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11. 发明申请

US20100055857A1 METHOD OF FORMING A POWER DEVICE 有权
标题翻译：形成功率器件的方法
公开(公告)号：US20100055857A1
公开(公告)日：2010-03-04
申请号：US12334492
申请日：2008-12-14
申请人： Wei-Chieh Lin , Hsin-Yu Hsu , Hsin-Yen Chiu , Shih-Chieh Hung , Ho-Tai Chen , Jen-Hao Yeh , Li-Cheng Lin
发明人： Wei-Chieh Lin , Hsin-Yu Hsu , Hsin-Yen Chiu , Shih-Chieh Hung , Ho-Tai Chen , Jen-Hao Yeh , Li-Cheng Lin
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/4236 , H01L29/456 , H01L29/66734
摘要： A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.
摘要翻译：一种形成功率器件的方法包括提供衬底，至少具有沟槽并设置在衬底上的半导体层，覆盖半导体层的栅极绝缘层和设置在沟槽中的导电材料，执行离子注入工艺从体层进行倾斜的离子注入工艺，从重掺杂区域进行倾斜的离子注入工艺，整体形成第一介电层，进行化学机械抛光工艺，直到布置在重掺杂区域之下的体层露出，形成源区并且形成直接覆盖设置在沟槽的相对侧上的源极区域的源极迹线。

12. 发明授权

US07952137B2 Trench semiconductor device and method of making the same 有权
标题翻译：沟槽半导体器件及其制造方法
公开(公告)号：US07952137B2
公开(公告)日：2011-05-31
申请号：US12477121
申请日：2009-06-02
申请人： Wei-Chieh Lin , Li-Cheng Lin
发明人： Wei-Chieh Lin , Li-Cheng Lin
IPC分类号： H01L23/60
CPC分类号： H01L29/7813 , H01L27/0255 , H01L29/0692 , H01L29/0696 , H01L29/66734 , H01L29/7808 , H01L29/866
摘要： A trench semiconductor device and a method of making the same are provided. The trench semiconductor device includes a trench MOS device and a trench ESD protection device. The trench ESD protection device is electrically connected between the gate electrode and source electrode of the trench MOS device so as to provide ESD protection. The fabrication of the ESD protection device is integrated into the process of the trench MOS device, and therefore no extra mask is required to define the doped regions of the trench ESD protection device. Consequently, the trench semiconductor device is advantageous for its simplified manufacturing process and low cost.
摘要翻译：提供了沟槽半导体器件及其制造方法。沟槽半导体器件包括沟槽MOS器件和沟槽ESD保护器件。沟槽ESD保护器件电连接在沟槽MOS器件的栅电极和源电极之间，以提供ESD保护。 ESD保护器件的制造集成到沟槽MOS器件的工艺中，因此不需要额外的掩模来限定沟槽ESD保护器件的掺杂区域。因此，沟槽半导体器件有利于其简化的制造工艺和低成本。

13. 发明授权

US07851310B2 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US07851310B2
公开(公告)日：2010-12-14
申请号：US12483237
申请日：2009-06-11
申请人： Li-Cheng Lin , Wei-Chieh Lin
发明人： Li-Cheng Lin , Wei-Chieh Lin
IPC分类号： H01L21/338
CPC分类号： H01L29/4236 , H01L29/66621 , H01L29/78
摘要： A method for forming semiconductor device, which simultaneously forms a trench MOS transistor device, and an embedded schottky barrier diode (SBD) device in a semiconductor substrate. The embedded SBD device has lower forward voltage drop, which reduces power dissipation. In addition, the voltage bearing ability may be modified easily by virtue of altering the dopant concentration or the width of the voltage bearing dopant region, or the thickness of epitaxial silicon layer. Furthermore, extra cost of purchasing SBD diode may be saved.
摘要翻译：一种在半导体衬底中同时形成沟槽MOS晶体管器件和嵌入肖特基势垒二极管（SBD）器件的半导体器件的形成方法。嵌入式SBD器件具有较低的正向压降，从而降低功耗。此外，由于改变掺杂剂掺杂剂区域的掺杂剂浓度或宽度，或外延硅层的厚度，可以容易地改变电压承载能力。此外，可以节省购买SBD二极管的额外成本。

