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11. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

12. 发明授权

US5932295A Method and apparatus for misted liquid source deposition of thin films with increased yield 失效
标题翻译：用于雾化液体源沉积薄膜的方法和装置，其产率增加
公开(公告)号：US5932295A
公开(公告)日：1999-08-03
申请号：US963083
申请日：1997-11-03
申请人： Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , B05D1/00 , B05D1/04 , C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108 , B05D7/24 , B05D3/02 , B05D5/12 , C23C16/00
CPC分类号： C23C18/14 , B05D1/007 , B05D1/04 , C23C16/45561 , C23C18/1216 , H01L21/31691
摘要： A mist generator produces a mist from a liquid precursor. The mist is charged and accelerated by a pair of charged electrodes in an acceleration chamber. The mist passes through a conduit charged to the same polarity of the mist particles, to a deposition chamber where they are deposited on a substrate having the opposite polarity as the particles. Infrared lamps heat the mist particles in the acceleration chamber to a temperature below the temperature at which the compounds and solvent in the liquid precursor decompose. In one embodiment the deposition chamber is tubular and a plurality of substrates are held within the chamber in a position substantially perpendicular to the direction of mist flow in the chamber. A heater and an electrical field generator in the tube add sufficient energy to the mist as it passes through the tube to provide uniform deposition of the mist on the plurality of substrates.
摘要翻译：雾发生器从液体前体产生雾。雾通过加速室中的一对充电电极进行充电和加速。雾气通过与雾颗粒相同极性的导管进入淀积室，在沉积室中沉积在具有与颗粒相反的极性的基底上。红外灯将加速室中的雾粒加热到低于液体前体中的化合物和溶剂分解的温度的温度。在一个实施例中，沉积室是管状的，并且多个基板被保持在室内大致垂直于室中雾流方向的位置。管中的加热器和电场发生器在雾通过管时向雾中增加足够的能量以提供雾在多个基板上的均匀沉积。

13. 发明授权

US5519234A Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current 失效
标题翻译：铁电介质存储单元可以至少切换千兆周期，并具有低疲劳 - 具有高介电常数和低漏电流
公开(公告)号：US5519234A
公开(公告)日：1996-05-21
申请号：US154927
申请日：1993-11-18
申请人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
发明人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/12 , H01L29/94 , H01L31/113
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+ak B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译：集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + ak B1y1 + b1B2y2 + b2。。。 Blyl + blQz-2，其中A1，A2。。。 Aj表示钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。

14. 发明授权

US07154768B2 Non-destructive readout of ferroelectric memories 有权
标题翻译：铁电存储器的非破坏性读出
公开(公告)号：US07154768B2
公开(公告)日：2006-12-26
申请号：US11030277
申请日：2005-01-06
申请人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C11/22 , G11C7/00
CPC分类号： G11C11/22
摘要： A device and method of reading a ferroelectric memory, including providing a ferroelectric memory including a ferroelectric memory cell, a charge integrator, and a bit line connecting the ferroelectric memory cell and the charge integrator. Pulses are applied to the ferroelectric memory cell, where each of the pulses are of a value lower than that which will destroy data stored in the memory cell. Output voltage values from the ferroelectric memory cell are accumulated by the charge integrator in response to each pulse. The output of the charge integrator may be read to determine whether the datum value stored in the memory cell is a logic high or low value. In one embodiment, the output of the charge integrator is read at a predetermined time after starting the pulses.
摘要翻译：一种读取铁电存储器的装置和方法，包括提供包括铁电存储单元，电荷积分器和连接铁电存储单元和电荷积分器的位线的铁电存储器。脉冲被施加到铁电存储器单元，其中每个脉冲的值低于将破坏存储在存储单元中的数据的值。响应于每个脉冲，电荷积分器累积来自铁电存储单元的输出电压值。可以读取电荷积分器的输出以确定存储在存储单元中的数据值是逻辑高还是低值。在一个实施例中，在开始脉冲之后的预定时间读取电荷积分器的输出。

15. 发明授权

US07075134B2 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same 有权
公开(公告)号：US07075134B2
公开(公告)日：2006-07-11
申请号：US10626413
申请日：2003-07-24
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
IPC分类号： H01L31/119 , H01L27/108
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , G11C11/22 , H01L21/7687 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.

