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11. 发明授权

US06867473B2 Plating a conductive material on a dielectric material 失效
标题翻译：将导电材料电镀在电介质材料上
公开(公告)号：US06867473B2
公开(公告)日：2005-03-15
申请号：US10722800
申请日：2003-11-26
申请人： Michael D. Goodner , Grant Kloster , Steven W. Johnston
发明人： Michael D. Goodner , Grant Kloster , Steven W. Johnston
IPC分类号： H01L21/288 , H01L21/312 , H01L21/3205 , H01L21/768 , H01L29/00
CPC分类号： H01L21/312 , C23C18/1607 , C23C18/1639 , C23C18/1641 , C23C18/1653 , C23C18/1868 , C23C18/1893 , H01L21/02282 , H01L21/02348 , H01L21/288 , H01L21/3205 , H01L21/76843 , H01L21/76874 , H01L23/53238
摘要： A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions and metal regions exposed, for example, may have the organic polymers formed selectively on the organic regions and not on the unpolymerizable or metal regions.
摘要翻译：使用诱导的表面接枝或聚合反应可以用聚合物选择性地涂布表面。反应在可聚合的区域中进行，而不在其它区域。因此，具有例如露出的有机区域和金属区域的半导体结构可以具有在有机区域而不是在不可聚合或金属区域上有选择地形成的有机聚合物。

12. 发明授权

US5419462A Apparatus for recharging a heated receptacle with particulate matter at a controlled velocity 失效
标题翻译：用于以受控的速度对具有颗粒物质的加热容器进行再充电的装置
公开(公告)号：US5419462A
公开(公告)日：1995-05-30
申请号：US179410
申请日：1994-01-10
申请人： Steven W. Johnston , Andrew O. Wikman
发明人： Steven W. Johnston , Andrew O. Wikman
IPC分类号： B01J4/00 , C01B33/02 , C30B11/00 , C30B15/00 , C30B15/02 , C30B29/06 , B67D5/06
CPC分类号： C30B11/00 , C30B15/02
摘要： Particle scattering and/or trapping in the feed of particulate matter into a receptacle can be avoided by the use of a particulate matter-dispensing apparatus comprising telescopically-aligned internal and external robes associated with an actuator for telescopic movement of the tubes; the tubes having inner surfaces which are free of any protrusion or recession capable of preventing telescopic movement of the tubes or permitting the resting of particulate matter within the tubes, and the external tube having a distal orifice which is sufficiently smaller than its bore to decrease the flow rate of particulate matter through the tube. The novel apparatus is particularly useful for the discontinuous feeding of particulate polysilicon into a melting crucible.
摘要翻译：可以通过使用颗粒物质分配装置来避免将颗粒物质进料到容器中的颗粒散射和/或捕获，所述颗粒物质分配装置包括与用于管的伸缩运动的致动器相关联的可伸缩对准的内部和外部长袍; 该管具有不具有能够防止管的伸缩运动或允许颗粒物质在管内的静止的任何突起或凹陷的内表面，并且外管具有足够小于其孔的远端孔，以减少颗粒物通过管的流速。该新颖的装置对颗粒状多晶硅不连续地供入熔融坩埚中是特别有用的。

13. 发明授权

US07605469B2 Atomic layer deposited tantalum containing adhesion layer 失效
公开(公告)号：US07605469B2
公开(公告)日：2009-10-20
申请号：US10883357
申请日：2004-06-30
申请人： Steven W. Johnston , Kerry Spurgin , Brennan L. Peterson
发明人： Steven W. Johnston , Kerry Spurgin , Brennan L. Peterson
IPC分类号： H01L23/532 , H01L23/522
CPC分类号： H01L21/76843 , H01L21/28562
摘要： Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

14. 发明授权

US07601637B2 Atomic layer deposited tantalum containing adhesion layer 失效
公开(公告)号：US07601637B2
公开(公告)日：2009-10-13
申请号：US12317537
申请日：2008-12-24
申请人： Steven W. Johnston , Kerry Spurgin , Brennan L. Peterson
发明人： Steven W. Johnston , Kerry Spurgin , Brennan L. Peterson
IPC分类号： H01L21/285 , H01L21/443 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/28562
摘要： Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

15. 发明授权

US06275060B1 Apparatus and method for measuring minority carrier lifetimes in semiconductor materials 失效
标题翻译：用于测量半导体材料中少数载流子寿命的装置和方法
公开(公告)号：US06275060B1
公开(公告)日：2001-08-14
申请号：US09283738
申请日：1999-04-01
申请人： Richard K. Ahrenkiel , Steven W. Johnston
发明人： Richard K. Ahrenkiel , Steven W. Johnston
IPC分类号： G01R3126
CPC分类号： H01L22/14 , G01R31/2656 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearity for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.
摘要翻译：用于确定半导体样品的少数载流子寿命的装置包括用于相对于线圈移动样品的定位器。线圈连接到桥式电路，使得当样品相对于线圈定位时，桥接电路的一个臂的阻抗变化。样品相对于线圈定位，使得通过样品照明产生的样品的光电导的任何变化产生桥接电路的输入阻抗的线性相关变化。此外，该装置被校准为以固定频率工作，使得该装置对于不同尺寸，形状和材料性质的样品保持一致的高灵敏度和高线性度。当光源照亮样品时，桥接电路的阻抗随着在样品中产生过量载体而改变，从而产生指示样品的少数载流子寿命或复合速率的可测量信号。

