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11. 发明申请

US20090267256A1 Insert molding die, insert molding apparatus and insert molding method 有权
标题翻译：插入成型模具，嵌件成型设备和嵌件成型方法
公开(公告)号：US20090267256A1
公开(公告)日：2009-10-29
申请号：US12379836
申请日：2009-03-03
申请人： Tsuyoshi Arai , Masayuki Furuhashi , Sayaka Okabe
发明人： Tsuyoshi Arai , Masayuki Furuhashi , Sayaka Okabe
IPC分类号： B29C47/00 , B29C45/03
CPC分类号： B29C43/18 , B29C47/0023 , B29C47/0033 , B29C47/0038 , B29C47/0054 , B29C49/04 , B29C2043/3433 , B29C2791/001 , B29C2791/006 , B29K2105/258 , B29L2031/3406
摘要： An insert molding die, an insert molding apparatus and an insert molding method are disclosed, wherein a pair of dies 10a, 10b are arranged in a manner capable of clamping, from axis X side, an insert part 2 arranged along axis X to be insert molded. The dies 10a, 10b include first separated dies 10a1, 10b1, second separated dies 10a2, 10b2 and third separated dies 10a3, 10b3 adapted to perform the clamp operation independently of each other.
摘要翻译：公开了一种插入成形用模具，嵌入成型装置以及插入成型方法，其中，一对模具10a，10b以能够从轴线X侧夹持沿着X轴方向插入的插入部2插入的方式配置模制。模具10a，10b包括第一分离的模具10a1,10b1，第二分离的模具10a2,10b2和适于彼此独立地执行夹紧操作的第三分离的模具10a3,10b3。

12. 发明授权

US07261854B2 Insert molding technique 失效
标题翻译：插入成型技术
公开(公告)号：US07261854B2
公开(公告)日：2007-08-28
申请号：US10781346
申请日：2004-02-18
申请人： Tsuyoshi Arai , Masayuki Furuhashi
发明人： Tsuyoshi Arai , Masayuki Furuhashi
IPC分类号： B29C43/18 , B29C51/10
CPC分类号： B29C70/72 , B29C49/04 , B29C49/20 , B29C65/02 , B29C65/08 , B29C65/16 , B29C66/54 , B29C66/71 , B29C66/73715 , B29C66/82661 , B29C2791/001 , B29C2791/006 , B29K2995/0067 , B29K2067/006
摘要： An insert component (2) is located at a predetermined position between a pair of halves of a mold (1) in an open state while being held by a support (12) for holding the insert component (2) outside the mold. A tubular molten resin (4) is extruded through a die (3) between the pair of halves of the mold (1) to dispose the insert component (2) in the interior space (13) of the molten resin (4). By clamping the mold (1), the insert component (2) is covered with the tubular molten resin (4) in conformity with the contour thereof to result in an insert-mold product (20).
摘要翻译：插入部件（2）位于处于打开状态的模具（1）的一对半部之间的预定位置处，同时由用于将插入部件（2）保持在模具外部的支撑件（12）保持。管状熔融树脂（4）通过模具（1）的一对半部之间的模具（3）挤出，以将插入部件（2）设置在熔融树脂（4）的内部空间（13）中。通过夹紧模具（1），插入部件（2）根据其轮廓被管状熔融树脂（4）覆盖以产生插入模制品（20）。

13. 发明授权

US09076761B2 Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US09076761B2
公开(公告)日：2015-07-07
申请号：US14116259
申请日：2012-05-31
申请人： Tomokatsu Watanabe , Naruhisa Miura , Masayuki Furuhashi , Shiro Hino , Toshikazu Tanioka
发明人： Tomokatsu Watanabe , Naruhisa Miura , Masayuki Furuhashi , Shiro Hino , Toshikazu Tanioka
IPC分类号： H01L29/417 , H01L29/10 , H01L29/78 , H01L29/66 , H01L29/08 , H01L29/16
CPC分类号： H01L29/41741 , H01L29/086 , H01L29/105 , H01L29/1608 , H01L29/41725 , H01L29/41766 , H01L29/66068 , H01L29/7802 , H01L29/7827
摘要： A silicon carbide semiconductor device that is able to increase the gate reliability, and to provide a method for manufacturing the silicon carbide semiconductor device, and that includes: a source electrode selectively formed on a source region; a gate insulating film formed so as to extend over the source region; and a gate electrode formed on the gate insulating film. The source region includes a first source region located below the source electrode, and a second source region surrounding the first source region. The doping concentration in a superficial layer of the second source region is lower than the doping concentration in a superficial layer of the first source region. The doping concentration in the second source region is higher in a deep portion than in a superficial portion thereof.
摘要翻译：一种能够提高栅极可靠性并提供一种制造碳化硅半导体器件的方法的碳化硅半导体器件，其包括：源极选择性地形成在源极区上; 形成为在源极区域上延伸的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。源极区包括位于源电极下方的第一源极区域和围绕第一源极区域的第二源极区域。第二源极区的表面层中的掺杂浓度低于第一源区的表面层中的掺杂浓度。第二源极区域中的掺杂浓度在深部比在其表面部分高。

