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11. 发明授权

US07786497B2 Pixel structure of LCD and fabrication method thereof 有权
标题翻译： LCD的像素结构及其制作方法
公开(公告)号：US07786497B2
公开(公告)日：2010-08-31
申请号：US12019717
申请日：2008-01-25
申请人： Yi-Sheng Cheng , Chih-Wei Chao
发明人： Yi-Sheng Cheng , Chih-Wei Chao
IPC分类号： H01L21/00
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255
摘要： In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.
摘要翻译：在该像素结构中，金属层/电介质层/重掺杂硅层构成存储电容器的底部电极/电容器电介质层/顶部电极。同时，在薄膜晶体管下方形成金属屏蔽层，以降低光漏电流。

12. 发明授权

US07646440B2 Pixel structure of LCD and fabrication method thereof 有权
标题翻译： LCD的像素结构及其制作方法
公开(公告)号：US07646440B2
公开(公告)日：2010-01-12
申请号：US12019701
申请日：2008-01-25
申请人： Yi-Sheng Cheng , Chih-Wei Chao
发明人： Yi-Sheng Cheng , Chih-Wei Chao
IPC分类号： G02F1/1343
CPC分类号： H01L27/124 , G02F1/136209 , G02F1/136213 , G02F2001/136231 , H01L27/1255 , H01L27/1288
摘要： Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor.
摘要翻译：五个光掩模用于制造LCD的像素结构。在该像素结构中，在薄膜晶体管的下方形成金属遮光层，以减少光电流。此外，使用金属导线来增加存储电容器的存储容量。

13. 发明授权

US07645623B2 LCD pixel array structure and fabrication method thereof 有权
标题翻译： LCD像素阵列结构及其制造方法
公开(公告)号：US07645623B2
公开(公告)日：2010-01-12
申请号：US11947118
申请日：2007-11-29
申请人： Yi-Sheng Cheng
发明人： Yi-Sheng Cheng
IPC分类号： H01L21/00
CPC分类号： H01L27/1255 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.
摘要翻译：只有五个光掩模用于制造LCD像素阵列结构。通过两个沉积步骤形成LCD像素阵列结构的栅介质层，以增加存储电容器的存储容量。

14. 发明申请

US20080296574A1 Pixel Structure of LCD and Fabrication Method Thereof 有权
标题翻译： LCD的像素结构及其制作方法
公开(公告)号：US20080296574A1
公开(公告)日：2008-12-04
申请号：US12019717
申请日：2008-01-25
申请人： Yi-Sheng Cheng , Chih-Wei Chao
发明人： Yi-Sheng Cheng , Chih-Wei Chao
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255
摘要： In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.
摘要翻译：在该像素结构中，金属层/电介质层/重掺杂硅层构成存储电容器的底部电极/电容器电介质层/顶部电极。同时，在薄膜晶体管下方形成金属屏蔽层，以降低光漏电流。

15. 发明申请

US20080129664A1 PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US20080129664A1
公开(公告)日：2008-06-05
申请号：US11740937
申请日：2007-04-27
申请人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
发明人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
IPC分类号： G09G3/36
CPC分类号： H01L27/1288 , G09G3/3648 , G09G2300/0465 , H01L27/124 , H01L27/1255 , H01L29/0657 , H01L29/41733 , H01L29/42384
摘要： A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.
摘要翻译：在基板上设置包括扫描线，数据线，有源器件，屏蔽电极和像素电极的像素结构。数据线包括上导线和底导线。上导线设置在扫描线上方并穿过扫描线。底部导线与上导电线电连接。有源器件电连接到扫描线和上导电线。屏蔽电极设置在底部导线上。设置在屏蔽电极上方的像素电极与有源器件电连接。此外，像素电极的一部分和屏蔽电极的一部分形成存储电容器。

16. 发明申请

US20080128719A1 LCD Pixel Array Structure and Fabrication Method Thereof 有权
标题翻译： LCD像素阵列结构及其制作方法
公开(公告)号：US20080128719A1
公开(公告)日：2008-06-05
申请号：US11947118
申请日：2007-11-29
申请人： Yi-Sheng Cheng
发明人： Yi-Sheng Cheng
IPC分类号： H01L33/00
CPC分类号： H01L27/1255 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.
摘要翻译：只有五个光掩模用于制造LCD像素阵列结构。通过两个沉积步骤形成LCD像素阵列结构的栅介质层，以增加存储电容器的存储容量。

