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11. 发明申请

US20050122568A1 Three-dimensional photonic crystal and process for production thereof as well as probe used therefor 有权
标题翻译：三维光子晶体及其生产方法以及用于其的探针
公开(公告)号：US20050122568A1
公开(公告)日：2005-06-09
申请号：US11033296
申请日：2005-01-12
申请人： Kanna Aoki , Hideki Hirayama , Yoshinobu Aoyagi , Hideki Miyazaki
发明人： Kanna Aoki , Hideki Hirayama , Yoshinobu Aoyagi , Hideki Miyazaki
IPC分类号： G02B6/12 , G01R31/02 , G02B6/122 , G02B6/13 , G02B26/00 , G02F1/00 , H01L33/28 , H01L33/32 , H01L33/34 , H01L33/44
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/13
摘要： The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.
摘要翻译：本发明提供一种实用有效的三维光子晶体及其制造方法及其用途的探针，其中三维光子晶体包括多个二维光子晶体板，每个二维光子晶体板均设有通孔，不同类型的二维光子晶体; 多个定位构件，位于多个二维光子晶体板的上述通孔中; 并且上述定位构件位于要层叠的多个二维光子晶体板中彼此相邻的二维光子晶体板的通孔中，使得多个二维光子晶体板获得响应于光的波长的周期性结构。

12. 发明授权

US08698168B2 Semiconductor device having aluminum nitride layer with void formed therein 有权
标题翻译：其中形成有空隙的氮化铝层的半导体器件
公开(公告)号：US08698168B2
公开(公告)日：2014-04-15
申请号：US13039978
申请日：2011-03-03
申请人： Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
发明人： Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
IPC分类号： H01L27/15
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02658 , H01L33/007
摘要： A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).
摘要翻译：提供一种晶体生长方法，其可以抑制位错和裂纹的发展以及基板中的翘曲。 III族氮化物半导体的晶体生长方法具有以下步骤：加热硅衬底; 以及通过向加热的硅衬底上预先给予至少含有TMA（三甲基铝）的气体，在衬底表面上形成凹陷结构的步骤。

13. 发明授权

US07691202B2 Ultraviolet light-emitting device in which p-type semiconductor is used 有权
标题翻译：使用p型半导体的紫外线发光装置
公开(公告)号：US07691202B2
公开(公告)日：2010-04-06
申请号：US11907280
申请日：2007-10-10
申请人： Hideki Hirayama , Sohachi Iwai , Yoshinobu Aoyagi
发明人： Hideki Hirayama , Sohachi Iwai , Yoshinobu Aoyagi
IPC分类号： C30B25/14
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
摘要翻译：本发明的目的是提供一种紫外线发光装置，其中使用在紫外线区域具有高导电性和发光峰值并有效发光的p型半导体。 p型半导体是通过在预定类型的晶体原料之前同时或者开始供应预定类型的晶体原料之后提供p型杂质原料而制备的，此外，除了开始供应比预定类型的晶体原料之外的其它类型的晶体原料在一个循环中的材料，其中在通过以脉冲方式交替提供多种类型的晶体原料进行晶体生长的情况下，一次性地供给多种类型的晶体原料的所有类型的晶体原料。

14. 发明授权

US06865005B2 Three-dimensional photonic crystal 失效
标题翻译：三维光子晶体
公开(公告)号：US06865005B2
公开(公告)日：2005-03-08
申请号：US10058337
申请日：2002-01-30
申请人： Kanna Aoki , Hideki Hirayama , Yoshinobu Aoyagi , Hideki Miyazaki
发明人： Kanna Aoki , Hideki Hirayama , Yoshinobu Aoyagi , Hideki Miyazaki
IPC分类号： G02B6/12 , G01R31/02 , G02B6/122 , G02B6/13 , G02B26/00 , G02F1/00 , H01L33/28 , H01L33/32 , H01L33/34 , H01L33/44
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/13
摘要： The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.
摘要翻译：本发明提供一种实用有效的三维光子晶体及其制造方法及其用途的探针，其中三维光子晶体包括多个二维光子晶体板，每个二维光子晶体板均设有通孔，不同类型的二维光子晶体; 多个定位构件，位于多个二维光子晶体板的上述通孔中; 并且上述定位构件位于要层叠的多个二维光子晶体板中彼此相邻的二维光子晶体板的通孔中，使得多个二维光子晶体板获得响应于光的波长的周期性结构。

