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11. 发明申请

US20060233002A1 Memory cell structure 有权
标题翻译：存储单元结构
公开(公告)号：US20060233002A1
公开(公告)日：2006-10-19
申请号：US11093652
申请日：2005-03-30
申请人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Lin
发明人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Lin
IPC分类号： G11C19/08
CPC分类号： G11C11/16
摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
摘要翻译：存储单元结构。第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

12. 发明授权

US08658293B2 Magnetic recording media and method for making the same 有权
标题翻译：磁记录媒体及其制作方法
公开(公告)号：US08658293B2
公开(公告)日：2014-02-25
申请号：US13492978
申请日：2012-06-11
申请人： Chih-Huang Lai , Hao-Cheng Hou , Chao-Chien Chiang
发明人： Chih-Huang Lai , Hao-Cheng Hou , Chao-Chien Chiang
IPC分类号： G11B5/66
CPC分类号： G11B5/653
摘要： A magnetic recording medium includes: a substrate, and a magnetic recording layer that is made from a material having the chemical formula of FexMnyPtz, and that has a bottom surface and an upper surface; wherein x, y, and z indicate average atomic concentrations for Fe, Mn, and Pt, and x+y+z is 100, x and y being greater than 0 and not greater than 65, z being in the range from 35 to 60; and wherein atomic concentration of Fe is gradually decreased from the upper surface to the bottom surface, and atomic concentration of Mn is gradually increased from the upper surface to the bottom surface so that the ferromagnetic property of the magnetic recording layer is gradually reduced from the upper surface to the bottom surface.
摘要翻译：磁记录介质包括：基板和由具有化学式FexMnyPtz的材料制成并且具有底表面和上表面的磁记录层; 其中x，y和z表示Fe，Mn和Pt的平均原子浓度，x + y + z为100，x和y大于0且不大于65，z在35至60的范围内 ; 并且其中Fe的原子浓度从上表面逐渐降低到底面，并且Mn的原子浓度从上表面到底面逐渐增加，使得磁记录层的铁磁性能从上层逐渐减小表面到底面。

13. 发明授权

US07601444B2 Perpendicular magnetic recording medium 失效
标题翻译：垂直磁记录介质
公开(公告)号：US07601444B2
公开(公告)日：2009-10-13
申请号：US11590641
申请日：2006-10-30
申请人： Chih-Huang Lai , David Vokoun , Yu-Yi Liao , Meng-Shian Lin
发明人： Chih-Huang Lai , David Vokoun , Yu-Yi Liao , Meng-Shian Lin
IPC分类号： G11B5/66
CPC分类号： G11B5/732 , G11B5/667 , G11B5/7325
摘要： A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.
摘要翻译：垂直磁记录介质包括：基板; 形成在基板上的软磁性膜; 一种非磁性膜，其包括在软磁膜上形成的由选自铽，钆，镝，钽，铪及其组合的金属材料制成的非晶中间层，形成在非晶中间层上的缓冲层，中心立方结构，以及形成在缓冲层上并具有六方晶体结构的种子层; 以及形成在种子层上的粒状磁记录膜。

14. 发明申请

US20070253244A1 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20070253244A1
公开(公告)日：2007-11-01
申请号：US11380777
申请日：2006-04-28
申请人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
发明人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
摘要翻译：一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。当施加加热电流时，字线可操作以加热磁性薄膜存储元件。将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。薄膜元件的磁状态可以根据霍尔效应的原理来确定。

