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    • 12. 发明申请
    • Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using same
    • 具有自旋相关传输特性的场效应晶体管和使用其的非易失性存储器
    • US20060138502A1
    • 2006-06-29
    • US10547844
    • 2004-01-23
    • Satoshi SugaharaMasaaki Tanaka
    • Satoshi SugaharaMasaaki Tanaka
    • H01L29/94
    • H01L29/47B82Y10/00G11C11/161H01L27/228H01L29/66984
    • When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the (ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a). Thus, a high-performance high-degree of integration nonvolatile memory composed of MISFETs operating on the above operating principle can be fabricated.
    • 当施加栅极电压V GS时,由铁磁源中的金属自旋带引起的肖特基势垒宽度减小,并且来自金属自旋带的向上自旋电子被隧道注入通道 地区。 然而,由于由铁磁源(3a)的半导电自旋带导致的能量势垒,来自非磁性接触(3b)的下旋电子不被注入。 也就是说,只有上自旋电子从铁磁源(3a)注入到沟道层中。 如果铁磁源(3a)和铁磁性漏极(5a)平行磁化,则上旋电子通过铁磁性漏极的金属自旋带传导成漏极电流。 相反,如果铁磁源(3a)和(铁磁性漏极(5a))反平行磁化,则由于半导体自旋带导致的能量势垒Ec,上升自旋电子不能通过铁磁性漏极(5a)传导 在铁磁性漏极(5a)中,可以制造以上述工作原理工作的由MISFET组成的高性能高集成度非易失性存储器。
    • 17. 发明授权
    • Ferromagnetic double quantum well tunnel magneto-resistance device
    • 铁磁双量子阱隧道磁阻器件
    • US06456523B1
    • 2002-09-24
    • US09762804
    • 2001-02-13
    • Masaaki TanakaToshiaki Hayashi
    • Masaaki TanakaToshiaki Hayashi
    • G11C1100
    • H01L43/08B82Y10/00B82Y25/00G01R33/06G01R33/093G01R33/098G11B5/3903G11B5/3909G11B2005/3996G11C11/16H01F10/3213H01F10/3254H01F10/3281H01L27/228
    • A ferromagnetic double quantum well tunneling magnetoresistance device is disclosed that utilizes a two-dimensional electron (positive hole) system to obtain an infinitely great magnetoresistance ratio. Also disclosed are a sensitive magnetic sensor and a nonvolatile storage device derived from that device. In structural terms of the device, a first and a second quantum well layer of ferromagnetic material (4, 8) in each of which the quantum confinement for carriers is established in a two-dimensional electron (positive hole) state are each sandwiched between a pair of barrier layers of nonmagnetic material (2, 6, 10) through which the carriers can tunnel. The first and second quantum well layers (4, 8) have a difference in coercive force so that when an external magnetic field is applied thereto only one of them may be reversed in the direction of magnetization. As a result, if magnetizations of the two quantum wells are parallel to each other, tunneling is allowed to occur, and if they are antiparallel to each other, tunneling is inhibited. A infinitely great tunneling magnetoresistance ratio is thereby obtained.
