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11. 发明授权

US08557708B2 Methods for fabricating a magnetic head reader using a chemical mechanical polishing (CMP) process for sensor stripe height patterning 有权
标题翻译：使用用于传感器条纹高度图案化的化学机械抛光（CMP）工艺来制造磁头阅读器的方法
公开(公告)号：US08557708B2
公开(公告)日：2013-10-15
申请号：US11743404
申请日：2007-05-02
申请人： Hung-Chin Guthrie , Ying Hong , Ming Jiang
发明人： Hung-Chin Guthrie , Ying Hong , Ming Jiang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G11B5/3163 , G11B5/3169
摘要： Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.
摘要翻译：使用化学机械抛光（CMP）工艺制造TMR和CPP GMR磁头的方法，具有用于传感器条纹高度图案化的图案化CMP导电保护层。该方法包括定义磁头读取器的读取传感器的条带高度。该方法还包括在读取的传感器上填充沉积绝缘体层。该方法还包括在限定读取传感器的同时，在读取的传感器上执行CMP处理，以去除所述导电保护层上方的绝缘体层的过度填充部分，并且去除导电保护层上的传感器图案掩模结构层。结果，绝缘体层与读取传感器平坦化并且平滑，消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。

12. 发明授权

US08520337B1 Perpendicular magnetic recording writer pole with leading and trailing bevel side wall angles at air bearing surface 有权
标题翻译：垂直磁记录笔杆，空气轴承表面具有前后斜面侧壁角
公开(公告)号：US08520337B1
公开(公告)日：2013-08-27
申请号：US13436712
申请日：2012-03-30
申请人： Feng Liu , Zhigang Bai , Yugang Wang , Jinqiu Zhang , Ying Hong , Tao Pan
发明人： Feng Liu , Zhigang Bai , Yugang Wang , Jinqiu Zhang , Ying Hong , Tao Pan
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A perpendicular magnetic recording transducer with leading and trailing bevel side wall angles at air bearing surface for use in a data storage device is provided. The transducer includes a magnetic writer pole having a pole tip facing an air bearing surface (ABS). The pole tip includes a pole tip face having a leading edge, a trailing edge, a first side wall, and a second side wall. The first side wall includes a first side wall section adjoining the leading edge and a second side wall section adjoining the trailing edge. The first side wall section is at a first angle measured from a perpendicular center line dividing the trailing edge. The second side wall section is at a second angle measured from a perpendicular center line dividing the trailing edge. The second angle is greater than three degrees. The first angle is greater than the second angle.
摘要翻译：提供了一种用于数据存储装置的在空气轴承表面具有前后倾斜侧壁角度的垂直磁记录传感器。换能器包括具有面向空气轴承表面（ABS）的极尖的磁性写入极。极尖包括具有前缘，后缘，第一侧壁和第二侧壁的极尖端面。第一侧壁包括邻接前缘的第一侧壁部分和与后缘相邻的第二侧壁部分。第一侧壁部分是从分割后缘的垂直中心线测量的第一角度。第二侧壁部分是从分割后缘的垂直中心线测量的第二角度。第二个角度大于三度。第一角度大于第二角度。

13. 发明授权

US08705205B1 Magnetic recording head having a dual sidewall angle 有权
标题翻译：具有双重侧壁角度的磁记录头
公开(公告)号：US08705205B1
公开(公告)日：2014-04-22
申请号：US13169685
申请日：2011-06-27
申请人： Yunfei Li , Lijie Guan , Ying Hong , Zhigang Bai , Jinqiu Zhang , Yugang Wang , Feng Liu , Tao Pan
发明人： Yunfei Li , Lijie Guan , Ying Hong , Zhigang Bai , Jinqiu Zhang , Yugang Wang , Feng Liu , Tao Pan
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A magnetic transducer having an air-bearing surface (ABS) is described. The magnetic transducer includes a pole and at least one coil for energizing the pole. The pole has a pole tip proximate to the ABS, a yoke distal from the ABS, and a bottom surface including a bottom bevel. At least the yoke includes at least one sidewall having a first angle and a second angle. The first angle is between the bottom surface and the at least one sidewall. The second angle is a constant distance along the at least one sidewall from the first angle.
摘要翻译：描述了具有空气轴承表面（ABS）的磁换能器。磁换能器包括极和用于激励极的至少一个线圈。杆具有靠近ABS的极尖端，远离ABS的轭，以及包括底部斜面的底表面。至少轭包括具有第一角度和第二角度的至少一个侧壁。第一角度在底表面和至少一个侧壁之间。第二角度是从第一角度沿着至少一个侧壁的恒定距离。

