专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20130221077A1 METHOD FOR BRAZING ALUMINUM MEMBERS AND BRAZING APPARATUS USED FOR SAME 有权
标题翻译：用于制造铝合金构件的方法和用于其的制动装置
公开(公告)号：US20130221077A1
公开(公告)日：2013-08-29
申请号：US13880777
申请日：2011-10-26
申请人： Kiichi Kanda , Kenichi Watanabe , Yutaka Yanagawa
发明人： Kiichi Kanda , Kenichi Watanabe , Yutaka Yanagawa
IPC分类号： B23K1/19
CPC分类号： B23K1/19 , B23K1/0012 , B23K1/008 , B23K35/002 , B23K35/284 , B23K35/286 , B23K35/383 , B23K2101/006 , B23K2101/14 , B23K2103/10 , B32B15/016 , F28F21/084 , F28F21/089 , G01J3/443 , G01N21/67
摘要： Provided are: a method for brazing an aluminum alloy, which is characterized in that brazing is carried out by heating an aluminum brazing sheet without using flux in a furnace that is in an argon gas-containing atmosphere, said aluminum brazing sheet comprising a core material that is composed of aluminum or an aluminum alloy and a brazing filler material that is composed of an aluminum alloy and clad on one surface or both surfaces of the core material, and said core material and/or said brazing filler material containing Mg; and a brazing apparatus which is used in the method for brazing an aluminum alloy. The brazing method has good and stable brazing properties and is applicable in industrial practice.
摘要翻译：本发明提供一种钎焊铝合金的方法，其特征在于，通过在不含有氩气的气氛的炉内不使用助熔剂的情况下加热铝钎焊片进行钎焊，所述铝钎焊片由芯材由铝或铝合金构成的钎料和由铝合金构成并且在芯材的一个表面或两个表面上包层的钎料，所述芯材和/或含有Mg的钎料; 以及用于钎焊铝合金的方法中的钎焊装置。钎焊方法具有良好稳定的钎焊性能，适用于工业实践。

12. 发明申请

US20130181137A1 Neutron Radiation Detector, Neutron Radiation Detection Scintillator and Method for Discriminating Between Neutron Radiation and Gamma Radiation 审中-公开
标题翻译：中子辐射检测器，中子辐射检测闪烁体和中子辐射与伽马辐射鉴别方法
公开(公告)号：US20130181137A1
公开(公告)日：2013-07-18
申请号：US13698390
申请日：2011-05-18
申请人： Kenichi Watanabe , Atsushi Yamazaki , Akira Uritani , Yoshiyuki Kondo , Tetsuo Iguchi , Noriaki Kawaguchi , Kentaro Fukuda , Toshihisa Suyama , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota
发明人： Kenichi Watanabe , Atsushi Yamazaki , Akira Uritani , Yoshiyuki Kondo , Tetsuo Iguchi , Noriaki Kawaguchi , Kentaro Fukuda , Toshihisa Suyama , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota
IPC分类号： G01T3/06
CPC分类号： G01T3/06 , C09K11/7734 , C30B15/00 , C30B29/12
摘要： A neutron radiation detector has a function that discriminates between neutron radiation and γ radiation based on a difference in pulse shape between photodetection signals from a neutron radiation detection scintillator, which includes a Ce-containing LiCaAlF6 single crystal.
摘要翻译：中子辐射检测器具有基于来自包含含铈LiCaAlF6单晶的中子辐射检测闪烁体的光检测信号之间的脉冲形状差异来区分中子辐射和伽马辐射的功能。

