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11. 发明授权

US08372212B2 Supercritical drying method and apparatus for semiconductor substrates 有权
标题翻译：半导体衬底的超临界干燥方法和装置
公开(公告)号：US08372212B2
公开(公告)日：2013-02-12
申请号：US13369970
申请日：2012-02-09
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/04
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译：根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。房间包含SUS。对室的内壁面进行电解抛光。

12. 发明授权

US07767006B2 Ozone processing apparatus and ozone processing method 失效
标题翻译：臭氧处理装置和臭氧处理方法
公开(公告)号：US07767006B2
公开(公告)日：2010-08-03
申请号：US10581729
申请日：2004-12-16
申请人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
发明人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
IPC分类号： B01D59/26
CPC分类号： H01L21/68721 , B01D53/002 , B01D2257/106 , C01B13/10 , H01L21/6715 , H01L21/68742 , H01L21/68785
摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.
摘要翻译：将水蒸气与由排放型臭氧发生器产生的O 3气体混合。混合流体被冷却器冷却，从而O 3气体中所含的金属和氮氧化物等杂质溶解在冷凝水中。随后，气液分离器将O 3气体与冷凝水分离。水蒸汽再次与O3气体混合。混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

13. 发明授权

US08651121B2 Substrate processing apparatus, substrate processing method, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US08651121B2
公开(公告)日：2014-02-18
申请号：US12372265
申请日：2009-02-17
申请人： Takehiko Orii , Kenji Sekiguchi
发明人： Takehiko Orii , Kenji Sekiguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.
摘要翻译：一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。

14. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

15. 发明申请

US20130019905A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS 有权
标题翻译：半导体基板和超临界干燥装置的超临界干燥方法
公开(公告)号：US20130019905A1
公开(公告)日：2013-01-24
申请号：US13420870
申请日：2012-03-15
申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/10 , F26B3/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

16. 发明申请

US20120304485A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理方法，基板处理装置和存储介质
公开(公告)号：US20120304485A1
公开(公告)日：2012-12-06
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： F26B7/00
CPC分类号： H01L21/67028 , B08B7/0021 , H01L21/02057 , H01L21/02101
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
摘要翻译：一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷，将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

17. 发明申请

US20120187088A1 LIQUID PROCESSING METHOD, LIQUID PROCESSING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：液体加工方法，液体加工设备和储存介质
公开(公告)号：US20120187088A1
公开(公告)日：2012-07-26
申请号：US13355709
申请日：2012-01-23
申请人： Hiroki Ohno , Takehiko Orii
发明人： Hiroki Ohno , Takehiko Orii
IPC分类号： B44C1/22
CPC分类号： H01L21/31111 , H01L21/6708
摘要： There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature.
摘要翻译：提供了一种液体处理方法和液体处理装置，其能够提供氮化硅相对于氧化硅的高蚀刻速率和高蚀刻选择性，以及在其上存储该方法的存储介质。在蚀刻方法中，通过蚀刻溶液，暴露有氮化硅和氧化硅的衬底，通过混合氟离子源材料，水和沸点调节剂来制备蚀刻溶液; 将生成的蚀刻溶液加热到140℃以上的基板处理温度。在蚀刻溶液的温度达到基板处理温度之后，将蚀刻溶液的温度保持在基板处理温度第一预设时间; 在经过第一预设时间之后，通过保持在衬底处理温度的蚀刻溶液来蚀刻衬底。

18. 发明申请

US20070107751A1 Ozone processing apparatus and ozone processing method 失效
标题翻译：臭氧处理装置和臭氧处理方法
公开(公告)号：US20070107751A1
公开(公告)日：2007-05-17
申请号：US10581729
申请日：2004-12-16
申请人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
发明人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
IPC分类号： B08B7/04 , C23G1/00 , B08B3/00
CPC分类号： H01L21/68721 , B01D53/002 , B01D2257/106 , C01B13/10 , H01L21/6715 , H01L21/68742 , H01L21/68785
摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.
摘要翻译：将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。随后，气液分离器从冷凝水中分离出O 3 N 3气体。水蒸汽再次与O 3 3气体混合。混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

19. 发明授权

US06513537B1 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06513537B1
公开(公告)日：2003-02-04
申请号：US09702679
申请日：2000-11-01
申请人： Takehiko Orii , Hiroki Ohno , Takashi Yabuta
发明人： Takehiko Orii , Hiroki Ohno , Takashi Yabuta
IPC分类号： B08B600
CPC分类号： H01L21/02071 , G03F7/405 , H01L21/6708 , H01L21/76814
摘要： The present invention relates to a method of removing a polymer veil and a metal contamination deposited on a substrate having a metal layer. First, the polymer veils are removed by a chemical liquid in an inert gas atmosphere. Subsequently, the metal contamination are removed by oxidizing the metal contamination into metal oxide contamination by mixing oxygen in a small concentration in the inert gas atmosphere, and dissolving the metal oxide contamination by the chemical liquid.
摘要翻译：本发明涉及去除聚合物面纱和沉积在具有金属层的基底上的金属污染物的方法。首先，通过化学液体在惰性气体气氛中除去聚合物面纱。随后，通过在惰性气体气氛中混合少量氧气并将金属氧化物污染物溶解在化学液体中，将金属污染物氧化成金属氧化物污染物，去除金属污染物。

20. 发明授权

US07691210B2 Resist film removing method 失效
标题翻译：抗蚀膜去除方法
公开(公告)号：US07691210B2
公开(公告)日：2010-04-06
申请号：US11543819
申请日：2006-10-06
申请人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
发明人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
IPC分类号： B08B3/00
CPC分类号： G03F7/42 , G03F7/423
摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
摘要翻译：用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

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