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11. 发明申请

US20050019026A1 Delivery systems for efficient vaporization of precursor source material 有权
标题翻译：用于高效蒸发前体源材料的输送系统
公开(公告)号：US20050019026A1
公开(公告)日：2005-01-27
申请号：US10625179
申请日：2003-07-23
申请人： Luping Wang , Thomas Baum , Chongying Xu
发明人： Luping Wang , Thomas Baum , Chongying Xu
IPC分类号： B01D1/00 , B01D7/00 , C23C14/00 , C23C16/00 , C23C16/448
CPC分类号： C23C16/4481 , B01D1/0082
摘要： The present invention relates to a delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and/or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.
摘要翻译：本发明涉及一种用于以对于半导体制造应用具有特殊用途的受控速率蒸发和输送蒸发的固体和液体前体材料的输送系统。该系统包括蒸发容器，处理工具和它们之间的连接蒸汽管线，其中系统还包括输入流量控制器和/或输出流量控制器，以向蒸发容器提供可蒸发的源材料的受控输送，蒸发的原料流向加工工具的流量。

12. 发明授权

US06716271B1 Apparatus and method for inhibiting decomposition of germane 有权
标题翻译：用于抑制锗烷分解的装置和方法
公开(公告)号：US06716271B1
公开(公告)日：2004-04-06
申请号：US10282377
申请日：2002-10-29
申请人： Jose Arno , Edward Sturm , Luping Wang , James Dietz
发明人： Jose Arno , Edward Sturm , Luping Wang , James Dietz
IPC分类号： B01D5304
CPC分类号： B01D53/04 , B01D2253/102 , B01D2259/40083 , B01D2259/40086 , B01D2259/40088 , B01D2259/4525 , Y10S95/901
摘要： A germane storage and dispensing system, in which germane gas is sorptively retained on an activated carbon sorbent medium in a vessel containing adsorbed and free germane gas. The activated carbon sorbent medium is deflagration-resistant in relation to the germane gas adsorbed thereon, i.e., under deflagration conditions of 65° C. and 650 torr, under which free germane gas undergoes deflagration, the activated carbon sorbent medium does not sustain deflagration of the adsorbed germane gas or thermally desorb the germane gas so that it undergoes subsequent deflagration. The deflagration-resistance of the activated carbon sorbent medium is promoted by pre-treatment of the sorbent material to remove extraneous sorbables therefrom and by maintaining the fill level of the sorbent medium in the gas storage and dispensing vessel at a substantial value, e.g., of at least 30%.
摘要翻译：锗烷存储和分配系统，其中将锗烷气体吸附保留在含有吸附和游离的锗烷气体的容器中的活性炭吸附剂介质上。活性炭吸附剂介质相对于其上吸附的锗烷气体，即在65℃和650托的爆燃条件下，具有爆燃阻力，在此条件下，游离的锗烷气体经历爆燃，活性炭吸附剂介质不能保持爆燃吸附的锗烷气体或热解吸锗烷气体，使其经历随后的爆燃。通过预处理吸附剂材料来促进活性炭吸附剂介质的防爆性，以从其中除去外来的吸附物，并且通过将吸附剂介质在气体储存和分配容器中的填充水平保持在基本值，例如至少30％。