16. 发明授权

US4782171A Stabilization of amine alanes 失效
标题翻译：胺烷烃的稳定化
公开(公告)号：US4782171A
公开(公告)日：1988-11-01
申请号：US133141
申请日：1987-12-14
申请人： Everett M. Marlett , Frederick W. Frey , Steven W. Johnston , Herbert D. Kaesz
发明人： Everett M. Marlett , Frederick W. Frey , Steven W. Johnston , Herbert D. Kaesz
IPC分类号： B01J21/06 , C01B6/06 , C01B6/24 , C07F5/06
CPC分类号： C01B6/243 , C01B6/06 , C07F5/069
摘要： Process for retarding the decomposition of an amine alane, said process comprising contacting an amine alane which is substantially titanium-free, with an effective amount of a decomposition retarding agent selected from the class consisting of O.sub.2, CO, nitrogen oxides and alkyl nitrites.

17. 发明授权

US4730070A Stabilization of amine alanes 失效
标题翻译：胺烷烃的稳定化
公开(公告)号：US4730070A
公开(公告)日：1988-03-08
申请号：US51720
申请日：1987-05-20
申请人： Everett M. Marlett , Frederick W. Frey , Steven W. Johnston , Herbert D. Kaesz
发明人： Everett M. Marlett , Frederick W. Frey , Steven W. Johnston , Herbert D. Kaesz
IPC分类号： C01B6/24 , C07F5/06
CPC分类号： C07F5/069 , C01B6/243
摘要： Amine alane decomposition is catalyzed by titanium. This effect of titanium can be suppressed by treating it with a passivating agent such as air, nitrous oxide, carbon monoxide and alkyl nitrites. Such agents may be used (1) to treat titanium-containing NaAlH.sub.4 preparations to be used in preparing amine alanes, or (2) to treat amine alanes containing titanium as an impurity, e.g. in finely divided form. Furthermore, the reaction of NaAlH.sub.4, amine, and a halide substance to produce an amine alane can be conducted in the presence of a passivating agent.
摘要翻译：胺分解是由钛催化的。通过用钝化剂如空气，一氧化二氮，一氧化碳和亚硝酸烷基酯处理钛可以抑制这种钛的影响。可以使用这种试剂（1）来处理用于制备胺烷烃的含钛NaAlH 4制剂，或（2）处理含有钛作为杂质的胺烷烃。细分形式。此外，NaAlH 4，胺和卤化物物质产生胺丙烷的反应可以在钝化剂的存在下进行。

18. 发明授权

US08227335B2 Forming a copper diffusion barrier 有权
标题翻译：形成铜扩散屏障
公开(公告)号：US08227335B2
公开(公告)日：2012-07-24
申请号：US11897862
申请日：2007-08-31
申请人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
发明人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
摘要翻译：贵金属可用作非氧化扩散阻挡层，以防止铜线扩散。扩散阻挡层可以由在可氧化扩散阻挡层上形成在粘附促进层上或由贵金属盖形成的贵金属形成。铜线也可以用贵金属覆盖。

19. 发明授权

US07435679B2 Alloyed underlayer for microelectronic interconnects 有权
标题翻译：用于微电子互连的合金底层
公开(公告)号：US07435679B2
公开(公告)日：2008-10-14
申请号：US11006844
申请日：2004-12-07
申请人： Steven W. Johnston , Juan E. Dominguez
发明人： Steven W. Johnston , Juan E. Dominguez
IPC分类号： H01L21/44
CPC分类号： H01L21/76808 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76858 , H01L23/5226 , H01L23/53238 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during thermal post-treatment, such as thermal annealing, conducted after two separately depositing the noble metal and the barrier material, which are substantially soluble in one another. The use of a barrier material within the underlayer prevents the electromigration of the interconnect conductive material and the use of noble material within the underlayer allows for the direct plating of the interconnect conductive material.
摘要翻译：制造具有作为阻挡层和种子层两者的底层的微电子互连的装置和方法。底层是通过共沉积贵金属和诸如难熔金属的阻挡材料形成的，或者在热后处理之后形成，例如热退火，在两个分开沉积贵金属和阻挡材料之后进行彼此基本溶解。在底层内使用阻挡材料防止互连导电材料的电迁移，并且在底层内使用贵金属允许互连导电材料的直接电镀。

20. 发明授权

US07335587B2 Post polish anneal of atomic layer deposition barrier layers 有权
标题翻译：原子层沉积阻挡层的后抛光退火
公开(公告)号：US07335587B2
公开(公告)日：2008-02-26
申请号：US11173858
申请日：2005-06-30
申请人： Steven W. Johnston , Kevin P. O'Brien , Sridhar Balakrishnan
发明人： Steven W. Johnston , Kevin P. O'Brien , Sridhar Balakrishnan
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/0228 , H01L21/3105 , H01L21/3141 , H01L21/76807
摘要： A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.
摘要翻译：公开了一种用于形成半导体器件的方法，其中在随后对半导体器件进行图案化之前，由ILD吸收的原子层沉积（ALD）前体物质和/或副产物被除气和/或中和，从而提高随后对在ILD中形成互连结构。

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