13. 发明授权

US08391344B2 Transceiving device of pulse signal 有权
标题翻译：脉冲信号的收发器
公开(公告)号：US08391344B2
公开(公告)日：2013-03-05
申请号：US12473971
申请日：2009-05-28
申请人： Kenichi Watanabe , Yasunobu Asada , Shinji Ogawa
发明人： Kenichi Watanabe , Yasunobu Asada , Shinji Ogawa
IPC分类号： H04B1/38
CPC分类号： G01S15/104 , G01S7/52003 , G01S15/8961 , G01S15/96
摘要： A transceiving device includes a transmission signal generating module for generating a transmission signal that is frequency-modulated by a predetermined frequency sweep width, a transceiver module for transmitting a pulse signal having substantially the same waveform as a waveform of the transmission signal and receiving an echo signal corresponding to the transmission signal from a detection range, and a pulse-compression filter for pulse-compressing the echo signal received by the transceiver module. The pulse-compression filter has an input/output characteristic. The characteristic has, when the pulse-compression filter is inputted with an input signal having substantially the same waveform as the waveform of the transmission signal, a window function shape such that a phase spectrum of an output signal corresponding to the input signal is linear and an amplitude spectrum of the output signal does not have a frequency component other than a frequency band with which a frequency sweep is carried out.
摘要翻译：收发装置包括：发送信号生成模块，用于生成以预定的频率扫描宽度进行频率调制的发送信号;发送模块，用于发送具有与发送信号的波形基本相同的波形的脉冲信号，并接收回波信号对应于来自检测范围的发送信号，以及脉冲压缩滤波器，用于脉冲压缩由收发器模块接收的回波信号。脉冲压缩滤波器具有输入/输出特性。当脉冲压缩滤波器输入具有与发送信号的波形基本相同的波形的输入信号时，该特性具有窗口函数形状，使得与输入信号对应的输出信号的相位谱线性为线性，输出信号的幅度谱不具有除了执行频率扫描的频带之外的频率分量。

14. 发明申请

US20120273953A1 SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE 有权
公开(公告)号：US20120273953A1
公开(公告)日：2012-11-01
申请号：US13548966
申请日：2012-07-13
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L23/522
CPC分类号： H01L21/76877 , H01L21/76804 , H01L21/76843 , H01L23/481 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L23/53204 , H01L23/53223 , H01L23/53228 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L23/562 , H01L23/58 , H01L23/585 , H01L29/0607 , H01L29/0611 , H01L29/0619 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

15. 发明授权

US08284413B2 Information processing apparatus and program 有权
标题翻译：信息处理装置和程序
公开(公告)号：US08284413B2
公开(公告)日：2012-10-09
申请号：US12007837
申请日：2008-01-16
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： G06F15/00 , G06F3/12 , G06K1/00
CPC分类号： H04N1/00838 , H04N1/00832 , H04N1/00854 , H04N1/00925 , H04N1/4413 , H04N1/4433 , H04N2201/0091
摘要： An information processing apparatus, comprising: an output unit for outputting output information to a user; a receiving unit for receiving function-restricting information showing whether a printer is in a function-restricted status, from the printer in which utilization of a predetermined function is restricted where it is set that utilization of the predetermined function is restricted in the second print setting existing in the printer side even where it is set that the predetermined function equipped by the printer is utilized in the first print setting existing in the information processing apparatus side; and a controller for controlling so as to always output via the output unit the output information showing whether the printer is in the function-restricted status, based on the function restricting information received by the receiving unit.
摘要翻译：一种信息处理装置，包括：输出单元，用于向用户输出输出信息; 接收单元，用于从其中设定在第二打印设置中限制了预定功能的使用被限制的情况下限制预定功能的利用的打印机接收表示打印机是否处于功能受限状态的功能限制信息存在于打印机侧，即使在设定为在信息处理设备侧存在的第一打印设置中利用由打印机配备的预定功能的情况下，以及控制器，用于基于由接收单元接收的功能限制信息，经由输出单元总是输出表示打印机是否处于功能受限状态的输出信息。

16. 发明授权

US08242760B2 Constant-voltage circuit device 有权
标题翻译：恒压电路装置
公开(公告)号：US08242760B2
公开(公告)日：2012-08-14
申请号：US12546945
申请日：2009-08-25
申请人： Yoshiki Takagi , Kenichi Watanabe
发明人： Yoshiki Takagi , Kenichi Watanabe
IPC分类号： G05F1/569
CPC分类号： G05F1/56 , G05F1/573
摘要： A constant-voltage circuit converts a voltage input to an input terminal and outputs a predetermined constant voltage from an output terminal. The constant-voltage circuit includes an output transistor to output an electrical current to the output terminal in response to a control signal, a reference voltage circuit to generate a predetermined reference voltage, a control circuit to adjust a voltage proportional to the output voltage output from the output terminal to the reference voltage output from the reference voltage circuit by controlling the output transistor and a soft start circuit including a capacitor for soft start that is charged at start-up and a current control unit to control an electrical current supplied to the reference voltage circuit. The current control unit adjusts the reference voltage to a voltage determined by the capacitor for soft start at the start-up until the reference voltage reaches a desired voltage.
摘要翻译：恒压电路将输入的电压转换为输入端子，并从输出端子输出预定的恒定电压。恒压电路包括输出晶体管，以响应于控制信号将电流输出到输出端，用于产生预定参考电压的参考电压电路，用于调节与输出电压成比例的电压的控制电路输出端子通过控制输出晶体管而从参考电压电路输出的参考电压和包括在启动时被充电的用于软启动的电容器的软启动电路和电流控制单元来控制提供给参考的电流电压电路。电流控制单元将参考电压调节到由电容器确定的电压，以在启动时进行软启动，直到参考电压达到所需电压。

