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    • 13. 发明授权
    • Information processing apparatus and resolution enhancement processing control program
    • 信息处理装置和分辨率增强处理控制程序
    • US07941005B2
    • 2011-05-10
    • US12579926
    • 2009-10-15
    • Akira Tanaka
    • Akira Tanaka
    • G06T5/00G06K9/46
    • G06T3/403
    • According to one embodiment, an information processing apparatus includes an image quality improvement processing module which applies first image quality improvement processing for image quality enhancement to each of corresponding pixels in the temporary high-resolution image corresponding to a region other than the flat part region, and applies second image quality improvement processing for sharpening to each of corresponding pixels in the temporary high-resolution image corresponding to an edge region which is not located on the texture region. The apparatus further includes a controller which controls at least one of the texture determination reference value applied to the detecting the texture region and the flat part determination reference value applied to the detecting the flat part region based on a predetermined rule.
    • 根据一个实施例,一种信息处理设备包括图像质量改进处理模块,其对与除了平坦部分区域之外的区域相对应的临时高分辨率图像中的每个相应像素应用图像质量提高处理, 对与不在纹理区域的边缘区域相对应的临时高分辨率图像中的每个相应像素应用锐化的第二图像质量改善处理。 该装置还包括控制器,其基于预定规则控制应用于检测纹理区域的纹理确定参考值和应用于检测平坦部分区域的平坦部分确定基准值中的至少一个。
    • 16. 发明申请
    • LIGHT EMITTING DEVICE
    • 发光装置
    • US20100283035A1
    • 2010-11-11
    • US12561761
    • 2009-09-17
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/00
    • H01L33/145H01L33/08H01L33/305
    • A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer.
    • 发光器件包括:有源层,包括具有阱层和阻挡层的多量子阱,所述有源层包括非发射区和形成在所述非发射区周围的发射区; 设置在所述有源层的第一主表面上的第一覆层; 焊接电极,其设置在所述第一包层上方,使得其中心位于与所述第一主表面垂直的方向上观察的所述非发光区域的中心附近; 以及第二包覆层,设置在与第一主表面相对的有源层的第二主表面的下方。 非发光区域中的阱层的带隙比发光区域中的阱层的带隙宽,并且比第一包层的带隙窄。
    • 20. 发明授权
    • Nitride-based semiconductor laser device
    • 基于氮化物的半导体激光器件
    • US07522645B2
    • 2009-04-21
    • US11841254
    • 2007-08-20
    • Akira Tanaka
    • Akira Tanaka
    • H01S3/14H01S3/04
    • H01S5/34333B82Y20/00H01S5/2009H01S5/22H01S5/3072
    • A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.
    • 一种氮化物系半导体激光器件,包括:第一导电类型的第一包层; 形成在所述第一包层上方的有源层; 形成在有源层上的第二导电类型的溢出防止层; 以及形成在溢流防止层上方的第二导电类型的第二包覆层。 有源层包括三个阻挡层和两个阱层,使得每个阱层可以插入在三个阻挡层中的相应的一个之间,并且三个势垒层中的两个位于两个阱层的外侧,从而构成双重的 层数量子阱层。 每个阱层的厚度设定在2〜5nm的范围内。