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11. 发明授权

US06353063B1 Process for producing olefin polymer 失效
标题翻译：生产烯烃聚合物的方法
公开(公告)号：US06353063B1
公开(公告)日：2002-03-05
申请号：US09508513
申请日：2000-03-24
申请人： Masafumi Shimizu , Yoshiyuki Ishihama , Akihira Watanabe
发明人： Masafumi Shimizu , Yoshiyuki Ishihama , Akihira Watanabe
IPC分类号： C08F234
CPC分类号： C08F10/00 , C08F4/65908 , C08F4/65912 , C08F4/65925 , C08F10/02 , C08F210/16 , Y10S526/901 , Y10S526/904 , Y10S526/943 , C08F2/002 , C08F4/65916 , C08F210/08 , C08F2500/12 , C08F2500/18 , C08F2500/24 , C08F210/14
摘要： A process for producing a polyolefin in the presence of a transition metal-containing metallocene catalyst that maintains stable operation for long periods of time without suffering from adhesion of the produced polymer to the wall of a reactor or formation of a sheet-like polymer or a massive polymer. The process utilizes a transition metal-containing metallocene catalyst and an organoaluminum compound represented by formula: R1nAl(OR2)3−n, wherein R1 represents a C1-20 alkyl group, an aryl group, hydrogen or halogen; R2 represents a C1-20 alkyl group or an aryl group; and n is a number selected from 0≦n
摘要翻译：一种在含过渡金属茂金属催化剂存在下生产聚烯烃的方法，该方法在长时间内保持稳定的操作，而不会使生成的聚合物粘附到反应器的壁或形成片状聚合物或大量聚合物。该方法利用含过渡金属的茂金属催化剂和由式R1nAl（OR2）3-n表示的有机铝化合物，其中R1表示C1-20烷基，芳基，氢或卤素; R2表示C1-20烷基或芳基; 在聚合反应器壁温Tw（℃）和聚合温度Tr（℃））的条件下，n为选自0 <= n <3的数，满足关系式：0.5

12. 发明授权

US06239608B1 Method for analyzing schottky junction method for evaluating semiconductor wafer method for evaluating insulating film and schottky junction analyzing apparatus 失效
标题翻译：分析用于评价绝缘膜和肖特基结分析装置的半导体晶片方法的肖特基结方法的分析方法
公开(公告)号：US06239608B1
公开(公告)日：2001-05-29
申请号：US09330457
申请日：1999-06-11
申请人： Yu Zhu , Yoshiteru Ishimaru , Masafumi Shimizu
发明人： Yu Zhu , Yoshiteru Ishimaru , Masafumi Shimizu
IPC分类号： G01R3126
CPC分类号： H01L22/14 , G01R31/2632
摘要： A method for analyzing a Schottky junction of the present invention includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.
摘要翻译：用于分析本发明的肖特基结的方法包括获得肖特基势垒高度的电场依赖性的步骤，其显示形成在半导体晶片上的肖特基结的肖特基势垒高度与施加到在将反向偏压施加到肖特基结的情况下的肖特基结的界面。该方法包括以下步骤：将多个电压值的反向偏压施加到肖特基结; 测量流过所述肖特基结的电流的多个电流值和对应于所述多个电压值的反向偏置的所述肖特基结的多个电容值; 基于所述多个电流值和所述多个电容值，获得所述肖特基结的电流 - 电压特性和电容 - 电压特性; 计算通过将电容 - 电压特性相对于电压进行积分而示出耗尽层中的累积电荷与电压之间的相关性的耗尽层电荷 - 电压特性; 并且基于电流 - 电压特性和耗尽层电荷 - 电压特性获得肖特基势垒高度的电场依赖性。

13. 发明授权

US5912480A Heterojunction semiconductor device 失效
标题翻译：异质结半导体器件
公开(公告)号：US5912480A
公开(公告)日：1999-06-15
申请号：US665510
申请日：1996-06-18
申请人： Yu Zhu , Yoshiteru Ishimaru , Naoki Takahashi , Masafumi Shimizu
发明人： Yu Zhu , Yoshiteru Ishimaru , Naoki Takahashi , Masafumi Shimizu
IPC分类号： H01L29/872 , H01L21/338 , H01L29/205 , H01L29/47 , H01L29/778 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/205 , H01L29/475 , H01L29/7783
摘要： A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.
摘要翻译：异质结半导体器件包括由第一半导体制成的第一肖特基接触层，由第二半导体制成的第二肖特基接触层和金属电极。第一肖特基接触层，第二肖特基接触层和金属电极依次层叠在半导体基板上或层叠在半导体基板上的从基板侧或主结构侧的半导体器件的主结构上。第一肖特基接触层用作朝向第二肖特基接触层的阻挡层，并且第二肖特基接触层的层厚度大于第二肖特基接触层中载流子的平均自由程。

