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    • 13. 发明申请
    • METHOD AND APPARATUS FOR ESTABLISHING AND MAINTAINING DESIRED READ LATENCY IN HIGH-SPEED DRAM
    • 用于建立和维护高速DRAM中所需读取延迟的方法和装置
    • WO2004084225A1
    • 2004-09-30
    • PCT/US2004/007980
    • 2004-03-16
    • MICRON TECHNOLOGY, INC.
    • JOHNSON, BrianKEETH, BrentLIN, Feng
    • G11C7/10
    • G11C7/222G11C7/1072G11C11/4076
    • A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve and specified read latency. A rester signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.
    • 一种用于管理从外部时钟信号导出的内部时钟信号的可变定时的方法和装置,以便补偿相对于数据流的读取时钟反馈定时的量的不确定性和变化,以实现和指定的读延迟。 在DRAM初始化时产生恢复信号,并启动计数外部时钟周期的第一计数器,并且还通过延迟锁定循环的从延迟线来启动第二个计数器。 一旦启动,计数器连续运行,计数值的差值代表作为外部时钟信号的内部延迟。 内部读延迟值用于抵消DRAM电路的内部读延迟。 一旦非偏移计数器等效于偏移计数器,读取数据将放置在具有指定读延迟并与外部读时钟同步的输出线上。