14. 发明授权

US08628672B1 Process for manufacturing a perpendicular magnetic recording writer pole with nonmagnetic bevel 失效
标题翻译：制造具有非磁性斜面的垂直磁记录刻录机的方法
公开(公告)号：US08628672B1
公开(公告)日：2014-01-14
申请号：US13535091
申请日：2012-06-27
申请人： Weimin Si , Ying Hong , Zhigang Bai , Yunhe Huang , Fenglin Liu , Hong Zhang , Jikou Zhou , Xiaoyu Yang , Yuan Yao , Iulica Zana , Feng Liu , Ling Wang
发明人： Weimin Si , Ying Hong , Zhigang Bai , Yunhe Huang , Fenglin Liu , Hong Zhang , Jikou Zhou , Xiaoyu Yang , Yuan Yao , Iulica Zana , Feng Liu , Ling Wang
IPC分类号： B44C1/22
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A method for fabricating a magnetic recording transducer having a magnetic writer pole with a short effective throat height is provided. In an embodiment, a writer structure comprising a magnetic writer pole having a trailing bevel and a nonmagnetic stack on the top surface of the writer pole is provided. A dielectric write gap layer comprising alumina is deposited over the trailing bevel section and the nonmagnetic stack; and at least one etch stop layer is deposited over the dielectric write gap layer. A layer of nonmagnetic fill material is deposited over the etch stop layer and to form a nonmagnetic bevel by performing a dry etch process. The etch stop layer(s) are removed from the short throat section; and a trailing shield is deposited over the short throat section, nonmagnetic bevel, and nonmagnetic stack top surface.
摘要翻译：提供一种制造具有具有短的有效喉部高度的磁性写入极的磁记录换能器的方法。在一个实施例中，提供了一种写入器结构，其包括在写入器极的顶表面上具有后斜面和非磁性堆叠的磁性写入极。包含氧化铝的电介质写入间隙层沉积在后斜面部分和非磁性层上; 并且至少一个蚀刻停止层沉积在电介质写间隙层上。一层非磁性填充材料沉积在蚀刻停止层上并通过执行干法蚀刻工艺形成非磁性斜面。蚀刻停止层从短喉部分移除; 并且尾部屏蔽层沉积在短喉部分，非磁性斜面和非磁性堆叠顶表面上。

15. 外观设计

USD1004072S1 Breast milk collector 有权
公开(公告)号：USD1004072S1
公开(公告)日：2023-11-07
申请号：US29823920
申请日：2022-01-20
申请人： Ying Hong
设计人： Ying Hong
摘要： FIG. 1 is a front, right side, top perspective view of a breast milk collector showing my new design;
FIG. 2 is a rear, right side, bottom perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken lines in the drawings depict portions of the breast milk collector that form no part of the claimed design.

16. 发明授权

US11699588B2 Vertical nanowire semiconductor device and manufacturing method therefor 有权
公开(公告)号：US11699588B2
公开(公告)日：2023-07-11
申请号：US17695336
申请日：2022-03-15
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L21/02 , H01L27/12 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02502 , H01L27/1222 , H01L27/1277 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/66757 , H01L29/66772 , H01L29/78642 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02595 , H01L29/0676
摘要： A vertical nanowire semiconductor device manufactured by a method of manufacturing a vertical nanowire semiconductor device is provided. The vertical nanowire semiconductor device includes a substrate, a first conductive layer in a source or drain area formed above the substrate, a semiconductor nanowire of a channel area vertically upright with respect to the substrate on the first conductive layer, wherein a crystal structure thereof is grown in orientation, a second conductive layer of a drain or source area provided on the top of the semiconductor nanowire, a metal layer on the second conductive layer, a NiSi2 contact layer between the second conductive layer and the metal layer, a gate surrounding the channel area of the vertical nanowire, and a gate insulating layer located between the channel area and the gate.

