-10-05
申请人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
发明人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.
摘要翻译：一种具有波导结构的半导体激光阵列器件，包括由多个平行波导构成的第一阵列部分; 由多个平行波导构成的第二阵列部分; 第三阵列部分，其由多个对称分支波导构成，所述多个对称分支波导光学连接所述第一阵列部分的平行波导的端部; 以及第四阵列部分，其由多个对称分支波导组成，所述多个对称分支波导光学连接到所述第二阵列部分的平行波导的另一端，所述第四阵列部分的所述对称分支波导的端部满足一个激光发射所述激光阵列器件的所述对称分支波导开始与相邻对称分支波导光学组合的面。

18. 发明授权

US4772082A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4772082A
公开(公告)日：1988-09-20
申请号：US876223
申请日：1986-06-19
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/028 , H01S5/40 , G02B6/10 , H01S3/19
CPC分类号： H01S5/028 , H01S5/4068
摘要： A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflective index of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
摘要翻译：一种半导体激光器阵列器件，包括以平行方式彼此光学和平滑地耦合的多个折射率导向的有源波导，其中所述半导体激光器阵列器件的至少一个刻面的对应于所述有源波导的中心区域的反射率高于对应于所述有源波导的所述面的其他区域的面积。

19. 发明授权

US4752932A Branching optical waveguide for an index-guided semiconductor laser device 失效
标题翻译：用于折射率引导半导体激光器件的分支光波导
公开(公告)号：US4752932A
公开(公告)日：1988-06-21
申请号：US791122
申请日：1985-10-24
申请人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya
发明人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/4068
摘要： A semiconductor laser device uses an optical waveguide which is in a single mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form two branch waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser light and which are parallel to each other near the facets, thereby attaining a 0.degree.-phase shift between light waves propagated in the two branch waveguides and resulting in laser lights with a 0.degree.-phase shift therebetween.
摘要翻译：半导体激光器件使用在其中心部分处于单一模式的光波导，并且在其两端部分别处于分支模式，以形成相对于激光器的波导方向对称定位的两个分支波导光，并且在小平面附近彼此平行，从而在两个分支波导中传播的光波之间获得0°相移，并产生其间具有0°相移的激光。

20. 发明授权

US4747109A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4747109A
公开(公告)日：1988-05-24
申请号：US881096
申请日：1986-07-02
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui , Seiki Yano
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui , Seiki Yano
IPC分类号： H01S5/00 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： H01S5/10 , H01S5/4031
摘要： The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogonally to the facets of the laser device.
摘要翻译：激光装置具有多个平行的折射率波导。波导的中间区域与垂直于激光装置的两个面的每个面的线倾斜成一定角度。波导的端部与激光器件的刻面正交定向。

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