15. 发明授权

US4131506A Method of producing echelette gratings 失效
标题翻译：制作小阶梯光栅的方法
公开(公告)号：US4131506A
公开(公告)日：1978-12-26
申请号：US750914
申请日：1976-12-15
申请人： Susumu Namba , Yoshinobu Aoyagi
发明人： Susumu Namba , Yoshinobu Aoyagi
IPC分类号： G01J3/18 , G02B5/18 , H01L21/306 , B44C1/22 , C03C25/06
CPC分类号： G02B5/1857
摘要： Disclosed is a method of producing echelette gratings using a beam of electrically charged particles to bomber a masked substrate. The shape and blazed angle ".delta." of the echelette grating is controlled by putting the substrate at a selected slant angle ".theta." with regard to the beam of electrically charged particles.
摘要翻译：公开了一种使用带电粒子束来生产小阶梯光栅来轰击被掩蔽的基底的方法。通过将衬底相对于带电粒子的束放置在选定的倾斜角“θ”来控制小阶梯光栅的形状和闪耀角度“delta”。

16. 发明申请

US20120007039A1 CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：晶体生长方法和半导体器件
公开(公告)号：US20120007039A1
公开(公告)日：2012-01-12
申请号：US13039978
申请日：2011-03-03
申请人： Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
发明人： Yoshihiro Ueta , Masataka Ohta , Yoshinobu Aoyagi , Misaichi Takeuchi
IPC分类号： H01L33/04 , H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02658 , H01L33/007
摘要： A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).
摘要翻译：提供一种晶体生长方法，其可以抑制位错和裂纹的发展以及基板中的翘曲。 III族氮化物半导体的晶体生长方法具有以下步骤：加热硅衬底; 以及通过向加热的硅衬底上预先给予至少含有TMA（三甲基铝）的气体，在衬底表面上形成凹陷结构的步骤。

17. 发明授权

US07675069B2 InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same 有权
标题翻译： InAlGaN在紫外线短波长区域中发光，其制备方法以及使用其的紫外线发光元件
公开(公告)号：US07675069B2
公开(公告)日：2010-03-09
申请号：US09790660
申请日：2001-02-23
申请人： Hideki Hirayama , Yoshinobu Aoyagi
发明人： Hideki Hirayama , Yoshinobu Aoyagi
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075
摘要： For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.
摘要翻译：为了在具有360nm以下的波长的紫外线短波长区域内发光，将其配置在InAlGaN中，使得In的组成比为2％〜20％，Al的组成比为 10％〜90％，In，Al，Ga的组成比为100％。

18. 发明授权

US06291796B1 Apparatus for CFC-free laser surface cleaning 失效
标题翻译：无CFC激光表面清洗设备
公开(公告)号：US06291796B1
公开(公告)日：2001-09-18
申请号：US08434175
申请日：1995-05-01
申请人： YongFeng Lu , Yoshinobu Aoyagi
发明人： YongFeng Lu , Yoshinobu Aoyagi
IPC分类号： B23K2600
CPC分类号： B08B7/0042 , B23K26/066
摘要： An apparatus for dry cleaning a surface includes a laser generator, a laser beam homogenizer, an aperture and a lens that are controlled by a CPU. The laser is preferably a KrF excimer laser although any laser capable of generating a pulsed output in the ultraviolet spectrum may be used. The lens is preferably a plano-convex lens. Articles to be cleaned are placed on a conveyor that transports the article through the laser beam. The CPU can store parameters for optimizing removal of a particular contaminant. These parameters may include the frequency of the pulse beam generated by the laser, the shape of the aperture, the position of the lens is controlled by a stage, and the speed of the conveyor belt.
摘要翻译：用于干洗表面的设备包括由CPU控制的激光发生器，激光束均化器，孔径和透镜。尽管可以使用能够在紫外光谱中产生脉冲输出的任何激光器，但是激光器优选为KrF准分子激光器。透镜优选为平凸透镜。要清洁的物品放置在通过激光束传送物品的输送机上。 CPU可以存储用于优化去除特定污染物的参数。这些参数可以包括由激光器产生的脉冲光束的频率，孔的形状，透镜的位置由一个台阶控制，以及传送带的速度。