13. 发明授权

US06343476B1 Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein 有权
标题翻译：气体储存和分配系统，其包括调节器，其内部设置在流体容纳容器中并可原位调节
公开(公告)号：US06343476B1
公开(公告)日：2002-02-05
申请号：US09552347
申请日：2000-04-19
申请人： Luping Wang , Glenn M. Tom
发明人： Luping Wang , Glenn M. Tom
IPC分类号： F17C1100
CPC分类号： F17C13/04 , F17C1/00 , F17C7/00 , F17C11/00 , F17C13/02 , F17C13/025 , F17C2201/0109 , F17C2201/0114 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2203/0617 , F17C2203/0643 , F17C2203/0648 , F17C2205/0305 , F17C2205/0326 , F17C2205/0329 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/035 , F17C2205/0382 , F17C2205/0385 , F17C2205/0391 , F17C2209/221 , F17C2221/03 , F17C2223/0123 , F17C2223/035 , F17C2227/044 , F17C2270/025 , F17C2270/0518 , Y02E60/321
摘要： A gas storage and dispensing system comprising a vessel for holding a gas at a desired pressure. The vessel has a gas pressure regulator in its interior volume, to maintain pressure of dispensed gas at a desired pressure determined by the set point of the regulator. A second gas pressure regulator may be joined in series gas flow communication with the first gas pressure regulator, with the second gas pressure regulator being in initial contact with gas that is dispensed prior to its flow through the first gas pressure regulator, and with the set point pressure of the second gas pressure regulator being at least twice the set point pressure of the first gas pressure regulator.
摘要翻译：一种气体储存和分配系统，包括用于将气体保持在所需压力下的容器。容器在其内部容积中具有气体压力调节器，以将分配气体的压力保持在由调节器的设定点确定的期望压力。第二气体压力调节器可以与第一气体压力调节器串联气流连通，第二气体压力调节器与其在流过第一气体压力调节器之前被分配的气体初始接触，并且与该组第二气体压力调节器的点压力至少是第一气体压力调节器的设定点压力的两倍。

14. 发明授权

US6083298A Process for fabricating a sorbent-based gas storage and dispensing system, utilizing sorbent material pretreatment 有权
标题翻译：使用吸附剂材料预处理制造基于吸附剂的气体储存和分配系统的方法
公开(公告)号：US6083298A
公开(公告)日：2000-07-04
申请号：US143809
申请日：1998-08-31
申请人： Luping Wang , James V. McManus
发明人： Luping Wang , James V. McManus
IPC分类号： B01D53/04 , B01J4/02 , B01J20/08 , B01J20/10 , B01J20/14 , B01J20/16 , B01J20/18 , B01J20/20 , B01J20/26 , B01J20/34 , F17C11/00
CPC分类号： B01D53/0407 , B01J20/18 , B01J20/20 , B01J20/28004 , B01J20/28019 , F17C11/00 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/202 , B01D2253/308 , B01D2257/502 , B01D2257/504 , B01D2259/4525 , B01J2220/66 , F17C2205/0338 , F17C2205/0391 , Y02C10/08 , Y02E60/321
摘要： A process for fabricating a gas storage and dispensing system including a dispenser container for holding a physical sorbent material having sorptive affinity for (i) a sorbable dispensing gas to be held in and subsequently selectively discharged from the dispenser container, and (ii) extraneous sorbables, in which the physical sorbent material, having extraneous sorbables sorbed thereon, is treated to desorb from the sorbent material at least part of the extraneous sorbables, prior to loading the sorbent material into a gas storage and dispensing container.
摘要翻译：一种用于制造气体储存和分配系统的方法，包括用于保持具有吸附亲合力的物理吸附剂材料的分配器容器，用于（i）可吸附的分配气体被保持在分配器容器中并随后从分配器容器中选择性地排出，以及（ii）无关的可吸取物其中在将吸附剂材料装入气体储存和分配容器之前，其中具有吸附在其上的外来吸附物质的物理吸附剂材料被处理以从吸附材料解吸至少部分外来吸附物。

15. 发明授权

US08539781B2 Component for solar adsorption refrigeration system and method of making such component 有权
标题翻译：太阳能吸附制冷系统的组成部分及其制造方法
公开(公告)号：US08539781B2
公开(公告)日：2013-09-24
申请号：US12666208
申请日：2008-06-22
申请人： J. Donald Carruthers , Karl Boggs , Luping Wang , Shaun Wilson , Jose I. Arno , Paul J. Marganski , Steven M. Bilodeau , Peng Zou , Brian Bobita , Joseph D. Sweeney , Douglas Edwards
发明人： J. Donald Carruthers , Karl Boggs , Luping Wang , Shaun Wilson , Jose I. Arno , Paul J. Marganski , Steven M. Bilodeau , Peng Zou , Brian Bobita , Joseph D. Sweeney , Douglas Edwards
IPC分类号： F25B15/00
CPC分类号： B01J20/26 , B01J20/20 , B01J20/28054 , B01J20/28092 , B01J20/30 , B01J20/305 , B01J20/3078 , B01J2220/445 , C09K5/047 , F25B17/08 , F25B27/007 , F25B35/04 , F25B37/00 , F25B2500/01
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。这种吸附结构在吸附剂型制冷系统中有用。描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触，形成一个结构。该结构被热解以形成多孔吸附剂材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第第二个地区。

