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11. 发明申请

US20100090313A1 III-V Compound Crystal and Semiconductor Electronic Circuit Element 有权
标题翻译： III-V复合晶体和半导体电子电路元件
公开(公告)号：US20100090313A1
公开(公告)日：2010-04-15
申请号：US12617733
申请日：2009-11-13
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
摘要翻译：即使在使用各种基板的情况下，也可以低成本地容易地获得优质的III-V晶体，而不会引起裂纹，并且可以用于以高质量和高产率制造半导体器件。 III-V晶体的特征在于以下特性：III-V族化合物晶体的载流子浓度，电阻率和位错密度均匀，沿着表面的±30％变化范围内; III-V复合晶体从c面取向偏离，使得晶体表面不包括其与c面的离轴角为0°的任何区域; 并且在III-V族化合物的晶体中心的XRD中的半峰全宽不大于150arcsec。

12. 发明申请

US20080299748A1 Group III-V Crystal 审中-公开
标题翻译： III-V族晶体
公开(公告)号：US20080299748A1
公开(公告)日：2008-12-04
申请号：US12188214
申请日：2008-08-08
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
摘要翻译：即使在使用各种基板时，也能以低成本容易地获得优质的III-V晶体而不引起裂纹。 III-V晶体通过制造方法获得，其特征在于包括：在基板（1）上沉积金属膜（2）的步骤; 在存在图案化化合物的气氛中对金属膜（2）进行热处理的工序; 以及在热处理后在金属膜上生长III-V族晶体（4）的步骤。或者，III-V晶体制造方法的特征在于包括：在热处理后在金属膜上生长III-V族化合物缓冲膜的步骤; 以及在III-V族化合物缓冲膜上生长III-V族晶体的步骤。

13. 发明授权

US08304334B2 III-V compound crystal and semiconductor electronic circuit element 有权
公开(公告)号：US08304334B2
公开(公告)日：2012-11-06
申请号：US13368329
申请日：2012-02-07
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/28
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.

14. 发明申请

US20080006201A1 Method of growing gallium nitride crystal 审中-公开
标题翻译：生长氮化镓晶体的方法
公开(公告)号：US20080006201A1
公开(公告)日：2008-01-10
申请号：US11826798
申请日：2007-07-18
申请人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B25/04
CPC分类号： C30B25/183 , C30B23/025
摘要： The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts, suppressing GaN from growing on masks, inducing facets starting from edges of the masks and rising to tops of GaN crystals on exposed parts, maintaining the facets, making defect accumulating regions H on masked parts. attracting dislocations into the defect accumulating regions H on masks and reducing dislocation density of the surrounding GaN crystals on exposed parts. The defect accumulating regions H on masks have four types. The best of the defect accumulating regions H is an inversion region J. Occurrence of the inversion regions J requires preceding appearance of beaks with inversion orientation on the facets. Sufficient inversion regions J are produced at an initial stage by maintaining the temperature Tj at 900° C. to 990° C. without fail. Allowable inversion regions J beaks are produced at an initial stage by the sets of temperatures T(K) and growing speeds Vj (μm/h) satisfying −4.39×105/T+3.87×102
摘要翻译：小面生长方法通过制备下衬底，在下衬底上形成点阵掩模或剥离掩模来生长GaN晶体，在气相中生长GaN，在曝光部分上生长GaN，抑制GaN在掩模上生长，从掩模的边缘开始引起刻面并在暴露部分上升到GaN晶体的顶部，保持刻面，使掩模部件上的缺陷积聚区域H。在掩模上吸引缺陷积聚区H的位错，并降低暴露部分周围GaN晶体的位错密度。掩模上的缺陷积聚区域H具有四种类型。缺陷累积区域H中的最好的是反转区域J.反转区域J的出现需要在面上具有反转取向的喙前面的出现。通过将温度Tj保持在900℃至990℃而在初始阶段产生足够的反转区域J. 在初始阶段通过温度T（K）和生长速度Vj（mum / h）的集合产生允许的反转区域J喙，满足-4.39×10 5 / T +3.87×10 2

15. 发明授权

US07303630B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07303630B2
公开(公告)日：2007-12-04
申请号：US10933291
申请日：2004-09-03
申请人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
IPC分类号： C30B21/08
CPC分类号： C30B29/40 , C30B25/18
摘要： Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
摘要翻译：点状种子以规则图案植入下衬底。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。方面组装相邻区域的位错，将位错累积到坑底，并在种子上形成闭合缺陷积聚区（H）。多晶或倾斜取向单晶闭合缺陷积聚区（H）由于热膨胀各向异性而引起微裂纹。最好的是定向反转单晶闭合缺陷积聚区（H）。在早期阶段，在高面上诱导取向反突起，并在种子之上彼此统一。在均匀突起上生长的取向反相晶体成为取向反单晶闭合缺陷积聚区（H）。