14. 发明授权

US08227739B2 Photodetector amplifier circuit for controlling an on state or an off state of an output transistor 失效
标题翻译：用于控制输出晶体管的导通状态或截止状态的光检测放大器电路
公开(公告)号：US08227739B2
公开(公告)日：2012-07-24
申请号：US12487281
申请日：2009-06-18
申请人： Masafumi Shimizu
发明人： Masafumi Shimizu
IPC分类号： H03F3/08 , H01J40/14 , G02B27/00
CPC分类号： H03F3/08
摘要： A photodetector amplifier circuit that converts a photodetector signal photoelectrically into a photocurrent and controls on or off state of an output transistor according to the photocurrent. The photodetector amplifier circuit has a first control circuit that is connected to a control terminal of the output transistor and controls on or off state of the output transistor according to the photocurrent and a switch that is connected between the control terminal of the output transistor and a ground voltage terminal and if the output transistor is turned off, discharges the control terminal of the output transistor by making the control terminal of the output transistor conductive with the ground voltage terminal.
摘要翻译：光电检测器放大器电路，其将光电检测器信号光电转换成光电流，并根据光电流控制输出晶体管的导通或截止状态。光电检测放大器电路具有连接到输出晶体管的控制端的第一控制电路，并根据光电流控制输出晶体管的导通或截止状态，以及连接在输出晶体管的控制端和接地电压端子，并且如果输出晶体管截止，则通过使输出晶体管的控制端子与接地电压端子导通来放电输出晶体管的控制端子。

15. 发明授权

US07891269B2 Straddle type vehicle 有权
标题翻译：跨骑式车辆
公开(公告)号：US07891269B2
公开(公告)日：2011-02-22
申请号：US12188946
申请日：2008-08-08
申请人： Masafumi Shimizu
发明人： Masafumi Shimizu
IPC分类号： B62K21/12
CPC分类号： B62J17/02 , B62K11/14 , B62K21/12 , B62K2202/00 , Y10T74/20822
摘要： A vehicle includes a handlebar and a handlebar cover. The handlebar cover includes a front cover for covering a front side of the handlebar and a rear cover for covering a rear side of the handlebar. The front and rear covers are fastened to each other by a fastener member. The fastener member is covered by a cover attached to the handlebar cover.
摘要翻译：车辆包括车把和车把罩。手柄盖包括用于覆盖车把前侧的前盖和用于覆盖把手后侧的后盖。前盖和后盖通过紧固件固定在一起。紧固件由附接到手把盖的盖子覆盖。

16. 发明申请

US20100056365A1 METHOD FOR PRODUCING COATING AGENT EXHIBITING PHOTOCATALYTIC ACTIVITY AND COATING AGENT OBTAINED THEREBY 审中-公开
标题翻译：生产涂料的方法展示光催化活性和获得的涂料代理
公开(公告)号：US20100056365A1
公开(公告)日：2010-03-04
申请号：US12514203
申请日：2007-11-08
申请人： Ryoue Kawai , Masafumi Shimizu , Ryuji Maekubo
发明人： Ryoue Kawai , Masafumi Shimizu , Ryuji Maekubo
IPC分类号： B01J21/08 , B01J23/00
CPC分类号： B01J21/063 , B01J35/002 , B01J35/004 , B01J37/0215 , B01J37/033 , B01J37/038 , C01G23/0536 , C01P2002/72
摘要： With respect to 100 parts by volume of an aqueous alcohol solution containing 0.01 to 50% by volume of an alcohol, 20 or less parts by volume of titanium tetrachloride is added thereto to obtain a coating agent wherein titanium oxide or a precursor thereof in the form of nanoparticles is dispersed in the aqueous alcohol solution. Consequently, the coating agent exhibiting a high photocatalytic activity can be produced by a simple operation at low cost. Since the coating agent obtained by the present invention has a high self-adhesiveness in addition to the high photocatalytic activity, it can adhere to an object substance by itself.
摘要翻译：相对于100体积份含有0.01〜50体积％的醇的醇水溶液，向其中加入20体积份以下的四氯化钛，得到其氧化钛或其前体的形式的涂布剂的纳米颗粒分散在醇水溶液中。因此，可以通过简单的操作以低成本制造表现出高光催化活性的涂布剂。由于本发明得到的涂布剂除了具有高的光催化活性之外还具有高的自粘性，因此可以将其自身粘附于目标物质。

17. 发明授权

US07614471B2 Motorcycle 失效
标题翻译：摩托车
公开(公告)号：US07614471B2
公开(公告)日：2009-11-10
申请号：US11686782
申请日：2007-03-15
申请人： Masafumi Shimizu , Tadashi Shimomura
发明人： Masafumi Shimizu , Tadashi Shimomura
IPC分类号： G01P3/50
CPC分类号： B62J17/02 , B60Y2200/12 , B62K2202/00
摘要： A motorcycle having a meter device and a handlebar cover arranged to inhibit damage or the adherence of powder coating to the meter device from the handlebar cover. In one embodiment, a rear cover comprises a peripheral wall, which surrounds an outer periphery of a meter device. At least a front portion of the peripheral wall, which surrounds a front side of the meter device, comprises a first portion and a second portion. The first portion is positioned inside the front cover. An outer surface of the second portion is exposed between a rear edge of the front cover and the meter. A dimension of the first portion and the second portion are the same in a longitudinal direction of the motorcycle, or the second portion is smaller than the first portion.
摘要翻译：一种具有仪表装置和把手盖的摩托车，其布置成防止来自车把盖的粉末涂层损坏或附着到仪表装置。在一个实施例中，后盖包括围绕仪表装置的外周的周壁。围绕仪表装置的前侧的周壁的至少前部包括第一部分和第二部分。第一部分位于前盖内。第二部分的外表面暴露在前盖的后边缘和仪表之间。第一部分和第二部分的尺寸在摩托车的纵向方向上相同，或者第二部分小于第一部分。

