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11. 发明授权

US07655990B2 Voltage-clipping device with high breakdown voltage 有权
标题翻译：具有高击穿电压的钳位装置
公开(公告)号：US07655990B2
公开(公告)日：2010-02-02
申请号：US11424530
申请日：2006-06-15
申请人： Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
发明人： Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
IPC分类号： H01L29/94
CPC分类号： H01L29/808
摘要： The present invention proposes a voltage-clipping device utilizing a pinch-off mechanism formed by two depletion boundaries. A clipping voltage of the voltage-clipping device can be adjusted in response to a gate voltage; a gap of a quasi-linked well; and a doping concentration and a depth of the quasi-linked well and a well with complementary doping polarity to the quasi-linked well. The voltage-clipping device can be integrated within a semiconductor device as a voltage stepping down device in a tiny size, compared to traditional transformers.
摘要翻译：本发明提出了利用由两个耗尽边界形成的夹断机构的电压剪切装置。可以响应于栅极电压来调节电压限幅装置的限幅电压; 准连接井的缺口; 以及准连接阱的掺杂浓度和深度以及与准连接阱具有互补掺杂极性的阱。与传统的变压器相比，电压钳位装置可以与微型尺寸的电压降压装置集成在半导体器件内。

12. 发明申请

US20080278279A1 Semiconductor structure with high breakdown voltage and resistance and method for manufacturing the same 有权
标题翻译：具有高击穿电压和电阻的半导体结构及其制造方法
公开(公告)号：US20080278279A1
公开(公告)日：2008-11-13
申请号：US11798206
申请日：2007-05-11
申请人： Chiu-Chih Chiang , Chih-Feng Huang
发明人： Chiu-Chih Chiang , Chih-Feng Huang
IPC分类号： H01C1/012 , H01L27/08
CPC分类号： H01L28/20
摘要： A semiconductor structure with high breakdown voltage and high resistance and method for manufacturing the same. The semiconductor structure at least comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; two first wells having the first conductive type and formed within the deep well; a second well having the first conductive type and formed between two first wells within the deep well, and a implant dosage of the second well lighter than a implant dosage of the first well; and two first doping regions having the first conductive type and respectively formed within the first wells.
摘要翻译：具有高击穿电压和高电阻的半导体结构及其制造方法。半导体结构至少包括具有第一导电类型的衬底; 在衬底中形成有第二导电类型的深阱; 具有第一导电类型并形成在深井内的两个第一阱; 具有第一导电类型并形成在深井内的两个第一阱之间的第二阱和比第一阱的植入物剂量轻的第二阱的植入剂量; 和具有第一导电类型并分别形成在第一阱内的两个第一掺杂区域。

13. 发明申请

US20080116539A1 Schottky device and process of making the same 有权
标题翻译：肖特基器件和制作过程相同
公开(公告)号：US20080116539A1
公开(公告)日：2008-05-22
申请号：US11601131
申请日：2006-11-17
申请人： Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
发明人： Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
IPC分类号： H01L29/872 , H01L21/329
CPC分类号： H01L29/872 , H01L29/0692
摘要： A Schottky device and a semiconductor process of making the same are provided. The Schottky device comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped region with the second type of ions in the deep well. Wherein the deep well has a geometry gap with a width formed under the Schottky contact, the first type of ions and the second type of ions are complementary, and the width of the gap adjusts the breakdown voltage. In addition, the semiconductor process comprises the steps of forming a deep well with a second type of ions in a substrate with a first type of ions; forming a first doped region with the first type of ions; forming an oxide layer; forming a second doped region in the deep well with the first type of ions; forming a heavily doped region in the deep well with the second type of ions; and forming a first electrode on a Schottky contact on the deep well and a second electrode on an Ohmic contact on the heavily doped region.
摘要翻译：提供了一种肖特基器件及其制造方法。肖特基器件包括衬底，深阱，肖特基接触和欧姆接触。衬底掺杂有第一类型的离子。深阱掺杂有第二类离子，并形成在衬底中。肖特基接触器与深井接触第一电极。欧姆接触接触具有重掺杂区域的第二电极，第二种类型的离子在深阱中。其中深阱具有在肖特基接触下形成的宽度的几何间隙，第一类型的离子和第二类型的离子是互补的，并且间隙的宽度调节击穿电压。此外，半导体工艺包括以下步骤：在具有第一类型离子的衬底中形成具有第二类型离子的深阱; 形成具有所述第一类型离子的第一掺杂区域; 形成氧化物层; 在所述深井中用所述第一类型的离子形成第二掺杂区域; 在深井中用第二类离子形成重掺杂区; 以及在深阱上的肖特基接触上形成第一电极，在重掺杂区域上的欧姆接触上形成第二电极。