14. 发明申请

US20100216290A1 Method for forming semiconductor device 有权
公开(公告)号：US20100216290A1
公开(公告)日：2010-08-26
申请号：US12483237
申请日：2009-06-11
申请人： Li-Cheng Lin , Wei-Chieh Lin
发明人： Li-Cheng Lin , Wei-Chieh Lin
IPC分类号： H01L21/336
CPC分类号： H01L29/4236 , H01L29/66621 , H01L29/78
摘要： A method for forming semiconductor device, which simultaneously forms a trench MOS transistor device, and an embedded schottky barrier diode (SBD) device in a semiconductor substrate. The embedded SBD device has lower forward voltage drop, which reduces power dissipation. In addition, the voltage bearing ability may be modified easily by virtue of altering the dopant concentration or the width of the voltage bearing dopant region, or the thickness of epitaxial silicon layer. Furthermore, extra cost of purchasing SBD diode may be saved.

15. 发明申请

US20090113086A1 Method for providing a buffer status report in a mobile communication network 有权
标题翻译：用于在移动通信网络中提供缓冲器状态报告的方法
公开(公告)号：US20090113086A1
公开(公告)日：2009-04-30
申请号：US12289418
申请日：2008-10-28
申请人： Chunli Wu , Tsung-Liang Lu , Chung-Shan Wang , Yen-Chen Chen , Li-Cheng Lin
发明人： Chunli Wu , Tsung-Liang Lu , Chung-Shan Wang , Yen-Chen Chen , Li-Cheng Lin
IPC分类号： G06F13/00
CPC分类号： H04W72/1284 , H04W72/1242
摘要： A method for providing a buffer status report in a mobile communication network is implemented between a base station and a user equipment. When data arrives to buffers of the user equipment and the priority of a logical channel for the data is higher than those of other logical channels for existing data in the buffers, a short buffer status report associated with the buffer of a logical channel group corresponding to the arrival data is triggered. The user equipment is based on obtained resources allocated by the base station to fill all data of the buffer of the logical channel group in a Protocol Data Unit. If all data of the buffer of the logical channel group corresponding to the arrival data can be completely filled in the Protocol Data Unit, the short buffer status report is canceled. Otherwise, the user equipment transmits the short buffer status report.
摘要翻译：在基站和用户设备之间实现用于在移动通信网络中提供缓冲器状态报告的方法。当数据到达用户设备的缓冲器并且用于数据的逻辑信道的优先级高于用于缓冲器中的现有数据的其他逻辑信道的优先级时，与缓冲器中的对应于逻辑信道组的缓冲器相关联的短缓冲状态报告到达数据被触发。用户设备基于由基站分配的获得的资源来填充协议数据单元中的逻辑信道组的缓冲器的所有数据。如果对应于到达数据的逻辑信道组的缓冲器的所有数据都可以完全填充到协议数据单元中，则缓冲器状态报告被取消。否则，用户设备发送短暂缓冲状态报告。