15. 发明授权

US06417999B1 Magnetoresistive head stabilized structure and method of fabrication thereof 有权
标题翻译：磁阻头稳定结构及其制造方法
公开(公告)号：US06417999B1
公开(公告)日：2002-07-09
申请号：US09497857
申请日：2000-02-04
申请人： Kenneth E. Knapp , Ronald A. Barr , Chih-Huang Lai , Robert Rottmayer
发明人： Kenneth E. Knapp , Ronald A. Barr , Chih-Huang Lai , Robert Rottmayer
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3903 , G11B5/3932
摘要： In at least one embodiment, the method of the present invention is embodied in a method for fabricating a magnetoresistive head structure which includes obtaining a lead and magnetic bias layer, applying a photoresist layer over the lead and magnetic bias layer and about a desired position of a sensor such that the desired position of the sensor is substantially free of the photoresist layer, etching the lead and magnetic bias material substantially at the desired position of the sensor, depositing a sensor at the desired position of the sensor; and removing the photoresist. Obtaining the lead and magnetic bias layers can be done by depositing them. In at least one embodiment, the apparatus of the invention is embodied in a magnetoresistive head structure having a sensor with sides, a lead layer with a portion positioned on either side of the sensor in contact with the sensor so that a sensing current can flow between the portions and through the sensor, and a magnetic bias layer positioned over the lead layer and on either side of the sensor. The magnetic bias layer can be a hard bias or an exchange layer. The sensor preferably is either an anisotopic magnetoresistive element or a spin valve element less than 0.6 &mgr;m wide.
摘要翻译：在至少一个实施例中，本发明的方法体现在一种用于制造磁阻头部结构的方法，该方法包括获得引线和磁偏置层，在引线和磁偏置层上施加光致抗蚀剂层，传感器，使得传感器的期望位置基本上不含光致抗蚀剂层，基本上在传感器的期望位置蚀刻引线和磁偏置材料，将传感器沉积在传感器的所需位置; 并去除光致抗蚀剂。通过放置它们可以获得引线和磁偏置层。在至少一个实施例中，本发明的装置体现在具有侧面传感器的磁阻头结构中，引线层的一部分位于与传感器接触的传感器的任一侧，使得感测电流可以在传感器之间流动部分和通过传感器，以及位于引线层上方和传感器两侧的磁偏置层。磁偏置层可以是硬偏压或交换层。传感器优选地是不对称磁阻元件或小于0.6μm宽的自旋阀元件。

16. 发明授权

US08648401B2 Domain wall assisted spin torque transfer magnetresistive random access memory structure 有权
标题翻译：域壁辅助自旋转矩传递磁阻随机存取存储器结构
公开(公告)号：US08648401B2
公开(公告)日：2014-02-11
申请号：US12884351
申请日：2010-09-17
申请人： Chih-Huang Lai , Sheng-Huang Huang , Kuo-Feng Huang , Ming-Te Liu , Chun-Jung Lin , Ya-Chen Kao , Wen-Cheng Chen
发明人： Chih-Huang Lai , Sheng-Huang Huang , Kuo-Feng Huang , Ming-Te Liu , Chun-Jung Lin , Ya-Chen Kao , Wen-Cheng Chen
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1657 , G11C11/1675 , G11C19/0808 , H01L27/228 , H01L43/08
摘要： A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
摘要翻译：半导体存储器件包括磁性固定并位于衬底的第一区域内的第一铁磁层; 第二铁磁层近似第一铁磁层; 以及介于所述第一铁磁层与所述第二铁磁层的所述第一部分之间的阻挡层。第二铁磁层包括无磁性的第一部分，并且位于第一区域内; 第二部分，磁性地固定在第一方向上并且位于所述基板的第二区域内，所述第二区域从第一侧接触所述第一区域; 以及第三部分，其磁性地固定到第二方向并且位于所述基板的第三区域内，所述第三区域从所述第二侧面接触所述第一区域。

17. 发明授权

US08366994B2 Method for manufacturing cobalt alloy-based ceramic composite sputtering target 有权
标题翻译：制造钴合金陶瓷复合溅射靶的方法
公开(公告)号：US08366994B2
公开(公告)日：2013-02-05
申请号：US12939174
申请日：2010-11-04
申请人： Rong-Zhi Chen , Chun-Hao Chiu , Jui-Tung Chang , Deng-Far Hsu , Chih-Huang Lai
发明人： Rong-Zhi Chen , Chun-Hao Chiu , Jui-Tung Chang , Deng-Far Hsu , Chih-Huang Lai
IPC分类号： C22C32/00
CPC分类号： C23C14/3414 , B22F3/14 , C22C1/0433 , C22C1/05
摘要： A method for manufacturing a cobalt (Co) alloy-based ceramic composite sputtering target is provided. A cobalt ingot and a chromium (Cr) ingot are melted in vacuum and then nebulized to form a cobalt-chromium (CoCr) alloy powder. Additionally, a ceramic powder and a platinum powder are wetly mixed to form a platinum-ceramic (Pt-ceramic) slurry, in which the ceramic powder is applied onto the platinum powder's surface uniformly. Next, the CoCr alloy powder and the Pt-ceramic slurry are wetly mixed to form a CoCrPt-ceramic slurry. Thereafter, the CoCrPt-ceramic slurry is dried, molded and compressed to form the cobalt alloy-based ceramic composite sputtering target. The resulted cobalt alloy-based ceramic composite sputtering target, which has a fine and dense structure, uniform composition and lower magnetic permeability, is beneficial to a magnetron sputter deposition process, as well as a film sputtering process used in the magnetic recording industry.
摘要翻译：提供了一种制造钴（Co）合金系陶瓷复合溅射靶的方法。钴锭和铬（Cr）锭在真空中熔化，然后喷雾形成钴 - 铬（CoCr）合金粉末。另外，将陶瓷粉末和铂粉末湿式混合以形成铂 - 陶瓷（Pt-陶瓷）浆料，其中将陶瓷粉末均匀地涂覆在铂粉末的表面上。接着，将CoCr合金粉末和Pt-陶瓷浆料湿混，形成CoCrPt陶瓷浆料。然后，将CoCrPt陶瓷浆料干燥，成型并压缩，形成钴合金系陶瓷复合溅射靶。得到的钴合金系陶瓷复合溅射靶具有精细且致密的结构，组成均匀性和较低的磁导率，有利于磁控溅射沉积工艺以及在磁记录工业中使用的薄膜溅射工艺。

