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11. 发明授权

US07772840B2 Eddy current testing method 有权
标题翻译：涡流检测方法
公开(公告)号：US07772840B2
公开(公告)日：2010-08-10
申请号：US12634156
申请日：2009-12-09
申请人： Yutaka Suzuki , Masahiro Koike , Tetsuya Matsui , Kojirou Kodaira , Katsumi Isaka , Mitsuru Odakura , Kenji Tayama , Kazuhiro Suzuki , Kenji Kumasaka , Yuuji Adachi
发明人： Yutaka Suzuki , Masahiro Koike , Tetsuya Matsui , Kojirou Kodaira , Katsumi Isaka , Mitsuru Odakura , Kenji Tayama , Kazuhiro Suzuki , Kenji Kumasaka , Yuuji Adachi
IPC分类号： G01N27/87 , G01N27/90 , G01R33/00
CPC分类号： G01N27/902
摘要： The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.
摘要翻译：涡流检测装置包括具有包括一对涡流检测线圈的涡流检测传感器的探头。该设备还包括涡流测试探伤仪输入来自涡流测试传感器的检测信号。在一对涡流测试线圈中使用的磁芯的直径在0.1mm至0.5mm的范围内。

12. 发明授权

US07448861B2 Resin molded semiconductor device and mold 有权
标题翻译：树脂模制半导体器件和模具
公开(公告)号：US07448861B2
公开(公告)日：2008-11-11
申请号：US11235182
申请日：2005-09-27
申请人： Masahiro Koike , Hirochika Narita
发明人： Masahiro Koike , Hirochika Narita
IPC分类号： B29C45/14 , H01L21/56
CPC分类号： H01L27/14825 , H01L23/047 , H01L23/10 , H01L27/14806 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/15747 , H01L2924/16195 , H01L2924/00014 , H01L2924/00
摘要： To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. Blackening treated iron or iron-based alloy is used as a material of a heat sink 11 having a one-dimensional CCD element 14 mounted thereon. The thermal coefficient of expansion of the heat sink 21 is matched with that of a hollow molded case 12 for integrally molding the heat sink 11 and a lead frame 20. A plurality of projections 21 formed on the side of the hollow molded case 12 are disposed at a bonding interface between the glass cap 13 which closes an upper opening of the hollow molded case 12 and side walls of hollow molded case 12.
摘要翻译：为了通过降低由于温度变化而安装在其上的具有一维CCD元件的CCD器件的屈曲来提供优异的图像。使用黑化处理的铁或铁基合金作为其上安装有一维CCD元件14的散热器11的材料。散热器21的热膨胀系数与用于一体地模制散热器11和引线框架20的中空模制壳体12的热膨胀系数相匹配。形成在中空成型壳体12一侧的多个突起21设置在封闭中空成型壳体12的上部开口的玻璃盖13和中空成型壳体12的侧壁之间的接合界面处。

13. 发明申请

US20080258264A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080258264A1
公开(公告)日：2008-10-23
申请号：US12137929
申请日：2008-06-12
申请人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
发明人： Yoshiki Kamata , Akira Nishiyama , Tsunehiro Ino , Yuuichi Kamimuta , Masahiro Koike
IPC分类号： H01L29/20 , H01L21/469
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/513
摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.
摘要翻译：公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

14. 发明申请

US20070229066A1 EDDY CURRENT FLAW DETECTION SENSOR AND METHOD 有权
标题翻译： EDDY电流检测传感器和方法
公开(公告)号：US20070229066A1
公开(公告)日：2007-10-04
申请号：US11680857
申请日：2007-03-01
申请人： Soshi Narishige , Akira Nishimizu , Masahiro Koike , Yoshiharu Abe , Yuuichi Narumi , Hirofumi Ouchi
发明人： Soshi Narishige , Akira Nishimizu , Masahiro Koike , Yoshiharu Abe , Yuuichi Narumi , Hirofumi Ouchi
IPC分类号： G01R33/14
CPC分类号： G01N27/902
摘要： An eddy current flaw detection sensor is provided which can detect a circumferential crack occurring at the deformed portion or peripheral portion thereof of a heat transfer tube with a high degree of sensitivity. Two excitation coils 1a, 1b cause eddy current B to flow in the axial direction of a tubular test object 31. A detection coil 2 disposed between the excitation coils 1a, 1b detects bypass eddy current D which flows in the circumferential direction of the test object 31 while bypassing a circumferential crack E. For this purpose, the coil axes of the excitation coils 1a, 1b are directed to the radial direction of the cylindrical protection member 3 and the coil axis of the detection coil 2 is directed to the axial direction of the protection member 3.
摘要翻译：提供一种涡流探伤传感器，其能够以高灵敏度检测在传热管的变形部分或其周边部分处发生的周向裂纹。两个励磁线圈1a，1b使涡电流B沿管状被检体31的轴向流动。布置在励磁线圈1a，1b之间的检测线圈2检测旁路涡流D，旁路涡流D绕过周向裂纹E而沿着测试对象31的圆周方向流动。为此，激励线圈1a的线圈轴，1b指向圆筒形保护构件3的径向，并且检测线圈2的线圈轴线指向保护构件3的轴向。