16. 发明申请

US20050183658A1 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate 有权
标题翻译： Al x In y Ga 1-x-y N混合晶体基板，生长Al x In y Ga 1-x-y N混合晶体基板的方法和制造Al x In y Ga 1-x-y N混合晶体基板的方法
公开(公告)号：US20050183658A1
公开(公告)日：2005-08-25
申请号：US11067928
申请日：2005-03-01
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Koji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B23/02 , C30B25/02 , C30B1/00
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an AlxInyGa1-x-yN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：通过形成具有平行条纹的种子掩模，并定期地和周期性地形成低位错密度的Al x In x Ga 1-xy N单晶衬底在底部衬底上对准，在小平面生长条件下生长Al x Al x In y Ga 1-xy N晶体，形成平行面的重复保留小平面山谷和小平面谷，产生伴随谷的大量缺陷积聚区（H），产生小面后的低位错单晶区（Z），使C平面生长区（ Y）在平面之后，通过生长小面的作用将小平面上的小平面上的位错收集到谷中，减少低位错单晶区域（Z）和C平面生长区域（Y）中的位错，并累积大量缺陷积聚区域（H）的芯（S）或界面（K）中的位错。

17. 发明授权

US06667184B2 Single crystal GaN substrate, method of growing same and method of producing same 有权
标题翻译：单晶GaN衬底，生长方法及其生产方法
公开(公告)号：US06667184B2
公开(公告)日：2003-12-23
申请号：US10246559
申请日：2002-09-19
申请人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。闭合缺陷积聚区（H）永久性停滞位错。释放位错，径向平面缺陷组件和线性缺陷组件被禁止。周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

18. 发明申请

US20120142168A1 III-V Compound Crystal and Semiconductor Electronic Circuit Element 有权
标题翻译： III-V复合晶体和半导体电子电路元件
公开(公告)号：US20120142168A1
公开(公告)日：2012-06-07
申请号：US13368329
申请日：2012-02-07
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
摘要翻译：即使在使用各种基板的情况下，也可以低成本地容易地获得优质的III-V晶体，而不会引起裂纹，并且可以用于以高质量和高产率制造半导体器件。 III-V晶体的特征在于以下特性：III-V族化合物晶体的载流子浓度，电阻率和位错密度均匀，沿着表面的±30％变化范围内; III-V复合晶体从c面取向偏离，使得晶体表面不包括其与c面的离轴角为0°的任何区域; 并且在III-V族化合物的晶体中心的XRD中的半峰全宽不大于150arcsec。

19. 发明授权

US08134223B2 III-V compound crystal and semiconductor electronic circuit element 有权
标题翻译： III-V复合晶体和半导体电子电路元件
公开(公告)号：US08134223B2
公开(公告)日：2012-03-13
申请号：US12617733
申请日：2009-11-13
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
摘要翻译：即使在使用各种基板的情况下，也可以低成本地容易地获得优质的III-V晶体，而不会引起裂纹，并且可以用于以高质量和高产率制造半导体器件。 III-V晶体的特征在于以下特性：III-V族化合物晶体的载流子浓度，电阻率和位错密度均匀，沿着表面的±30％变化范围内; III-V复合晶体从c面取向偏离，使得晶体表面不包括其与c面的离轴角为0°的任何区域; 并且在III-V族化合物的晶体中心的XRD中的半峰全宽不大于150arcsec。

20. 发明授权

US07473315B2 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate 有权
标题翻译： Al x In y Ga 1-x-y N混合晶体基板，生长Al x In y Ga 1-x-y N混合晶体基板的方法和制造Al x In y Ga 1-x-y N混合晶体基板的方法
公开(公告)号：US07473315B2
公开(公告)日：2009-01-06
申请号：US11067928
申请日：2005-03-01
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Koji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B25/04
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an AlxInyGa1-x-yN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度Al x In y Ga 1-x-y N单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长Al x In y Ga 1-x-y N晶体，形成平行面的重复保留小平面山谷和小平面谷，产生伴随谷的大量缺陷积聚区（H），产生小面后的低位错单晶区（Z），使C平面生长区（ Y）在平面之后，通过生长小面的作用将小平面上的小平面上的位错收集到谷中，减少低位错单晶区域（Z）和C平面生长区域（Y）中的位错，并累积大量缺陷积聚区域（H）的芯（S）或界面（K）中的位错。

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