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    • 13. 发明申请
    • DETECTION APPARATUS AND DETECTION SYSTEM
    • 检测装置和检测系统
    • US20130099093A1
    • 2013-04-25
    • US13610472
    • 2012-09-11
    • Jun KawanabeChiori MochizukiMinoru WatanabeMasato OfujiKeigo YokoyamaKentaro FujiyoshiHiroshi Wayama
    • Jun KawanabeChiori MochizukiMinoru WatanabeMasato OfujiKeigo YokoyamaKentaro FujiyoshiHiroshi Wayama
    • G01J1/44H01L27/00
    • H01L27/14609H01L27/14665
    • A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.
    • 检测装置包括设置在基板上的晶体管,设置在晶体管上方并连接到晶体管的转换元件,与转换元件并联连接到晶体管的电容器,电容器包括在基板和转换元件之间的欧姆 连接到转换元件的接触部分,连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分,以及电位供给单元,被配置为选择性地 向导电部分提供第一电位,以将半导体部件中的电荷载流子积累,并且向导电部件累积第二电位以耗尽半导体部件。 以上述方式配置的检测装置能够控制像素电容,从而实现高的信噪比。