17. 发明授权

US08227848B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227848B2
公开(公告)日：2012-07-24
申请号：US12461136
申请日：2009-08-03
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L27/108
CPC分类号： H01L21/486 , H01L23/5223 , H01L23/5226 , H01L28/40 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a second metal layer 113 formed in the hole 112A, a dielectric insulating film 135 on the first metal layer 112, and second wiring layers 114-116 on the dielectric insulating film 135, wherein the first metal layer 112 constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers 114-116 constitutes the upper electrode, and a capacitor 160 is constructed of the lower electrode, the dielectric insulating film 135 and the upper electrode P1.
摘要翻译：基板在第一布线层111上设置有第一布线层111，层间绝缘膜132，形成在层间绝缘膜中的孔112A，覆盖孔112A的第一金属层112，形成在第一布线层111上的第二金属层113 孔112A，第一金属层112上的介电绝缘膜135和介电绝缘膜135上的第二布线层114-116，其中第一金属层112构成下电极的至少一部分，面向第二布线层114-116的下电极构成上电极，电容器160由下电极，电介质绝缘膜135和上电极P1构成。

18. 发明申请

US20120175736A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120175736A1
公开(公告)日：2012-07-12
申请号：US13426014
申请日：2012-03-21
申请人： Kenichi Watanabe
发明人： Kenichi Watanabe
IPC分类号： H01L29/92 , H01L21/02 , H01L21/768
CPC分类号： H01L21/486 , H01L23/5223 , H01L23/5226 , H01L28/40 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a second metal layer 113 formed in the hole 112A, a dielectric insulating film 135 on the first metal layer 112, and second wiring layers 114-116 on the dielectric insulating film 135, wherein the first metal layer 112 constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers 114-116 constitutes the upper electrode, and a capacitor 160 is constructed of the lower electrode, the dielectric insulating film 135 and the upper electrode P1.
摘要翻译：基板在第一布线层111上设置有第一布线层111，层间绝缘膜132，形成在层间绝缘膜中的孔112A，覆盖孔112A的第一金属层112，形成在第一布线层111上的第二金属层113 孔112A，第一金属层112上的介电绝缘膜135和介电绝缘膜135上的第二布线层114-116，其中第一金属层112构成下电极的至少一部分，面向第二布线层114-116的下电极构成上电极，电容器160由下电极，电介质绝缘膜135和上电极P1构成。

19. 发明申请

US20120149190A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120149190A1
公开(公告)日：2012-06-14
申请号：US13398254
申请日：2012-02-16
申请人： Kenichi Watanabe , Nobuhiro Misawa , Satoshi Otsuka
发明人： Kenichi Watanabe , Nobuhiro Misawa , Satoshi Otsuka
IPC分类号： H01L21/768
CPC分类号： H01L23/562 , H01L23/3192 , H01L23/564 , H01L24/05 , H01L2224/02166 , H01L2224/05567 , H01L2924/00014 , H01L2924/0002 , H01L2924/12044 , H01L2224/05552
摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.
摘要翻译：一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

20. 发明授权

US08143153B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08143153B2
公开(公告)日：2012-03-27
申请号：US13075463
申请日：2011-03-30
申请人： Kenichi Watanabe , Nobuhiro Misawa , Satoshi Otsuka
发明人： Kenichi Watanabe , Nobuhiro Misawa , Satoshi Otsuka
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/311
CPC分类号： H01L23/562 , H01L23/3192 , H01L23/564 , H01L24/05 , H01L2224/02166 , H01L2224/05567 , H01L2924/00014 , H01L2924/0002 , H01L2924/12044 , H01L2224/05552
摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.
摘要翻译：一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式