16. 发明授权

US07485169B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
标题翻译：利用排气再循环的半导体制造设备
公开(公告)号：US07485169B2
公开(公告)日：2009-02-03
申请号：US11519681
申请日：2006-09-12
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： F24F3/16 , H01L21/00
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
摘要翻译：一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域房间。该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境在设施中，例如，到设施的灰色房间。

17. 发明授权

US07328716B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US07328716B2
公开(公告)日：2008-02-12
申请号：US11062509
申请日：2005-02-22
申请人： W. Karl Olander , Matthew B Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F16K3/36 , B08B9/027 , G05B11/01
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

18. 发明申请

US20050039425A1 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
标题翻译：利用排气再循环的半导体制造设备
公开(公告)号：US20050039425A1
公开(公告)日：2005-02-24
申请号：US10672051
申请日：2003-09-26
申请人： W. Olander , Joseph Sweeney , Luping Wang
发明人： W. Olander , Joseph Sweeney , Luping Wang
IPC分类号： B01D53/74 , C23C14/48 , C23C14/56 , B01D50/00
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
摘要翻译：一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域房间。该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境在设施中，例如，到设施的灰色房间。

19. 发明授权

US06740586B1 Vapor delivery system for solid precursors and method of using same 失效
标题翻译：固体前体的蒸气输送系统及其使用方法
公开(公告)号：US06740586B1
公开(公告)日：2004-05-25
申请号：US10288743
申请日：2002-11-06
申请人： Luping Wang , Thomas H. Baum , Chongying Xu
发明人： Luping Wang , Thomas H. Baum , Chongying Xu
IPC分类号： H01L2131
CPC分类号： B01D3/346 , C23C16/4481 , H01L21/28556
摘要： A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.
摘要翻译：蒸发器输送系统，其包括施加到线基底上的可升华的固体前体材料，用于汽化并实现将蒸发的前体连续不间断地输送到下游半导体处理室。涂覆的线基材以预定速度被拉过热源，以快速加热和蒸发可升华的固体前体。

20. 发明授权

US06620256B1 Non-plasma in-situ cleaning of processing chambers using static flow methods 有权
标题翻译：使用静态流动方法对处理室进行非等离子体原位清洗
公开(公告)号：US06620256B1
公开(公告)日：2003-09-16
申请号：US09708243
申请日：2000-11-08
申请人： Jose Arno , Luping Wang , Glenn M. Tom
发明人： Jose Arno , Luping Wang , Glenn M. Tom
IPC分类号： C23G5028
CPC分类号： F17C1/00 , C23C16/4405 , F17C7/00 , F17C11/00 , F17C13/02 , F17C13/025 , F17C13/04 , F17C2201/0119 , F17C2201/056 , F17C2201/058 , F17C2203/0617 , F17C2205/0323 , F17C2205/0329 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2221/01 , F17C2223/0153 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2260/044 , F17C2265/017 , F17C2270/05
摘要： An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.
摘要翻译：一种用于从热处理室或等离子体CVD处理工艺中使用的处理室的内表面去除积聚的膜和固体残余物的改进的非等离子体静态方法。该方法包括将反应物质引入处理室，同时将处理室内的压力调节至预定水平。终止反应物质流入处理室，反应物质保留在处理室中，与固体残留物反应形成反应产物，随后将反应产物从处理室中除去。有利地，终止反应物质流入处理室中导致蚀刻作用，其更有效地利用清洁剂并产生较少危险的材料。

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