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11. 发明申请

US20110308725A1 ADHESIVE SHEET AND COPPER-CLAD LAMINATE 有权
标题翻译：粘合片和铜箔层压板
公开(公告)号：US20110308725A1
公开(公告)日：2011-12-22
申请号：US13221358
申请日：2011-08-30
申请人： Hisayasu Kaneshiro , Takashi Kikuchi
发明人： Hisayasu Kaneshiro , Takashi Kikuchi
IPC分类号： C09J7/02
CPC分类号： H05K1/0346 , C09J7/25 , C09J2479/086 , H05K1/0393 , H05K3/386 , H05K2201/0154 , H05K2201/068 , Y10T428/2852 , Y10T428/31678
摘要： Disclosed is an adhesive film having high dimensional stability which can be suitably used for two layer FPCs. Specifically, disclosed is an adhesive sheet composed of an insulting layer and an adhesive layer arranged on one side or both sides of the insulating layer. This adhesive sheet is characterized in that the insulating layer has a ratio E′2/E′1 between the storage elasticity modulus E′1 at 25° C. and the storage elasticity modulus E′2 at 380° C. of not more than 0.2 and a coefficient of thermal expansion in the MD direction of 5-15 ppm at 100-200° C. It is further characterized in that the change in the coefficient of thermal expansion of the adhesive sheet at 100-250° C. after heat treatment at 380° C. for 30 second under tension of 20 kg/m is not more than 2.5 ppm in the tension direction and not more than 10 ppm in the direction perpendicular to the tension direction.
摘要翻译：公开了一种具有高尺寸稳定性的粘合膜，其可以适用于两层FPC。具体地，公开了由绝缘层和布置在绝缘层的一侧或两侧上的粘合层构成的粘合片。该粘合片的特征在于绝缘层在25℃下的储能弹性模量E'1与380℃下的储能弹性模量E'2之间的比率E'2 / E'1不大于 0.2，在100〜200℃下MD方向的热膨胀系数为5〜15ppm。其特征还在于，热处理后的粘合片的热膨胀系数在100〜250℃的变化在拉伸方向下在380℃，30秒的拉伸下处理30秒，在拉伸方向垂直的方向不大于10ppm。

12. 发明申请

US20110073162A1 SUBSTRATE FOR THIN-FILM PHOTOELECTRIC CONVERSION DEVICE, THIN-FILM PHOTOELECTRIC CONVERSION DEVICE INCLUDING THE SAME, AND METHOD FOR PRODUCING SUBSTRATE FOR THIN-FILM PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：薄膜光电转换装置用基板，包括该薄膜光电转换装置的薄膜光电转换装置及其生产用于薄膜光电转换装置的基板的方法
公开(公告)号：US20110073162A1
公开(公告)日：2011-03-31
申请号：US12993467
申请日：2009-05-15
申请人： Takashi Kikuchi , Toshiaki Sasaki
发明人： Takashi Kikuchi , Toshiaki Sasaki
IPC分类号： H01L31/052 , H01L31/18 , H01L31/0232
CPC分类号： H01L31/02168 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles—ranging from 30% or more to less than 80%. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.
摘要翻译：本发明提供一种薄膜光电转换装置用基板，能够以低成本，高生产率制造具有改善特性的装置。基板包括透明基底构件，透明基底层和依次层叠在透明基底构件的一个主表面上的透明电极层。下层包括透明绝缘细颗粒和透明粘合剂，并且颗粒被分散以覆盖一个主表面，其颗粒的覆盖因子范围为30％以上至小于80％。在透明基材的另一个主表面上设置防反射层。抗反射层包括透明绝缘细颗粒和透明粘合剂，并且颗粒被分散以覆盖另一个主表面，覆盖因子大于下层。透明电极层含有通过低压CVD法沉积的氧化锌。