    • 公开了一种利用二维电子(空穴)系统获得无限大的磁阻比的铁磁双量子阱隧穿磁阻器件。 还公开了一种敏感磁传感器和从该装置衍生的非易失性存储装置。 在器件的结构方面,在二维电子(空穴)状态下建立载流子的量子限制的铁磁材料(4,8)的第一和第二量子阱层分别夹在 一对非磁性材料(2,6,10)的阻挡层,载体可穿过这些阻挡层。 第一和第二量子阱层(4,8)具有矫顽力的差异,使得当施加外部磁场时,只有其中一个可以在磁化方向上反转。 结果,如果两个量子阱的磁化彼此平行,则允许发生隧穿,并且如果它们彼此反平行,则隧道被抑制。 由此获得无限大的隧道磁阻比。
    • 19. 发明授权
    • Motor driving apparatus for controlling plurality of motors with less motor driving units than motors
    • 用于控制多个电动机的电动机驱动装置,其电动机驱动单元比电动机少
    • US06344719B2
    • 2002-02-05
    • US09782244
    • 2001-02-13
    • Ken ShibazakiMasaaki TanakaToshiyuki HoshiSatoshi TerashitaKen Mizuta
    • Ken ShibazakiMasaaki TanakaToshiyuki HoshiSatoshi TerashitaKen Mizuta
    • H02P158
    • H02P5/68
    • The motor driving apparatus comprises a plurality of motors for displacing the position of the control object member, semiconductor switch pairs, a plurality of motor driving units for connecting the motors to the power supply and a control unit for ON/OFF controlling the semiconductor switch pairs. The motors form two sets of motors with each set being formed of two motors. One end of the motors and forming each set is connected to the common motor driving unit having the semiconductor switch pair and the other end of the motors and forming each set is connected to the motor driving units having the semiconductor switch pairs in each set. When the motors of each set are driven simultaneously, the control unit turns ON and OFF two semiconductor switch pairs and drives the motors of each set on the time division basis to provide inverse output polarities of the two semiconductor switch pairs connected to the motors of each set. Thereby there is provided a low price motor driving apparatus that has reduced the total number of motor driving units using the motor driving units having the semiconductor switch pairs.
    • 马达驱动装置包括用于移动控制对象构件的位置的多个马达,半导体开关对,用于将马达连接到电源的多个马达驱动单元和用于开/关控制半导体开关对的控制单元 。 电动机形成两组电动机,每组电动机由两个电动机组成。 电动机的一端形成每个组合件连接到具有半导体开关对的公共电动机驱动单元,并且电动机的另一端和每组的形成连接到具有每组中的半导体开关对的电动机驱动单元。 当各组电动机同时驱动时,控制单元接通和断开两个半导体开关对,并按时间顺序驱动每组的电动机,以提供连接到每个电动机的电动机的两个半导体开关对的反相输出极性 组。 因此,提供了一种使用具有半导体开关对的电动机驱动单元减少了电动机驱动单元总数的低价电动机驱动装置。
    • 20. 发明授权
    • Hydraulic control device and brake device using same
    • 液压控制装置及制动装置使用相同
    • US6089359A
    • 2000-07-18
    • US190270
    • 1998-11-13
    • Masaaki Tanaka
    • Masaaki Tanaka
    • B60T8/42B60T7/04B60T13/74F16D65/14F16D65/18F16D66/00B60T13/00F03C1/00
    • B60T7/042B60T13/741F16D65/18F16D2066/003F16D2121/24F16D2125/10F16D2125/26F16D2125/48
    • A brake device includes a main piston slidably mounted within a caliper body of the brake device, a cylinder body provided inside an inner periphery of the piston, a sealed fluid chamber which is formed by the cylinder body and an inner peripheral surface of the main piston, and is filled with a fluid, a shaft rotatably mounted on the cylinder body, pressure control pistons which are driven by the shaft to move into and out of the fluid chamber, a linear movement conversion mechanism provided between the shaft and each of the pressure control pistons so as to convert a rotation of the shaft into a linear movement of the pressure control piston, a motor for rotating the shaft, a speed changer provided between the shaft and the motor so as to transmit the number of revolutions of the motor to the shaft in a manner to reduce the number of revolutions, and an electronic control unit (ECU) for controlling the motor.
    • 制动装置包括可滑动地安装在制动装置的卡钳体内的主活塞,设置在活塞的内周内的筒体,由缸体形成的密封流体室和主活塞的内周面 并且填充有流体,可旋转地安装在缸体上的轴,由轴驱动以移动和流出流体室的压力控制活塞;设置在轴和每个压力之间的线性运动转换机构 控制活塞,以将轴的旋转转换成压力控制活塞的线性运动,用于旋转轴的电动机,设置在轴和电动机之间的变速器,以将电动机的转数传递到 轴以减少转数的方式,以及用于控制电动机的电子控制单元(ECU)。