14. 发明申请

US20080061374A1 Semiconductor resistor and semiconductor process of making the same 审中-公开
标题翻译：半导体电阻和半导体制程相同
公开(公告)号：US20080061374A1
公开(公告)日：2008-03-13
申请号：US11516982
申请日：2006-09-07
申请人： Chiu-Chih Chiang , Chih-Feng Huang
发明人： Chiu-Chih Chiang , Chih-Feng Huang
IPC分类号： H01L29/76
CPC分类号： H01L29/8605
摘要： A semiconductor resistor and a semiconductor process of making the same are provided. The semiconductor resistor comprises a substrate, a deep well, at least two contact regions, and a doped region. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The contact regions are heavily doped with the second type of ions, and formed in the deep well. The doped region is doped with the first type of ions, and is separated from the deep well by a distance. Wherein the first type of ions and the second type of ions are complementary, and the distance between the deep well and the doped region adjusts the breakdown voltage. In addition, the semiconductor process comprises the steps of forming a deep well containing a first type of ions; forming a doped region containing a second type of ions; forming an oxide layer; and forming at least two contact regions containing the first type of ions in the deep well.
摘要翻译：提供半导体电阻器及其制造方法。半导体电阻器包括衬底，深阱，至少两个接触区域和掺杂区域。衬底掺杂有第一类型的离子。深阱掺杂有第二类离子，并形成在衬底中。接触区域被第二类离子重掺杂，形成在深阱中。掺杂区域掺杂有第一类离子，并与深阱分离一定距离。其中第一类离子和第二类离子是互补的，并且深阱和掺杂区之间的距离调节击穿电压。此外，半导体工艺包括形成含有第一类型离子的深阱的步骤; 形成含有第二类离子的掺杂区; 形成氧化物层; 以及在所述深井中形成含有所述第一类型离子的至少两个接触区域。

15. 发明申请

US20080023786A1 Semiconductor structure of a high side driver and method for manufacturing the same 有权
标题翻译：高侧驱动器的半导体结构及其制造方法
公开(公告)号：US20080023786A1
公开(公告)日：2008-01-31
申请号：US11492039
申请日：2006-07-25
申请人： Chiu-Chih Chiang , Chih-Feng Huang
发明人： Chiu-Chih Chiang , Chih-Feng Huang
IPC分类号： H01L29/00
CPC分类号： H01L29/10 , H01L29/063 , H01L29/7835
摘要： A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate, a first deep well and a second deep well, a first heavy ion-doped region and a second heavy ion-doped region. The first deep well and second deep well are formed in the substrate, which are separated but partially linked with each other, and the first deep well and the second deep well have the same ion-doped type. The first heavy ion-doped region is formed in the first deep well for connecting to a first high voltage, and the first heavy ion-doped region has the same ion-doped type as the first deep well. The second heavy ion-doped region is formed in the second deep well for connecting to a second high voltage, and the second heavy ion-doped region has the same ion-doped type as the first deep well.
摘要翻译：高侧驱动器的半导体结构包括离子掺杂结。离子掺杂结包括衬底，第一深阱和第二深阱，第一重离子掺杂区和第二重离子掺杂区。第一深阱和第二深阱形成在衬底中，其被分离但部分地彼此连接，并且第一深阱和第二深阱具有相同的离子掺杂型。第一重离子掺杂区域形成在第一深阱中以连接到第一高电压，并且第一重离子掺杂区域具有与第一深阱相同的离子掺杂类型。第二重离子掺杂区域形成在第二深阱中用于连接到第二高电压，并且第二重离子掺杂区域具有与第一深阱相同的离子掺杂类型。