19. 发明授权

US5832052A X-ray microscope 失效
标题翻译： X光显微镜
公开(公告)号：US5832052A
公开(公告)日：1998-11-03
申请号：US669709
申请日：1996-06-24
申请人： Hideo Hirose , Kozo Ando , Yoshinobu Aoyagi , Tamio Hara
发明人： Hideo Hirose , Kozo Ando , Yoshinobu Aoyagi , Tamio Hara
IPC分类号： G21K7/00
CPC分类号： G21K7/00
摘要： An X-ray microscope utilizing X-rays radiating from a laser-irradiated target so as to form an X-ray image of a specimen placed in a sample cell, the X-ray microscope includes a target for radiating X-rays when the same is irradiated with a laser beam, a sample cell for housing a specimen, the sample cell provided near the surface of target placed opposite to where the target is irradiated with the laser beam, and a detector for forming an X-ray image of the specimen by X-ray penetration, wherein the target, the sample cell and the detector are unified in a unit. The unit is placed at a place where the laser beam is irradiated to the target. A spacer is provided between the target and the sample cell, wherein the size of the spacer is determined depending on a distance between the specimen and the target. With this construction, this facilitates the fabrication of the unit. The unit is placed in the miniature vacuum chamber which comprises a division for housing the unit, and a space provided toward the target. And the vacuum chamber housing the unit is placed in an X-ray microscope.
摘要翻译：一种利用从激光照射对象物放射的X射线以形成放置在样品池中的试样的X射线图像的X射线显微镜，所述X射线显微镜包括：X射线显微镜照射激光束的样品池，用于容纳样品的样品池，设置在与靶被照射激光束相对的靶的表面附近的样品池，以及用于形成试样的X射线图像的检测器通过X射线穿透，其中靶，样品池和检测器以一个单元统一。该单元放置在激光束照射到目标的地方。在靶和样品池之间设置间隔物，其中间隔物的尺寸取决于样品和靶之间的距离。利用这种结构，这有利于单元的制造。该单元被放置在微型真空室中，其包括用于容纳该单元的分隔件和朝向该目标物提供的空间。将该单元的真空室放置在X射线显微镜中。

20. 发明申请

US20080042162A1 Ultraviolet light-emitting device in which p-type semiconductor is used 有权
标题翻译：使用p型半导体的紫外线发光装置
公开(公告)号：US20080042162A1
公开(公告)日：2008-02-21
申请号：US11907280
申请日：2007-10-10
申请人： Hideki Hirayama , Sohachi Iwai , Yoshinobu Aoyagi
发明人： Hideki Hirayama , Sohachi Iwai , Yoshinobu Aoyagi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
摘要翻译：本发明的目的是提供一种紫外线发光装置，其中使用在紫外线区域具有高导电性和发光峰值并有效发光的p型半导体。 p型半导体是通过在预定类型的晶体原料之前同时或者开始供应预定类型的晶体原料之后提供p型杂质原料而制备的，此外，除了开始供应比预定类型的晶体原料之外的其它类型的晶体原料在一个循环中的材料，其中在通过以脉冲方式交替提供多种类型的晶体原料进行晶体生长的情况下，一次性地供给多种类型的晶体原料的所有类型的晶体原料。

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