15. 发明申请

US20060186488A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060186488A1
公开(公告)日：2006-08-24
申请号：US11407066
申请日：2006-04-20
申请人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
发明人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/517 , H01L29/518
摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要翻译：公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键，以及形成在绝缘膜上方的电极。

16. 发明授权

US06326670B1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06326670B1
公开(公告)日：2001-12-04
申请号：US09522593
申请日：2000-03-10
申请人： Akira Nishiyama , Masahiro Koike
发明人： Akira Nishiyama , Masahiro Koike
IPC分类号： H01L31119
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28194 , H01L21/28211 , H01L21/28247 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31662 , H01L21/31691 , H01L29/41783 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66553 , H01L29/66575 , H01L29/66659 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a Si oxide film formed between a Si substrate and a metallic oxide film is prevented from growing when an annealing treatment is performed after the metallic oxide film is formed, and a method for manufacturing the same. A semiconductor device comprises a silicon substrate, a gate insulating film formed on the silicon substrate and made of the metallic oxide film, and a gate electrode formed on the gate insulating film, wherein an interface film formed between the gate insulating film and the Si substrate is thinner at the ends of the gate insulating film than in the center thereof.
摘要翻译：一种半导体器件包括在形成在Si衬底和金属氧化物膜之间形成的Si氧化物膜时，在形成金属氧化物膜之后进行退火处理时，可以防止生长Si氧化膜及其制造方法。1。一种半导体器件，包括硅基板，形成在硅基板上并由金属氧化物膜构成的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中形成在栅极绝缘膜和Si基板之间的界面膜在端部处较薄栅绝缘膜比其中心。

17. 发明授权

US4736630A Apparatus and method for sending out and receiving ultrasonic wave signals 失效
标题翻译：发送和接收超声波信号的装置和方法
公开(公告)号：US4736630A
公开(公告)日：1988-04-12
申请号：US891644
申请日：1986-08-01
申请人： Fuminobu Takahashi , Kazunori Koga , Satoshi Ogura , Masahiro Koike
发明人： Fuminobu Takahashi , Kazunori Koga , Satoshi Ogura , Masahiro Koike
IPC分类号： G01N29/26 , G01S15/89 , G10K11/34 , G01N29/00
CPC分类号： G01S15/8925 , G01N29/262 , G01S15/8918 , G01S15/8927 , G10K11/345 , G01S7/5209
摘要： An ultrasonic inspection apparatus and method in which a linear array of acoustic transmitters and receivers are disposed adjacent to a workpiece, and alternating potential source is connected to some of the acoustic transmitters to project a side lobe of an acoustic wave toward a specific zone of the workpiece. Thereafter, the connections between some of the acoustic transmitters and the potential source are automatically changed, to move the specific zone as many times as may be necessary to provided scanning of the workpiece.
摘要翻译：一种超声波检查装置和方法，其中声发射器和接收器的线性阵列邻近工件设置，并且交替的电位源连接到一些声发射器，以使声波的旁瓣朝向工件。此后，一些声发射器和电位源之间的连接被自动地改变，以便将特定区域移动到为了提供工件的扫描而需要的次数。

18. 发明授权

US4615217A Two-probe ultrasonic flaw detection apparatus 失效
标题翻译：双探头超声波探伤仪
公开(公告)号：US4615217A
公开(公告)日：1986-10-07
申请号：US709704
申请日：1985-03-08
申请人： Masahiro Koike , Fuminobu Takahashi , Satoshi Ogura , Kazunori Koga
发明人： Masahiro Koike , Fuminobu Takahashi , Satoshi Ogura , Kazunori Koga
IPC分类号： G01N29/04 , G01N29/11 , G01N29/26
CPC分类号： G01N29/11 , G01N29/4454 , G01N2291/044 , G01N2291/102 , G01N2291/2693 , G01N2291/2695
摘要： A two-probe ultrasonic flaw detection apparatus, in which an ultrasonic wave is transmitted from a transmission probe into an object being inspected and ultrasonic waves reflected from a reflection surface in the object are received by a reception probe, operates to determine the position at which the combined intensity of ultrasonic waves reflected from each part of the reflection surface form a maximum. The reception probe is then moved to the position of maximum reception intensity. The position of maximum reception intensity is determined using as input parameters the ultrasonic characteristics of the object being inspected and of the transmission and reception probes, and the position of the transmission probe and the angle of incidence of the ultrasonic wave into the object.
摘要翻译：一种双探头超声波探伤装置，其中超声波从传输探头传输到被检查物体中，并且由物体的反射面反射的超声波由接收探头接收，操作以确定位置从反射表面的每个部分反射的超声波的组合强度形成最大值。然后将接收探头移动到最大接收强度的位置。使用作为被检查对象的超声波特性和发送接收探头的输入参数以及发送探针的位置和超声波入射到对象中的角度来确定最大接收强度的位置。