18. 发明授权

US06868755B2 Manufacturing method of diamond cutter 失效
标题翻译：金刚石切割机的制造方法
公开(公告)号：US06868755B2
公开(公告)日：2005-03-22
申请号：US10298031
申请日：2002-11-15
申请人： Hiroyasu Yabuki , Kiyoshi Bando , Masafumi Shimizu
发明人： Hiroyasu Yabuki , Kiyoshi Bando , Masafumi Shimizu
IPC分类号： B24D5/06 , B23D61/02 , B23D65/00 , B24D3/00 , B24D5/12 , B23D63/00
CPC分类号： B23D61/025 , B23D65/00
摘要： A diamond cutter 7 constituted by a cutter base plate 5 having a curved surface 3 by drawing molding a steel sheet metal material is provided. The cutter base plate 5 is obtained by preparing an original plate having an axial hole 2 and a circular outer shape from the steel sheet metal material, next spinning drawing or press molding, and forming the curved surface being 3 wholly point symmetrical about the axial hole 2 between the axial hole 2 and the outer shape 1.
摘要翻译：提供由具有弯曲表面3的切割器底板5构成的金刚石切割器7，其通过拉伸模制钢板金属材料。通过从钢板金属材料制备具有轴向孔2和圆形外形的原板，接下来的纺丝拉伸或压制成型，并且形成有关于轴向孔完全点对称的曲面3，从而获得切割器基板5 2在轴向孔2和外部形状1之间。

19. 发明授权

US5767540A Hetero-junction bipolar transistor having AlGaAsP emitter layer underneath a base electrode 失效
标题翻译：在基极下方具有AlGaAsP发射极层的异质结双极晶体管
公开(公告)号：US5767540A
公开(公告)日：1998-06-16
申请号：US605539
申请日：1996-02-22
申请人： Masafumi Shimizu
发明人： Masafumi Shimizu
IPC分类号： H01L29/205 , H01L21/331 , H01L29/08 , H01L29/73 , H01L29/737 , H01L29/20 , H01L29/06 , H01L31/0304 , H01L35/26
CPC分类号： H01L29/0817 , H01L29/7371
摘要： A hetero-junction bipolar transistor comprising a collector layer, a base layer and an emitter layer formed stepwise in this order wherein the emitter layer comprises a plurality of layers including an AlGaAs layer, and a passivation layer is formed at a stepwise portion between the base layer and the emitter layer, and of a material having a bandgap larger than that of the base layer, and provided with a phosphide layer on the surface thereof.
摘要翻译：一种异相结双极晶体管，包括集电极层，基极层和发射极层，按顺序形成，其中发射极层包括多个包括AlGaAs层的层，并且钝化层形成在基底层和发射极层以及具有比基底层的带隙大的带隙的材料，并且在其表面上设置有磷化物层。

20. 发明授权

US08216695B2 Method and facility for hot dip zinc plating 有权
标题翻译：热镀锌方法和设备
公开(公告)号：US08216695B2
公开(公告)日：2012-07-10
申请号：US11722410
申请日：2005-12-21
申请人： Ryota Nakanishi , Hiroshi Irie , Masaya Nakamura , Kohei Okamoto , Masafumi Shimizu
发明人： Ryota Nakanishi , Hiroshi Irie , Masaya Nakamura , Kohei Okamoto , Masafumi Shimizu
IPC分类号： B32B15/00 , C23C8/10
CPC分类号： C23C2/02 , Y10T428/12799
摘要： According to a process for hot-dip galvanization of the present invention, a steel sheet is treated by the oxidization/reduction method for better quality of galvanization and then hot-dip galvanized. An annealing line of equipment for hot-dip galvanization is composed of a non-oxidizing zone, an oxidizing zone, and a reducing zone, in his order. A steel sheet containing elements liable to oxidize more easily than iron is oxidized by blowing flames onto it in the oxidizing zone according to the oxidization/reduction method. Further, the steel sheet is reduced and annealed in the reducing zone.
摘要翻译：根据本发明的热镀锌方法，通过氧化还原法对钢板进行镀锌处理，然后进行热镀锌。用于热浸镀锌的设备退火线按顺序由非氧化区，氧化区和还原区组成。根据氧化还原法，含有容易比铁氧化的元素的钢板在氧化区域内通过在其上吹入火焰而被氧化。此外，钢板在还原区中还原并退火。

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