16. 发明申请

US20070247225A1 Switching circuit of power converter having voltage-clipping device to improve efficiency 有权
标题翻译：具有电压钳位装置的功率转换器的开关电路，以提高效率
公开(公告)号：US20070247225A1
公开(公告)日：2007-10-25
申请号：US11407537
申请日：2006-04-19
申请人： Chih-Feng Huang , Chiu-Chih Chiang , You-Kuo Wu , Wei-Hsuan Huang , Ta-yung Yang
发明人： Chih-Feng Huang , Chiu-Chih Chiang , You-Kuo Wu , Wei-Hsuan Huang , Ta-yung Yang
IPC分类号： H03F1/36
CPC分类号： H02M1/36 , H02M2001/0006
摘要： A switching circuit for power converters is presented. It includes a voltage-clipping device, a resistive device, a first transistor and a second transistor. The voltage-clipping device is coupled to an input voltage. The first transistor is connected in series with the voltage-clipping device for switching the input voltage. The second transistor is coupled to control the first transistor and the voltage-clipping device in response to a control signal. The resistive device provides a bias voltage to turn on the voltage-clipping device and the first transistor when the second transistor is turned off. Once the second transistor is turned on, the first transistor is turned off and the voltage-clipping device is negatively biased. The voltage-clipping device is developed to clamp a maximum voltage for the first transistor.
摘要翻译：提出了一种电源转换器的开关电路。它包括电压限幅装置，电阻装置，第一晶体管和第二晶体管。电压限幅装置耦合到输入电压。第一晶体管与用于切换输入电压的电压限幅装置串联连接。第二晶体管被耦合以响应于控制信号来控制第一晶体管和电压限幅装置。当第二晶体管截止时，电阻器件提供偏置电压以接通压限器件和第一晶体管。一旦第二晶体管导通，第一晶体管被截止并且电压限幅器件被负偏置。钳位装置被开发以钳位第一晶体管的最大电压。

17. 发明授权

US07888704B2 Semiconductor device for electrostatic discharge protection 有权
标题翻译：用于静电放电保护的半导体器件
公开(公告)号：US07888704B2
公开(公告)日：2011-02-15
申请号：US12222746
申请日：2008-08-15
申请人： Chiu-Chih Chiang , Han-Chung Tai
发明人： Chiu-Chih Chiang , Han-Chung Tai
IPC分类号： H01L29/74
CPC分类号： H01L27/0262 , H01L29/7436
摘要： A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The diode, coupled to the HVSCR in series, also has an anode and a cathode. The anode of the diode is coupled to the anode of the HVSCR, and the cathode of the diode is coupled to a terminal applied with a positive voltage. The diode has a second conductivity type zone that could be constructed to form several strips or small blocks spaced apart from each other. Those small blocks could be any shapes and arranged regularly or randomly.
摘要翻译：公开了一种用于静电放电保护的半导体器件，并且至少包括高压寄生器可控硅整流器（HVSCR）和二极管。 HVSCR具有阳极和阴极，HVSCR的阴极耦合到地面。串联连接到HVSCR的二极管也具有阳极和阴极。二极管的阳极耦合到HVSCR的阳极，二极管的阴极耦合到施加正电压的端子。二极管具有第二导电类型区域，其可以构造成形成彼此间隔开的几个条或小块。这些小块可以是任何形状，并定期或随机排列。

18. 发明申请

US20100038677A1 Semiconductor device for electrostatic discharge protection 有权
标题翻译：用于静电放电保护的半导体器件
公开(公告)号：US20100038677A1
公开(公告)日：2010-02-18
申请号：US12222746
申请日：2008-08-15
申请人： Chiu-Chih Chiang , Han-Chung Tai
发明人： Chiu-Chih Chiang , Han-Chung Tai
IPC分类号： H01L29/74
CPC分类号： H01L27/0262 , H01L29/7436
摘要： A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The diode, coupled to the HVSCR in series, also has an anode and a cathode. The anode of the diode is coupled to the anode of the HVSCR, and the cathode of the diode is coupled to a terminal applied with a positive voltage. The diode has a second conductivity type zone that could be constructed to form several strips or small blocks spaced apart from each other. Those small blocks could be any shapes and arranged regularly or randomly.
摘要翻译：公开了一种用于静电放电保护的半导体器件，并且至少包括高压寄生器可控硅整流器（HVSCR）和二极管。 HVSCR具有阳极和阴极，并且HVSCR的阴极耦合到地面。串联连接到HVSCR的二极管也具有阳极和阴极。二极管的阳极耦合到HVSCR的阳极，二极管的阴极耦合到施加正电压的端子。二极管具有第二导电类型区域，其可以构造成形成彼此间隔开的几个条或小块。这些小块可以是任何形状，并定期或随机排列。