16. 发明授权

US08049273B2 Semiconductor device for improving the peak induced voltage in switching converter 有权
标题翻译：用于提高开关转换器中峰值感应电压的半导体器件
公开(公告)号：US08049273B2
公开(公告)日：2011-11-01
申请号：US12371618
申请日：2009-02-15
申请人： Wei-Chieh Lin , Ho-Tai Chen , Li-Cheng Lin , Jen-Hao Yeh , Hsin-Yen Chiu , Hsin-Yu Hsu , Shih-Chieh Hung
发明人： Wei-Chieh Lin , Ho-Tai Chen , Li-Cheng Lin , Jen-Hao Yeh , Hsin-Yen Chiu , Hsin-Yu Hsu , Shih-Chieh Hung
IPC分类号： H01L26/66
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/42376 , H01L29/4238 , H01L29/456 , H01L29/4916
摘要： A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.
摘要翻译：功率半导体器件包括背面金属层，形成在背面金属层上的衬底，形成在衬底上的半导体层和前侧金属层。半导体层包括第一沟槽结构，其包括围绕具有多晶硅注入的第一沟槽形成的栅极氧化层，第二沟槽结构，包括围绕具有多晶硅注入的第二沟槽形成的栅极氧化层，形成的p基区在所述第一沟槽结构和所述第二沟槽结构之间形成有多个n +源极区，形成在所述p基区上以及所述第一沟槽结构和所述第二沟槽结构之间，形成在所述第一沟槽结构上的介电层，所述第二沟槽结构，以及多个n +源极区域。前半导体金属层形成在半导体层上并填充形成在p基区上的多个n +源极区之间的间隙。

17. 发明授权

US07769926B2 Method for providing a buffer status report using user equipment to calculate available space of a protocol data unit in a mobile communication network 有权
标题翻译：用于使用用户设备提供缓冲器状态报告以计算移动通信网络中的协议数据单元的可用空间的方法
公开(公告)号：US07769926B2
公开(公告)日：2010-08-03
申请号：US12289418
申请日：2008-10-28
申请人： Chunli Wu , Tsung-Liang Lu , Chung-Shan Wang , Yen-Chen Chen , Li-Cheng Lin
发明人： Chunli Wu , Tsung-Liang Lu , Chung-Shan Wang , Yen-Chen Chen , Li-Cheng Lin
IPC分类号： G06F13/00 , H04B7/216 , H04J3/12
CPC分类号： H04W72/1284 , H04W72/1242
摘要： A method for providing a buffer status report in a mobile communication network is implemented between a base station and a user equipment. When data arrives to buffers of the user equipment and the priority of a logical channel for the data is higher than those of other logical channels for existing data in the buffers, a short buffer status report associated with the buffer of a logical channel group corresponding to the arrival data is triggered. The user equipment is based on obtained resources allocated by the base station to fill all data of the buffer of the logical channel group in a Protocol Data Unit. If all data of the buffer of the logical channel group corresponding to the arrival data can be completely filled in the Protocol Data Unit, the short buffer status report is canceled. Otherwise, the user equipment transmits the short buffer status report.
摘要翻译：在基站和用户设备之间实现用于在移动通信网络中提供缓冲器状态报告的方法。当数据到达用户设备的缓冲器并且用于数据的逻辑信道的优先级高于用于缓冲器中的现有数据的其他逻辑信道的优先级时，与缓冲器中的对应于逻辑信道组的缓冲器相关联的短暂缓冲状态报告到达数据被触发。用户设备基于由基站分配的获得的资源来填充协议数据单元中的逻辑信道组的缓冲器的所有数据。如果对应于到达数据的逻辑信道组的缓冲器的所有数据都可以完全填充到协议数据单元中，则缓冲器状态报告被取消。否则，用户设备发送短暂缓冲状态报告。

18. 发明申请

US20100117142A1 Semiconductor Device for Improving the Peak Induced Voltage in Switching Converter 有权
标题翻译：用于提高开关转换器中的峰值感应电压的半导体器件
公开(公告)号：US20100117142A1
公开(公告)日：2010-05-13
申请号：US12371618
申请日：2009-02-15
申请人： Wei-Chieh Lin , Ho-Tai Chen , Li-Cheng Lin , Jen-Hao Yeh , Hsin-Yen Chiu , Hsin-Yu Hsu , Shih-Chieh Hung
发明人： Wei-Chieh Lin , Ho-Tai Chen , Li-Cheng Lin , Jen-Hao Yeh , Hsin-Yen Chiu , Hsin-Yu Hsu , Shih-Chieh Hung
IPC分类号： H01L29/772
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/42376 , H01L29/4238 , H01L29/456 , H01L29/4916
摘要： A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.
摘要翻译：功率半导体器件包括背面金属层，形成在背面金属层上的衬底，形成在衬底上的半导体层和前侧金属层。半导体层包括第一沟槽结构，其包括围绕具有多晶硅注入的第一沟槽形成的栅极氧化层，第二沟槽结构，包括围绕具有多晶硅注入的第二沟槽形成的栅极氧化层，形成的p基区在所述第一沟槽结构和所述第二沟槽结构之间形成有多个n +源极区，形成在所述p基区上以及所述第一沟槽结构和所述第二沟槽结构之间，形成在所述第一沟槽结构上的介电层，所述第二沟槽结构，以及多个n +源极区域。前半导体金属层形成在半导体层上并填充形成在p基区上的多个n +源极区之间的间隙。

