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11. 发明授权

US5701321A Semiconductor laser producing short wavelength light 失效
标题翻译：半导体激光产生短波长光
公开(公告)号：US5701321A
公开(公告)日：1997-12-23
申请号：US623378
申请日：1996-03-28
申请人： Norio Hayafuji , Zempei Kawazu
发明人： Norio Hayafuji , Zempei Kawazu
IPC分类号： H01S5/00 , H01L27/15 , H01S5/02 , H01S5/026 , H01S5/183 , H01S5/323 , H01S3/19 , H01S3/08
CPC分类号： H01S5/18305 , H01L27/156 , H01L33/007 , H01S5/0207 , H01S5/0213 , H01S5/18369 , H01S5/32341
摘要： A semiconductor laser includes an electrically insulating substrate having an opening; a first conductivity type first contact layer within the opening; a laminated semiconductor layer structure on the first contact layer and comprising a first cladding layer, an active layer, a second cladding layer, and a second contact layer wherein the first contact layer includes an aperture within the opening; a first electrode disposed on the electrically insulating substrate and extending to and contacting the first contact layer; and a second electrode in electrical contact with the second contact layer. The substrate is preferably sapphire, MgO, and spinel and the semiconductor layers are preferably GaN materials so that the laser emits short wavelength light. An electrode makes direct, reliable contact to the first cladding layer through an opening in the electrically insulating substrate without the need of mechanically working or etching the substrate.
摘要翻译：半导体激光器包括具有开口的电绝缘基板; 在开口内的第一导电类型的第一接触层; 在所述第一接触层上的层叠半导体层结构，包括第一覆层，有源层，第二覆层和第二接触层，其中所述第一接触层在所述开口内包括孔; 第一电极，设置在所述电绝缘基板上并延伸到所述第一接触层并接触所述第一接触层; 以及与所述第二接触层电接触的第二电极。基板优选为蓝宝石，MgO和尖晶石，半导体层优选为GaN材料，使得激光发射短波长的光。电极通过电绝缘衬底中的开口直接，可靠地接触第一包层，而不需要机械加工或蚀刻衬底。

12. 发明授权

US5677922A Semiconductor laser with crystalline window layer 失效
标题翻译：具有结晶窗层的半导体激光器
公开(公告)号：US5677922A
公开(公告)日：1997-10-14
申请号：US589462
申请日：1996-01-22
申请人： Norio Hayafuji , Takashi Motoda
发明人： Norio Hayafuji , Takashi Motoda
IPC分类号： H01L21/318 , H01S5/00 , H01S5/02 , H01S5/16 , H01S5/323 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/164 , H01S5/0201 , H01S5/32325 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.
摘要翻译：根据本发明的半导体激光器包括具有第一晶体取向的表面的化合物半导体衬底; 包括依次设置在半导体衬底的表面上的第一覆层，有源层和第二覆层，并且包括横向于半导体衬底的表面并且具有第二晶体取向的第一和第二窗表面; 设置在窗表面上的掺杂晶体半导体窗口层; 以及分别设置在结晶层和半导体衬底上的电极。

13. 发明授权

US5420066A Method for producing semiconductor laser device using etch stop layer 失效
标题翻译：使用蚀刻停止层制造半导体激光器件的方法
公开(公告)号：US5420066A
公开(公告)日：1995-05-30
申请号：US267211
申请日：1994-07-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01L21/302
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译：根据本发明，在连续进行晶体生长以产生至少第一导电型下包层，有源层，AlAs组成比为0.38至0.6的AlGaAs的第二导电型第一上包层之后，具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层有机酸和过氧化氢，从而形成一个脊。结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。

14. 发明授权

US5357535A Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer 失效
标题翻译：半导体激光器包括富铝的AlGaAs蚀刻停止层
公开(公告)号：US5357535A
公开(公告)日：1994-10-18
申请号：US1547
申请日：1993-01-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译：根据本发明，在连续进行晶体生长以产生至少第一导电型下包层和有源层之后，具有0.38至0.6的AlAs组成比的AlGaAs的第二导电型第一上包层，具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层有机酸和过氧化氢，从而形成一个脊。结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。