18. 发明授权

US07989098B2 Perpendicular magnetic recording medium 有权
标题翻译：垂直磁记录介质
公开(公告)号：US07989098B2
公开(公告)日：2011-08-02
申请号：US12487550
申请日：2009-06-18
申请人： Chih-Huang Lai , Jung-Wei Liao , Hao-Cheng Hou , Meng-Shian Lin
发明人： Chih-Huang Lai , Jung-Wei Liao , Hao-Cheng Hou , Meng-Shian Lin
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65
摘要： A perpendicular magnetic recording medium includes a substrate, an antiferromagnetic layer disposed above the substrate, and a perpendicular magnetic recording layer formed on the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer.
摘要翻译：垂直磁记录介质包括衬底，设置在衬底上方的反铁磁层和形成在反铁磁层上并与反铁磁层交换耦合的垂直磁记录层。

19. 发明授权

US07847668B2 Inductor 有权
标题翻译：电感器
公开(公告)号：US07847668B2
公开(公告)日：2010-12-07
申请号：US11969307
申请日：2008-01-04
申请人： Chih-Huang Lai , Ruo-Fan Jiang , Nazmun Nahar Shams , Chao-Chien Chiang
发明人： Chih-Huang Lai , Ruo-Fan Jiang , Nazmun Nahar Shams , Chao-Chien Chiang
IPC分类号： G11B5/17 , H01F5/00
CPC分类号： H01F17/0006 , B82Y25/00 , H01F3/10 , H01F10/3218 , H01F17/04 , H01F41/046 , H01F2017/0066
摘要： An inductor includes: a substrate; an insulator layer; a conductive coil; and a permeability-enhancing film of a multi-layer structure. The multi-layer structure includes at least one repeating unit that has at least two layers. The two layers exhibit an exchange-coupling effect and include a first ferromagnetic layer of a first ferromagnetic material and an exchange-coupling layer.
摘要翻译：电感器包括：基板; 绝缘体层; 导电线圈; 以及多层结构的渗透性增强膜。多层结构包括至少一个具有至少两层的重复单元。两层表现出交换耦合效应，并且包括第一铁磁材料的第一铁磁层和交换耦合层。

20. 发明申请

US20100159280A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM 有权
标题翻译：全能磁记录介质
公开(公告)号：US20100159280A1
公开(公告)日：2010-06-24
申请号：US12487550
申请日：2009-06-18
申请人： Chih-Huang Lai , Jung-Wei Liao , Hao-Cheng Hou , Meng-Shian Lin
发明人： Chih-Huang Lai , Jung-Wei Liao , Hao-Cheng Hou , Meng-Shian Lin
IPC分类号： G11B5/33
CPC分类号： G11B5/66 , G11B5/65
摘要： A perpendicular magnetic recording medium includes a substrate, an antiferromagnetic layer disposed above the substrate, and a perpendicular magnetic recording layer formed on the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer.
摘要翻译：垂直磁记录介质包括衬底，设置在衬底上方的反铁磁层和形成在反铁磁层上并与反铁磁层交换耦合的垂直磁记录层。

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