16. 发明授权

US06815223B2 Low thermal budget fabrication of ferroelectric memory using RTP 有权
公开(公告)号：US06815223B2
公开(公告)日：2004-11-09
申请号：US10302441
申请日：2002-11-22
申请人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01G706
CPC分类号： H01L28/55 , C30B29/32 , C30B29/68
摘要： A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.-sec, preferably less than 50,000° C.-sec.

17. 发明授权

US06639262B2 Metal oxide integrated circuit on silicon germanium substrate 失效
标题翻译：硅锗基板上的金属氧化物集成电路
公开(公告)号：US06639262B2
公开(公告)日：2003-10-28
申请号：US09906285
申请日：2001-07-16
申请人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
发明人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
IPC分类号： H01L31119
CPC分类号： H01L21/02197 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02282 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.
摘要翻译：集成电路电容器，其中电容器电介质是在硅锗衬底上方形成的具有小于200纳米的晶粒尺寸的BST薄膜。典型的晶粒尺寸为40nm以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前进行二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在600℃至850℃的温度下在氧气中进行炉退火。

18. 发明授权

US06559469B1 Ferroelectric and high dielectric constant transistors 失效
标题翻译：铁电和高介电常数晶体管
公开(公告)号：US06559469B1
公开(公告)日：2003-05-06
申请号：US09686552
申请日：2000-10-11
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , C23C16/448 , C23C16/45561 , C23C18/1216 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , G11C11/22 , G11C11/223 , H01L21/31691 , H01L27/10805 , H01L28/55 , H01L28/60
摘要： An integrated circuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz−q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.
摘要翻译：集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + skB1y1 + b1B2y2 + b2。。。 Blyl + blQz-q，其中A1，A2。。。 Aj代表钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单元中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中的铁电FET中。其他的是高介电常数材料，其在长期使用中不会劣化或分解，并且作为在绝缘体中的栅绝缘体。

19. 发明授权

US06537830B1 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material 失效
标题翻译：制造具有多晶结晶取向铁电材料的铁电FET的方法
公开(公告)号：US06537830B1
公开(公告)日：2003-03-25
申请号：US09533204
申请日：2000-03-23
申请人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
发明人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
IPC分类号： H01L2100
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：集成电路中的非破坏性读出非易失性铁电场效应晶体管（“FET”）存储器，其包含多晶结晶取向铁电材料的薄膜。优选地，材料是多晶c轴取向层状超晶格材料。更优选的是c轴取向的钽酸铋铋或铌酸铋钽铌酸盐。

20. 发明授权

US6104049A Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same 有权
标题翻译：具有厚度为90纳米或更小的铁电薄膜的铁电存储器及其制造方法
公开(公告)号：US6104049A
公开(公告)日：2000-08-15
申请号：US228578
申请日：1999-01-11
申请人： Narayan Solayappan , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan , Shinichiro Hayashi , Tatsuo Otsuki
发明人： Narayan Solayappan , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan , Shinichiro Hayashi , Tatsuo Otsuki
IPC分类号： G11C11/22 , H01L21/02 , H01L21/316 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/60 , H01L21/768
摘要： A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300.degree. C. for five minutes, then RTP annealed at 675.degree. C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700.degree. C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 90 nm. A second electrode is applied to form a capacitor, and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0.ltoreq.v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.
摘要翻译：将包含金属的液体前体涂层施加到第一电极，在氧气环境中在不高于300℃的温度下在热板上烘烤五分钟，然后在675℃下进行RTP退火30秒。然后将涂层在氧气或氮气环境中在700℃下退火1小时，以形成厚度不超过90nm的层状超晶格材料薄膜。施加第二电极以形成电容器，并且在氧气或氮气环境中在不超过700℃的温度下进行后退火。如果该材料是钽酸铋锶，则该前体含有痣的锶，v 铋的摩尔当量和钽的摩尔当量，其中0.8为2.0，2.0

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