15. 发明授权

US5760426A Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 失效
标题翻译：包括硅衬底，GaAs层和GaN层的异质外延半导体器件
公开(公告)号：US5760426A
公开(公告)日：1998-06-02
申请号：US680850
申请日：1996-07-16
申请人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
发明人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
IPC分类号： H01L21/203 , H01L21/205 , H01L29/201 , H01L29/267 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01L29/26
CPC分类号： H01L29/267 , H01L29/201 , H01L33/007
摘要： A semiconductor device includes an Si substrate, a stress absorbing layer of GaAs and disposed on the Si substrate, a buffer layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the stress absorbing layer, and a compound semiconductor layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the buffer layer. Therefore, the buffer layer protects the GaAs stress absorbing layer from high temperatures during the formation of the compound semiconductor layer, whereby the stress absorbing layer is prevented from decomposition. As a result, a stress due to lattice mismatch or thermal stress between the Si substrate and the compound semiconductor layer is absorbed in the GaAs stress absorbing layer having a lowest bulk modulus, whereby a compound semiconductor layer with reduced dislocations may be grown on the buffer layer and bending of the Si substrate prevented.
摘要翻译：半导体器件包括Si衬底，GaAs的应力吸收层，并且设置在Si衬底上，具有Al x Ga 1-x-y In y N（0≤x≤1,0< / = 1）并且设置在应力吸收层上，以及具有Al x Ga 1-x-y In y N（0≤x≤1,0≤y≤1）组成的化合物半导体层并且被置于缓冲层。因此，缓冲层在形成化合物半导体层期间保护GaAs应力吸收层免受高温的影响，防止应力吸收层分解。结果，在Si衬底和化合物半导体层之间由于晶格失配或热应力引起的应力被吸收在具有最低体积弹性模量的GaAs应力吸收层中，从而可以在缓冲区上生长具有减少的位错的化合物半导体层防止了Si衬底的层和弯曲。

16. 发明授权

US5729030A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5729030A
公开(公告)日：1998-03-17
申请号：US653245
申请日：1996-05-24
申请人： Yoshitsugu Yamamoto , Norio Hayafuji
发明人： Yoshitsugu Yamamoto , Norio Hayafuji
IPC分类号： H01L29/205 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/201 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01L29/201 , H01L29/7783 , H01S5/323 , H01S5/34 , H01S5/2205 , H01S5/223 , H01S5/2231 , H01S5/3211 , H01S5/32308 , H01S5/32333 , H01S5/32341 , H01S5/3235 , H01S5/3432
摘要： A semiconductor device includes an InP substrate; a channel layer in which electrons, as charge carriers, travel; and an Al.sub.x1 Ga.sub.1-x1 As.sub.y1 P.sub.z1 Sb.sub.1-y1-z1 (0.ltoreq.x1.ltoreq.1, 0.ltoreq.y1
摘要翻译：半导体器件包括InP衬底; 电子作为电荷载流子的沟道层; 以及用于向沟道层提供电子的Al x Ga 1-x As y 1 P z 1 Sb 1-y 1-z 1（0 <= = 1，...，0 ）电子供应层。电子供给层的电子亲和力小于沟道层的电子亲和力，并且掺杂有产生n型导电性的掺杂剂杂质。由于n型AlGaAsPSb是热稳定的，因此在350℃左右的热处理不会改变其电特性，导致热稳定性和高可靠性的HEMT，其特性在制造和操作期间几乎不随时间变化。此外，在设计器件时，容易产生包括电子供给层和沟道层并且具有期望的能带结构的异质结构。

17. 发明授权

US5682045A Method of fabricating semiconductor device and semiconductor device fabricated thereby 失效
标题翻译：制造半导体器件的方法和由此制造的半导体器件
公开(公告)号：US5682045A
公开(公告)日：1997-10-28
申请号：US525175
申请日：1995-09-08
申请人： Norio Hayafuji , Yoshitsugu Yamamoto
发明人： Norio Hayafuji , Yoshitsugu Yamamoto
IPC分类号： H01L29/812 , H01L21/285 , H01L21/324 , H01L21/335 , H01L21/338 , H01L29/778 , H01L31/0328
CPC分类号： H01L29/66462 , H01L21/28587 , H01L21/3245
摘要： An Si-doped AlInAs layer and an intrinsic AlInAs layer are successively grown on a semi-insulating InP substrate in a molecular beam epitaxy chamber. The sample is then heat-treated in a nitrogen ambient at 400.degree. C. for 18 minutes so that electrical characteristics of the sample are deteriorated because of the infiltration of fluorine into the Si-doped AlInAs layer. The sample is then placed in the molecular beam epitaxy chamber and reheat-treated in an ultra-high vacuum at 400.degree. C. for seven minutes and the fluorine is removed.
摘要翻译：在分子束外延室中的半绝缘InP衬底上依次生长Si掺杂的AlInAs层和本征AlInAs层。然后将样品在氮气环境中在400℃下热处理18分钟，使得样品的电特性由于氟渗入Si掺杂的AlInAs层而劣化。然后将样品置于分子束外延室中，并在400℃的超高真空中再加热处理7分钟，并除去氟。

