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11. 发明专利

CA2422624A1 SEMICONDUCTOR BASE MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL 未知
公开(公告)号：CA2422624A1
公开(公告)日：2003-03-17
申请号：CA2422624
申请日：2001-09-17
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , OUCHI YOICHIRO , TSUNEKAWA TAKASHI , TADATOMO KAZUYUKI
IPC分类号： C30B25/02 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/22 , H01L33/32 , H01S5/323
摘要： A semiconductor base material, comprising a substrate (1) having an irregula r epitaxial growth surface shown in Fig. 1 (a), wherein, when the vapor phase epitaxial growth of GaN crystals is performed, the irregular surface suppresses a lateral growth and promotes a growth in C-axis direction so as to form a base surface allowing a facet surface to be formed thereon and, as shown in Fig. 1 (b), the crystals having the facet surface formed thereon gr ow on projected parts and also on recessed parts and, when the crystal growth i s further performed, the films grown from the projected and recessed parts are connected to each other to eventually cover the irregular surface as shown i n Fig. 1 (c) for flattening and, in this case, and area with low dislocation density is formed at the top parts of the projected parts having the facet surface formed thereon to increase the quality of the film.

12. 发明专利

DE69431333D1 未知
公开(公告)号：DE69431333D1
公开(公告)日：2002-10-17
申请号：DE69431333
申请日：1994-10-06
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , WATABE SHINICHI , OKAGAWA HIROAKI , HIRAMATSU KAZUMASA
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32 , C30B29/38 , H01L21/00
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 mu m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

13. 发明专利

GB2270199B Semiconductor light emitting element 未知
公开(公告)号：GB2270199B
公开(公告)日：1995-05-10
申请号：GB9317480
申请日：1993-08-23
申请人： MITSUBISHI CABLE IND LTD
发明人： WATABE SHINICHI , TADATOMO KAZUYUKI , OKAGAWA HIROAKI
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40

14. 发明专利

DE60133303D1 未知
公开(公告)号：DE60133303D1
公开(公告)日：2008-04-30
申请号：DE60133303
申请日：2001-09-17
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , TADATOMO KAZUYUKI , OUCHI YOICHIRO , TSUNEKAWA TAKASHI
IPC分类号： H01L21/205 , C30B25/02 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/20 , H01L33/22 , H01L33/32 , H01S5/323
摘要： A semiconductor base comprising a sapphire substrate and an Al x Ga4 1-x-y In y N (0 x 1, 0 y 1, 0 x+y 1) crystal layer grown on the substrate, characterized in that the sapphire substrate has a crystal growth plane, the crystal growth plane having a concavo-convex surface, and during growth of the crystal layer, facet structure growth occurs from the concave part of the concavo-convex surface, due to which, the crystal layer contains above the concave part a dislocation line that is bent at a position higher than the top part of the convex part.

15. 发明专利

DE69431333T2 未知
公开(公告)号：DE69431333T2
公开(公告)日：2003-07-31
申请号：DE69431333
申请日：1994-10-06
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , WATABE SHINICHI , OKAGAWA HIROAKI , HIRAMATSU KAZUMASA
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32 , C30B29/38 , H01L21/00
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 mu m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

16. 发明专利

DE69602141D1 未知
公开(公告)号：DE69602141D1
公开(公告)日：1999-05-27
申请号：DE69602141
申请日：1996-08-24
申请人： MITSUBISHI CABLE IND LTD
发明人： OHUCHI YOUICHIRO , OKAGAWA HIROAKI , WATABE SHINICHI , TADATOMO KAZUYUKI
IPC分类号： H01L33/32 , H01L33/00

17. 发明专利

DE60030279T2 未知
公开(公告)号：DE60030279T2
公开(公告)日：2007-08-30
申请号：DE60030279
申请日：2000-03-15
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OUCHI YOICHIRO , KOTO MASAHIRO
IPC分类号： H01L21/205 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20
摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

18. 发明专利

DE60033800D1 未知
公开(公告)号：DE60033800D1
公开(公告)日：2007-04-19
申请号：DE60033800
申请日：2000-03-21
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , KOTO MASAHIRO , TADATOMO KAZUYUKI
IPC分类号： H01L21/205 , C30B25/02 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/20 , H01L33/00 , H01L33/32 , H01S5/323
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

19. 发明专利

DE60030279D1 未知
公开(公告)号：DE60030279D1
公开(公告)日：2006-10-05
申请号：DE60030279
申请日：2000-03-15
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OUCHI YOICHIRO , KOTO MASAHIRO
IPC分类号： H01L21/205 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20
摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

20. 发明专利

DE69616108T2 未知
公开(公告)号：DE69616108T2
公开(公告)日：2002-06-27
申请号：DE69616108
申请日：1996-02-14
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , HASHIMOTO TAKAYUKI , MIYASHITA KEIJI , YAMADA TOMOO , TADATOMO KAZUYUKI
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necesssary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.

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