19. 发明授权

US07615976B2 Switching circuit of power converter having voltage-clipping device to improve efficiency 有权
标题翻译：具有电压钳位装置的功率转换器的开关电路，以提高效率
公开(公告)号：US07615976B2
公开(公告)日：2009-11-10
申请号：US11407537
申请日：2006-04-19
申请人： Chih-Feng Huang , Chiu-Chih Chiang , You-Kuo Wu , Wei-Hsuan Huang , Ta-yung Yang
发明人： Chih-Feng Huang , Chiu-Chih Chiang , You-Kuo Wu , Wei-Hsuan Huang , Ta-yung Yang
IPC分类号： G05F1/00
CPC分类号： H02M1/36 , H02M2001/0006
摘要： A switching circuit for power converters is presented. It includes a voltage-clipping device, a resistive device, a first transistor and a second transistor. The voltage-clipping device is coupled to an input voltage. The first transistor is connected in series with the voltage-clipping device for switching the input voltage. The second transistor is coupled to control the first transistor and the voltage-clipping device in response to a control signal. The resistive device provides a bias voltage to turn on the voltage-clipping device and the first transistor when the second transistor is turned off. Once the second transistor is turned on, the first transistor is turned off and the voltage-clipping device is negatively biased. The voltage-clipping device is developed to clamp a maximum voltage for the first transistor.
摘要翻译：提出了一种电源转换器的开关电路。它包括电压限幅装置，电阻装置，第一晶体管和第二晶体管。电压限幅装置耦合到输入电压。第一晶体管与用于切换输入电压的电压限幅装置串联连接。第二晶体管被耦合以响应于控制信号来控制第一晶体管和电压限幅装置。当第二晶体管截止时，电阻器件提供偏置电压以接通压限器件和第一晶体管。一旦第二晶体管导通，第一晶体管被截止并且电压限幅器件被负偏置。钳位装置被开发以钳位第一晶体管的最大电压。

20. 发明授权

US07589393B2 Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same 有权
标题翻译：具有部分连接的深井的两个高压节点的高侧驱动器的半导体结构及其制造方法
公开(公告)号：US07589393B2
公开(公告)日：2009-09-15
申请号：US11492039
申请日：2006-07-25
申请人： Chiu-Chih Chiang , Chih-Feng Huang
发明人： Chiu-Chih Chiang , Chih-Feng Huang
IPC分类号： H01L29/06
CPC分类号： H01L29/10 , H01L29/063 , H01L29/7835
摘要： A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate, a first deep well and a second deep well, a first heavy ion-doped region and a second heavy ion-doped region. The first deep well and second deep well are formed in the substrate, which are separated but partially linked with each other, and the first deep well and the second deep well have the same ion-doped type. The first heavy ion-doped region is formed in the first deep well for connecting to a first high voltage, and the first heavy ion-doped region has the same ion-doped type as the first deep well. The second heavy ion-doped region is formed in the second deep well for connecting to a second high voltage, and the second heavy ion-doped region has the same ion-doped type as the first deep well.
摘要翻译：高侧驱动器的半导体结构包括离子掺杂结。离子掺杂结包括衬底，第一深阱和第二深阱，第一重离子掺杂区和第二重离子掺杂区。第一深阱和第二深阱形成在衬底中，其被分离但部分地彼此连接，并且第一深阱和第二深阱具有相同的离子掺杂型。第一重离子掺杂区域形成在第一深阱中以连接到第一高电压，并且第一重离子掺杂区域具有与第一深阱相同的离子掺杂类型。第二重离子掺杂区域形成在第二深阱中用于连接到第二高电压，并且第二重离子掺杂区域具有与第一深阱相同的离子掺杂类型。

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