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    • 14. 发明授权
    • Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure
    • 将SiGe NPN和垂直PNP器件集成在衬底和相关结构上的方法
    • US06933202B1
    • 2005-08-23
    • US10821425
    • 2004-04-09
    • Paul D. HurwitzKenneth M. RingChun HuAmol Kalburge
    • Paul D. HurwitzKenneth M. RingChun HuAmol Kalburge
    • H01L21/8228
    • H01L21/82285H01L21/8228H01L27/0826
    • According to one exemplary embodiment, a method for forming an NPN and a vertical PNP device on a substrate comprises forming an insulating layer over an NPN region and a PNP region of the substrate. The method further comprises forming a buffer layer on the insulating layer and forming an opening in the buffer layer and the insulating layer in the NPN region, where the opening exposes the substrate. The method further comprises forming a semiconductor layer on the buffer layer and in the opening in the NPN region, where the semiconductor layer has a first portion situated in the opening and a second portion situated on the buffer layer in the PNP region. The first portion of the semiconductor layer forms a single crystal base of the NPN device and the second portion of the semiconductor layer forms a polycrystalline emitter of the vertical PNP device.
    • 根据一个示例性实施例,在衬底上形成NPN和垂直PNP器件的方法包括在衬底的NPN区域和PNP区域上形成绝缘层。 该方法还包括在绝缘层上形成缓冲层,并在NPN区域中的缓冲层和绝缘层中形成开口,其中开口露出基板。 所述方法还包括在所述NPN区域中的所述缓冲层和所述开口中形成半导体层,其中所述半导体层具有位于所述开口中的第一部分和位于所述PNP区域中的所述缓冲层上的第二部分。 半导体层的第一部分形成NPN器件的单晶基底,半导体层的第二部分形成垂直PNP器件的多晶发射极。