18. 发明授权

US5387544A Method of making a semiconductor device including carbon as a dopant 失效
标题翻译：制造包含碳作为掺杂剂的半导体器件的方法
公开(公告)号：US5387544A
公开(公告)日：1995-02-07
申请号：US216022
申请日：1994-03-21
申请人： Norio Hayafuji
发明人： Norio Hayafuji
IPC分类号： H01L21/205 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01S5/00 , H01R21/22
CPC分类号： H01L21/0262 , H01L21/02546 , H01L21/02576 , H01L21/02579 , Y10S438/925
摘要： While producing a III-V compound semiconductor layer, carbon is added to group III and V elements to control the p type conductivity of the semiconductor layer, forming a p type region. Then, a small amount of n type dopant is added to the group III and V elements together with the carbon to control the n type conductivity of the semiconductor layer, forming an n type region. Therefore, a sharp and precisely-controlled doping profile is obtained in the vicinity of the p-n junction, resulting in a semiconductor device having high initial-performance and high reliability.
摘要翻译：在制造III-V族化合物半导体层的同时，将碳添加到III族和V族元素中以控制半导体层的p型导电性，形成p型区域。然后，少量的n型掺杂剂与碳一起添加到III族和V族元素中，以控制半导体层的n型导电性，形成n型区域。因此，在p-n结附近获得了尖锐且精确控制的掺杂分布，导致具有高初始性能和高可靠性的半导体器件。

19. 发明授权

US5100480A Solar cell and method for manufacturing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5100480A
公开(公告)日：1992-03-31
申请号：US606853
申请日：1990-10-31
申请人： Norio Hayafuji
发明人： Norio Hayafuji
IPC分类号： H01L31/042 , H01L27/142 , H01L31/0224 , H01L31/0352 , H01L31/04
CPC分类号： H01L31/022425 , H01L31/035281 , H01L31/0475 , Y02E10/50
摘要： A solar cell includes an insulating or semi-insulating substrate having a pair of through holes, an n type semiconductor layer disposed on the front surface of the substrate, and a p type semiconductor layer disposed on the substrate in the first hole and on the n type semiconductor layer. An n side electrode is formed on the surface of the n type semiconductor layer in the second hole and also on a part of the back surface of the substrate. A p side electrode is formed on the surface of the p type semiconductor layer in the first hole and also on the back surface of the substrate. In connecting a plurality of solar cells in a wafer in series, a trench reaching the substrate is formed between adjacent solar cells.

20. 发明申请

US20050085035A1 Heterojunction bipolar transistor and manufacturing method making the same 审中-公开
标题翻译：异质结双极晶体管和制造方法相同
公开(公告)号：US20050085035A1
公开(公告)日：2005-04-21
申请号：US10687648
申请日：2003-10-20
申请人： Chih-Chiang Shen , Chang-Jung Chu , Rui-Huang Cheng , Yong-Yin Chen , Norio Hayafuji , Chin-Kun Peng
发明人： Chih-Chiang Shen , Chang-Jung Chu , Rui-Huang Cheng , Yong-Yin Chen , Norio Hayafuji , Chin-Kun Peng
IPC分类号： H01L21/331 , H01L29/737 , H01L29/739
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A method for improving a performance of a heterojunction bipolar transistor is provided. The method includes steps of providing a substrate; forming a first at least one semiconductor layer on the substrate; forming a second at least one semiconductor layer on the first at least one semiconductor layer; and inserting a thermal treatment process within the second at least one semiconductor layer so as to improve a performance of the heterojuntion bipolar transistor. Furthermore, the thermal treatment process is performed at a temperature ranged from 300° C. to 800° C.
摘要翻译：提供了一种用于改善异质结双极晶体管的性能的方法。该方法包括提供衬底的步骤; 在所述衬底上形成第一至少一个半导体层; 在所述第一至少一个半导体层上形成第二至少一个半导体层; 以及在所述第二至少一个半导体层内插入热处理工艺，以便提高所述异质双极晶体管的性能。此外，热处理过程在300℃至800℃的温度下进行。

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