17. 发明授权

US11631752B2 Low temperature polycrystalline semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11631752B2
公开(公告)日：2023-04-18
申请号：US17584903
申请日：2022-01-26
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L21/00 , H01L29/66 , H01L21/02 , H01L27/12 , H01L29/786 , H01L29/45
摘要： A semiconductor device include a substrate, a buffer layer formed on the substrate, a channel layer formed by an intrinsic polycrystalline silicon layer on the buffer layer, polycrystalline source and drain by non-intrinsic silicon formed on both sides of the polycrystalline silicon layer, a source electrode and a drain electrode formed on the polycrystalline source and the drain, a gate electrode corresponding to the channel layer, and an NiSi2 contact layer located between the source and the source electrode and between the drain and the drain electrode.

18. 发明授权

US11342448B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US11342448B2
公开(公告)日：2022-05-24
申请号：US17028337
申请日：2020-09-22
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L29/66 , H01L21/02 , H01L29/08
摘要： Provided is a method of manufacturing a semiconductor device, the method including: forming an insulating layer on a substrate; forming a trench, which extends in a first direction parallel with the plane of the substrate, to a preset depth in the insulating layer in a second direction perpendicular to the plane of the substrate; forming a plurality of amorphous silicon strips, which extend from the inside of the trench in the second direction intersecting with the first direction, in parallel in a first direction; forming a spacer on a side of the amorphous silicon strip by using an insulating material layer; and crystallizing the amorphous silicon strip by heat treatment, wherein crystal nucleation sites are formed in the amorphous silicon layer in the trench, and a polycrystalline silicon layer is formed by lateral grain growth in a longitudinal direction of the amorphous silicon strip from the crystal nucleation site.

19. 发明授权

US08670213B1 Methods for tunable plating seed step coverage 有权
标题翻译：可调电镀种子步骤覆盖方法
公开(公告)号：US08670213B1
公开(公告)日：2014-03-11
申请号：US13422997
申请日：2012-03-16
申请人： Wanxue Zeng , Weimin Si , Ying Hong , Zhigang Bai
发明人： Wanxue Zeng , Weimin Si , Ying Hong , Zhigang Bai
IPC分类号： G11B5/23 , B44C1/22
CPC分类号： G11B5/232 , G11B5/235 , G11B5/3116 , G11B5/3163
摘要： A writer main pole for a perpendicular magnetic recording system is provided. The writer pole has a tunable bottom gap to side gap ratio, and may be formed using deposition of a first seed layer through an ion beam deposition process, deposition of a second seed layer through a physical vapor deposition process, and deposition of a non-magnetic gap layer through a chemical vapor deposition process.
摘要翻译：提供了一种用于垂直磁记录系统的写入器主极。写入器极具有可调节的底部间隙与侧面间隙比，并且可以通过通过离子束沉积工艺沉积第一种子层，通过物理气相沉积工艺沉积第二籽晶层，磁隙层通过化学气相沉积工艺。

20. 发明授权

US08225488B1 Method for providing a perpendicular magnetic recording (PMR) pole 有权
标题翻译：提供垂直磁记录（PMR）极的方法
公开(公告)号：US08225488B1
公开(公告)日：2012-07-24
申请号：US12471278
申请日：2009-05-22
申请人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
发明人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for providing a PMR pole in a magnetic recording transducer comprises providing a mask on an intermediate layer, the mask including a line having at least one side, providing a hard mask on the mask, a first portion of the hard mask residing on the at least one side and a second portion residing on a surface of the intermediate layer, the hard mask including a dry-etchable layer and a high removal ratio layer on the dry-etchable layer, removing at least part of the first portion of the hard mask, at least a portion of the line being exposed, removing the line, thereby providing an aperture in the hard mask corresponding to the line, forming a trench in the intermediate layer under the aperture using a removal process, and providing the PMR pole, at least a portion of the PMR pole residing in the trench.
摘要翻译：用于在磁记录换能器中提供PMR极的方法包括在中间层上提供掩模，所述掩模包括具有至少一个侧面的线，在所述掩模上提供硬掩模，所述硬掩模的位于所述掩模上的第一部分驻留在中间层的表面上的至少一个侧面和第二部分，该硬掩模包括在该可干蚀刻层上的可干蚀刻层和高去除率层，去除硬的第一部分的至少一部分掩模，线的至少一部分被暴露，去除线，从而在对应于线的硬掩模中提供孔，使用去除过程在孔下方的中间层中形成沟槽，以及提供PMR极， PMR极的至少一部分位于沟槽中。

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