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11. 发明专利

CA2288460C DISTORTION COMPENSATION CIRCUIT 未知
公开(公告)号：CA2288460C
公开(公告)日：2001-10-23
申请号：CA2288460
申请日：1999-11-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA YUKIO , NAKAYAMA MASATOSHI , HORIGUCHI KENICHI
IPC分类号： H03F1/34 , H03F1/32 , H03F1/38 , H03G3/30 , H04B1/04 , H04B15/00
摘要： Conventional distortion compensation circuits have addressed the problem that their distortion compensation amount is greatly reduced at levels other than the designed power level. The present invention provides a distortion compensation circuit that comprises: a vector adjuster; a linearizer; a linear signal extraction path for extracting part of an input signal from the input side of the vector adjuster; a nonlinear signal extraction path for extracting part of an output signal from the output side of the amplifier; a level detector for detecting a combined power level of the signals from the linear signal extraction path and the nonlinear signal extraction path; and a control circuit for adjusting a bias of the linearizer in accordance with the detected combined power level, electrically adjusting the linearizer so that the power detected by the level detector is minimized, and adjusting the vector adjuster so that the power detected by the level detector is minimized every time the linearizer is adjusted. As a result, the distortion compensation circuit of the present invention can optimize distortion compensation at all times independently of the average power changes of the input signal, the secular changes of the amplifier and the state changes of the amplifier caused by temperature changes.

12. 发明专利

GB2255463B Semiconductor amplifier 未知
公开(公告)号：GB2255463B
公开(公告)日：1994-09-21
申请号：GB9206742
申请日：1992-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAGI TADASHI , IKEDA YUKIO , TOYOSHIMA GEN , SEINO KIYOHARU
IPC分类号： H03F3/60 , H03F3/193 , H03F3/195
摘要： A small-sized, high-efficiency semiconductor amplifier exhibits a satisfactory efficiency characteristic over a wide band and a low output level for secondary and tertiary higher harmonics. The semiconductor amplifier is equipped with an output circuit which is composed of a parallel resonance circuit for the secondary higher harmonic of the fundamental-operation frequency, a first connection line, a second connection line, and an open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic, the drain terminal of FETs leading to the output circuit being connected to one end of the parallel resonance circuit through the first connection line, an open point being formed at one end of the parallel resonance circuit, the other end of the parallel resonance circuit for the secondary higher harmonic being connected to the open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic through the second connection line, the length and width of the first connection line being adjusted to determine the secondary-higher-harmonic load-reflection coefficient of the FETs as seen from the drain thereof to such a value as will maximize the efficiency of the amplifier, the length and width of the second connection line being appropriately adjusted so as to adjust the impedance matching conditions with respect to the fundamental wave.

13. 发明专利

GB2240893A Linearization of amplitude response and phase correction for amplifier 未知
公开(公告)号：GB2240893A
公开(公告)日：1991-08-14
申请号：GB9028066
申请日：1990-12-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISOTA YOJI , TOYOSHIMA GEN , SUEMATSU NORIHARU , IKEDA YUKIO , TAKAGI TADASHI , URASAKI SHUJI
IPC分类号： H03F1/02 , H03F1/32 , H03F3/189 , H03F3/193
摘要： A high frequency amplifier circuit comprises an amplitude characteristic correction circuit and a phase characteristic correction circuit for compensating the non-linearity of the input-output characteristics of the amplifier. The amplitude characteristic correction circuit varies the drain voltage or the collector voltage of the amplifier in accordance with the envelope level of an input signal in such a manner that the relationship between the amplitude of the output of the amplifier and the amplitude of the input signal has linearity. On the other hand, the phase characteristic correction circuit provides a quantity of phase shift to the input signal in accordance with the envelope level of the input signal, and the phase-shifted input signal is applied to the amplifier in such a manner that the phase of the output of the amplifier and that of the input signal coincide with each other.

14. 发明专利

GB2239755A Compensation for non-linear effects on phase and amplitude in amplifier 未知
公开(公告)号：GB2239755A
公开(公告)日：1991-07-10
申请号：GB9028064
申请日：1990-12-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA YUKIO , TOYOSHIMA GEN , SUEMATSU NORIHARU , ISOTA YOJI , TAKAGI TADASHI , URASAKI SHUJI
IPC分类号： H03F1/02 , H03F1/32 , H03F3/189
摘要： A linear amplifier arrangement includes a variable attenuator 3 and a phase shifter 4 for modifying the amplitude and phase of an input signal to compensate for amplitude and phase distortion caused by non-linear characteristics of a high-powered amplifier 5 utilized in a microwave band communications system. An amplitude comparator 9 and a phase comparator 10 compare the amplitudes and phases of input and output signals of the linear amplifier circuit to develop control signals for controlling the operation of the variable attenuator 3 and phase shifter 4. The elimination of digital signal processing circuitry allows increased speed of operation.

15. 发明专利

GB2239364A DISTRIBUTED FET AMPLIFIER WITH TWO PARALLEL CHANNELS 未知
公开(公告)号：GB2239364A
公开(公告)日：1991-06-26
申请号：GB9027392
申请日：1990-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H03F1/30 , H01L27/06 , H01P1/00 , H03F3/60
摘要： A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

16. 发明专利

FR2604574B1 未知
公开(公告)号：FR2604574B1
公开(公告)日：1990-08-24
申请号：FR8711373
申请日：1987-08-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H01L27/06 , H03F3/60 , H03F3/16 , G05F3/08 , H03F3/54

17. 发明专利

GB2213989A DISTRIBUTED FET AMPLIFIER 未知
公开(公告)号：GB2213989A
公开(公告)日：1989-08-23
申请号：GB8901992
申请日：1989-01-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H03F1/30 , H01L27/06 , H01P1/00 , H03F3/60
摘要： A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

18. 发明专利

GB2211688A BIAS VOLTAGE SUPPLY CIRCUIT FOR DISTRIBUTED FET AMPLIFIER 未知
公开(公告)号：GB2211688A
公开(公告)日：1989-07-05
申请号：GB8901993
申请日：1989-01-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H03F1/30 , H01L27/06 , H01P1/00 , H03F3/60
摘要： A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

19. 发明专利

GB2202401A DISTRIBUTED FET AMPLIFIER AND BIAS VOLTAGE SUPPLY CIRCUIT THEREFOR 未知
公开(公告)号：GB2202401A
公开(公告)日：1988-09-21
申请号：GB8802792
申请日：1988-02-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H03F1/30 , H01L27/06 , H01P1/00 , H03F3/60 , H01L27/10
摘要： A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

20. 发明专利

FR2604574A1 未知
公开(公告)号：FR2604574A1
公开(公告)日：1988-04-01
申请号：FR8711373
申请日：1987-08-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： SEINO KIYOHARU , TAKAGI TADASHI , TAKEDA FUMIO , IKEDA YUKIO
IPC分类号： H01L27/06 , H03F3/60 , H03F3/16 , G05F3/08 , H03F3/54

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