13. 发明授权

US07511999B1 MIS-transistor-based nonvolatile memory with reliable data retention capability 有权
标题翻译：基于MIS晶体管的非易失性存储器具有可靠的数据保留能力
公开(公告)号：US07511999B1
公开(公告)日：2009-03-31
申请号：US11935458
申请日：2007-11-06
申请人： Takashi Kikuchi
发明人： Takashi Kikuchi
IPC分类号： G11C14/00
CPC分类号： G11C14/00
摘要： A nonvolatile semiconductor memory device includes a nonvolatile memory cell including an odd number of MIS transistor pairs, each of which stores one-bit data by creating an irreversible change of transistor characteristics in one of the two paired MIS transistors, latches equal in number to the odd number of MIS transistor pairs to store the odd number of one-bit data recalled from the MIS transistor pairs, the recalling of the one-bit data of a given MIS transistor pair being performed by sensing a difference in the transistor characteristics between the two paired MIS transistors of the given MIS transistor pair, and a majority decision circuit configured to make a majority decision based on the odd number of one-bit data to determine a bit value of the nonvolatile memory cell.
摘要翻译：非易失性半导体存储器件包括非易失性存储器单元，其包括奇数个MIS晶体管对，其中的每一个通过在两个成对的MIS晶体管中的一个中产生晶体管特性的不可逆变化来存储一位数据，数量等于奇数个MIS晶体管对以存储从MIS晶体管对调用的奇数个1位数据，通过检测两个晶体管特性之间的差异来执行给定MIS晶体管对的一位数据的调用给定MIS晶体管对的成对的MIS晶体管，以及被配置为基于奇数个1位数据做出多数决定以确定非易失性存储单元的位值的多数决定电路。

14. 发明申请

US20090011223A1 Polyimide Film and Method for Production Thereof 审中-公开
标题翻译：聚酰亚胺膜及其制造方法
公开(公告)号：US20090011223A1
公开(公告)日：2009-01-08
申请号：US12087935
申请日：2007-01-04
申请人： Hisayasu Kaneshiro , Takashi Kikuchi , Shogo Fujimoto
发明人： Hisayasu Kaneshiro , Takashi Kikuchi , Shogo Fujimoto
IPC分类号： B32B27/20
CPC分类号： C08J5/18 , C08J2379/08 , H05K1/0346 , H05K1/0373 , H05K2201/0154 , H05K2201/0209 , H05K2203/0759 , Y10T428/254
摘要： Disclosed is a polyimide film which is free from coarse particles caused by aggregation of a filler, therefore, can avoid abnormal electrical discharge during a discharge treatment, repelling during application of an adhesive, and the like. Also disclosed is a method for production of the polyimide film. The method for production of the polyimide film is characterized by using an organic solvent solution containing an inorganic filling material and a first polyamic acid, wherein the organic solvent solution containing the first polyamic acid is prepared by a process comprising the steps of: 1) preparing a dispersion solution which contains the inorganic filling material and a second polyamic acid and has a viscosity of 50 to 500 poises; 2) filtering the dispersion solution; 3) mixing a prepolymer solution containing the first polyamic acid in the process of being polymerized and having a viscosity of 100 poises or lower with the filtered dispersion solution; and 4) increasing the viscosity of the mixed solution to a level ranging from 1000 to 6000 poises.
摘要翻译：公开了一种聚酰亚胺膜，其不含由填料聚集引起的粗颗粒，因此可以避免在放电处理期间的异常放电，在施加粘合剂期间的排斥等。还公开了一种聚酰亚胺薄膜的制造方法。聚酰亚胺薄膜的制造方法的特征在于，使用含有无机填充材料和第一聚酰胺酸的有机溶剂溶液，其中含有第一聚酰胺酸的有机溶剂溶液是通过以下步骤制备的：1）制备包含无机填充材料和第二聚酰胺酸并具有50至500泊的粘度的分散溶液; 2）过滤分散液; 3）在聚合过程中混合含有第一聚酰胺酸的预聚物溶液，并用过滤的分散液混合粘度为100泊或更低; 和4）将混合溶液的粘度提高至1000至6000泊。

15. 发明授权

US07460400B1 Nonvolatile memory utilizing MIS memory transistors with bit mask function 有权
标题翻译：非易失性存储器利用具有位掩码功能的MIS存储晶体管
公开(公告)号：US07460400B1
公开(公告)日：2008-12-02
申请号：US11843190
申请日：2007-08-22
申请人： Takashi Kikuchi
发明人： Takashi Kikuchi
IPC分类号： G11C16/04
CPC分类号： G11C11/419
摘要： A nonvolatile semiconductor memory device includes a plurality of control lines, a control circuit configured to assert selected ones of the control lines, and a plurality of memory cell arranged in rows and columns and including respective latch circuits and respective nonvolatile memory cells, wherein the memory cell units are configured to perform a write operation in which the latch circuits of the memory cell units on a selected row store respective bits of the input data, and are further configured to perform a store operation in which the respective bits of the input data are transferred from the latch circuits to the nonvolatile memory cells for storage therein in response to assertion of respective control lines by the control circuit, so that only one or more selective bits of the input data selected by the control circuit are stored in the nonvolatile memory cells.
摘要翻译：非易失性半导体存储器件包括多个控制线，控制电路，其被配置为断言所选择的控制线，以及布置成行和列的多个存储单元，并且包括各自的锁存电路和各个非易失性存储单元，其中所述存储器单元单元被配置为执行写操作，其中所选行上的存储单元单元的锁存电路存储输入数据的各个比特，并且还被配置为执行存储操作，其中输入数据的各个比特是响应于控制电路对各个控制线的断言，从锁存电路传送到非易失性存储单元以存储在其中，使得仅由控制电路选择的输入数据的一个或多个选择位被存储在非易失性存储单元。