17. 发明申请

US20080020519A1 LTPS-LCD Structure and Method for Manufacturing the Same 有权
标题翻译： LTPS-LCD结构及其制造方法
公开(公告)号：US20080020519A1
公开(公告)日：2008-01-24
申请号：US11550438
申请日：2006-10-18
申请人： Yi-Sheng Cheng
发明人： Yi-Sheng Cheng
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , G02F1/136213 , H01L27/1255
摘要： An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.
摘要翻译：提供一种LTPS-LCD结构及其制造方法。该结构包括其上形成有多个像素的基板。这些像素中的每一个包括控制区域，电容区域和显示区域。该结构最初由衬底上的透明电极形成，随后是控制装置，电容存储装置。然后，显示单元分别形成在控制区域，电容区域和显示区域上。结果，可以提高结构的电容，并且可以减少掩模的制造工艺。

18. 发明授权

US08890147B2 Pixel, a storage capacitor, and a method for forming the same 有权
标题翻译：像素，存储电容器及其形成方法
公开(公告)号：US08890147B2
公开(公告)日：2014-11-18
申请号：US12048631
申请日：2008-03-14
申请人： Yi-Sheng Cheng
发明人： Yi-Sheng Cheng
IPC分类号： H01L27/32 , H01L27/13 , G02F1/1362 , H01L27/12
CPC分类号： H01L27/1255 , G02F1/136213 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L27/13
摘要： A pixel, a storage capacitor, and a method for forming the same. The storage capacitor formed on a substrate comprises a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is formed on the substrate wherein the semiconductor layer and the substrate are covered by the first dielectric layer. The first conductive layer is formed on a part of the first dielectric layer. The second dielectric layer is formed on the first conductive layer, and the lateral side of the stacking structure including the second dielectric layer and the first conductive layer has a taper shaped. The second conductive layer is formed on a part of the second dielectric layer.
摘要翻译：像素，存储电容器及其形成方法。形成在基板上的存储电容器包括半导体层，第一介电层，第一导电层，第二介电层和第二导电层。半导体层形成在基板上，其中半导体层和基板被第一介电层覆盖。第一导电层形成在第一介电层的一部分上。第二电介质层形成在第一导电层上，并且包括第二电介质层和第一导电层的堆叠结构的横向侧具有锥形。第二导电层形成在第二电介质层的一部分上。

19. 发明授权

US08093596B2 Pixel structure 有权
标题翻译：像素结构
公开(公告)号：US08093596B2
公开(公告)日：2012-01-10
申请号：US12815394
申请日：2010-06-14
申请人： Ta-Wei Chiu , Yi-Sheng Cheng , Shih-Yi Yen
发明人： Ta-Wei Chiu , Yi-Sheng Cheng , Shih-Yi Yen
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L28/60 , G02F2001/136231 , H01L27/1255 , H01L27/1288
摘要： A pixel structure includes a patterned semiconductor layer disposed on a transistor region of the substrate, a first capacitor electrode disposed on a capacitor region of the substrate, a gate dielectric layer disposed on the first capacitor electrode, a gate disposed on a channel region of the patterned semiconductor layer, a second capacitor electrode, a dielectric layer, and an aluminum capacitor electrode sequentially disposed on the gate dielectric layer of the capacitor region, a first dielectric layer disposed on the gate and the aluminum capacitor electrode, at least one first wire disposed in the first dielectric layer for electrically connecting source/drain region of the patterned semiconductor layer and the aluminum capacitor electrode, a second dielectric layer disposed on the first wire, and a first transparent conductive layer disposed on the second dielectric layer and connected to the first wire.
摘要翻译：像素结构包括设置在基板的晶体管区域上的图案化半导体层，设置在基板的电容器区域上的第一电容器电极，设置在第一电容器电极上的栅极介电层，设置在第一电容器电极的沟道区上的栅极图案化半导体层，第二电容器电极，电介质层和依次设置在电容器区的栅极电介质层上的铝电容器电极，设置在栅极和铝电容器电极上的第一电介质层，至少一个第一布线在用于电连接图案化半导体层的源极/漏极区域和铝电容器电极的第一电介质层中，设置在第一线路上的第二电介质层和设置在第二电介质层上并连接到第一电介质层的第一透明导电层线。

20. 发明申请

US20110263053A1 METHOD FOR MANUFACTURING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20110263053A1
公开(公告)日：2011-10-27
申请号：US13174795
申请日：2011-07-01
申请人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
发明人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , G09G3/3648 , G09G2300/0465 , H01L27/124 , H01L27/1255 , H01L29/0657 , H01L29/41733 , H01L29/42384
摘要： A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.
摘要翻译：在基板上设置包括扫描线，数据线，有源器件，屏蔽电极和像素电极的像素结构。数据线包括上导线和底导线。上导线设置在扫描线上方并穿过扫描线。底部导线与上导电线电连接。有源器件电连接到扫描线和上导电线。屏蔽电极设置在底部导线上。设置在屏蔽电极上方的像素电极与有源器件电连接。此外，像素电极的一部分和屏蔽电极的一部分形成存储电容器。

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