19. 发明授权

US07682903B1 Method of forming a power device 有权
标题翻译：形成电力设备的方法
公开(公告)号：US07682903B1
公开(公告)日：2010-03-23
申请号：US12334492
申请日：2008-12-14
申请人： Wei-Chieh Lin , Hsin-Yu Hsu , Hsin-Yen Chiu , Shih-Chieh Hung , Ho-Tai Chen , Jen-Hao Yeh , Li-Cheng Lin
发明人： Wei-Chieh Lin , Hsin-Yu Hsu , Hsin-Yen Chiu , Shih-Chieh Hung , Ho-Tai Chen , Jen-Hao Yeh , Li-Cheng Lin
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/4236 , H01L29/456 , H01L29/66734
摘要： A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.
摘要翻译：一种形成功率器件的方法包括提供衬底，至少具有沟槽并设置在衬底上的半导体层，覆盖半导体层的栅极绝缘层和设置在沟槽中的导电材料，执行离子注入工艺从体层进行倾斜的离子注入工艺，从重掺杂区域进行倾斜的离子注入工艺，整体形成第一介电层，进行化学机械抛光工艺，直到布置在重掺杂区域之下的体层露出，形成源区并且形成直接覆盖设置在沟槽的相对侧上的源极区域的源极迹线。

20. 发明申请

US20060200573A1 Multimedia Computer System and Method 审中-公开
标题翻译：多媒体计算机系统与方法
公开(公告)号：US20060200573A1
公开(公告)日：2006-09-07
申请号：US11164406
申请日：2005-11-22
申请人： Li-Cheng Lin
发明人： Li-Cheng Lin
IPC分类号： G06F15/16
CPC分类号： G06F1/3203 , G06F1/3293 , G06F3/1407 , G09G2330/021 , H04L67/36 , H04N5/46 , H04N5/765 , H04N7/163 , H04N9/641 , H04N9/8042 , H04N21/426 , H04N21/4436 , Y02D10/122
摘要： A multimedia computer system and method is disclosed. A medium device of the computer system, like an optical disc loader, has a built-in function of multimedia decoding for supporting the computer system to work under a normal mode and a playback mode. In the normal mode, the medium device does not decode, and north/south bridges of the computer arrange data exchange and access between the medium device, a CPU, and a memory of the computer system. In the playback mode, the medium device performs multimedia decoding itself for obtaining video data from the medium, and the video data are sent to a display of the computer system by the north bridge. Therefore, in this playback mode, other circuits like the south bridge, CPU and memory can be powered down to an idle status, and a low power consumption multimedia broadcast is realized.
摘要翻译：公开了一种多媒体计算机系统和方法。计算机系统的介质设备，如光盘加载器，具有内置的多媒体解码功能，用于支持计算机系统在正常模式和播放模式下工作。在正常模式下，介质设备不进行解码，计算机的北/南桥在介质设备，CPU和计算机系统的存储器之间进行数据交换和访问。在播放模式中，媒体设备本身执行多媒体解码以从媒体获取视频数据，并且视频数据被北桥发送到计算机系统的显示器。因此，在这种重放模式中，像南桥，CPU和存储器这样的其他电路可以掉电到空闲状态，实现低功耗多媒体广播。

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