16. 发明申请

US20080287642A1 Process for Production of Polyimide Film Having High Adhesiveness 有权
标题翻译：具有高粘合性的聚酰亚胺膜的制造方法
公开(公告)号：US20080287642A1
公开(公告)日：2008-11-20
申请号：US11663674
申请日：2005-09-20
申请人： Hisayasu Kaneshiro , Takashi Kikuchi
发明人： Hisayasu Kaneshiro , Takashi Kikuchi
IPC分类号： C08G73/10
CPC分类号： C08J5/18 , C08G73/101 , C08G73/1028 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/1071 , C08J2379/08 , H05K1/0346 , H05K1/0393 , H05K2201/0154 , Y10T428/2826 , Y10T428/31681
摘要： A process for the production of non-thermoplastic polyimide film whose precursor solution has high storage stability and which exhibits high adhesiveness even without expensive surface treatment, more specifically, a process fro the production of non-thermoplastic polyimide film made of a non-thermoplastic polyimide containing a block resulting from a thermoplastic polyimide which comprises (A) the step of forming a prepolymer having amino or an acid anhydride group at the end in an organic polar solvent (B) the step of synthesizing a polyimide precursor solution by using the obtained prepolymer, an acid anhydride, and a diamine in such a way as to become substantially equimolar over the whole step, and (C) the step of casting a film-forming dope containing the polyimide precursor solution and subjecting the resultant dope to chemical and/or thermal imidization, wherein the diamine and acid anhydride used in the step (A) are selected so that the reaction of both with each other in equimolar amounts can give a thermoplastic polyimide, and the polyimide precursor obtained in the step (B) is a precursor of a non-thermoplastic polyimide.
摘要翻译：一种生产非热塑性聚酰亚胺膜的方法，其前体溶液具有高储存稳定性，即使没有昂贵的表面处理也显示出高粘附性，更具体地说，涉及一种由非热塑性聚酰亚胺制成的非热塑性聚酰亚胺膜的方法含有由热塑性聚酰亚胺产生的嵌段，其包含（A）在有机极性溶剂（B）中形成末端具有氨基或酸酐基的预聚物的步骤，通过使用所得预聚物合成聚酰亚胺前体溶液的步骤，酸酐和二胺，以使其在整个步骤中变得基本上等摩尔，（C）将含有聚酰亚胺前体溶液的成膜原液浇铸并将所得的涂料进行化学和/或其中在步骤（A）中使用的二胺和酸酐被选择为使得两者彼此的反应在等摩尔量可以得到热塑性聚酰亚胺，并且在步骤（B）中获得的聚酰亚胺前体是非热塑性聚酰亚胺的前体。

17. 发明授权

US07451642B2 System and method for quantitative analysis of cause of tire trouble 有权
标题翻译：轮胎故障原因的定量分析系统及方法
公开(公告)号：US07451642B2
公开(公告)日：2008-11-18
申请号：US11662663
申请日：2005-09-12
申请人： Yuki Hara , Takashi Kikuchi , Junichi Kase
发明人： Yuki Hara , Takashi Kikuchi , Junichi Kase
IPC分类号： G01M17/02
CPC分类号： G07C5/085 , G07C5/008 , G08G1/205
摘要： There is provided a system and method for quantitative analysis of a cause of tire trouble capable of quantitatively analyzing whether the tire trouble is caused by the tire itself or in a matter of harshness of a tire using condition in light of not only a force acting on a tire mounted on a running vehicle but also harshness of a tire using condition such as a traveling speed of the vehicle, level difference of a road surface, a curve and gradient information. The method for quantitative analysis of a cause of tire trouble according to the present invention is characterized by comprising the steps of receiving positional data of a running vehicle from the GPS, simultaneously measuring triaxial accelerations which are accelerations acting on the running vehicle in back-and-forward, right-and-left and up-and-down directions while time synchronizing with the received data, quantitatively analyzing harshness of a tire using condition from the received positional data and the triaxial acceleration data, and displaying an analysis result.
摘要翻译：提供了一种用于轮胎故障原因的定量分析的系统和方法，能够定量分析轮胎本身是否引起轮胎故障，或者轮胎使用条件的严酷性，不仅仅是作用于轮胎的力使用车辆的行驶速度，路面的水平差，曲线和坡度信息等条件，安装在行驶车辆上的轮胎，而且轮胎的粗糙度。根据本发明的用于定量分析轮胎故障的原因的方法的特征在于包括以下步骤：从GPS接收行驶车辆的位置数据，同时测量三轴加速度，其是作用在行驶车辆上的加速度，同时与所接收的数据同步，根据接收到的位置数据和三轴加速度数据定量分析轮胎的粗糙度，并显示分析结果。

