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11. 发明授权

US08207576B2 Pitch reduced patterns relative to photolithography features 有权
公开(公告)号：US08207576B2
公开(公告)日：2012-06-26
申请号：US11669840
申请日：2007-01-31
申请人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
发明人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
IPC分类号： H01L29/66 , H01L21/00 , G03F7/00
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

12. 发明授权

US07718540B2 Pitch reduced patterns relative to photolithography features 有权
标题翻译：相对于光刻特征的间距减小
公开(公告)号：US07718540B2
公开(公告)日：2010-05-18
申请号：US11670296
申请日：2007-02-01
申请人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
发明人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。然后在无定形碳的侧壁上形成侧壁间隔物。去除无定形碳，留下限定第一掩模图案的侧壁间隔物。然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

13. 发明申请

US20100092891A1 PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES 有权
标题翻译：相对于光刻特征的PITCH减少图案
公开(公告)号：US20100092891A1
公开(公告)日：2010-04-15
申请号：US12636581
申请日：2009-12-11
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： G03F7/20
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。然后在无定形碳的侧壁上形成侧壁间隔物。去除无定形碳，留下限定第一掩模图案的侧壁间隔物。然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

14. 发明申请

US20070238295A1 Methods of forming semiconductor constructions 有权
标题翻译：形成半导体结构的方法
公开(公告)号：US20070238295A1
公开(公告)日：2007-10-11
申请号：US11402659
申请日：2006-04-11
申请人： Ramakanth Alapati , Ardavan Niroomand , Gurtej Sandhu , Luan Tran
发明人： Ramakanth Alapati , Ardavan Niroomand , Gurtej Sandhu , Luan Tran
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/76232 , H01L27/105 , H01L27/1052
摘要： The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to form a first opening having a first width. The first opening is narrowed with a conformal layer of carbon-containing material. The conformal layer is punched through to expose substrate along a bottom of the narrowed opening. The exposed substrate is removed to form a second opening which joins to the first opening, and which has a second width less than the first width. The carbon-containing material is then removed from within the first opening, and electrically insulative material is formed within the first and second openings. The electrically insulative material can substantially fill the first opening, and leave a void within the second opening.
摘要翻译：本发明包括形成用于半导体结构的隔离区域的方法。可以在半导体衬底上形成并图案化硬掩模，其中图案化的硬掩模暴露衬底的区域。可以蚀刻这样的暴露区域以形成具有第一宽度的第一开口。第一个开口用含碳材料的共形层变窄。穿过保形层以沿着狭窄的开口的底部露出衬底。去除暴露的衬底以形成连接到第一开口的第二开口，并且具有小于第一宽度的第二宽度。然后从第一开口内去除含碳材料，并且在第一和第二开口内形成电绝缘材料。电绝缘材料可以基本上填充第一开口，并在第二开口内留下空隙。

15. 发明授权

US07737031B2 Insitu formation of inverse floating gate poly structures 有权
标题翻译：反浮栅聚结构的内部形成
公开(公告)号：US07737031B2
公开(公告)日：2010-06-15
申请号：US11832972
申请日：2007-08-02
申请人： Ramakanth Alapati , Gurtej Sandhu
发明人： Ramakanth Alapati , Gurtej Sandhu
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521
摘要： Briefly, in accordance with one or more embodiments, a method of making an inverse-t shaped floating gate in a non-volatile memory cell or the like is disclosed.
摘要翻译：简而言之，根据一个或多个实施例，公开了在非易失性存储单元等中制作逆T形浮动栅极的方法。

16. 发明申请

US20090035905A1 INSITU FORMATION OF INVERSE FLOATING GATE POLY STRUCTURES 有权
标题翻译：逆向浮选门结构的形成
公开(公告)号：US20090035905A1
公开(公告)日：2009-02-05
申请号：US11832972
申请日：2007-08-02
申请人： Ramakanth Alapati , Gurtej Sandhu
发明人： Ramakanth Alapati , Gurtej Sandhu
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521
摘要： Briefly, in accordance with one or more embodiments, a method of making an inverse-t shaped floating gate in a non-volatile memory cell or the like is disclosed.
摘要翻译：简而言之，根据一个或多个实施例，公开了在非易失性存储单元等中制造逆T形浮置栅极的方法。

17. 发明授权

US08809198B2 Nano-crystal etch process 有权
标题翻译：纳米晶体蚀刻工艺
公开(公告)号：US08809198B2
公开(公告)日：2014-08-19
申请号：US12650029
申请日：2009-12-30
申请人： Ramakanth Alapati , Paul Morgan , Max Hineman
发明人： Ramakanth Alapati , Paul Morgan , Max Hineman
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , B82Y10/00 , H01L21/28273
摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
摘要翻译：一种用于在绝缘层上选择性去除纳米晶体的方法。该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。

18. 发明申请

US20100105211A1 NANO-CRYSTAL ETCH PROCESS 有权
标题翻译：纳米晶体蚀刻工艺
公开(公告)号：US20100105211A1
公开(公告)日：2010-04-29
申请号：US12650029
申请日：2009-12-30
申请人： Ramakanth Alapati , Paul Morgan , Max Hineman
发明人： Ramakanth Alapati , Paul Morgan , Max Hineman
IPC分类号： H01L21/3065
CPC分类号： H01L21/32134 , B82Y10/00 , H01L21/28273
摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
摘要翻译：一种用于在绝缘层上选择性去除纳米晶体的方法。该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。

19. 发明申请

US20080286975A1 PLATINUM NANODET ETCH PROCESS 有权
标题翻译：铂纳米粒子过程
公开(公告)号：US20080286975A1
公开(公告)日：2008-11-20
申请号：US11748196
申请日：2007-05-14
申请人： Ramakanth Alapati , Paul Morgan , Max Hineman
发明人： Ramakanth Alapati , Paul Morgan , Max Hineman
IPC分类号： H01L21/306
CPC分类号： H01L21/32134 , B82Y10/00 , H01L21/28273
摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
摘要翻译：一种用于在绝缘层上选择性去除纳米晶体的方法。该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。

20. 发明授权

US07659210B2 Nano-crystal etch process 有权
标题翻译：纳米晶体蚀刻工艺
公开(公告)号：US07659210B2
公开(公告)日：2010-02-09
申请号：US11748196
申请日：2007-05-14
申请人： Ramakanth Alapati , Paul Morgan , Max Hineman
发明人： Ramakanth Alapati , Paul Morgan , Max Hineman
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , B82Y10/00 , H01L21/28273
摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
摘要翻译：一种用于在绝缘层上选择性去除纳米晶体的方法。该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。

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