19. 发明授权

US09304113B2 Heat-resistant ultrasonic sensor and installation method thereof 有权
标题翻译：耐热超声波传感器及其安装方法
公开(公告)号：US09304113B2
公开(公告)日：2016-04-05
申请号：US13474065
申请日：2012-05-17
申请人： Atsushi Baba , Yoshinori Musha , Masahiro Koike
发明人： Atsushi Baba , Yoshinori Musha , Masahiro Koike
IPC分类号： G01H11/08 , H01L41/22 , G01N29/22 , G01N29/24
CPC分类号： G01N29/228 , G01N29/245 , G01N2291/0289 , Y10T29/42
摘要： A heat-resistant ultrasonic sensor forms a piezo-electric ceramics film with a thickness of 0.5 mm or smaller and a Curie point of 200° C. or higher on a flexible metal plate. A thin metal film that is an electrode is attached to a top surface of the piezo-electric ceramics film and a metal wire mesh covers the thin metal film and is attached to a top surface of the thin metal film. A core of a heat-resistant coaxial cable is connected to the metal wire mesh at a connection point. The heat-resistant coaxial cable is fixed to the thin metal plate with a metal fixing member that is a ground portion. An electric insulating cover is attached to the thin metal plate and covers the piezo-electric ceramics film, the thin metal film, the metal wire mesh, the connection point, the fixing member, and the core of the coaxial cable.
摘要翻译：耐热超声波传感器在柔性金属板上形成厚度为0.5mm以下，居里点为200℃以上的压电陶瓷膜。作为电极的薄金属膜附着在压电陶瓷膜的上表面，金属丝网覆盖薄金属膜，并附着在金属薄膜的上表面。耐热同轴电缆的芯线在连接点处连接到金属丝网。耐热同轴电缆用作为接地部的金属固定部件固定在薄金属板上。电绝缘盖安装在薄金属板上，覆盖压电陶瓷膜，薄金属膜，金属丝网，连接点，固定件和同轴电缆芯。

20. 发明授权

US08616864B2 Axial flow fan 有权
标题翻译：轴流风机
公开(公告)号：US08616864B2
公开(公告)日：2013-12-31
申请号：US13001503
申请日：2009-06-15
申请人： Toshiyuki Nakamura , Masahiro Koike , Naoya Inada
发明人： Toshiyuki Nakamura , Masahiro Koike , Naoya Inada
IPC分类号： F04B35/04
CPC分类号： F04D25/08 , F04D25/0613 , F04D25/0693 , F04D29/52
摘要： An axial flow fan provided herein allows for a wide range of selection for placement of the fan and wiring of the lead wires. The axial flow fan includes a first lead wire engaging portion 17 configured to be engaged with a plurality of lead wires 15 such that the lead wires are pulled out therefrom into an outer space OS defined between a first flange 21 and a second flange 23 of a fan housing 3, a second lead wire engaging portion 19 configured to be engaged with the plurality of lead wires 15 such that the lead wires, which have been engaged with the first lead wire engaging portion 17 and pulled out therefrom into the outer space OS, are then pulled out toward the other side in the axial direction where the second flange 23 is positioned, and a third lead wire engaging portion 27 configured to be engaged with the plurality of lead wires 15 such that the lead wires, which have been engaged with the first lead wire engaging portion 17 and pulled out therefrom into the outer space OS, are then pulled out in the axial direction toward one side where the first flange 21 is positioned. The third lead wire engaging portion 27 is formed in the first flange 21 at a given distance from the first lead wire engaging portion 17.
摘要翻译：这里提供的轴流风扇允许宽范围的选择用于布置风扇和引线的布线。轴流风扇包括第一引线接合部分17，其被配置为与多个引线15接合，使得引线从其中被拉出到限定在第一凸缘21和第二凸缘21之间的外部空间OS中风扇壳体3，第二引线接合部分19，被配置为与多个引线15接合，使得已经与第一引线接合部分17接合并从其中被拉出到外部空间OS中的引线，然后在第二凸缘23所在的轴向方向上向另一侧拉出，以及第三引线接合部27，其被构造成与多根引线15接合，使得已经与然后将第一引线接合部17从外部空间OS中拉出，然后沿着轴向向第一凸缘21的一侧被拉出。第三引线接合部分27以与第一引线接合部分17相距给定的距离形成在第一凸缘21中。

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