18. 发明授权

US07450788B1 Optical splitter/coupler and optical communication system 有权
公开(公告)号：US07450788B1
公开(公告)日：2008-11-11
申请号：US11809657
申请日：2007-06-01
申请人： Roshan Thapliya , Takashi Kikuchi , Shigetoshi Nakamura
发明人： Roshan Thapliya , Takashi Kikuchi , Shigetoshi Nakamura
IPC分类号： G02F1/295
CPC分类号： G02B6/2813 , G02F1/3136 , G02F2001/217 , G02F2201/06
摘要： An optical splitter/coupler has: a multimode waveguide having an electrooptic effect, and propagating light in a multimode; one incident waveguide propagating light in a single mode, and inputting the light to the multimode waveguide; one pair of emitting waveguides guiding-out, in a single mode, lights which have propagated-in through the multimode waveguide; at least one pair of individual electrodes provided so as to be positioned in vicinities of respective side edges on one surface of the multimode waveguide; and a ground electrode provided on another surface, wherein the multimode waveguide has a length such that 3(n+1) bright spots arise at a central portion and at both side edge portions due to incident light, the individual electrodes are provided at positions corresponding to an upstream-most one pair of the bright spots, and the emitting waveguides are connected to positions corresponding to a downstream-most one pair of the bright spots.

19. 发明申请

US20080253709A1 Bearing With Lubrication Oil Filter 有权
标题翻译：带润滑油过滤器轴承
公开(公告)号：US20080253709A1
公开(公告)日：2008-10-16
申请号：US12066934
申请日：2007-06-29
申请人： Takashi Kikuchi , Yutaka Matsuyama
发明人： Takashi Kikuchi , Yutaka Matsuyama
IPC分类号： F16C9/02
CPC分类号： F01M11/03 , F02F7/0053 , F16C9/02 , F16C17/022 , F16C33/105
摘要： A bearing (crank bearing 6) is constituted of an upper bearing (61) that is attached to a cylinder block, a lower bearing (67) that is attached to a crank cap, and a bearing filter (71) for filtering engine oil. The bearing filter (71) is fitted in an oil hole (62A) of the upper bearing (61).
摘要翻译：轴承（曲轴轴承6）由附接到气缸体的上轴承（61），附接到曲柄盖的下轴承（67）和用于过滤机油的轴承过滤器（71）构成。轴承过滤器（71）装配在上轴承（61）的油孔（62A）中。

20. 发明申请

US20080251897A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080251897A1
公开(公告)日：2008-10-16
申请号：US11851982
申请日：2007-09-07
申请人： Takashi Kikuchi , Koichi Kanemoto , Chuichi Miyazaki , Toshihiro Shiotsuki
发明人： Takashi Kikuchi , Koichi Kanemoto , Chuichi Miyazaki , Toshihiro Shiotsuki
IPC分类号： H01L23/49
CPC分类号： H01L24/83 , H01L23/3128 , H01L23/49575 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2224/05554 , H01L2224/274 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48175 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/49113 , H01L2224/4912 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/83191 , H01L2224/8385 , H01L2224/85181 , H01L2224/92 , H01L2224/97 , H01L2225/0651 , H01L2225/06562 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/30105 , H01L2924/3511 , H01L2224/85 , H01L2224/83 , H01L2224/92247 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/01028 , H01L2224/29099 , H01L2224/85399 , H01L2224/05599
摘要： The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved.In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.
摘要翻译：通过经由具有粘合性的绝缘膜积聚的状态，具有存储在同一密封体中平面尺寸不同的多个半导体芯片的结构的半导体器件的可靠性得到改善。在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。

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