14. 发明申请

US20050126308A1 Rotation detecting device and method of manufacturing same 审中-公开
标题翻译：旋转检测装置及其制造方法
公开(公告)号：US20050126308A1
公开(公告)日：2005-06-16
申请号：US10974680
申请日：2004-10-28
申请人： Hiroyuki Tsuge , Masayuki Furuhashi
发明人： Hiroyuki Tsuge , Masayuki Furuhashi
IPC分类号： G01P3/487 , G01D5/245 , G01L1/00 , G01P1/02 , G01P3/488
CPC分类号： G01P3/488 , G01P1/026
摘要： A rotation detecting device includes a housing that has an open end, a bottom end and an inside wall, and a rotation sensing unit disposed inside the housing. The rotation sensing unit includes an IC unit and a shape adjusting member that covers the IC unit. The shape adjusting member has an outer periphery fitted to the inside wall of the housing to hold the IC unit tight in the housing.
摘要翻译：旋转检测装置包括具有开口端，底端和内壁的壳体和设置在壳体内部的旋转感测单元。旋转感测单元包括IC单元和覆盖IC单元的形状调整构件。形状调节构件具有安装在壳体的内壁上的外周，以将IC单元紧固在壳体中。

15. 发明授权

US06800538B2 Semiconductor device fabrication method and semiconductor fabrication control method 有权
标题翻译：半导体器件制造方法和半导体制造控制方法
公开(公告)号：US06800538B2
公开(公告)日：2004-10-05
申请号：US10695650
申请日：2003-10-29
申请人： Masayuki Furuhashi , Mitsuaki Hori
发明人： Masayuki Furuhashi , Mitsuaki Hori
IPC分类号： H01L21336
CPC分类号： H01L21/3081 , H01L21/02052 , H01L21/3003 , H01L21/30604 , H01L21/324
摘要： The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10, the method further comprises, before the step of forming the gate insulation film, the step of forming an insulation film 12, covering a first side (upper side) and a second side (underside) of the semiconductor substrate 10, the step of etching off the insulation film 12 on the first side of the semiconductor substrate 10, and the step of annealing the semiconductor substrate 10 with the insulation film 12 present on the second side of the semiconductor substrate 10. The semiconductor film 12 on the second side of the semiconductor substrate 10 is removed, and the semiconductor substrate 10 is heat-treated with the insulation film 12 present on the second side of the semiconductor substrate 10, whereby even when the annealing is performed at high temperature, the sublimation of semiconductor constituent atoms from the second side of the semiconductor substrate 10 can be prevented. Accordingly, the adhesion of the semiconductor constituent atoms to the temperature sensor, etc. can be prevented, which permits semiconductor devices to be fabricated without complicated maintenance. Thus, semiconductor devices can be fabricated with high fabrication efficiency.
摘要翻译：制造半导体器件的方法包括在半导体衬底10上形成栅极绝缘膜的步骤，该方法还包括在形成栅极绝缘膜的步骤之前，形成绝缘膜12的步骤，覆盖第一侧（上侧）和第二面（下侧），蚀刻半导体衬底10的第一侧上的绝缘膜12的步骤以及用绝缘膜12退火半导体衬底10的步骤存在于半导体衬底10的第二侧上。去除半导体衬底10的第二侧上的半导体膜12，并且半导体衬底10用半导体衬底的第二面上存在的绝缘膜12进行热处理如图10所示，即使当在高温下进行退火时，半导体组成原子从半导体su的第二侧升华可以防止臀部10。因此，可以防止半导体组成原子对温度传感器等的粘合，这允许在不需要复杂维护的情况下制造半导体器件。因此，可以以高制造效率制造半导体器件。

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