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11. 发明授权

US07067867B2 Large-area nonenabled macroelectronic substrates and uses therefor 有权
标题翻译：大面积未使用的大电子基板及其用途
公开(公告)号：US07067867B2
公开(公告)日：2006-06-27
申请号：US10674060
申请日：2003-09-30
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94 , H01L29/76 , H01L21/336 , H01L21/8234
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

12. 发明申请

US20080041814A1 Systems and Methods for Harvesting and Integrating Nanowires 有权
标题翻译：收获和整合纳米线的系统和方法
公开(公告)号：US20080041814A1
公开(公告)日：2008-02-21
申请号：US11839778
申请日：2007-08-16
申请人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
发明人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
IPC分类号： B32B9/00 , H01B13/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

13. 发明申请

US20070228439A1 Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
标题翻译：大面积纳米大电子基板及其用途
公开(公告)号：US20070228439A1
公开(公告)日：2007-10-04
申请号：US11760382
申请日：2007-06-08
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/786
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

14. 发明申请

US20060256059A1 Integrated displays using nanowire transistors 有权
标题翻译：使用纳米线晶体管的集成显示器
公开(公告)号：US20060256059A1
公开(公告)日：2006-11-16
申请号：US11490630
申请日：2006-07-21
申请人： Dave Stumbo , Stephen Empedocles
发明人： Dave Stumbo , Stephen Empedocles
IPC分类号： G09G3/36
CPC分类号： H01L27/1222 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02F1/13454 , G02F2202/36 , G09G3/20 , G09G3/3648 , G09G2300/08 , G11C13/025 , H01L27/1214 , H01L27/283 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0512
摘要： The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.
摘要翻译：本发明涉及使用纳米线晶体管的显示器。特别地，描述了使用纳米线像素晶体管，纳米线行晶体管，纳米线列晶体管和纳米线边缘电子器件的液晶显示器。纳米线像素晶体管用于控制跨越包含液晶的像素施加的电压。一对纳米线行晶体管用于转换沿着连接到该对纳米线行晶体管的行迹线的导通和截止的纳米线像素晶体管。纳米线列晶体管用于沿着连接到纳米线柱晶体管的列迹线设置的纳米线像素晶体管施加电压。还提供了包括有机发光二极管（OLED）显示器，纳米管场效应显示器，等离子体显示器，微镜显示器，微机电（MEM））显示器，电致变色显示器和使用纳米线晶体管的电泳显示器的显示器。

15. 发明申请

US20060211183A1 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US20060211183A1
公开(公告)日：2006-09-21
申请号：US11405864
申请日：2006-04-18
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

16. 发明授权

US07064372B2 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US07064372B2
公开(公告)日：2006-06-20
申请号：US11004380
申请日：2004-12-03
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94 , H01L29/76
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

17. 发明申请

US20060008942A1 Systems and methods for harvesting and integrating nanowires 有权
标题翻译：用于收获和整合纳米线的系统和方法
公开(公告)号：US20060008942A1
公开(公告)日：2006-01-12
申请号：US11117707
申请日：2005-04-29
申请人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
发明人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
IPC分类号： H01L51/40 , H01L21/31 , H01L21/20 , H01L21/336 , B29C47/00 , D01F9/12 , H01L21/00 , D02G3/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

18. 发明授权

US08405828B2 Spatial positioning of spectrally labeled beads 有权
公开(公告)号：US08405828B2
公开(公告)日：2013-03-26
申请号：US12620475
申请日：2009-11-17
申请人： Stephen Empedocles , Andrew Watson , Jian Jin
发明人： Stephen Empedocles , Andrew Watson , Jian Jin
IPC分类号： G01J3/28 , G01J3/00 , G01J3/30 , G01J3/42 , G01N21/29
CPC分类号： G01N21/272 , B01J2219/00317 , B01J2219/00432 , B01J2219/005 , B01J2219/00574 , B01J2219/00576 , B01J2219/00578 , B01J2219/00585 , B01J2219/00596 , B01J2219/00648 , B01J2219/00657 , B01J2219/00659 , B01J2219/00677 , B01J2219/00707 , B01J2219/00722 , B01J2219/00743 , B01L3/5025 , B01L3/502715 , B01L3/502761 , B01L3/5085 , B01L3/545 , B01L2200/0668 , B01L2300/021 , B01L2300/0819 , B01L2300/0829 , B01L2400/0454 , B01L2400/0457 , B82Y30/00 , C40B40/06 , C40B60/14 , G01N21/25 , G01N21/253 , G01N21/274 , G01N21/278 , G01N21/6428 , G01N21/6452 , G01N21/6456 , G01N21/6486 , G01N21/6489 , G01N33/54373 , G01N2015/0092 , G01N2015/1472 , G01N2015/1497 , G01N2021/6441 , G01N2021/6482 , G01N2035/00158 , G01N2035/00742 , G01N2035/00752 , G01N2201/04 , G01N2201/06113 , G01N2201/12
摘要： Devices, systems, kits, and methods for detecting and/or identifying a plurality of spectrally labeled bodies well-suited for performing multiplexed assays. By spectrally labeling the beads with materials which generate identifiable spectra, a plurality of beads may be identified within the fluid. Reading of the beads is facilitated by restraining the beads in arrays, and/or using a focused laser.

19. 发明申请

US20100139770A1 NANOSTRUCTURE AND NANOCOMPOSITE BASED COMPOSITIONS AND PHOTOVOLTAIC DEVICES 失效
标题翻译：纳米结构和纳米复合材料组合物和光电器件
公开(公告)号：US20100139770A1
公开(公告)日：2010-06-10
申请号：US11499599
申请日：2006-08-04
申请人： Erik Scher , Mihai A. Buretea , Calvin Chow , Stephen Empedocles , Andreas Meisel , J. Wallace Parce
发明人： Erik Scher , Mihai A. Buretea , Calvin Chow , Stephen Empedocles , Andreas Meisel , J. Wallace Parce
IPC分类号： H01L31/00
CPC分类号： H01L31/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L31/0384 , H01L51/0036 , H01L51/0037 , H01L51/4213 , H01L51/4226 , H01L51/426 , Y02E10/549 , Y02P70/521
摘要： Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.
摘要翻译：提供纳米复合光伏器件，其通常包括作为光活性层的至少一部分的半导体纳米晶体。包含核 - 壳纳米结构和/或两组纳米结构的光伏器件和其它分层器件，其中纳米结构不一定是纳米复合材料的一部分，也是本发明的特征。还提供了用于这种装置的各种架构，包括柔性和刚性架构，平面和非平面架构等，以及结合这种装置的系统，以及用于制造这种装置的方法和系统。包含两种不同材料的纳米结构群的组合物也是本发明的特征。

20. 发明申请

US20070296032A1 Artificial dielectrics using nanostructures 失效
标题翻译：使用纳米结构的人造电介质
公开(公告)号：US20070296032A1
公开(公告)日：2007-12-27
申请号：US11203432
申请日：2005-08-15
申请人： David Stumbo , Stephen Empedocles , Francisco Leon , J. Parce
发明人： David Stumbo , Stephen Empedocles , Francisco Leon , J. Parce
IPC分类号： H01L27/12
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/81 , H01L29/0673 , H01L29/4908 , H01L51/0537 , Y10S977/743 , Y10S977/745 , Y10S977/762 , Y10S977/813 , Y10S977/936
摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials
摘要翻译：公开了使用纳米结构的人造电介质，例如纳米线。在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。使用纳米结构的人造电介质可以实现非常高的介电常数。可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。各种电子器件可以使用具有纳米结构的人造电介质来提高性能。示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料

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